MUR1620CT MURB1620CT MURB1620CT-1

Similar documents
MURD620CT. Ultrafast Rectifier. t rr = 25ns I F(AV) = 6Amp V R = 200V. Bulletin PD rev. C 12/03. Features. Package Outline

60EPU04 60APU04. Ultrafast Soft Recovery Diode. t rr = 50ns (typ) I F(AV) = 60Amp V R = 400V. Bulletin PD rev. D 07/01

60EPU04PbF 60APU04PbF

8ETU04 8ETU04S 8ETU04-1

MUR3020WT. Ultrafast Rectifier. t rr = 35ns I F(AV) = 30Amp V R = 200V. Bulletin PD rev. C 05/01. Features. Package Outline

30ETH06 30ETH06S 30ETH06-1

15ETL06PbF 15ETL06FPPbF

150EBU04. Ultrafast Soft Recovery Diode. t rr = 60ns I F(AV) = 150Amp V R = 400V. Bulletin PD rev. B 02/06

60EPU02PbF 60APU02PbF

Hyperfast Rectifier, 8 A FRED Pt

HFB20HJ20C. Ultrafast, Soft Recovery Diode. Features. Description. Absolute Maximum Ratings. 1 PD A V R = 200V I F(AV) = 20A

HFB16HY20CC. Ultrafast, Soft Recovery Diode FRED. 1 PD B V R = 200V I F(AV) = 16A. t rr = 30ns CASE STYLE TO-257AA

Ultrafast Rectifier, 2 x 15 A FRED Pt

FEATURES. Heatsink. 1 2 Pin 1 Pin 2

Hyperfast Rectifier, 1 A FRED Pt

Ultrafast, Soft Recovery Diode BASE CATHODE CATHODE

Ultrafast, Soft Recovery Diode. Base Cathode Anode N/C

Ultrafast Rectifier, 8 A FRED Pt

Single Phase Fast Recovery Bridge (Power Modules), 61 A

Hyperfast Rectifier, 2 x 15 A FRED Pt

TO-220AC. 1

Ultrafast Rectifier, 16 A FRED Pt

Hyperfast Rectifier, 8 A FRED Pt

FEATURES DESCRIPTION APPLICATIONS

Hyperfast Rectifier, 30 A FRED Pt

VS-HFA08SD60SPbF. HEXFRED Ultrafast Soft Recovery Diode, 8 A. Vishay Semiconductors. FEATURES BENEFITS PRODUCT SUMMARY

Ultrafast Rectifier, 8 A FRED Pt

Hyperfast Rectifier, 2 x 15 A FRED Pt

Small Signal Fast Switching Diode FEATURES

Ultrafast Rectifier, 8 A FRED Pt

Ultrafast, Soft Recovery Diode BASE CATHODE CATHODE

Small Signal Fast Switching Diode

HFA35HB120C PD-20371E. Ultrafast, Soft Recovery Diode FRED. 1 V R = 1200V I F(AV) = 15A. Q rr = 370ns CASE STYLE TO-254AA

Ultrafast Rectifier, 2 x 8 A FRED Pt

Small Signal Fast Switching Diode

Hyperfast Rectifier, 30 A FRED Pt

IRGP20B60PDPbF SMPS IGBT. n-channel WARP2 SERIES IGBT WITH ULTRAFAST SOFT RECOVERY DIODE

Ultrafast, Soft Recovery Diode BASE CATHODE 3 CATHODE

High-Voltage Schottky Rectifier

Ultrafast Rectifier, 2 x 15 A FRED Pt

Ultrafast Rectifier, 2 x 30 A FRED Pt

Small Signal Fast Switching Diode

50MT060ULS V CES = 600V I C = 100A, T C = 25 C. I27123 rev. C 02/03. Features. Benefits. Absolute Maximum Ratings Parameters Max Units.

High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier

200mA, 30V Schottky Barrier Diode

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

IRGP50B60PDPbF. n-channel SMPS IGBT WARP2 SERIES IGBT WITH ULTRAFAST SOFT RECOVERY DIODE

SMPS IGBT. n-channel. Thermal Resistance Parameter Min. Typ. Max. Units

Small Signal Fast Switching Diode FEATURES PART ORDERING CODE INTERNAL CONSTRUCTION TYPE MARKING REMARKS

350mW, SMD Switching Diode

VS-5EWL06FN-M3. Ultralow V F Ultrafast Rectifier, 5 A FRED Pt. Vishay Semiconductors. FEATURES DESCRIPTION / APPLICATIONS

LL4148 / LL4448. Small Signal Fast Switching Diodes. Vishay Semiconductors

Half Bridge IGBT MTP (Ultrafast NPT IGBT), 80 A

High Current Density Surface-Mount Trench MOS Barrier Schottky Rectifier

V30100S-E3, VF30100S-E3, VB30100S-E3, VI30100S-E3 High Voltage Trench MOS Barrier Schottky Rectifier

