3V Dual Asymmetric N-Channel AlphaMOS General Description Latest Trench Power AlphaMOS (αmos LV) technology Very Low RDS(on) at 4.V GS Low Gate Charge High Current Capability RoHS and Halogen-Free Compliant Product Summary Q Q2 V DS 3V 3V I D (at V GS =V) 6A 8A R DS(ON) (at V GS =V) <.2mΩ <7.7mΩ R DS(ON) (at V GS = 4.V) <.8mΩ <.6mΩ % UIS Tested Application % Rg Tested DC/DC Converters in Computing, Servers, and POL Isolated DC/DC Converters in Telecom and Industrial Top View Power DFN3x3A Bottom View Top View Bottom View S2 G2 S2 S2 (S/D2) D D D D G Absolute Maximum Ratings T A =2 C unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage V DS Spike Power Dissipation B Power Dissipation A ns T C =2 C Symbol V DS Continuous Drain T A =2 C 3 I DSM Current T A =7 C 7.8 9 V GS I DM I AS E AS V SPIKE P D P DSM Junction and Storage Temperature Range T J, T STG - to C ±2 Continuous Drain T C =2 C 6 I Current G D T C = C 2 Pulsed Drain Current C 64 Avalanche Current C Avalanche Energy L=.mH C 9 6 mj T C = C T A =2 C T A =7 C Max Q 9 3 Max Q2 ±2 8 72 2 36 36 23 9 2. 4 2 2..9.9 Units V V A A A V W W Thermal Characteristics Parameter Symbol Typ Q Max Q Typ Q2 Max Q2 Maximum Junction-to-Ambient A t s 4 4 R Maximum Junction-to-Ambient A D θja Steady-State 7 9 7 9 Maximum Junction-to-Case Steady-State R θjc 4..4 4.2 Units C/W C/W C/W Rev : April 22 www.aosmd.com Page of
Q Electrical Characteristics (T J =2 C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BV DSS Drain-Source Breakdown Voltage I D =2µA, V GS =V 3 V V DS =3V, V GS =V I DSS Zero Gate Voltage Drain Current µa T J = C I GSS Gate-Body leakage current V DS =V, V GS = ±2V na V GS(th) Gate Threshold Voltage V DS =V GS I D =2µA.2.8 2.2 V R DS(ON) Static Drain-Source On-Resistance V GS =V, I D =3A V GS =4.V, I D =A 8.3.2 T J =2 C.2 3.7 2.4.8 mω g FS Forward Transconductance V DS =V, I D =3A S V SD Diode Forward Voltage I S =A,V GS =V.7 V I S Maximum Body-Diode Continuous Current G 6 A DYNAMIC PARAMETERS C iss Input Capacitance 48 pf C oss Output Capacitance V GS =V, V DS =V, f=mhz 23 pf C rss Reverse Transfer Capacitance 32 pf R g Gate resistance V GS =V, V DS =V, f=mhz.9.8 2.7 Ω SWITCHING PARAMETERS Q g (V) Total Gate Charge 8 nc Q g (4.V) Total Gate Charge 3.9.3 nc V GS =V, V DS =V, I D =3A Q gs Gate Source Charge. nc Q gd Gate Drain Charge 2. nc t D(on) Turn-On DelayTime 3. ns t r Turn-On Rise Time V GS =V, V DS =V, R L =.2Ω, 2.8 ns t D(off) Turn-Off DelayTime R GEN =3ΩΩ 6.3 ns t f Turn-Off Fall Time 3 ns t rr Body Diode Reverse Recovery Time I F =3A, di/dt=a/µs 9.9 ns Q rr Body Diode Reverse Recovery Charge I F =3A, di/dt=a/µs 2.9 nc A. The value of R θja is measured with the device mounted on in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =2 C. The Power dissipation P DSM is based on R θja t s value and the maximum allowed junction temperature of C. The value in any given application depends on the user's specific board design. B. The power dissipation P D is based on T J(MAX) = C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature T J(MAX) = C. Ratings are based on low frequency and duty cycles to keep initial T J =2 C. D. The R θja is the sum of the thermal impedence from junction to case R θjc and case to ambient. E. The static characteristics in Figures to 6 are obtained using <3µs pulses, duty cycle.% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of T J(MAX) = C. The SOA curve provides a single pulse rating. G. The maximum current rating is limited by package. H. These tests are performed with the device mounted on in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=2 C. mω COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev : April 22 www.aosmd.com Page 2 of
