6-Pack IGBT Module Features: Trench & Field Stop IGBT Short Circuit Rated 1μs Low Saturation Voltage: V CE (sat) = 2.V @ I C = 3A, T j =25 Low Switching Loss 1% RBSOA Tested(2 Ic) Low Stray Inductance AlN DBC substrate for better thermal conductivity Lead Free, Compliant with RoHS Requirement Applicatio: High Power Converters Motor Drivers UPS Systems IGBT, Inverter Maximum Rated Values (T C =25 unless otherwise specified) V CES Collector-Emitter Blocking Voltage 125 V V GES Gate-Emitter Voltage ±2 V I C Continuous Collector Current T C = 8 3 A T C = 25 6 A I CM(1) Peak Collector Current Repetitive T J = 175 6 A t SC Short Circuit Withstand Time >1 μs P D Maximum Power Dissipation per IGBT T C = 25 T Jmax =175 25 W Page 1 of 9 Rev..1 3/3/217
Electrical Characteristics of IGBT (T C =25 unless otherwise specified) Static characteristics Symbol Preliminary Data Sheet Description Conditio Min Typ Max Unit V GE(th) Gate-Emitter Threshold Voltage I C = 2 ma, V CE = V GE 4.5 5.3 6.5 V V CE(sat) I CES I GES Collector-Emitter Saturation Voltage Collector-Emitter Leakage Current Gate-Emitter Leakage Current I C =3A, V GE = 15V T J = 25 2. 2.4 V T J = 125 2.3 V V GE = V, V CE = V CES, T J = 25 V GE = ±2V, V CE = V, T J = 25 V 1 ma 4 na R G_INT Internal Gate Resistance TBD Ω C ies Input Capacitance V CE = 25V, V GE = V, 3.8 nf C oes Output Capacitance f =1MHz 2.6 nf C res Reverse Trafer Capacitance 1.43 nf Switching Characteristics T J = 25 899 t d(on) Turn-on Delay Time T J = 125 9 T J = 25 198 t r Rise Time T J = 125 27 t d(off) Turn-off Delay Time V CC = 75V,I C = 3A, R G = 1Ω,V GE = ±15V, Inductive Load T J = 25 783 T J = 125 825 T J = 25 123 t f Fall Time T J = 125 15 T J = 25 5.5 E on Turn-on Switching Loss T J = 125 62.9 mj Page 2 of 9 Rev..1 3/3/217
T J = 25 29.6 E off Turn-off Switching Loss T J = 125 35.9 mj V CC = 75V,I C = 3A, R G = 1Ω,V GE = ±15V, Inductive Load T J = 25 234 Q g Total Gate Charge T J = 125 236 nc RBSOA SCSOA Reverse Bias Safe Operation Area Short Circuit Safe Operation Area I C =6A,V CC =15V,Vp=12V, Rg = 1Ω, V GE =+15V to V, T J =15 C V CC < 75V, V GE = 15V, Trapezoid 1 μs R θjc IGBT Thermal Resistance: Junction-To-Case.6 /W Diode, Inverter Maximum Rated Values (T C =25 unless otherwise specified) V RRM Repetitive Peak Reverse Voltage 12 V I F Diode Continuous Forward Current 3 A I FM Repetitive Peak Forward Current 6 A Electrical Characteristics of FWD (T C =25 unless otherwise specified) Symbol Description Conditio Min Typ Max Unit T J = 25 1.6 V FM Forward Voltage I F = 3A, V GE = V T J = 125 1.7 V T J = 25 32 t rr Reverse Recovery Time T J = 125 485 I rr Peak Reverse Recovery Current I F =3A, di/dt =1213A/μs, V rr = 75V, V GE = -15V T J = 25 166 T J = 125 2 A Q rr Reverse Recovery Charge T J = 25 32.2 µc Page 3 of 9 Rev..1 3/3/217
T J = 125 56.2 T J = 25 13.7 E rec Reverse Recovery Energy T J = 125 25.3 mj R θjc Diode Thermal Resistance: Junction-To-Case.99 /W Internal NTC-Thermistor Characteristics Symbol Description Min Typ Max Unit R 25 T C =25 5 kω R/R T C =1,R 1 =481Ω ±5 % P 25 T C =25 5 mw B 25/5 R 2 =R 25 exp[b 25/5 (1/T 2-1/(298.15K))] 338 K B 25/8 R 2 =R 25 exp[b 25/8 (1/T 2-1/(298.15K))] 344 K Module Symbol Description Min Typ Max Unit V iso Isolation Voltage(All Terminals Shorted) f = 5Hz, 1minute 25 V T J Maximum Junction Temperature 175 T JOP Maximum Operating Junction Temperature Range -4 +15 T stg Storage Temperature -4 +125 R θcs Case-To-Sink (Conductive Grease Applied).2 /W M Mounting Screw:M5 3. 6. N m M Power Terminals Screw: M6 3. 6. N m G Weight 39 g Base plate: Copper, Isolation substrate: AlN Page 4 of 9 Rev..1 3/3/217
