WPM34 WPM34 P-Channel Enhancement Mode Mosfet Http://www.sh-willsemi.com Features Higher Efficiency Extending Battery Life Miniature SOT3-3 Surface Mount Package Super high density cell design for extremely low RDS (ON) 3 Applications DC/DC Converter Load Switch Battery Powered System LCD Display inverter Power Management in Portable, Battery Powered Products SOT 3-3 pin connections : ABSOLUTE MAXIMUM RATINGS T A = 5 C, unless otherwise noted Steady Parameter Symbol 5 s Unit State Drain-Source Voltage V DS - V Gate-Source Voltage V GS ± 8 Continuous Drain Current T A (T J = 5 C) a T A =8 C Pulsed Drain Current I DM - A Continuous Source Current (Diode Conduction) a Maximum Power Dissipation a =5 C -4.3-3.5 I D I S T A =5 C.5.75 T A =8 C P D -3. -.5 -.7 -.7.4 Operating Junction and Storage T J, T stg - 55 to 5 C Temperature Range a. Surface Mounted on FR4 Board using in sq pad size,oz Cu. W G S P Channel 3 D Top View Marking: Drain 3 W4Z Gate Source W 4= Specific Device Code Z = Date Code Order information Part Number Package Shipping WPM34 3/TR SOT3-3 3 Tape & Reel Will Semiconductor Ltd. 5/8/5 Rev..9
WPM34 THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit Junction-to-Ambient Thermal Resistance b t 5 s 75 Steady State b. Surface Mounted on FR4 Board using in sq pad size, oz Cu. R JA 5 65 C/W MOSFET ELECTRICAL CHARACTERISTICS(T J =5 unless otherwise specified) Parameter Symbol Test Condition Min Typ Max Units Off Characteristics Drain-Source Breakdown Voltage BV DSS V GS = V,I D = -5 A - V Zero Gate Voltage Drain Current I DSS V DS =-6V,V GS = V - A Gate Source leakage current I GSS V GS = 8 V,VDS = V na On Characteristics Gate Threshold Voltage V GS(th) V GS = V DS, I D =-5 A -.35 -.63 -. V Static Drain-Source V GS = -4.5V, I D = -3.3A m R 5 6 On-Resistance DS(on) V GS = -.5V,I D = -.8 A 65 7 m Forward Transconductance g FS V DS = -5 V, I D = -3.3A 3. S Dynamic Characteristics Input Capacitance C iss 7 pf V Output Capacitance C DS = -6 V, V GS = V, oss 6 pf f =. MHz Reverse Transfer Capacitance C rss pf Switching Characteristics Turn-On Delay Time t d(on) 5 ns Turn-On Rise Time t r V GS = -4.5V, V DD = -6 V, 55 ns Turn-Off Delay Time t d(off) I D = -.A, R G =6., 9 ns Turn-Off Fall Time t f 6 ns Total Gate Charge Q G(TOT) 8 3 nc Threshold gate charge Q G(TH) V DS = -6 V,I D = -3.3A,. nc Gate-Source Charge Q GS V GS =-4.5V. nc Gate-Drain Charge Q GD. nc Drain-Source Diode Characteristics and Maximun Ratings Forward Diode Voltage V SD V GS = V,I S = -.6A -. 8 V Will Semiconductor Ltd. 5/8/5 Rev..9
WPM34 Typical Characteristics (T J = 5 C unless otherwise noted) V GS =-5 thru -.5 V T C = - 55 C -I D - Drain Current (A) 6 8 - V -.5 V - Drain Current (A) -I D 6 8 5 C 5 C 4 4 - V 3 4 5 -V DS - Drain-to-Source Voltage (V) Output Characteristics..5..5..5 -V GS - Gate-to-Source Voltage (V) Transfer Characteristics. 9 - On-Resistance (Ω) R DS(on).8.6.4. V GS =-.5 V V GS =-4.5 V C - Capacitance (pf) 75 6 45 3 5 C iss C oss. 4 8 6 -I D - Drain Current (A) On-Resistance vs. Drain Current C rss 4 8 6 -V DS - Drain-to-Source Voltage (V) Capacitance 5.5 - Gate-to-Source Voltage (V) -V GS 4 3 V DS =-6 V I D =-3.3 A - On-Resistance R DS(on) (Normalized).4.3....9.8 V GS =-4.5 V I D =-3.3 A.7 4 6 8 Q g - Total Gate Charge (nc) Gate Charge.6-5 - 5 5 5 75 5 5 T J - Junction Temperature ( C) On-Resistance vs. Junction Temperature Will Semiconductor Ltd. 3 5/8/5 Rev..9
WPM34 Typical Characteristics (T J = 5 C unless otherwise noted).5 -IS - Source Current (A) T J = 5 C T J = 5 C - On-Resistance (Ω) R DS(on)..9.6.3 I D = - A I D =-3.3 A....4.6.8... 3 4 5 -V SD - Source-to-Drain Voltage (V) Source-Drain Diode Forward Voltage -V GS - Gate-to-Source Voltage (V) On-Resistance vs. Gate-to-Source Voltage.4.3 I D = -5μA Variance (V) V GS(th)... Power (W) 8 6 4 T A = 5 C -. -. - 5-5 5 5 75 5 5.. 6 T J - Temperature ( C) Time (s) Threshold Voltage Single Pulse Power Limited by R DS(on)* I DM Limited -I D - Drain Current (A). I D(on) Limited T A = 5 C Single Pulse BVDSS Limited.. Safe Operating Area P(t) =. P(t) =. P(t) =. P(t) =. P(t) = P(t) = DC V DS - Drain-to-Source Voltage (V) *V GS > minimum V GS at which R DS(on) is specified Will Semiconductor Ltd. 4 5/8/5 Rev..9
WPM34 Typical Characteristics (T J = 5 C unless otherwise noted) Normalized Effective Transient Thermal Impedance Duty Cycle =.5. Notes:. P DM. t.5 t t. Duty Cycle, D =. t. Per Unit Base = R thja = 5 C/W 3. T JM - T A = P DM Z (t) thja 4. Surface Mounted Single Pulse. -4-3 - - 6 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient Will Semiconductor Ltd. 5 5/8/5 Rev..9
WPM34 Power Dissipation Characteristics.ThepackageofWPM34isSOT3-3,surfacemountedonFR4Boardusinginsqpadsize ozcu R JA is 5 /W.. The power dissipation P D is based on T J(MAX) =5 C, and the relation between T J and P D is T J =T a + R JA *P D, the maximum power dissipation is determined by R JA. 3. The R JA is the thermal impedance from junction to ambient, using larger PCB pad size can get smaller R JA and result in larger maximum power dissipation. 5 /W when mounted on ain pad of oz copper. Welding temperature curve Will Semiconductor Ltd. 6 5/8/5 Rev..9
WPM34 Packaging Information SOT3-3 Package Outline Dimension A.5.5.4.49 A....4 A.5.5.4.45 b.3.5.. c...4.8 D.8 3...9 E.5.7.59.67 E.65.95.4.6 e.95(bsc).37(bsc) e.8..7.79 L.3.6..4 8 8 Will Semiconductor Ltd. 7 5/8/5 Rev..9