i4336y N-Channel 3-V (-) MOFET PROUCT UMMARY V (V) r (on) (Ω) I (A) Q g (Typ) 3.35 at V G = V 5.4 at V G = 4.5 V 36 O-8 FEATURE Ultra Low On-Resistance Using High ensity TrenchFET Gen II Power MOFET Technology Q g Optimized % R g Tested APPLICATION ynchronous Buck Low-ide - Notebook - erver - Workstation ynchronous Rectifier, POL Available RoH* COMPLIANT 8 7 3 6 G 4 5 G Top View Ordering Information: i4336y-t i4336y-t-e3 (Lead (Pb)-free) N-Channel MOFET ABOLUTE MAXIMUM RATING T A = 5 C, unless otherwise noted Parameter ymbol sec teady tate Unit rain-ource Voltage V 3 V Gate-ource Voltage V G ± Continuous rain Current (T J = 5 C) a T A = 5 C 5 7 I T A = 7 C 3 Pulsed rain Current ( µs Pulse Width) I M 7 A Continuous ource Current (iode Conduction) a I.9.3 Avalanche Current L =. mh I A 5 T A = 5 C Maximum Power issipation a 3.5.6 P W T A = 7 C. Operating Junction and torage Temperature Range T J, T stg - 55 to 5 C THERMAL REITANCE RATING Parameter ymbol Typical Maximum Unit Maximum Junction-to-Ambient a t sec 9 35 R thja teady tate 67 8 C/W Maximum Junction-to-Foot (rain) teady tate R thjf 3 6 Notes: a. urface Mounted on " x " FR4 Board. * Pb containing terminations are not RoH compliant, exemptions may apply. ocument Number: 747-736-Rev., -Feb-7
i4336y PECIFICATION T J = 5 C, unless otherwise noted Parameter ymbol Test Conditions Min Typ Max Unit tatic Gate Threshold Voltage V G(th) V = V G, I = 5 µa. 3. V Gate-Body Leakage I G V = V, V G = ± V ± na V = 3 V, V G = V Zero Gate Voltage rain Current I V = 3 V, V G = V, T J = 55 C 5 µa On-tate rain Current a I (on) V 5 V, V G = V 3 A V G = V, I = 5 A rain-ource On-tate Resistance a.6.35 r (on) V G = 4.5 V, I = A.33.4 Ω Forward Transconductance a g fs V = 5 V, I = 5 A iode Forward Voltage a V I =.9 A, V G = V.7. V ynamic b Input Capacitance C iss 56 Output Capacitance C oss V = 5 V, V G = V, f = MHz 86 pf Reverse Transfer Capacitance C rss 45 Total Gate Charge Q g 36 5 Gate-ource Charge Q gs V = 5 V, V G = 4.5 V, I = A 8 nc Gate-rain Charge Q gd Gate Resistance R g.8.3. Ω Turn-On elay Time t d(on) 4 35 Rise Time t r V = 5 V, R L = 5 Ω 6 5 Turn-Off elay Time t d(off) I A, V GEN = V, R g = 6 Ω 9 4 ns Fall Time t f 3 5 ource-rain Reverse Recovery Time t rr I F =.9 A, di/dt = A/µs 45 7 Notes: a. Pulse test; pulse width 3 µs, duty cycle %. b. Guaranteed by design, not subject to production testing. tresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERITIC 5 C, unless otherwise noted 6 V G = thru 4 V 5 6 5 - rain Current (A) I 4 3 3 V..4.8..6. - rain Current (A) I 4 3 T C = 5 C 5 C - 55 C..5..5..5 3. 3.5 4. V - rain-to-ource Voltage (V) Output Characteristics V G - Gate-to-ource Voltage (V) Transfer Characteristics ocument Number: 747-736-Rev., -Feb-7
i4336y TYPICAL CHARACTERITIC 5 C, unless otherwise noted.5 7 r (on) - On-Resistance ( Ω).4.3.. V G = 4.5 V V G = V C - Capacitance (pf) 6 5 4 3 C rss C oss C iss. 3 4 5 I - rain Current (A) On-Resistance vs. rain Current 6 8 4 3 V - rain-to-ource Voltage (V) Capacitance 6.6 - Gate-to-ource Voltage (V) 5 4 3 V = 5 V I = A r (on) - On-Resistance (Normalized).4.. V G = V I = 5 A V G.8 5 5 5 3 35 4 45 Q g - Total Gate Charge (nc) Gate Charge 5.6-5 - 5 5 5 75 5 5 T J - Junction Temperature ( C) On-Resistance vs. Junction Temperature.5 - ource Current (A) I T J = 5 C T J = 5 C r (on) - On-Resistance ( Ω)..9.6.3 I = 5 A....4.6.8.. V - ource-to-rain Voltage (V) ource-rain iode Forward Voltage. 4 6 8 V G - Gate-to-ource Voltage (V) On-Resistance vs. Gate-to-ource Voltage ocument Number: 747-736-Rev., -Feb-7 3
i4336y TYPICAL CHARACTERITIC 5 C, unless otherwise noted.4. I = 5 µa 6 5 Variance (V) V G(th). -. -.4 -.6 Power (W) 4 3 -.8 -. - 5-5 5 5 75 5 5 - - 6 T J - Temperature ( C) Threshold Voltage Time (sec) ingle Pulse Power *Limited by r (on) ms ms s. T C = 5 C ingle Pulse s dc... V - rain-to-ource Voltage (V) *V G > minimum V G at which r (on) is specified afe Operating Area, Junction-to-Case Normalized Effective Transient Thermal Impedance uty Cycle =.5. Notes:.. P M.5 t t t.. uty Cycle, = t. Per Unit Base = R thja = 67 C/W 3. T JM - T A = P M Z (t) thja ingle Pulse 4. urface Mounted. - 4-3 - - 6 quare Wave Pulse uration (sec) Normalized Thermal Transient Impedance, Junction-to-Ambient 4 ocument Number: 747-736-Rev., -Feb-7
i4336y TYPICAL CHARACTERITIC 5 C, unless otherwise noted Normalized Effective Transient Thermal Impedance. uty Cycle =.5...5. ingle Pulse. -4-3 - quare Wave Pulse uration (sec) Normalized Thermal Transient Impedance, Junction-to-Foot - maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for ilicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http:///ppg?747. ocument Number: 747-736-Rev., -Feb-7 5
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