Features 650V @T J = 150 C Typ. Rds(on)=0.53Ω Ultra low gate charge (typ. Qg=25nC) Low effective output capacitance (typ. Coss.eff=60pF) 100% avalanche tested RoHS Compliant Description December 2008 SuperFET TM SuperFET TM is, Fairchild s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. Consequently, SuperFET is very suitable for various AC/DC power conversion in switching mode operation for system miniaturization and higher efficiency. D G D S TO-220 FCP Series G D S TO-220F FCPF Series G S Absolute Maximum Ratings Symbol Parameter FCP7N60 FCPF7N60 Unit S Drain-Source Voltage 600 V Drain Current - Continuous (T C = 25 C) - Continuous (T C = 100 C) M Drain Current - Pulsed (Note 1) 21 21* A S Gate-Source voltage ± 30 V E AS Single Pulsed Avalanche Energy (Note 2) 230 mj I AR Avalanche Current (Note 1) 7 A E AR Repetitive Avalanche Energy (Note 1) 8.3 mj dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns P D Power Dissipation (T C = 25 C) - Derate above 25 C T J, T STG Operating and Storage Temperature Range -55 to +150 C T L Maximum Lead Temperature for Soldering Purpose, 300 C 1/8 from Case for 5 Seconds *Drain current limited by maximum junction temperature Thermal Characteristics 7 4.4 83 0.67 7* 4.4* 31 0.25 A A W W/ C Symbol Parameter FCP7N60 FCPF7N60 Unit R θjc Thermal Resistance, Junction-to-Case 1.5 4.0 C/W R θja Thermal Resistance, Junction-to-Ambient 62.5 62.5 C/W 2008 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com
Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FCP7N60 FCP7N60 TO-220 - - 50 FCPF7N60 FCPF7N60 TO-220F - - 50 FCPF7N60 FCPF7N60YDTU TO-220F (Forming) - - 50 Electrical Characteristics T C = 25 C unless otherwise noted Symbol Parameter Conditions Min Typ Max Units Off Characteristics BS Drain-Source Breakdown Voltage = 0V, = 250μA, T J = 25 C 600 -- -- V = 0V, = 250μA, T J = 150 C -- 650 -- V ΔBS Breakdown Voltage Temperature / ΔT J Coefficient = 250μA, Referenced to 25 C -- 0.6 -- V/ C B Drain-Source Avalanche Breakdown Voltage = 0V, = 7A -- 700 -- V SS Zero Gate Voltage Drain Current = 600V, = 0V = 480V, T C = 125 C I GSSF Gate-Body Leakage Current, Forward = 30V, = 0V -- -- 100 na I GSSR Gate-Body Leakage Current, Reverse = -30V, = 0V -- -- -100 na On Characteristics (th) Gate Threshold Voltage =, = 250μA 3.0 -- 5.0 V R DS(on) Static Drain-Source On-Resistance = 10V, = 3.5A -- 0.53 0.6 Ω g FS Forward Transconductance = 40V, = 3.5A -- 6 -- S Dynamic Characteristics C iss Input Capacitance = 25V, = 0V, -- 710 920 pf C oss Output Capacitance f = 1.0MHz -- 380 500 pf C rss Reverse Transfer Capacitance -- 34 -- pf C oss Output Capacitance = 480V, = 0V, f = 1.0MHz -- 22 29 pf C oss eff. Effective Output Capacitance = 0V to 400V, = 0V -- 60 -- pf Switching Characteristics t d(on) Turn-On Delay Time V DD = 300V, = 7A -- 35 80 ns t r Turn-On Rise Time R G = 25Ω -- 55 120 ns t d(off) Turn-Off Delay Time -- 75 160 ns t f Turn-Off Fall Time (Note 4) -- 32 75 ns Q g Total Gate Charge = 480V, = 7A -- 23 30 nc Q gs Gate-Source Charge = 10V -- 4.2 5.5 nc Q gd Gate-Drain Charge (Note 4) -- 11.5 -- nc Drain-Source Diode Characteristics and Maximum Ratings I S Maximum Continuous Drain-Source Diode Forward Current -- -- 7 A I SM Maximum Pulsed Drain-Source Diode Forward Current -- -- 21 A V SD Drain-Source Diode Forward Voltage = 0V, I S = 7A -- -- 1.4 V t rr Reverse Recovery Time = 0V, I S = 7A -- 360 -- ns Q rr Reverse Recovery Charge di F /dt =100A/μs -- 4.5 -- μc -- -- -- -- 1 10 μa μa NOTES: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. I AS = 3.5A, V DD = 50V, R G = 25Ω, Starting T J = 25 C 3. I SD 7A, di/dt 200A/μs, V DD BS, Starting T J = 25 C 4. Essentially Independent of Operating Temperature Typical Characteristics 2 www.fairchildsemi.com