250 P C = 25 C Power Dissipation 160 P C = 100 C Power Dissipation Linear Derating Factor

Ultrafast Rectifier, 8 A FRED Pt

V20100S-E3, VF20100S-E3, VB20100S-E3, VI20100S-E3 High Voltage Trench MOS Barrier Schottky Rectifier

High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier Ultra Low V F = 0.43 V at I F = 5 A

Ultrafast Soft Recovery Diode, 60 A FRED Pt

Dual Low-Voltage Trench MOS Barrier Schottky Rectifier

Ultrafast Rectifier, 30 A FRED Pt

BYW52 / 53 / 54 / 55 / 56

IRGIB15B60KD1P INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE. n-channel. Absolute Maximum Ratings

IGBT PIM Module, 15 A

High Voltage Trench MOS Barrier Schottky Rectifier

20MT120UF "FULL-BRIDGE" IGBT MTP. UltraFast NPT IGBT V CES = 1200V I C = 40A T C = 25 C. 5/ I27124 rev. D 02/03. Features.

BAV17/18/19/20/21. Small Signal Switching Diodes, High Voltage. Vishay Semiconductors

High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low V F = 0.50 V at I F = 5 A

STTH16R04CT. Ultrafast recovery diode. Main product characteristics. Features and benefits. Description. Order codes TO-220AB TO-220FPAB

Parameter Max. Units V CES Collector-to-Emitter Breakdown Voltage 600 I T C = 25 C Continuous Collector Current

Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low V F = V at I F = 5 A

IRGR3B60KD2PbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE. n-channel. Absolute Maximum Ratings Parameter Max.

STTH60R04. Ultrafast recovery diode. Main product characteristics. Features and benefits. Description. Order codes

Low VF SMD Schottky Barrier Diode

Part Ordering code Type Marking Remarks 1N4148 1N4148-TAP or 1N4148-TR V4148 Ammopack/tape and reel

Hyper Fast Rectifier, 8 A FRED Pt

Surface Mount ESD Capability Rectifiers

Complementary (N- and P-Channel) MOSFET

LL4148 / LL4448. Small Signal Fast Switching Diodes. Vishay Semiconductors

Part Ordering code Marking Remarks 1N4148W-V 1N4148W-V-GS18 or 1N4148W-V-GS08 A2 Tape and Reel

Part Type differentiation Package 1N5550 V RRM = 200 V G-4 1N5551 V RRM = 400 V G-4 1N5552 V RRM = 600 V G-4

STTH61R04TV. Ultrafast recovery diode. Main product characteristics. Features and benefits. Order codes. Description A1 K2 ISOTOP ISOTOP STTH61R04TV1

IRGPS40B120UP INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT

STTH6110TV. Ultrafast recovery - high voltage diode. Main product characteristics. Features and benefits. Order codes. Description ISOTOP ISOTOP

DO-15 DO-201AD STTH3R04Q STTH3R04

IRGB4056DPbF. n-channel Lead Free Package INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

Part Ordering code Type Marking Remarks BAT46 BAT46-TR or BAT46-TAP BAT46 Tape and Reel/Ammopack

IRGS4062DPbF IRGSL4062DPbF

BAT54T/AD/CD/SD/BR Taiwan Semiconductor Small Signal Product 200mW Surface Mount Schottky Barrier Diode

SPECIFICATIONS (T J = 25 C, unless otherwise noted)

IRGP30B60KD-EP V CES = 600V I C = 30A, T C =100 C. t sc > 10µs, T J =150 C. V CE(on) typ. = 1.95V. Absolute Maximum Ratings. Thermal Resistance

IRGB30B60K IRGS30B60K IRGSL30B60K

Automotive N- and P-Channel 40 V (D-S) 175 C MOSFET

BAT54 / A / C / S Taiwan Semiconductor

Parameter Test condition Symbol Value Unit Power dissipation P tot 300 1) mw

PINNING - TO220AB PIN CONFIGURATION SYMBOL. tab

Absolute Maximum Ratings Parameter Max. Units

BAV100/101/102/103. Small Signal Switching Diodes, High Voltage. Vishay Semiconductors

Transcription:

