P-Channel 30-V (D-S) MOSFET

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Transcription:

i59ay P-Channel 3-V (-) MOFET PROUCT UMMARY V (V) R (on) ( ) I (A) d Q g (Typ.).5 at V G = - V - 29-3 nc.775 at V G = -.5 V - 23 FEATURE Halogen-free According to IEC 29-2-2 efinition TrenchFET Power MOFET % R g and UI Tested Compliant to RoH irective 22/95/EC APPLICATION Adaptor witch Notebook O-8 8 2 3 7 G G 5 Top View Ordering Information: i59ay-t-ge3 (Lead (Pb)-free and Halogen-free) P-Channel MOFET ABOLUTE MAXIMUM RATING (T A = 25 C, unless otherwise noted) Parameter ymbol Limit Unit rain-ource Voltage V - 3 V Gate-ource Voltage V G ± 2 T C = 25 C - 29 T Continuous rain Current (T J = 5 C) C = 7 C - 23.5 I T A = 25 C - 9.7 a, b T A = 7 C - 5. a, b A Pulsed rain Current I M - 7 T Continuous ource-rain iode Current C = 25 C -.5 I T A = 25 C - 2.9 a, b Avalanche Current I A - 3 L =. mh ingle-pulse Avalanche Energy E A 5 mj T C = 25 C 7.8 T Maximum Power issipation C = 7 C 5 P W T A = 25 C 3.5 a, b T A = 7 C 2.2 a, b Operating Junction and torage Temperature Range T J, T stg - 55 to 5 C THERMAL REITANCE RATING Parameter ymbol Typical Maximum Unit Maximum Junction-to-Ambient a, c t s R thja 29 35 Maximum Junction-to-Foot teady tate R thjf 3 C/W Notes: a. urface mounted on " x " FR board. b. t = s. c. Maximum under steady state conditions is 8 C/W. d. Based on T C = 25 C. ocument Number: 9979-83-Rev. B, 2-ep- THE PROUCT ECRIBE HEREIN AN THI OCUMENT ARE UBJECT TO PECIFIC ICLAIMER, ET FORTH AT /doc?9

i59ay PECIFICATION (T J = 25 C, unless otherwise noted) Parameter ymbol Test Conditions Min. Typ. Max. Unit tatic rain-ource Breakdown Voltage V V G = V, I = - 25 µa - 3 V V Temperature Coefficient V /T J - 3 I = - 25 µa V G(th) Temperature Coefficient V G(th) /T J 5.3 mv/ C Gate-ource Threshold Voltage V G(th) V = V G, I = - 25 µa - - 2.5 V Gate-ource Leakage I G V = V, V G = ± 2 V ± V = - 3 V, V G = V - na V = - 2 V, V G = V - 75 Zero Gate Voltage rain Current I V = - 3 V, V G = V, T J = 75 C - µa V = - 2 V, V G = V, T J = 75 C - 3 On-tate rain Current a I (on) V - V, V G = - V - 3 A rain-ource On-tate Resistance a V R G = - V, I = - 5 A.39.5 (on) V G = -.5 V, I = - A.2.775 Forward Transconductance a g fs V = - V, I = - 5 A 2 ynamic b Input Capacitance C iss Output Capacitance C oss V = - 5 V, V G = V, f = MHz 8 pf Reverse Transfer Capacitance C rss 79 V = - 5 V, V G = - V, I = - 2 A 29 95 Total Gate Charge Q g 95 nc Gate-ource Charge Q gs V = - 5 V, V G = -.5 V, I = - 2 A.5 Gate-rain Charge Q gd 23.5 Gate Resistance R g f = MHz. 3 Turn-On elay Time t d(on) 3 Rise Time t r V = - 5 V, R L =.5 3 Turn-Off elaytime t d(off) I - A, V GEN = - V, R g = 8 5 Fall Time t f 2 Turn-On elay Time t d(on) 75 5 ns Rise Time t r V = - 5 V, R L =.5 3 2 Turn-Off elaytime t d(off) I - A, V GEN = -.5 V, R g = 2 Fall Time t f 8 rain-ource Body iode Characteristics Continous ource-rain iode Current I T C = 25 C - 29 Pulse iode Forward Current I M - 7 A Body iode Voltage V I = - 3 A, V G = V -.7 -.2 V Body iode Reverse Recovery Time t rr 7 3 ns Body iode Reverse Recovery Charge Q rr 7 5 nc I F = - 5 A, di/dt = A/µs, T J = 25 C Reverse Recovery Fall Time t a 22 ns Reverse Recovery Rise Time t b 5 Notes: a. Pulse test; pulse width 3 µs, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. tresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. 2 ocument Number: 9979-83-Rev. B, 2-ep- THE PROUCT ECRIBE HEREIN AN THI OCUMENT ARE UBJECT TO PECIFIC ICLAIMER, ET FORTH AT /doc?9

