SPI8N8S7 SPP8N8S7,SPB8N8S7 OptiMOS =PowerTransistor Feature NChannel Enhancement mode 75 C operating temperature valanche rated Product Summary V DS 75 V R DS(on) max. SMD version 7. m I D 8 P TO6 3 P TO63 3 P TO 3 dv/dt rated Type Package Ordering Code SPP8N8S7 P TO 3 Q67S63 SPB8N8S7 P TO63 3 Q67S6 SPI8N8S7 P TO6 3 Q676S68 Marking N87 N87 N87 Maximum Ratings, at T j = 5 C, unless otherwise specified Parameter Symbol Value Unit Continuous drain current ) T C =5 C I D 8 8 Pulsed drain current I D puls 3 T C =5 C valanche energy, single pulse E S 8 mj I D =8, V DD =5V, R GS =5 Repetitive avalanche energy, limited by T ) jmax E R 3 Reverse diode dv/dt dv/dt 6 kv/µs I S =8, V DS =6V, di/dt=/µs, T jmax =75 C Gate source voltage V GS ± V Power dissipation P tot 3 W T C =5 C Operating and storage temperature T j, T stg 55... +75 C IEC climatic category; DIN IEC 68 55/75/56 Page 359
SPI8N8S7 SPP8N8S7,SPB8N8S7 Thermal Characteristics Parameter Symbol Values Unit min. typ. max. Characteristics Thermal resistance, junction case R thjc.3.5 K/W Thermal resistance, junction ambient, leaded R thj 6 SMD version, device on PCB: R thj @ min. footprint @ 6 cm cooling area 3) 6 Electrical Characteristics, at T j = 5 C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Static Characteristics Drainsource breakdown voltage V (BR)DSS 75 V V GS =V, I D =m Gate threshold voltage, V GS = V DS I D =5µ Zero gate voltage drain current V DS =75V, V GS =V, T j =5 C V DS =75V, V GS =V, T j =5 C ) Gatesource leakage current V GS =V, V DS =V Drainsource onstate resistance ) V GS =V, I D =66 V GS =, I D =66, SMD version V GS(th). 3 I DSS. µ I GSS n R DS(on) 5.7 5. 7. 7. m Current limited by bondwire ; with an RthJC =.5K/W the chip is able to carry I D = 3 at 5 C, for detailed information see app.note NPS7E available at www.infineon.com/optimos Defined by design. Not subject to production test. 3 Device on mm*mm*.5mm epoxy PCB FR with 6cm² (one layer, 7 µm thick) copper area for drain connection. PCB is vertical without blown air. Diagrams are related to straight lead versions Page 359
SPI8N8S7 SPP8N8S7,SPB8N8S7 Electrical Characteristics Parameter Symbol Conditions Values Unit min. typ. max. Dynamic Characteristics Transconductance g fs V DS *I D *R DS(on)max, 5 S I D =8 Input capacitance C iss V GS =V, V DS =5V, 6 63 pf Output capacitance C oss f=mhz 33 Reverse transfer capacitance C rss 6 6 Turnon delay time t d(on) V DD =V, V GS =V, 7 6 ns Rise time t r I D =8, 3 5 R G =. Turnoff delay time t d(off) 56 85 Fall time t f 33 5 Gate Charge Characteristics Gate to source charge Q gs V DD =6V, I D =8 8 37 nc Gate to drain charge Q gd 77 6 Gate charge total Q g V DD =6V, I D =8, 38 8 V GS = to V Gate plateau voltage V (plateau) V DD =6V, I D =8 5.5 V Reverse Diode Inverse diode continuous forward current I S T C =5 C 8 Inv. diode direct current, pulsed I SM 3 Inverse diode forward voltage V SD V GS =V, I F =8.9.3 V Reverse recovery time t rr V R =V, I F =l S, ns Reverse recovery charge Q rr di F /dt=/µs 7 59 nc Page 3 359
