N-Channel -V (-) MOFET TM PROUCT UMMARY V (V) R (on) (Ω) I (A) a Q g (Typ.).9 at V G = V.8 nc. at V G =. V FEATURE Halogen-free TrenchFET Power MOFET Optimized for High-ide ynchronous Rectifier Operation % R g Tested % UI Tested O-8 APPLICATION Notebook CPU Core - High-ide witch 8 7 G G Top View N-Channel MOFET ABOLUTE MAXIMUM RATING T A = C, unless otherwise noted Parameter ymbol Limit Unit rain-ource Voltage V V Gate-ource Voltage V G ± T C = C T Continuous rain Current (T J = C) C = 7 C I T A = C b, c T A = 7 C 9 b, c A Pulsed rain Current I M T C = C.8 Continuous ource-rain iode Current I T A = C. b, c ingle Pulse Avalanche Current I L =. mh A Avalanche Energy E A mj T C = C. T C = 7 C.8 Maximum Power issipation P W T A = C. b, c T A = 7 C. b, c Operating Junction and torage Temperature Range T J, T stg - to C THERMAL REITANCE RATING Parameter ymbol Typical Maximum Unit Maximum Junction-to-Ambient b, d t s R thja 8 Maximum Junction-to-Foot (rain) teady tate R thjf 8 C/W Notes: a. Base on T C = C. b. urface Mounted on " x " FR board. c. t = s. d. Maximum under teady tate conditions is 8 C/W.
TM PECIFICATION T J = C, unless otherwise noted Parameter ymbol Test Conditions Min. Typ. Max. Unit tatic rain-ource Breakdown Voltage V V G = V, I = µa V V Temperature Coefficient ΔV /T J 8 I = µa V G(th) Temperature Coefficient ΔV G(th) /T J - mv/ C Gate-ource Threshold Voltage V G(th) V = V G, I = µa.. V Gate-ource Leakage I G V = V, V G = ± V ± na V = V, V G = V Zero Gate Voltage rain Current I V = V, V G = V, T J = C µa On-tate rain Current a I (on) V V, V G = V A V G = V, I = A rain-ource On-tate Resistance a.9. R (on) V G =. V, I = A.. Ω Forward Transconductance a g fs V = V, I = A ynamic b Input Capacitance C iss 8 Output Capacitance C oss V = V, V G = V, f = MHz 9 pf Reverse Transfer Capacitance C rss 7 V Total Gate Charge Q = V, V G = V, I = A g.8. nc Gate-ource Charge Q gs V = V, V G = V, I = A. Gate-rain Charge Q gd. Gate Resistance R g f = MHz..8. Ω Turn-On elay Time t d(on) Rise Time t r V = V, R L =. Ω 8 Turn-Off elay Time t d(off) I 9 A, V GEN =. V, R g = Ω Fall Time t f Turn-On elay Time t d(on) 8 ns Rise Time t r V = V, R L =. Ω Turn-Off elay Time t d(off) I 9 A, V GEN = V, R g = Ω Fall Time t f 8 rain-ource Body iode Characteristics Continuous ource-rain iode Current I T C = C Pulse iode Forward Current a I M A Body iode Voltage V I = 9 A.8. V Body iode Reverse Recovery Time t rr ns Body iode Reverse Recovery Charge Q rr nc I F = 9 A, di/dt = A/µs, T J = C Reverse Recovery Fall Time t a 8 ns Reverse Recovery Rise Time t b 7 Notes: a. Pulse test; pulse width µs, duty cycle %. b. Guaranteed by design, not subject to production testing. tresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERITIC C, unless otherwise noted TM V G =thru V I - rain Current (A) V G =V I - rain Current (A) T C =- C T C = C T C = C 8 V - rain-to-ource Voltage (V) Output Characteristics....... V G - Gate-to-ource Voltage (V) Transfer Characteristics. - On-Resistance (Ω) R (on)...9.7 V G =.V V G =V C - Capacitance (pf) 9 C iss C oss. I - rain Current (A) On-Resistance vs. rain Current and Gate Voltage C rss 8 V - rain-to-ource Voltage (V) Capacitance.8 - Gate-to-ource Voltage (V) V G 8 I = A V =V V = V R (on) - On-Resistance (Normalized)...9 I = A V G =V V G =.V 8 Q g - Total Gate Charge (nc) Gate Charge. - - 7 T J -Junction Temperature ( C) On-Resistance vs. Junction Temperature
TYPICAL CHARACTERITIC C, unless otherwise noted TM. - ource Current (A) I.. T J = C T J = C - On-Resistance (Ω) R (on)..... T J = C T J = C......8.. V -ource-to-rain Voltage (V) ource-rain iode Forward Voltage. 8 V G - Gate-to-ource Voltage (V) On-Resistance vs. Gate-to-ource Voltage.. (V) V G(th).8.. I = µa Power (W).. - - 7 T J - Temperature ( C) Threshold Voltage - - - Time (s) ingle Pulse Power, Junction-to-Ambient Limited by R (on) * - rain Current (A) I. T A = C ingle Pulse BV Limited µa ms ms ms s s C.. V - rain-to-ource Voltage (V) * V G > minimum V G at which R (on) is specified afe Operating Area, Junction-to-Ambient
TYPICAL CHARACTERITIC C, unless otherwise noted TM 8 I - rain Current (A) 9 7 T C - Case Temperature ( C) Current erating*.. Power (W) Power (W).. 7. 7 T C - Case Temperature ( C) T A -Ambient Temperature ( C) Power erating, Junction-to-Foot Power erating, Junction-to-Ambient * The power dissipation P is based on T J(max) = C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit.
TYPICAL CHARACTERITIC C, unless otherwise noted TM Normalized Ef fective T ransient Thermal Impedance uty Cycle =.. Notes:.. P M. t t t.. uty Cycle, = t. Per Unit Base = R th J A = 7 C/W. T ingle Pulse JM - T A = P M Z (t) th J A. urface Mounted. - - - - quare Wave Pulse uration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient Normalized Effective Transient Thermal Impedance. uty Cycle =...... - ingle Pulse - - quare Wave Pulse uration (s) Normalized Thermal Transient Impedance, Junction-to-Foot -
Package Information OIC (NARROW): 8-LEA JEEC Part Number: M- 8 7 E H A. mm (Gage Plane) h x C All Leads e B A L q. mm." IM MILLIMETER INCHE Min Max Min Max A..7..9 A....8 B.... C.9..7..8..89.9 E.8...7 e.7 BC. BC H.8..8. h.... L..9..7 q 8 8...8. ECN: C-7-Rev. I, -ep- WG: 98
Application Note RECOMMENE MINIMUM PA FOR O-8.7 (.9).8 (.7) APPLICATION NOTE.7 (.9). (.8). (.8). (.9). (.7) Recommended Minimum Pads imensions in Inches/(mm) Return to Index Return to Index
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