Q-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS I D (A) 8 6 4 2 V 6V 8V 4.V 4V 3.V V GS =3V ID(A) 6 4 3 2 V DS =V 2 C 2 C 2 3 4 Fig : On-Region Characteristics (Note E) 2 3 4 Figure 2: Transfer Characteristics (Note E) R DS(ON) (mω) 2 V GS =4.V V GS =V Normalized On-Resistance.6.4.2 V GS =V I D =3A V GS =4.V I D =A 2 4 6 8 2 4 I D (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E).8 2 7 2 7 Temperature ( C) Figure 4: On-Resistance vs. Junction Temperature (Note E) 2.E+2 R DS(ON) (mω) 2 2 C I D =3A 2 C I S (A).E+ 4.E+.E-.E-2.E-3.E-4 2 C 2 C 2 4 6 8 Figure : On-Resistance vs. Gate-Source Voltage (Note E).E-..2.4.6.8..2.4 V SD (Volts) Figure 6: Body-Diode Characteristics (Note E) Rev : April 22 www.aosmd.com Page 3 of
Q-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 8 6 4 2 V DS =V I D =3A Capacitance (pf) 7 6 4 3 2 C rss C iss C oss 2 4 6 8 Q g (nc) Figure 7: Gate-Charge Characteristics 2 2 3 Figure 8: Capacitance Characteristics. 2 I D (Amps)... R DS(ON) limited DC µs us ms Power (W) 6 2 8 T J(Max) = C T C =2 C. T J(Max) = C T C =2 C 4... Figure 9: Maximum Forward Biased Safe Operating Area (Note F).... Figure : Single Pulse Power Rating Junction-to- Case (Note F) Z θjc Normalized Transient Thermal Resistance.. D=T on /T T J,PK =T C +P DM.Z θjc.r θjc R θjc =.4 C/W Single Pulse In descending order D=.,.3,.,.,.2,., single pulse..... Figure : Normalized Maximum Transient Thermal Impedance (Note F) P D T on T Rev : April 22 www.aosmd.com Page 4 of
Q-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 3 4 Power Dissipation (W) 2 2 Current rating ID(A) 3 2 2 7 2 T CASE ( C) Figure 2: Power De-rating (Note F) 2 7 2 T CASE ( C) Figure 3: Current De-rating (Note F) T A =2 C Power (W)... Figure 4: Single Pulse Power Rating Junction-to-Ambient (Note H) Z θja Normalized Transient Thermal Resistance... D=T on /T T J,PK =T A +P DM.Z θja.r θja R θja =9 C/W Single Pulse In descending order D=.,.3,.,.,.2,., single pulse..... Figure : Normalized Maximum Transient Thermal Impedance (Note H) 4 P D T on T Rev : April 22 www.aosmd.com Page of
Q2 Electrical Characteristics (T J =2 C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BV DSS Drain-Source Breakdown Voltage I D =2µA, V GS =V 3 V I DSS V DS =3V, V GS =V Zero Gate Voltage Drain Current µa T J = C I GSS Gate-Body leakage current V DS =V, V GS = ±2V na V GS(th) Gate Threshold Voltage V DS =V GS I D =2µA.2.8 2.2 V R DS(ON) Static Drain-Source On-Resistance V GS =V, I D =A V GS =4.V, I D =A 6.3 7.7 T J =2 C 8.4.3 9..6 mω g FS Forward Transconductance V DS =V, I D =A S V SD Diode Forward Voltage I S =A,V GS =V.7 V I S Maximum Body-Diode Continuous Current G 8 A DYNAMIC PARAMETERS C iss Input Capacitance 87 pf C oss Output Capacitance V GS =V, V DS =V, f=mhz 34 pf C rss Reverse Transfer Capacitance 4 pf R g Gate resistance V GS =V, V DS =V, f=mhz.6.3 2 Ω SWITCHING PARAMETERS Q g (V) Total Gate Charge 2.9 7. nc Q g (4.V) Total Gate Charge 6 8. nc V GS =V, V DS =V, I D =A Q gs Gate Source Charge 2. nc Q gd Gate Drain Charge 3 nc t D(on) Turn-On DelayTime 4.8 ns t r Turn-On Rise Time V GS =V, V DS =V, R L =Ω, 3.3 ns t D(off) Turn-Off DelayTime R GEN =3ΩΩ 8.8 ns t f Turn-Off Fall Time 3.3 ns t rr Body Diode Reverse Recovery Time I F =A, di/dt=a/µs.3 ns Q rr Body Diode Reverse Recovery Charge I F =A, di/dt=a/µs nc A. The value