SPPN6C, SPBN6C SPN6C Cool MOS Power Transistor Feature New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated Extreme dv/dt rated Ultra low effective capacitances PTO33 Product Summary V DS @ T jmax 65 V R DS(on).38 Ω I D PTO633 PTO3 PTO33 3 Type Package Ordering Code SPPN6C PTO3 Q674S495 SPBN6C PTO633 Q674S498 SPN6C PTO33 Q674S433 Marking N6C N6C N6C Maximum Ratings Parameter Symbol Value Unit Continuous drain current T C = 5 C T C = C I D SPP_B 7 SP ) 7 ) Pulsed drain current, t p limited by T jmax I D puls valanche energy, single pulse E S 34 34 mj I D =5.5, V DD =5V valanche energy, repetitive t R limited by T jmax ) E R.6.6 I D =, V DD =5V valanche current, repetitive t R limited by T jmax I R Reverse diode dv/dt dv/dt 6 6 V/ns I S =, V DS < V DD, di/dt=/µs, T jmax =5 C Gate source voltage V GS ± ± V Gate source voltage C (f >Hz) V GS ±3 ±3 Power dissipation, T C = 5 C P tot 5 33 W Operating and storage temperature T j, T stg 55...+5 C Page 8
SPPN6C, SPBN6C SPN6C Thermal Characteristics Parameter Symbol Values Unit min. typ. max. Characteristics Thermal resistance, junction case R thjc K/W Thremal resistance, junction case, FullPK R thjc_fp 3.8 Thermal resistance, junction ambient, leaded R thj 6 Thermal resistance, junction ambient, FullPK R thj_fp 8 SMD version, device on PCB: R thj @ min. footprint @ 6 cm cooling area 3) 35 6 Linear derating factor W/K Linear derating factor, FullPK.6 Soldering temperature,.6 mm (.63 in.) from case for s T sold 6 C Electrical Characteristics, at T j = 5 C, unless otherwise specified Static Characteristics Drainsource breakdown voltage V (BR)DSS 6 V V GS =V, I D =.5m Drainsource avalanche breakdown voltage V (BR)DS 7 V GS =V, I D = Gate threshold voltage, V GS = V DS V GS(th) 3.5 4.5 5.5 I D =.5m Zero gate voltage drain current V DS = 6 V, V GS = V, T j = 5 C V DS = 6 V, V GS = V, T j = 5 C I DSS µ 5 5 Gatesource leakage current I GSS n V GS =V, V DS =V Drainsource onstate resistance R DS(on).34.38 Ω V GS =V, I D =7, T j =5 C Gate input resistance R G.86 f = MHz, open drain Page 8
SPPN6C, SPBN6C SPN6C Electrical Characteristics Parameter Symbol Conditions Values Unit min. typ. max. Characteristics Transconductance g fs V DS *I D *R DS(on)max, 3 6 S I D =7 Input capacitance C iss V GS =V, V DS =5V, 46 pf Output capacitance C oss f=mhz 6 Reverse transfer capacitance C rss Effective output capacitance, 4) energy related Effective output capacitance, 5) time related C o(er) V GS =V, V DS =V to 48V 45 C o(tr) 85 Turnon delay time t d(on) V DD =38V, V GS =/3V, 3 ns Rise time t r I D =, 4 Turnoff delay time t d(off) R G =6.8Ω, T j =5 C 48 7 Fall time t f 9 3.5 Gate Charge Characteristics Gate to source charge Q gs V DD =35V, I D =.5 nc Gate to drain charge Q gd 4 Gate charge total Q g V DD =35V, I D =, 4.5 54 V