P- 9533 Si4435YPbF HEXFET Power MOSFET Utra Low On-Resistance P-Channe MOSFET Surface Mount vaiabe in Tape & Ree Lead-Free S S S G 2 3 8 7 6 4 5 V SS = -30V R S(on) = 0.020Ω escription These P-channe HEXFET Power MOSFETs from Internationa Rectifier utiize advanced processing techniques to achieve the extremey ow on-resistance per siicon area. This benefit provides the designer with an extremey efficient device for use in battery and oad management appications.. Top View The SO-8 has been modified through a customized eadframe for enhanced therma characteristics and mutipe-die capabiity making it idea in a variety of power appications. With these improvements, mutipe devices can be used in an appication with dramaticay reduced board space. The package is designed for vapor phase, infrared, or wave sodering techniques. SO-8 bsoute Maximum Ratings Parameter Max. Units V S rain- Source Votage -30 V I @ T = 25 C Continuous rain Current, V GS @ -0V -8.0 I @ T = 70 C Continuous rain Current, V GS @ -0V -6.4 I M Pused rain Current -50 P @T = 25 C Power issipation 2.5 P @T = 70 C Power issipation.6 W Linear erating Factor 0.02 W/ C V GS Gate-to-Source Votage ± 20 V T J, T STG Junction and Storage Temperature Range -55 to + 50 C Therma Resistance Parameter Max. Units R θj Maximum Junction-to-mbientƒ 50 C/W www.irf.com 09/30/04
Si4435YPbF Eectrica Characteristics @ T J = 25 C (uness otherwise specified) Parameter Min. Typ. Max. Units Conditions V (BR)SS rain-to-source Breakdown Votage -30 V V GS = 0V, I = -250µ V (BR)SS / T J Breakdown Votage Temp. Coefficient -0.09 V/ C Reference to 25 C, I = -m R S(on) Static rain-to-source On-Resistance 0.05 0.020 V GS = -0V, I = -8.0 Ω 0.026 0.035 V GS = -4.5V, I = -5.0 V GS(th) Gate Threshod Votage -.0 V V S = V GS, I = -250µ g fs Forward Transconductance S V S = -5V, I = -8.0 I SS rain-to-source Leakage Current -0 V S = -24V, V GS = 0V µ -0 V S = -5V, V GS = 0V, T J = 70 C I GSS Gate-to-Source Forward Leakage -00 V GS = -20V n Gate-to-Source Reverse Leakage 00 V GS = 20V Q g Tota Gate Charge 40 60 I = -4.6 Q gs Gate-to-Source Charge 7. nc V S = -5V Q gd Gate-to-rain ("Mier") Charge 8.0 V GS = -0V t d(on) Turn-On eay Time 6 24 V = -5V, V GS = -0V t r Rise Time 76 0 I = -.0 ns t d(off) Turn-Off eay Time 30 200 R G = 6.0Ω t f Fa Time 90 40 R = 5Ω C iss Input Capacitance 2320 V GS = 0V C oss Output Capacitance 390 pf V S = -5V C rss Reverse Transfer Capacitance 270 ƒ =.0kHz Source-rain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions I S Continuous Source Current MOSFET symbo -2.5 (Body iode) showing the I SM Pused Source Current integra reverse G -50 (Body iode) p-n junction diode. S V S iode Forward Votage -.2 V T J = 25 C, I S = -2.5, V GS = 0V t rr Reverse Recovery Time 34 5 ns T J = 25 C, I F = -2.5 Q rr Reverse Recovery Charge 33 50 nc di/dt = -00/µs Notes: Repetitive rating; puse width imited by max. junction temperature. ƒ Surface mounted on FR-4 board, t 5sec. Puse width 300µs; duty cyce 2%. 2 www.irf.com
Si4435YPbF -I, rain-to-source Current () 000 00 0 VGS TOP -5V -0V -7.0V -5.5V -4.5V -4.0V -3.5V BOTTOM -2.7V -2.70V 20µs PULSE WITH 0. T J = 25 C 0. 0 00 -V S, rain-to-source Votage (V) -I, rain-to-source Current () 000 00 0 VGS TOP -5V -0V -7.0V -5.5V -4.5V -4.0V -3.5V BOTTOM-2.7V -2.70V 20µs PULSE WITH 0. T J = 50 C 0. 0 00 -V S, rain-to-source Votage (V) Fig. Typica Output Characteristics Fig 2. Typica Output Characteristics -I, rain-to-source Current () 00 0 T J = 25 C T J = 50 C V S= -5V 20µs PULSE WITH 2.0 3.0 4.0 5.0 6.0 -V GS, Gate-to-Source Votage (V) R S(on), rain-to-source On Resistance (Normaized) 2.0 I = -8.0.5.0 0.5 V GS = -0V 0.0-60 -40-20 0 20 40 60 80 00 20 40 60 T J, Junction Temperature ( C) Fig 3. Typica Transfer Characteristics Fig 4. Normaized On-Resistance Vs. Temperature www.irf.com 3
