P - 91853C Si44Y HEXFET Power MOSFET N-Channe MOSFET Low On-Resistance Low Gate Charge Surface Mount Logic Leve rive S S S G 1 8 2 7 3 6 4 5 V SS = 30V R S(on) = 0.0135Ω escription This N-channe HEXFET Power MOSFET is produced using Internationa Rectifier's advanced HEXFET power MOSFET technoogy. The ow on-resistance and ow gate charge inherent to this technoogy make this device idea for ow votage or battery driven power conversion appications Top View The SO-8 package with copper eadframe offers enhanced therma characteristics that aow power dissipation of greater that 800mW in typica board mount appications. SO-8 bsoute Maximum Ratings Parameter Max. Units V S rain- Source Votage 30 V I @ T = 25 C Continuous rain Current, V GS @ V ± I @ T = 70 C Continuous rain Current, V GS @ V ±8.0 I M Pused rain Current ±50 P @T = 25 C Power issipation ƒ 2.5 P @T = 70 C Power issipation ƒ 1.6 W Linear erating Factor 0.02 W/ C dv/dt Peak iode Recovery dv/dt 5.0 V/ns E S Singe Puse vaanche Energy 400 mj V GS Gate-to-Source Votage ± 20 V T J, T STG Junction and Storage Temperature Range -55 to + 150 C Therma Resistance Parameter Max. Units R θj Maximum Junction-to-mbientƒ 50 C/W www.irf.com 1 11/22/99
Eectrica Characteristics @ T J = 25 C (uness otherwise specified) Parameter Min. Typ. Max. Units Conditions V (BR)SS rain-to-source Breakdown Votage 30 V V GS = 0V, I = 250µ V (BR)SS/ T J Breakdown Votage Temp. Coefficient 0.029 V/ C Reference to 25 C, I = 1m R S(on) Static rain-to-source On-Resistance 0.0.0135 V GS = V, I = Ω 0.015 0.020 V GS = 4.5V, I = 5.0 V GS(th) Gate Threshod Votage 1.0 V V S = V GS, I = 250µ g fs Forward Transconductance 35 S V S = 15V, I = I SS rain-to-source Leakage Current 1.0 V S = 30V, V GS = 0V µ 25 V S = 30V, V GS = 0V, T J = 55 C I GSS Gate-to-Source Forward Leakage - V GS = -20V n Gate-to-Source Reverse Leakage V GS = 20V Q g Tota Gate Charge 30 45 I = Q gs Gate-to-Source Charge 5.4 nc V S = 15V Q gd Gate-to-rain ("Mier") Charge 6.5 V GS = V, See Fig. t d(on) Turn-On eay Time 11 V = 25V t r Rise Time 7.7 I = 1.0 ns t d(off) Turn-Off eay Time 38 R G = 6.0Ω t f Fa Time 44 R = 25Ω, C iss Input Capacitance 1585 V GS = 0V C oss Output Capacitance 739 pf V S = 15V C rss Reverse Transfer Capacitance 6 ƒ = 1.0MHz, See Fig. 9 Source-rain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions I S Continuous Source Current MOSFET symbo 2.3 (iode Conduction)ƒ showing the I SM Pused Source Current integra reverse G 50 (Body iode) p-n junction diode. V S iode Forward Votage 0.7 1.1 V T J = 25 C, I S = 2.3, V GS = 0V t rr Reverse Recovery Time 50 80 ns T J = 25 C, I F = 2.3 S Notes: Repetitive rating; puse width imited by max. junction temperature. Puse width 300µs; duty cyce 2%. ƒ When mounted on FR4 Board, t sec Starting T J = 25 C, L = 8.0mH R G = 25Ω, I S =. (See Figure 15) I S 2.3, di/dt 130/µs, V V (BR)SS, T J 150 C 2 www.irf.com
I, rain-to-source Current () 0 VGS TOP 15V V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V 4.5V I, rain-to-source Current () 0 VGS TOP 15V V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V 4.5V 20µs PULSE WITH T J = 25 C 0.1 1 V S, rain-to-source Votage (V) 20µs PULSE WITH T J = 150 C 0.1 1 V S, rain-to-source Votage (V) Fig 1. Typica Output Characteristics Fig 2. Typica Output Characteristics I, rain-to-source C urrent () 0 T J = -55 C T = 25 C J T J = 150 C V S = 25V 20µs PULSE W ITH 4 8 12 16 V GS, Gate-to-Source Votage (V) R S(on), rain-to-source On Resistance (Normaized) 2.0 I = 11 1.5 1.0 0.5 V GS = V 0.0-60 -40-20 0 20 40 60 80 120 140 160 T J, Junction Temperature ( C) Fig 3. Typica Transfer Characteristics Fig 4. Normaized On-Resistance Vs. Temperature www.irf.com 3