GS = to V Gate plateau voltage V (plateau) V DD =35V, I D = 8 V Limited only by maximum temperature Repetitve avalanche causes additional power losses that can be calculated as PV =E R *f. 3 Device on 4mm*4mm*.5mm epoxy PCB FR4 with 6cm² (one layer, 7 µm thick) copper area for drain connection. PCB is vertical without blown air. 4 Co(er) is a fixed capacitance that gives the same stored energy as C oss while V DS is rising from to 8% V DSS. 5 Co(tr) is a fixed capacitance that gives the same charging time as C oss while V DS is rising from to 8% V DSS. Page 3 8
SPPN6C, SPBN6C SPN6C Electrical Characteristics Parameter Symbol Conditions Values Unit min. typ. max. Characteristics Inverse diode continuous I S T C =5 C forward current Inverse diode direct current, I SM pulsed Inverse diode forward voltage V SD V GS =V, I F =I S. V Reverse recovery time t rr V R =35V, I F =I S, 65 5 ns Reverse recovery charge Q di F /dt=/µs rr 7.9 µc Peak reverse recovery current I rrm 3 Peak rate of fall of reverse di rr /dt T j =5 C 6 /µs recovery current Typical Transient Thermal Characteristics Symbol Value Unit Symbol Value Unit SPP_B SP SPP_B SP R th.5.5 K/W C th.. Ws/K R th.34.3 C th.79.455 R th3.4.43 C th3.84.638 R th4.6.9 C th4.57.44 R th5.49.35 C th5..737 R th6.59.499 C th6.89.4 P tot (t) T j R th R th,n T case External Heatsink C th C th C th,n T amb Page 4 8
SPPN6C, SPBN6C SPN6C Power dissipation P tot = f (T C ) Power dissiaption FullPK P tot = f (T C ) 4 SPPN6C W W 35 5 Ptot 9 8 Ptot 7 6 5 5 4 3 5 4 6 8 C 6 T C 4 6 8 C 6 T C 3 Safe operating area I D = f ( V DS ) parameter : D =, T C =5 C 4 Safe operating area FullPK I D = f (V DS ) parameter: D =, T C = 5 C ID ID tp =. ms tp =. ms tp =. ms tp = ms DC tp =. ms tp =. ms tp =. ms tp = ms tp = ms DC V 3 V DS Page 5 V 3 V DS 8
SPPN6C, SPBN6C SPN6C 5 Transient thermal impedance Z thjc = f (t p ) parameter: D = t p /T K/W 6 Transient thermal impedance FullPK Z thjc = f (t p ) parameter: D = t p /t K/W ZthJC 3 D =.5 D =. D =. D =.5 D =. D =. single pulse 3 D =.5 D =. D =. D =.5 D =. D =. single pulse 4 7 6 5 4 3 s t p 7 Typ. output characteristic I D = f (V DS ); T j =5 C parameter: t p = µs, V GS 4 7 6 5 4 3 8 Typ. output characteristic I D = f (V DS ); T j =5 C parameter: t p = µs, V GS Helvetica t p ID 35 5 V V V ID 8 4 V V V 9V 8V 9V 5 5 5 5 V 5 V DS 8V 7V 6V Page 6 8 6 4 5 5 V 5 V DS 7V 6V 8
SPPN6C, SPBN6C SPN6C 9 Typ. drainsource on resistance R DS(on) =f(i D ) parameter: T j =5 C, V GS Drainsource onstate resistance R DS(on) = f (T j ) parameter : I D = 7, V GS = V SPPN6C. Ω.8 RDS(on) Ω.5 V V V 9V 8V 7V 6V RDS(on).6.4..8.6.4 98% typ. 4 6 8 4 8 I D Typ. transfer characteristics I D = f ( V GS ); V DS x I D x R DS(on)max parameter: t p = µs 3 6 6 C 8 T j Typ. gate charge V GS = f (Q Gate) parameter: I D = pulsed 6 SPPN6C V 4, V DS max,8 V DS max ID 5 C 5 C VGS 6 8 6 8 4 4 4 8 V V GS Page 7 3 4 5 nc 65 Q Gate 8
