SIPMOS SmallSignalTransistor Features PChannel Enhancement mode valanche rated Logic Level dv/dt rated Product Summary Drain source voltage V DS 6 V Drainsource onstate resistance R DS(on) 8 W Continuous drain current I D.15 3 Type Package Tape and Reel PGSOT33 L637:3pcs/r. Marking YBs 1 VSO5561 Pin 1 PIN PIN 3 G S D Maximum Ratings,at T j = 5 C, unless otherwise specified Parameter Symbol Value Unit Continuous drain current I D.15 T = 5 C Pulsed drain current I D puls.6 T = 5 C valanche energy, single pulse E S.61 mj I D =.15, V DD = 5 V, R GS = 5 W valanche energy, periodic limited by T jmax E R.3 Reverse diode dv/dt dv/dt 6 kv/µs I S =.15, V DS = 48 V, di/dt = /µs, T jmax = 15 C Gate source voltage V GS ± V Power dissipation P tot.3 W T = 5 C Operating and storage temperature T j, T stg 55...+15 C IEC climatic category; DIN IEC 681 55/15/56 Rev 1.3 Page 1
Thermal Characteristics Parameter Symbol Values Unit min. typ. max. Characteristics Thermal resistance, junction soldering point R thjs 1 K/W (Pin 3) SMD version, device on PCB: R thj @ min. footprint @ 6 cm cooling area 1) 4 35 Electrical Characteristics, at T j = 5 C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Static Characteristics Drainsource breakdown voltage V (BR)DSS 6 V V GS = V, I D = 5 µ Gate threshold voltage, V GS = V DS V GS(th) 1 1.5 I D = µ Zero gate voltage drain current I DSS µ V DS = 6 V, V GS = V, T j = 5 C V DS = 6 V, V GS = V, T j = 15 C.1 1 Gatesource leakage current I GSS n V GS = V, V DS = V Drainsource onstate resistance R DS(on).5 5 W V GS =.7 V, I D =.1 Drainsource onstate resistance R DS(on) 6.9 1 V GS = 4.5 V, I D =.1 Drainsource onstate resistance V GS = V, I D =.15 R DS(on) 4.6 8 1 Device on 4mm*4mm*1.5mm epoxy PCB FR4 with 6cm (one layer, 7 µm thick) copper area for drain connection. PCB is vertical without blown air. Rev 1.3 Page
Electrical Characteristics, at T j = 5 C, unless otherwise specified Parameter Symbol Conditions Values Unit min. typ. max. Dynamic Characteristics Transconductance g fs V DS *I D *R DS(on)max,.8.16 S I D =.15 Input capacitance C iss V GS =V, V DS =5V, 15.3 19.1 pf Output capacitance C oss f=1mhz 5.8 7.3 Reverse transfer capacitance C rss 3 3.8 Turnon delay time t d(on) V DD =3V, V GS =4.5V, 6.7 ns Rise time t r I D =.1, R G =5W 16. 4.3 Turnoff delay time t d(off) 8.6 1.9 Fall time t f.5 3.8 Gate Charge Characteristics Gate to source charge Q gs V DD =48V, I D =.15.5.38 nc Gate to drain charge Q gd.3.45 Gate charge total Q g V DD =48V, I D =.15, V GS = to V 1 1.5 Gate plateau voltage V(plateau) V DD =48V, I D =.15 3.4 V Reverse Diode Inverse diode continuous I S T =5 C.15 forward current Inverse diode direct current, I SM.6 pulsed Inverse diode forward voltage V SD V GS =V, I F =.15.84 1.1 V Reverse recovery time t rr V R =3V, I F =l S, 3.6 35.4 ns Reverse recovery charge Q rr di F /dt=/µs 11.6 17.4 nc Rev 1.3 Page 3
Power Dissipation P tot = f (T ).3 W Drain current I D = f (T ) parameter: V GS ³ V.16.4.1 Ptot. ID..16.8.1.6.8.4.4.. 4 6 8 1 C 16 T. 4 6 8 1 C 16 T Safe operating area I D = f ( V DS ) parameter : D =, T = 5 C 1 Transient thermal impedance Z thj = f (t p ) parameter : D = t p /T 3 K/W t p = 4.µs ID 1 R DS(on) = V DS / I D µs 1 ms ms ZthJC D =.5. 1..5. DC single pulse.1 3 1 1 V V DS Rev 1.3 Page 4 5 4 3 1 1 s 3 t p
Typ. output characteristic Typ. drainsourceonresistance I D = f (V DS ); T j =5 C R DS(on) = f (I D ) parameter: t p = 8 µs parameter: V GS.36 P tot = W g f e V GS [V] a.5 6 W a b c d ID.8.4. b 3. c 3.5 d d 4. e 4.5 f 5. g 6. RDS(on) 18 16 14.16 c 1.1 8.8.4 a b 6 4 V GS [V] = a.5 b 3. c 3.5 d 4. e 4.5 f 5. g 6. e f g...5 1. 1.5..5 3. 3.5 4. V 5. V DS Typ. transfer characteristics I D = f ( V GS ) V DS ³ x I D x R DS(on)max parameter: t p = 8 µs.3..4.8.1.16..4.3 I D Typ. forward transconductance g fs = f(i D ); T j =5 C parameter: g fs. S.18 ID..15..5...5 1. 1.5..5 3. 3.5 4. V 5. V GS gfs.16.14.1..8.6.4....5..15..5.3.4 I D Rev 1.3 Page 5
Drainsource onresistance R DS(on) = f(t j ) parameter: I D =.17, V GS = V 16 Gate threshold voltage V GS(th) = f (T j ) parameter: V GS = V DS, I D = µ.5 W V max. R DS(on) 1 max. VGS(th) 1.5 typ. 8 6 typ. 1. min. 4.5 6 6 C 16 Typ. capacitances C = f(vds) Parameter: V GS = V, f=1 MHz T j. 6 6 C 18 Forward characteristics of reverse diode I F = f (V SD ) parameter: T j, tp = 8 µs T j pf C iss 1 C IF 1 C oss C rss T j = 5 C typ T j = 15 C typ T j = 5 C (98%) T j = 15 C (98%) 5 15 V 3 V DS Rev 1.3 Page 6 3..4.8 1. 1.6..4 V 3. V SD
valanche energy E S = f (T j ) par.: I D =.15, V DD = 5 V, R GS = 5 W 3. mj Typ. gate charge V GS = f (Q Gate ) parameter: I D =.15 pulsed 16 V 1 ES. VGS, V DS max,8 V DS max 1.5 8 1. 6 4.5. 5 45 65 85 5 15 C 165 T j...4.6.8 1. 1. nc 1.5 Q Gate Drainsource breakdown voltage V (BR)DSS = f (T j ) 7 V V(BR)DSS 68 66 64 6 6 58 56 54 6 6 C 18 T j Rev 1.3 Page 7
Published by Infineon Technologies G, Bereichs Kommunikation St.MartinStrasse 53, D81541 München Infineon Technologies G 1999 ll Rights Reserved. ttention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of noninfringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in lifesupport devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that lifesupport device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev 1.3 Page 8