6 5 VGE=15V Tj=25 Tj=125 6 5 Tj=125 VGE=9V VGE=11V VGE=13V VGE=15V VGE=17V 4 4 IC(A) 3 IC(A) 3 2 2 1 1 1.2 1.4 1.6 1.8 2. 2.2 2.4 2.6 2.8 3. 3.2 3.4 VCE(V) 1. 1.2 1.4 1.6 1.8 2. 2.2 2.4 2.6 2.8 3. 3.2 3.4 VCE(V) Fig.1 Typical Saturation Voltage Characteristics Fig.2 Typical Output Characteristics 6 Tj=25 Tj=125 1 Rtyp 5 8 4 6 IF(A) 3 R(Kohm) 4 2 1 2 1. 1.2 1.4 1.6 1.8 2. 2.2 2.4 VF(V) 1 2 3 4 5 6 7 8 9 1 11 12 TC( ) Fig.3 Forward Characteristics of FWD Fig.4 NTC Temperature Characteristics Page 5 of 9 Rev..1 3/3/217
14 12 1 VCC = 75V,RG = 1Ω VGE = ±15V,TJ=125 Eon Eoff Erec 12 1 VCC = 75V,IC = 3A VGE = ±15V,TJ=125 Eon Eoff Erec 8 8 E(mJ) 6 E(mJ) 6 4 4 2 2 1 2 3 4 5 6 IC(A) Fig.5 Typical Switching Loss vs. Collector Current 2 4 6 8 1 12 14 16 18 2 RG(Ω) Fig.6 Typical Switching Loss vs. Gate Resistance.6 IGBT.1 Diode.5.8 RθJC( /W).4.3.2 RθJC( /W).6.4.1.2. 1E-5 1E-4 1E-3.1.1 1 time(s) Fig.7 Traient Thermal Impedance (IGBT). 1E-5 1E-4 1E-3.1.1 1 time(s) Fig.8 Traient Thermal Impedance (Diode) Page 6 of 9 Rev..1 3/3/217
6 4 IC(A) 2 TJ=125 Module Chip 2 4 6 8 1 12 VCES(V) Fig.9 Reverse Bias Safe Operation Area (RBSOA) Page 7 of 9 Rev..1 3/3/217
Internal Circuit Package Outline (Unit: mm): Page 8 of 9 Rev..1 3/3/217
Revision History Date Revision Notes 3/3/217.1 Initial release of preliminary datasheet. Global Power Technologies Group 2692 Prism Place Lake Forest, CA 9263 TEL (949) 27-75 FAX (949) 613-76 E-mail: info@gptechgroup.com Web site: www.gptechgroup.com Notes RoHS Compliance The levels of RoHS restricted materials in this product are below the maximum concentration values (also referred to as the threshold limits) permitted for such substances, or are used in an exempted application, in accordance with EU Directive 211/65/EC (RoHS2), as implemented March, 213. RoHS Declaratio for this product can be obtained from the Product Documentation sectio of www.gptechgroup.com. REACh Compliance REACh substances of high concern (SVHCs) information is available for this product. Since the European Chemical Agency (ECHA) has published notice of their intent to frequently revise the SVHC listing for the foreseeable future, please contact our office at GPTG Headquarters in Lake Forest, California to iure you get the most up-to-date REACh SVHC Declaration. REACh banned substance information (REACh Article 67) is also available upon request. This product has not been designed or tested for use in, and is not intended for use in, applicatio implanted into the human body nor in applicatio in which failure of the product could lead to death, personal injury or property damage, including but not limited to equipment used in the operation of nuclear facilities, life-support machines, cardiac defibrillators or similar emergency medical equipment, aircraft navigation or communication or control systems, or air traffic control. To obtain additional technical information or to place an order for this product, please contact us. The information in this datasheet is provided by Global Power Technologies Group. GPTG reserves the right to make changes, correctio, modificatio, and improvements of datasheet without notice. Page 9 of 9 Rev..1 3/3/217