of R θja is measured with the device mounted on in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =2 C. The Power dissipation P DSM is based on R θja t s value and the maximum allowed junction temperature of C. The value in any given application depends on the user's specific board design. B. The power dissipation P D is based on T J(MAX) = C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature T J(MAX) = C. Ratings are based on low frequency and duty cycles to keep initial T J =2 C. D. The R θja is the sum of the thermal impedence from junction to case R θjc and case to ambient. E. The static characteristics in Figures to 6 are obtained using <3µs pulses, duty cycle.% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of T J(MAX) = C. The SOA curve provides a single pulse rating. G. These tests are performed with the device mounted on in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =2 C. mω COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev : April 22 www.aosmd.com Page 6 of
Q2-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 8 V 8V V 4.V 6 V DS =V I D (A) 6 4 4V ID(A) 4 3 2 2 C 2 C 2 =3V 2 3 4 Fig : On-Region Characteristics (Note E) 2 3 4 Figure 2: Transfer Characteristics (Note E) R DS(ON) (mω) 9 8 7 6 V GS =4.V V GS =V Normalized On-Resistance.6.4.2 V GS =V I D =A 7 V GS =4.V 2 I D =A 4 3 6 9 2 I D (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E).8 2 7 2 7 Temperature ( C) Figure 4: On-Resistance vs. Junction 8Temperature (Note E) 2 I D =A.E+2.E+ 4 2 C R DS(ON) (mω) 2 C I S (A).E+.E- 2 C 2 C.E-2 2 4 6 8 Figure : On-Resistance vs. Gate-Source Voltage (Note E).E-3..2.4.6.8..2 V SD (Volts) Figure 6: Body-Diode Characteristics (Note E) Rev : April 22 www.aosmd.com Page 7 of
Q2-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 8 V DS =V I D =A 2 C iss 6 4 Capacitance (pf) 8 6 4 C oss 2 2 C rss 3 6 9 2 Q g (nc) Figure 7: Gate-Charge Characteristics 2 2 3 Figure 8: Capacitance Characteristics I D (Amps).... R DS(ON) limited DC µs µs ms Power (W) 2 6 2 8 T J(Max) = C T C =2 C. T J(Max) = C T C =2 C 4... Figure 9: Maximum Forward Biased Safe Operating Area (Note F).... Figure : Single Pulse Power Rating Junction-to- Case (Note F) Z θjc Normalized Transient Thermal Resistance. D=T on /T T J,PK =T C +P DM.Z θjc.r θjc R θjc = C/W Single Pulse In descending order D=.,.3,.,.,.2,., single pulse 4 P D T on T...... Figure : Normalized Maximum Transient Thermal Impedance (Note F) Rev : April 22 www.aosmd.com Page 8 of
Q2-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS Power Dissipation (W) 3 2 2 Current rating I D (A) 4 3 2 2 7 2 T CASE ( C) Figure 2: Power De-rating (Note F) 2 7 2 T CASE ( C) Figure 3: Current De-rating (Note F) Power (W) T A =2 C... Figure 4: Single Pulse Power Rating Junction-to-Ambient (Note G) Z θja Normalized Transient Thermal Resistance... D=T on /T T J,PK =T A +P DM.Z θja.r θja R θja =9 C/W Single Pulse In descending order D=.,.3,.,.,.2,., single pulse.... Figure : Normalized Maximum Transient Thermal Impedance (Note G) 4 P D T on T Rev : April 22 www.aosmd.com Page 9 of
Gate Charge Test Circuit & Waveform Qg VDC + - DUT VDC + - V Qgs Qgd Ig RL Resistive Switching Test Circuit & Waveforms Charge Rg DUT VDC + - Vdd 9% % td(on) t r t d(off) t f t on t off Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 E = /2 LI AR AR BV DSS Id Rg VDC + - Vdd Id I AR DUT Diode Recovery Test Circuit & Waveforms + DUT Q = - Idt rr - Ig Isd L VDC + - Vdd Isd I F di/dt I RM t rr Vdd Rev : April 22 www.aosmd.com Page of