Ultrafast Rectifier Features Ultrafast Recovery Time Low Forward Voltage Drop Low Leakage Current 75 C Operating Junction Temperature MUR60CT MURB60CT MURB60CT- t rr = 5ns I F(AV) = 6Amp V R = 00V Description/ Applications International Rectifier's MUR.. series are the state of the art Ultra fast recovery rectifiers specifically designed with optimized performance of forward voltage drop and ultra fast recovery time. The planar structure and the platinum doped life time control, guarantee the best overall performance, ruggedness and reliability characteristics. These devices are intended for use in the output rectification stage of SMPS, UPS, DC-DC converters as well as freewheeling diode in low voltage inverters and chopper motor drives. Their extremely optimized stored charge and low recovery current minimize the switching losses and reduce over dissipation in the switching element and snubbers. Absolute Maximum Ratings Parameters Max Units V RRM Peak Repetitive Peak Reverse Voltage 00 V I F(AV) Average Rectified Forward Current Per Leg 8.0 A Total Device, (Rated V R ), T C = 50 C Total Device 6 I FSM Non Repetitive Peak Surge Current Per Leg 0 I FM Peak Repetitive Forward Current Per Leg 6 (Rated V R, Square wave, 0 KHz), T C = 50 C T J, T STG Operating Junction and Storage Temperatures -65 to 75 C Case Styles MUR60CT MURB60CT MURB60CT- TO-0AB D PAK TO-6

MUR60CT, MURB60CT, MURB60CT- Electrical Characteristics @ T J = 5 C (unless otherwise specified) Parameters Min Typ Max Units Test Conditions V BR, V r Breakdown Voltage, 00 - - V I R = 0µA Blocking Voltage V F Forward Voltage - - 0.975 V I F = 8A - - 0.895 V I F = 8A, T J = 50 C I R Reverse Leakage Current - - 5 µa V R = V R Rated - - 50 µa T J = 50 C, V R = V R Rated C T Junction Capacitance - 5 - pf V R = 00V L S Series Inductance - 8.0 - nh Measured lead to lead 5mm from package body Dynamic Recovery Characteristics @ T J = 5 C (unless otherwise specified) Parameters Min Typ Max Units Test Conditions t rr Reverse Recovery Time - - 35 ns I F =.0A, di F/dt = 50A/µs, V R = 30V - - 5 I F = 0.5A, I R =.0A, I REC = 0.5A - 0 - T J = 5 C 34 T J = 5 C I RRM Peak Recovery Current -.7 - A T J = 5 C I F = 8A V R = 60V di F /dt = 00A/µs - 4. - T J = 5 C Q rr Reverse Recovery Charge - 3 - nc T J = 5 C - 75 - T J = 5 C Thermal - Mechanical Characteristics Parameters Min Typ Max Units T J Max. Junction Temperature Range - - - 65 to 75 C T Stg Max. Storage Temperature Range - - - 65 to 75 R thjc Thermal Resistance, Junction to Case Per Leg - - 3.0 C/W R thja Thermal Resistance, Junction to Ambient Per Leg - - 50 R thcs Thermal Resistance, Case to Heatsink - 0.5 - Wt Weight -.0 - g - 0.07 - (oz) Mounting Torque 6.0 - Kg-cm 5.0 - lbf.in Mounting Surface, Flat, Smooth and Greased

MUR60CT, MURB60CT, MURB60CT- 0 0 Reverse Current - I R (µa) 0. 0.0 T J = 75 C 50 C 5 C 0 C 5 C Instantaneous Forward Current - I F (A) T = 75 C J T J = 50 C T J = 5 C Junction Capacitance - C T (pf) 0.00 0 50 0 50 00 50 Reverse Voltage - V R (V) Fig. - Typical Values Of Reverse Current Vs. Reverse Voltage 00 0 T = 5 C J 0. 0 0. 0.4 0.6 0.8..4.6.8 Forward Voltage Drop - V FM (V) Fig. - Typical Forward Voltage Drop Characteristics 0 00 Reverse Voltage - V R (V) Fig. 3 - Typical Junction Capacitance Vs. Reverse Voltage Thermal Impedance Z thjc ( C/W) D = 0.50 D = 0.0 D = 0. D = 0.05 P DM D = 0.0 D = 0.0 t 0. t Notes: Single Pulse. Duty factor D = t/t (Thermal Resistance). Peak Tj = Pdm x ZthJC + Tc 0.0 0.0000 0.000 0.00 0.0 0. t, Rectangular Pulse Duration (Seconds) Fig. 4 - Max. Thermal Impedance Z thjc Characteristics 3

MUR60CT, MURB60CT, MURB60CT- 80 Allowable Case Temperature ( C) 70 60 50 40 Square wave (D = 0.50) Rated Vr applied DC see note () 30 0 3 6 9 Average Forward Current - IF (AV) (A) Average Power Loss ( Watts ) 8 6 4 RMS Limit DC D = 0.0 D = 0.0 D = 0.05 D = 0. D = 0.0 D = 0.50 0 0 3 6 9 Average Forward Current - IF (AV) (A) Fig. 5 - Max. Allowable Case Temperature Vs. Average Forward Current Fig. 6 - Forward Power Loss Characteristics 60 00 trr ( ns ) 50 40 30 IF = 30 A IF = 5 A IF = 8 A Qrr ( nc ) 60 80 IF = 30 A IF = 5 A IF = 8 A V R = 60V T J = 5 C T J = 5 C 0 40 V R = 60V T J = 5 C T J = 5 C 0 00 di F /dt (A/µs ) Fig. 7 - Typical Reverse Recovery vs. di F /dt 0 0 00 di F /dt (A/µs ) Fig. 8 - Typical Stored Charge vs. di F /dt () Formula used: T C = T J - (Pd + Pd REV ) x R thjc ; Pd = Forward Power Loss = I F(AV) x V FM @ (I F(AV) / D) (see Fig. 6); Pd REV = Inverse Power Loss = V R x I R ( - D); I R @ V R = rated V R 4