Typical Performance Characteristics Figure 1. On-Region Characteristics 10 1 Top : 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V Bottom : 5.5 V 10 1, Drain-Source Voltage [V] 1. 250μ s Pulse Test 2. T C = 25 10 1 Figure 2. Transfer Characteristics 25 150-55 Note 1. = 40V 2. 250μ s Pulse Test 2 4 6 8 10, Gate-Source Voltage [V] Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperatue 2.0 R DS(ON) [Ω ], Drain-Source On-Resistance 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 = 10V = 20V Note : T = 25 J R, Reverse Drain Current [A] 10 1 150 25 1. = 0V 2. 250μ s Pulse Test 0.0 0 5 10 15 20 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 V SD, Source-Drain Voltage [V] Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics Capacitance [pf] 3000 2000 1000 C rss C iss C oss 0 10 1, Drain-Source Voltage [V] C iss = C gs + C gd (C ds = shorted) C oss = C ds + C gd C rss = C gd 1. = 0 V 2. f = 1 MHz, Gate-Source Voltage [V] 12 10 8 6 4 2 = 100V = 250V = 400V 0 0 5 10 15 20 25 Q G, Total Gate Charge [nc] Note : I = 7A D 3 www.fairchildsemi.com
Typical Performance Characteristics (Continued) BS, (Normalized) Drain-Source Breakdown Voltage Figure 7. Breakdown Voltage Variation Figure 8. On-Resistance Variation vs. Temperature vs. Temperature 1.2 1.1 1.0 0.9 1. = 0 V 2. = 250 μ A 0.8-100 -50 0 50 100 150 200 T J, Junction Temperature [ o C] R DS(ON), (Normalized) Drain-Source On-Resistance 3.0 2.5 2.0 1.5 1.0 0.5 1. = 10 V 2. = 3.5 A 0.0-100 -50 0 50 100 150 200 T J, Junction Temperature [ o C] Figure 9-1. Maximum Safe Operating Area for FCP7N60 Figure 9-2. Maximum Safe Operating Area for FCPF7N60 10 2 Operation in This Area is Limited by R DS(on) 10 2 Operation in This Area is Limited by R DS(on) 10 1 1. T C = 25 o C 2. T J = 150 o C 3. Single Pulse 100 us 1 ms 10 ms DC 10 1 1. T C = 25 o C 2. T J = 150 o C 3. Single Pulse 100 us 1 ms 10 ms 100 ms DC 10-2 10 1 10 2 10 3, Drain-Source Voltage [V] 10-2 10 1 10 2 10 3, Drain-Source Voltage [V] Figure 10. Maximum Drain Current vs. Case Temperature 10.0 7.5 5.0 2.5 0.0 25 50 75 100 125 150 T C, Case Temperature [ ] 4 www.fairchildsemi.com
Typical Performance Characteristics (Continued) Figure 11-1. Transient Thermal Response Curve for FCP7N60 Z θ JC (t), Thermal Response 10-2 D=0.5 0.2 0.1 0.05 0.02 0.01 single pulse 1. Z θ JC (t) = 1.5 /W Max. 2. Duty Factor, D=t 1 /t 2 3. T JM - T C = P DM * Z θ JC (t) 10-5 10-4 10-3 10-2 10 1 P DM t 1, Square W ave Pulse Duration [sec] t 1 t 2 Figure 11-2. Transient Thermal Response Curve for FCPF7N60 D=0.5 Z θ JC (t), Thermal Response 0.2 0.1 0.05 0.02 0.01 single pulse 1. Z θ JC (t) 4.0 /W Max. 2. Duty Factor, D=t 1 /t 2 3. T JM - T C = P DM * Z θ JC (t) P DM t 1 10-2 t 2 10-5 10-4 10-3 10-2 10 1 t 1, Square W ave Pulse Duration [sec] 5 www.fairchildsemi.com
12V 200nF 3mA 50KΩ 300nF Gate Charge Test Circuit & Waveform Same Type as DUT DUT 10V Q gs Q g Q gd Charge Resistive Switching Test Circuit & Waveforms R L 90% R G V DD 10V DUT 10% t d(on) t r t d(off) tf t on t off Unclamped Inductive Switching Test Circuit & Waveforms L BS E AS = ---- 1 LI 2 AS -------------------- 2 BS -V DD BS I AS R G V DD (t) 10V DUT V DD (t) t p t p Time 6 www.fairchildsemi.com
Peak Diode Recovery dv/dt Test Circuit & Waveforms D U T + I S D V D S _ L D r i v e r R G S a m e T y p e a s D U T V D D V G S d v / d t c o n t r o l l e d b y R G I S D c o n t r o l l e d b y p u l s e p e r i o d V G S ( D r iv e r ) G a t e P u l s e W i d t h D = -------------------------- G a t e P u l s e P e r i o d 1 0 V I S D ( D U T ) I F M, B o d y D i o d e F o r w a r d C u r r e n t d i / d t V D S ( D U T ) I R M B o d y D i o d e R e v e r s e C u r r e n t B o d y D i o d e R e c o v e r y d v / d t V S D V D D B o d y D i o d e F o r w a r d V o l t a g e D r o p 7 www.fairchildsemi.com
Mechanical Dimensions TO - 220 Dimensions in Millimeters 8 www.fairchildsemi.com
Mechanical Dimensions (Continued) 15.80 ±0.20 3.30 ±0.10 TO-220F 10.16 ±0.20 ø3.18 ±0.10 2.54 ±0.20 (7.00) (0.70) 6.68 ±0.20 (1.00x45 ) 15.87 ±0.20 9.75 ±0.30 MAX1.47 0.80 ±0.10 (30 ) 0.35 ±0.10 #1 0.50 +0.10 0.05 2.76 ±0.20 2.54TYP [2.54 ±0.20] 2.54TYP [2.54 ±0.20] 9.40 ±0.20 4.70 ±0.20 Dimensions in Millimeters 9 www.fairchildsemi.com
Mechanical Dimensions (Continued) TO-220F (Y Forming) 10 www.fairchildsemi.com
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