SPPN6C, SPBN6C SPN6C 3 Forward characteristics of body diode I F = f (V SD ) parameter: Tj, tp = µs 4 Typ. switching time t = f (I D ), inductive load, T j =5 C par.: V DS =38V, V GS =/+3V, R G =6.8Ω SPPN6C 3 ns t r IF t t d(off) t f T j = 5 C typ T j = 5 C typ t d(on) T j = 5 C (98%) T j = 5 C (98%).4.8..6.4 V 3 V SD 5 Typ. switching time t = f (R G ), inductive load, T j =5 C par.: V DS =38V, V GS =/+3V, I D = 5 5 3 I D 6 Typ. switching losses E = f (I D ), inductive load, T j =5 C par.: V DS =38V, V GS =/+3V, R G =6.8Ω 3 ns mws.7 *) E on includes SDP6S6 diode commutation losses. t d(off) t d(on).5 t E t r.4 t f.3. E on * E off. 3 4 5 Ω 7 R G Page 8 5 5 5 I D 8
SPPN6C, SPBN6C SPN6C 7 Typ. switching losses E = f(r G ), inductive load, T j =5 C par.: V DS =38V, V GS =/+3V,I D = 8 valanche SO I R = f (t R ) par.: T j 5 C.4 *) E on includes SDP6S6 diode commutation losses. mws 9 8 E IR 7. E on * E off 6 5 Tj(STRT)=5 C 4. 3 T j (STRT)=5 C 3 4 5 Ω 7 R G 9 valanche energy E S = f (T j ) par.: I D = 5.5, V DD = 5 V 35 mj 3 µs 4 t R Drainsource breakdown voltage V (BR)DSS = f (T j ) 7 SPPN6C V ES 5 V(BR)DSS 68 66 64 5 6 6 58 5 56 4 6 8 C 6 T j 54 6 6 C 8 T j Page 9 8
SPPN6C, SPBN6C SPN6C valanche power losses P R = f (f ) parameter: E R =.6mJ 3 W Typ. capacitances C = f (V DS ) parameter: V GS =V, f= MHz 4 pf C iss 3 PR C 5 C oss C rss 5 4 5 Hz 6 f 3 4 V 6 V DS 3 Typ. C oss stored energy E oss =f(v DS ) µj 7.5 6 5.5 Eoss 5 4.5 4 3.5 3.5.5.5 3 4 V 6 V DS Page 8
SPPN6C, SPBN6C SPN6C Definition of diodes switching characteristics Page 8
SPPN6C, SPBN6C SPN6C PTO3 ±.4 3.7 ±. B.7±.3 4.44 5.38±.6 ±..8.5 9.98 ±.48 C 5.3 ±.9 3.5 ±.5 3x.75 ±..5 ±..5±..7 ±. x.54.5 M B C ll metal surfaces tin plated, except area of cut. Metal surface min. x=7.5, y=.3 PTO633 (D PK) (5)...3 9.5 ±. ±.3 )...5 5.8 ±. 8.5 ) 7.55 ).75 ±..5.54.7 Typical ll metal surfaces: tin plated, except area of cut. Metal surface min. x=7.5, y=6.9 4.7 ±.5 B ±.3.7 ±...4 8 MX. 4.4.5 ±..5.5 M B. B Page 8
SPPN6C, SPBN6C SPN6C PTO33 (FullPK).5 ±.5.5 ±. 6. ±..7 ±.5 4.7 ±.5 5.99 3.6 ±.5 ±.5 4. ±.5.79 ±.5 9.68 ±.5 3.3 ±.5 7 3 +.3.8. +.3.7..57 ±. +.5.5..54 Please refer to mounting instructions (application note NTO33) Page 3 8
SPPN6C, SPBN6C SPN6C Published by Infineon Technologies G, Bereichs Kommunikation St.MartinStrasse 53, D854 München Infineon Technologies G 999 ll Rights Reserved. ttention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of noninfringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in lifesupport devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that lifesupport device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Page 4 8
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