Si4435YPbF C, Capacitance (pf) 3500 VGS = 0V, f = MHz Ciss = Cgs + Cgd, C ds SHORTE 3000 Crss = Cgd Coss = Cds + Cgd 2500 C iss 2000 500 000 500 C oss C rss 0 0 00 -V S, rain-to-source Votage (V) -V GS, Gate-to-Source Votage (V) 20 6 2 8 4 I = -4.6 V S =-5V 0 0 0 20 30 40 50 60 Q G, Tota Gate Charge (nc) Fig 5. Typica Capacitance Vs. rain-to-source Votage Fig 6. Typica Gate Charge Vs. Gate-to-Source Votage -I S, Reverse rain Current () 00 0 T J = 50 C T J = 25 C V GS = 0 V 0. 0.4 0.6 0.8.0.2.4 -V S,Source-to-rain Votage (V) -I I, rain Current () 000 00 0 OPERTION IN THIS RE LIMITE BY R S(on) 00us ms 0ms T = 25 C TJ = 50 C Singe Puse 0. 0 00 -V S, rain-to-source Votage (V) Fig 7. Typica Source-rain iode Forward Votage Fig 8. Maximum Safe Operating rea 4 www.irf.com
-V GS(th), Variace ( V ) Si4435YPbF 8.0 0.20 0.0 -I, rain Current () 6.0 4.0 2.0 0.00-0.0-0.20-0.30 Id = -250µ 0.0 25 50 75 00 25 50 T C, Case Temperature ( C) -0.40-50 -25 0 25 50 75 00 25 50 T J, Temperature ( C ) Fig 9. Maximum rain Current Vs. Case Temperature Fig 0. Typica Vgs(th) Variance Vs. Juction Temperature 00 Therma Response (Z thj ) 0 = 0.50 0.20 0.0 0.05 0.02 0.0 t 0. t2 SINGLE PULSE (THERML RESPONSE) Notes:. uty factor = t / t 2 2. Peak T J= P M x Z thj + T 0.0 0.0000 0.000 0.00 0.0 0. 0 00 t, Rectanguar Puse uration (sec) PM Fig. Maximum Effective Transient Therma Impedance, Junction-to-mbient www.irf.com 5
R S ( on), rain-to-source On Resistance ( Ω ) Si4435YPbF 0.0 0.0 R S(on), rain-to -Source Votage ( Ω ) 0.08 0.08 0.06 0.06 VGS= - 4.5V 0.04 Id = -8.0 0.04 0.02 0.02 VGS = -0V 0.00 2 4 6 8 0 2 4 6 0.00 0 0 20 30 40 -V GS, Gate -to -Source Votage ( V ) -I, rain Current ( ) Fig 2. Typica On-Resistance Vs. Gate Votage Fig 3. Typica On-Resistance Vs. rain Current 6 www.irf.com
Si4435YPbF SO-8 Package Outine imensions are shown in miimeters (inches) E 6 6X 8 7 2 e 5 6 5 3 4 B H 0.25 [.00] IM INCHES MILLIMET ERS MIN MX MIN MX.0532.0040.0688.0098.35 0.0.75 0.25 b.03.020 0.33 0.5 c.0075.0098 0.9 0.25 E e e H K L y.89.968.497.574.050 BSIC.27 BSIC.025 BSIC 0.635 BSIC.2284.2440.0099.096.06.050 0 8 4.80 5.00 3.80 4.00 5.80 6.20 0.25 0.50 0.40.27 0 8 e C y K x 45 SO-8 Part Marking 8X b 0.25 [.00] C B 0.0 [.004] NOT ES :. IMENSIONING & TOLERNCING PER SME Y4.5M-994. 2. CONTROLLING IMENSION: MILLIMETER 3. IMENSIONS RE SHOWN IN MILLIMETERS [INCHES]. 4. OUTLINE CONFORMS TO JEEC OUTLINE MS -02. 5 IMENSION OES NOT INCLUE MOL PROTRUSIONS. MOL PROTRUSIONS NOT TO EXCEE 0.5 [.006]. 6 IMENSION OES NOT INCLUE MOL PROTRUSIONS. MOL PROTRUSIONS NOT TO EXCEE 0.25 [.00]. 7 IMENSION IS THE LENGTH OF LE FOR SOLERING TO SUBST RT E. 8X L 7 6.46 [.255] 3X.27 [.050] 8X c F OOT PRINT 8X 0.72 [.028] 8X.78 [.070] EXMPLE: THIS IS N IRF70 (MOSFET) INTERNTIONL RECTIFIER LOGO XXXX F70 T E COE (YWW) P = E S IGNT E S L E -F RE E PROUCT (OPTIONL) Y = LST IGIT OF THE YER WW = WEEK = SSEMBLY SITE COE LOT COE PRT NUMBER www.irf.com 7
Si4435YPbF SO-8 Tape and Ree imensions are shown in miimeters (inches) TERMINL NUMBER 2.3 (.484 ).7 (.46 ) 8. (.38 ) 7.9 (.32 ) FEE IRECTION NOTES:. CONTROLLING IMENSION : MILLIMETER. 2. LL IMENSIONS RE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EI-48 & EI-54. 330.00 (2.992) MX. NOTES :. CONTROLLING IMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EI-48 & EI-54. 4.40 (.566 ) 2.40 (.488 ) ata and specifications subject to change without notice. This product has been designed and quaified for the Consumer market. Quaifications Standards can be found on IR s Web site. IR WORL HEQURTERS: 233 Kansas St., E Segundo, Caifornia 90245, US Te: (30) 252-705 TC Fax: (30) 252-7903 Visit us at www.irf.com for saes contact information.09/04 8 www.irf.com