i59ay TYPICAL CHARACTERITIC (25 C, unless otherwise noted) 7. V G =thru V 5 3.2 I - rain Current (A) 2 28 V G =3V I - rain Current (A) 2.. T C = 25 C T C = 25 C.8 T C = - 55 C 2 3 5 V - rain-to-ource Voltage (V) Output Characteristics...8. 2. 3.2. V G - Gate-to-ource Voltage (V) Transfer Characteristics.8 9 R (on) - On-Resistance (Ω).7..5. V G =.5V V G =V C - Capacitance (pf) 72 5 3 8 C iss C oss C rss.3 28 2 5 7 I - rain Current (A) On-Resistance vs. rain Current 2 8 2 3 V - rain-to-ource Voltage (V) Capacitance. - Gate-to-ource Voltage (V) 8 I =2A V =V V =5V V =2V (Normalized) - On-Resistance..2. I =5A V G =V V G =.5V V G 2 R (on).8 3 9 2 5 Q g - Total Gate Charge (nc) Gate Charge. - 5-25 25 5 75 25 5 T J -Junction Temperature ( C) On-Resistance vs. Junction Temperature ocument Number: 9979-83-Rev. B, 2-ep- 3 THE PROUCT ECRIBE HEREIN AN THI OCUMENT ARE UBJECT TO PECIFIC ICLAIMER, ET FORTH AT /doc?9

i59ay TYPICAL CHARACTERITIC (25 C, unless otherwise noted).3 I =5A I - ource Current (A).. T J = 5 C T J = 25 C R (on) - On-Resistance (Ω).2.8.2. T J = 25 C...2...8..2 V -ource-to-rain Voltage (V) ource-rain iode Forward Voltage T J = 25 C. 2 8 V G - Gate-to-ource Voltage (V) On-Resistance vs. Gate-to-ource Voltage.8 2 V G(th) Variance (V)...2. I = 25 µa I =5mA Power (W) 2 8 -.2 -. - 5-25 25 5 75 25 5 T J - Temperature ( C) Threshold Voltage... Time (s) ingle Pulse Power, Junction-to-Ambient - rain Current (A) I... Limited byr (on) * T A = 25 C ingle Pulse BV. V - rain-to-ource Voltage (V) * V G > minimum V G at which R (on) is specified afe Operating Area ms ms ms s s C ocument Number: 9979-83-Rev. B, 2-ep- THE PROUCT ECRIBE HEREIN AN THI OCUMENT ARE UBJECT TO PECIFIC ICLAIMER, ET FORTH AT /doc?9

i59ay TYPICAL CHARACTERITIC (25 C, unless otherwise noted) 35 28 I - rain Current (A) 2 7 25 5 75 25 5 T C - Case Temperature ( C) Current erating* 2. 8. Power (W) Power (W).2.8 2. 25 5 75 25 5 T C - Case Temperature ( C). 25 5 75 25 5 T C - Case Temperature ( C) Power, Junction-to-Foot Power erating, Junction-to-Ambient * The power dissipation P is based on T J(max) = 5 C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. ocument Number: 9979-83-Rev. B, 2-ep- 5 THE PROUCT ECRIBE HEREIN AN THI OCUMENT ARE UBJECT TO PECIFIC ICLAIMER, ET FORTH AT /doc?9

i59ay TYPICAL CHARACTERITIC (25 C, unless otherwise noted) uty Cycle =.5 Normalized Effective Transient Thermal Impedance.2 Notes:.. P M.5 t t 2 t. uty Cycle, =.2 t 2 2. Per Unit Base = R thja = 8 C/W 3. T JM -T A =P M Z (t) thja ingle Pulse. urface Mounted. -3-2 quare Wave Pulse uration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient - Normalized Effective Transient Thermal Impedance. uty Cycle =.5.2..5.2. - ingle Pulse -3-2 quare Wave Pulse uration (s) Normalized Thermal Transient Impedance, Junction-to-Foot - maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for ilicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see /ppg?9979. ocument Number: 9979-83-Rev. B, 2-ep- THE PROUCT ECRIBE HEREIN AN THI OCUMENT ARE UBJECT TO PECIFIC ICLAIMER, ET FORTH AT /doc?9

Package Information OIC (NARROW): 8-LEA JEEC Part Number: M-2 8 7 5 E H 2 3 A.25 mm (Gage Plane) h x 5 C All Leads e B A L q. mm." MILLIMETER INCHE IM Min Max Min Max A.35.75.53.9 A..2..8 B.35.5..2 C.9.25.75..8 5..89.9 E 3.8..5.57 e.27 BC.5 BC H 5.8.2.228.2 h.25.5..2 L.5.93.2.37 q 8 8...8.2 ECN: C-527-Rev. I, -ep- WG: 598 ocument Number: 792 -ep-

Application Note 82 RECOMMENE MINIMUM PA FOR O-8.72 (.39).28 (.7) APPLICATION NOTE.7 (.9).2 (.28).52 (3.8).22 (.559).5 (.27) Recommended Minimum Pads imensions in Inches/(mm) Return to Index Return to Index ocument Number: 72 22 Revision: 2-Jan-8

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