MUR60CT, MURB60CT, MURB60CT- Reverse Recovery Circuit V R = 00V 0.0 Ω dif/dt F /dt ADJUST L = 70µH G D IRFP50 D.U.T. S Fig. 9- Reverse Recovery Parameter Test Circuit 3 0 I F t a trr t b I RRM Q rr 4 0.5 I RRM di(rec)m/dt 5 0.75 I RRM di f F /dt. di F /dt - Rate of change of current through zero crossing. I RRM - Peak reverse recovery current 3. t rr - Reverse recovery time measured from zero crossing point of negative going I F to point where a line passing through 0.75 I RRM and 0.50 I RRM extrapolated to zero current 4. Q rr - Area under curve defined by t rr and I RRM Q rr = t rr x I RRM 5. di (rec) M / dt - Peak rate of change of current during t b portion of t rr Fig. - Reverse Recovery Waveform and Definitions 5

MUR60CT, MURB60CT, MURB60CT- Outline Table 5.4 (0.60) 4.84 (0.58).54 (0.4) MAX. 3 3.78 (0.5) DIA. 3.54 (0.4).9 (0.).54 (0.) TERM 6.48 (0.5) 6.3 (0.4).3 (0.05). (0.05) BASE COMMON CATHODE 3 ANODE COMMON ANODE CATHODE 4.09 (0.55) 3.47 (0.53) 3.96 (0.6) 3.55 (0.4) 0. (0.004).40 (0.05).5 (0.04).04 (0.080) MAX. 0.94 (0.04) 0.69 (0.03).89 (0.).64 (0.) 4.57 (0.8) 4.3 (0.7) 3 0.6 (0.0) MAX. 5.08 (0.0) REF. Conforms to JEDEC Outline TO-0AB Dimensions in millimeters and (inches) Modified JEDEC outline TO-6 Dimensions in millimeters and (inches) 6

MUR60CT, MURB60CT, MURB60CT- Outline Table 5.49 (0.6) 4.73 (0.58) 93.40 (0.055) 3X.4 (0.045).6 (0.40) REF..6 (0.).3 (0.09) 8.89 (0.35) REF. 0.93 (0.37) X 0.69 (0.7) 6.47 (0.5) 6.8 (0.4) 4.69 (0.8) 4.0 (0.6).3 (0.05). (0.05) 5.8 (0.) 4.78 (0.9) 0.55 (0.0) 0.46 (0.0) MINIMUM RECOMMENDED FOOTPRINT.43 (0.45) BASE COMMON CATHODE 3 ANODE COMMON ANODE CATHODE 3 4.57 (0.8) 4.3 (0.7) 0.6 (0.0) MAX. 8.89 (0.35) 7.78 (0.70) 5.08 (0.0) REF. 3.8 (0.5) Conforms to JEDEC Outline D PAK Dimensions in millimeters and (inches).08 (0.08) X.54 (0.) X Ordering Information Table Device Code MUR B 6 0 CT - 3 4 5 6 - - Ultrafast B = DMUR Series Pak 3-4- 5- / CT Current Voltage TO-6 = Center Rating Tap (6 (0(Dual) = 00V) 6A) TO-0 /D None = TO-0AB PAK/ 6- "-" TO-6 = TO-6 Option 7

MUR60CT, MURB60CT, MURB60CT- Data and specifications subject to change without notice. This product has been designed and qualified for Industrial Level. Qualification Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 33 Kansas St., El Segundo, California 9045, USA Tel: (3) 5-75 TAC Fax: (3) 5-7309 /03 8

Legal Disclaimer Notice Vishay Notice The products described herein were acquired by Vishay Intertechnology, Inc., as part of its acquisition of International Rectifier s Power Control Systems (PCS) business, which closed in April 007. Specifications of the products displayed herein are pending review by Vishay and are subject to the terms and conditions shown below. Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale. International Rectifier, IR, the IR logo, HEXFET, HEXSense, HEXDIP, DOL, INTERO, and POWIRTRAIN are registered trademarks of International Rectifier Corporation in the U.S. and other countries. All other product names noted herein may be trademarks of their respective owners. Document Number: 9990 Revision: -Mar-07