C, Capacitance (pf) 2400 2000 1600 1200 800 400 VGS = 0V, f = 1MHz Ciss = Cgs + Cgd, C ds Crss = Cgd Coss = Cds + Cgd C iss C oss SHORTE V GS, Gate-to-Source Votage (V) 20 16 12 8 4 I = V S = 24V V S = 15V C rss 0 1 V S, rain-to-source Votage (V) 0 0 20 30 40 50 Q G, Tota Gate Charge (nc) Fig 5. Typica Capacitance Vs. rain-to-source Votage Fig 6. Typica Gate Charge Vs. Gate-to-Source Votage 0 OPERTION IN THIS RE LIMITE BY R S(on) I S, Reverse rain Current () 1 T J = 150 C T J = 25 C V GS = 0 V 0.1 0.4 0.5 0.6 0.7 0.8 0.9 1.0 V S,Source-to-rain Votage (V) I, rain Current () us us 1ms TC = 25 C TJ = 150 C Singe Puse ms 1 0.1 1 0 V S, rain-to-source Votage (V) Fig 7. Typica Source-rain iode Forward Votage Fig 8. Maximum Safe Operating rea 4 www.irf.com
.0 8.0 80 I, rain Current () 6.0 4.0 Power ( W) 60 40 2.0 20 0.0 25 50 75 125 150 T C, Case Temperature ( C) 0 0.01 0.1 1 Time (sec) Fig 9. Maximum rain Current Vs. Case Temperature Fig. Typica Power Vs. Time Therma Response (Z thj ) 1 = 0.50 0.20 0. 0.05 0.02 0.01 t1 0.1 SINGLE PULSE t2 (THERML RESPONSE) Notes: 1. uty factor = t 1 / t 2 2. Peak T J = P M x Z thj + T 0.01 0.00001 0.0001 0.001 0.01 0.1 1 t 1, Rectanguar Puse uration (sec) PM Fig 11. Typica Effective Transient Therma Impedance, Junction-to-mbient www.irf.com 5
R S(on), rain-to-source On Resistance (Ω) 0.20 0.16 0.12 0.08 0.04 V GS = V V = 4.5V GS 0.00 0 20 30 40 50 R S(on), rain-to-source On Resistance (Ω) 0.03 0.02 I = 0.01 0.00 3 4 5 6 7 8 9 I, rain Current () V GS, G ate-to-source Votage (V) Fig 12. Typica On-Resistance Vs. rain Current Fig 13. Typica On-Resistance Vs. Gate Votage V, Variance ( V) GS(th) 3.0 2.5 2.0 I =250µ 1.5-60 -40-20 0 20 40 60 80 120 140 160 T J, Junction Temperature ( C) E S, Singe Puse vaanche Energy (mj) 0 800 600 400 200 TOP BOTTOM I 4.5 8.0 0 25 50 75 125 150 Starting T, Junction Temperature ( J C) Fig 14. Typica Threshod Votage Vs.Temperature Fig 15. Maximum vaanche Energy Vs. rain Current 6 www.irf.com
SO-8 Package Outine 5 E - - - B - 5 8 7 6 5 1 2 3 4 H 0.25 (.0) M M e 6X e1 K x 45 θ - C - 0. (.004) L 6 B 8X 1 8X 0.25 (.0) M C S B S NOTES: 1. IMENSIONING N TOLERNCING PER NSI Y14.5M-1982. 2. CONTROLLING IMENSION : INCH. 3. IMENSIONS RE SHOWN IN MILLIMETERS (INCHES). 4. OUTLINE CONFORMS TO JEEC OUTLINE MS-012. 5 IMENSION OES NOT INCLUE MOL PROTRUSIONS MOL PROTRUSIONS NOT TO EXCEE 0.25 (.006). 6 IMENSIONS IS THE LENGTH OF LE FOR SOLERING TO SUBSTRTE.. C 8X IM INCHES MILLIMETERS MIN MX MIN MX.0532.0688 1.35 1.75 1.0040.0098 0. 0.25 B.014.018 0.36 0.46 C.0075.0098 0.19 0.25.189.196 4.80 4.98 E.150.157 3.81 3.99 e.050 BSIC 1.27 BSIC e1.025 BSIC 0.635 BSIC H.2284.2440 5.80 6.20 K.011.019 0.28 0.48 L 0.16.050 0.41 1.27 θ 0 8 0 8 RECOMMENE FOOTPRINT 0.72 (.028 ) 8X 6.46 (.255 ) 1.27 (.050 ) 3X 1.78 (.070) 8X SO-8 Part Marking Information www.irf.com 7
SO-8 Tape & Ree Information imensions are shown in miimeters (inches) TERMINL NUMBER 1 12.3 (.484 ) 11.7 (.461 ) 8.1 (.318 ) 7.9 (.312 ) FEE IRECTION NOTES: 1. CONTROLLING IMENSION : MILLIMETER. 2. LL IMENSIONS RE SHOW N IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EI-481 & EI-541. 330.00 (12.992) MX. 14.40 (.566 ) 12.40 (.488 ) NOTES : 1. CONTROLLING IMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EI-481 & EI-541. WORL HEQURTERS: 233 Kansas St., E Segundo, Caifornia 90245, Te: (3) 322 3331 IR GRET BRITIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Te: ++ 44 1883 732020 IR CN: 15 Lincon Court, Brampton, Ontario L6T3Z2, Te: (905) 453 2200 IR GERMNY: Saaburgstrasse 157, 61350 Bad Homburg Te: ++ 49 6172 96590 IR ITLY: Via Liguria 49, 71 Borgaro, Torino Te: ++ 39 11 451 0111 IR JPN: K&H Bdg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Te: 81 3 3983 0086 IR SOUTHEST SI: 1 Kim Seng Promenade, Great Word City West Tower, 13-11, Singapore 237994 Te: ++ 65 838 4630 IR TIWN:16 F. Suite. 207, Sec. 2, Tun Haw South Road, Taipei, 673, Taiwan Te: 886-2-2377-9936 ata and specifications subject to change without notice. 11/99 8 www.irf.com