SPI8N8S7 SPP8N8S7,SPB8N8S7 Power dissipation P tot = f (T C ) parameter: V GS 6 V 3 SPP8N8S7 W Drain current I D = f (T C ) parameter: V GS V 9 SPP8N8S7 7 Ptot ID 6 5 6 3 8 6 8 6 C 9 6 8 6 C 9 T C T C 3 Safe operating area I D = f ( V DS ) parameter : D =, T C = 5 C ID 3 SPP8N8S7 R DS(on) = V DS / I D t p = 3.7µs µs µs Max. transient thermal impedance Z thjc = f (t p ) parameter : D = t p /T ZthJC K/W SPP8N8S7 D =.5 ms...5 3. single pulse. V V DS Page 7 6 5 3 s t p 359
SPI8N8S7 SPP8N8S7,SPB8N8S7 5 Typ. output characteristic I D = f (V DS ); T j =5 C parameter: t p = 8 µs 9 SPP8N8S7 P tot = 3W 6 Typ. drainsource on resistance R DS(on) = f (I D ) parameter: V GS 6 SPP8N8S7 m 6 j i V GS [V] a.5 d e f g h ID 8 6 b 5. h c 5.3 d 5.5 g e 5.8 f 6. g 6.3 f h 6.5 i 6.8 j. e RDS(on) 8 6 8 i d c b a.5.5.5 3 3.5 V 5 V DS 7 Typ. transfer characteristics I D = f ( V GS ); V DS x I D x R DS(on)max parameter: t p = 8 µs 6 6 V GS [V] = d 5.5 e 5.8 f 6. g 6.3 h 6.5 i 6.8 j. 6 8 6 I D 8 Typ. forward transconductance g fs = f(i D ); T j =5 C parameter: g fs S j 9 ID gfs 8 7 8 6 6 5 3 3 5 V GS 7 V 6 8 I D Page 5 359
SPI8N8S7 SPP8N8S7,SPB8N8S7 9 Drainsource onstate resistance R DS(on) = f (T j ) parameter : I D = 66, V GS = V m 3 SPP8N8S7 Typ. gate threshold voltage V GS(th) = f (T j ) parameter: V GS = V DS V RDS(on) 8 VGS(th) 3.5 5 µ.5 m 6 98%.5 8 6 typ.5 6 6 C 6 6 C 8 T j T j Typ. capacitances C = f (V DS ) parameter: V GS =V, f= MHz 5 Forward character. of reverse diode I F = f (V SD ) parameter: T j, tp = 8 µs 3 SPP8N8S7 pf C C iss IF C oss 3 C rss T j = 5 C typ T j = 75 C typ T j = 5 C (98%) T j = 75 C (98%) 5 5 V 3 V DS Page 6..8..6. V 3 V SD 359
SPI8N8S7 SPP8N8S7,SPB8N8S7 3 Typ. avalanche energy E S = f (T j ) par.: I D = 8, V DD = 5 V, R GS = 5 85 mj Typ. gate charge V GS = f (Q Gate) parameter: I D = 8 pulsed 6 SPP8N8S7 V 7 ES 6 5 VGS, V DS max,8 V DS max 8 3 6 5 5 65 85 5 5 5 C 85 T j 6 8 6 nc 9 Q Gate 5 Drainsource breakdown voltage V (BR)DSS = f (T j ) parameter: I D = m 9 SPP8N8S7 V 88 V(BR)DSS 86 8 8 8 78 76 7 7 7 68 6 6 C T j Page 7 359
SPI8N8S7 SPP8N8S7,SPB8N8S7 Published by Infineon Technologies G, Bereichs Kommunikation St.MartinStrasse 53, D85 München Infineon Technologies G 999 ll Rights Reserved. ttention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of noninfringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in lifesupport devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that lifesupport device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Further information Please notice that the part number is BSPP8N8S7 and BSPB8N8S7, for simplicity the device is referred to by the term SPP8N8S7 and SPB8N8S7 throughout this documentation. Page 8 359