5SDF 13H455 5SDF 13H455 Fast Recovery Diode Properties Key Parameters Optimized soft recovery characteristics VRRM = 4 5 V Enhanced Safe Operating Area IFAVm = 1 393 A Industry standard housing IFSM = 23 A Cosmic radiation withstand rating VTO = 2.429 V Applications rt =.645 m suited for IGCT or GTO applications Snubber and clamp diode Freewheeling diode Types 5SDF 13H455 Conditions: Mechanical Data V RRM 4 5 V T j = -4 14 C, half sine waveform, f = 5 Hz F m Mounting force 4 ± 5 kn m Weight.9 kg D S D a Surface creepage distance Air strike distance 4 mm 2 mm ABB s.r.o. Novodvorska 1768/138a, 142 21 Praha 4, Czech Republic tel.: +42 261 36 25, http://www.abb.com/semiconductors Fig. 1 Case TS - DC/33/14 Sep-14 1 of 12
5SDF 13H455 Maximum Ratings Maximum Limits Unit V RRM V DC link I FAVm I FRMS I RRM Repetitive peak reverse voltage T j = -4 14 C Permanent DC voltage for 1 FIT failure rate Ambient cosmic radiation at sea level in open air Average forward current T c = 85 C RMS forward current T c = 85 C Repetitive reverse current V R = V RRM 4 5 V 2 8 V 1 393 A 2 188 A 1 ma I FSM I 2 t Non repetitive peak surge current V R = V, half sine pulse Limiting load integral V R = V, half sine pulse t p = 8.3 ms 24 6 A t p = 1 ms 23 A t p = 8.3 ms 2 55 A 2 s t p = 1 ms 2 645 A 2 s P rrm Reverse recovery maximum power 8. MW T jmin -T jmax Operating temperature range -4 14 C T STG Storage temperature range -4 14 C Unless otherwise specified T j = 14 C TS - DC/33/14 Sep-14 2 of 12
5SDF 13H455 Forward characteristics Value Unit min typ max V T Threshold voltage 2.429 V r T Forward slope resistance I F1 = 2 42 A, I F2 = 6 126 A.645 m V FM Maximum forward voltage I FM = 2 A Unless otherwise specified T j = 14 C 3.71 V Forward recovery characteristics Value Unit min typ max V fr Forward recovery voltage di F/dt = 65 A/µs di F/dt = 1 A/µs Unless otherwise specified T j = 14 C 75 13 V Reverse recovery characteristics Value Unit min typ max P rrm Reverse recovery maximum power I FM = 2 5 A, V R = 2 8 V di F/dt = -1 A/µs di F/dt = -65 A/µs 5.5 4.7 MW clamp circuit: L CL.35 µh, C CL = 4 µf Q rr Recovered charge the same conditions as at P rrm di F/dt = -1 A/µs di F/dt = -65 A/µs 3 5 2 69 µc I rrm Reverse recovery maximum current the same conditions as at P rrm di F/dt = -1 A/µs di F/dt = -65 A/µs 1 5 1 17 A W rr Reverse recovery energy the same conditions as at P rrm di F/dt = -1 A/µs di F/dt = -65 A/µs 7. 5.8 J Unless otherwise specified T j = 14 C TS - DC/33/14 Sep-14 3 of 12
Transient thermal impedance junction to case Z thjc ( K/kW ) 5SDF 13H455 Thermal Parameters Value Unit R thjc R thch Thermal resistance junction to case Thermal resistance case to heatsink double side cooling 7.5 K/kW anode side cooling 12. cathode side cooling 2. double side cooling 2.2 K/kW single side cooling 4.4 Transient Thermal Impedance Analytical function for transient thermal impedance Z thjc 4 i 1 R (1 exp( t / )) Conditions: F m = 4 ± 5 kn, Double side cooled i i i 1 2 3 4 i ( s ).73.14.5.2 Ri( K/kW ) 4.2 2.3.8.2 8 7 6 5 Correction for periodic waveforms 18 sine: 1. K/kW 12 sine: 1.5 K/kW 6 sine: 2.5 K/kW 18 rectangular:.9 K/kW 12 rectangular: 1.5 K/kW 6 rectangular: 2.5 K/kW Fig. 2 4 3 2 1.1.1.1 1 1 Square wave pulse duration t d ( s ) Dependence transient thermal impedance junction to case on square pulse TS - DC/33/14 Sep-14 4 of 12
5SDF 13H455 Forward Characteristics IF ( A ) 6 T j = 14 C 5 4 3 2 1 2 4 6 8 V F ( V ) Fig. 3 Maximum forward voltage drop characteristics TS - DC/33/14 Sep-14 5 of 12
I FSM ( ka ) i 2 dt (1 6 A 2 s) I FSM ( ka ) 5SDF 13H455 Surge Characteristics 5 5 25 4 4 2 i 2 dt 3 3 15 2 2 1 V R = V I FSM 1 1 5 V R.5 V RRM 1 1 t ( ms ) 1 1 1 1 Number n of cycles at 5 Hz Fig. 4 Surge forward current vs. pulse length, half sine wave, single pulse, Fig. 5 Surge forward current vs. number of pulses, half sine wave, T j = T jmax V R = V, T j = T jmax TS - DC/33/14 Sep-14 6 of 12
T C ( C ) T C ( C ) P T ( W ) P T ( W ) 5SDF 13H455 Power Loss and Maximum Case Temperature Characteristics 6 y = 6 12 18 DC 6 y = 3 6 9 12 18 27 DC 5 5 4 4 3 3 2 2 1 1 4 8 12 16 I FAV ( A ) 4 8 12 16 I FAV ( A ) Fig. 6 Forward power loss vs. average forward current, sine waveform, f = 5 Hz, T = 1/f Fig. 7 Forward power loss vs. average forward current, square waveform, f = 5 Hz, T = 1/f 14 14 13 13 12 12 11 11 1 DC 1 DC 9 9 27 8 8 7 y = 6 12 18 4 8 12 16 I FAV ( A ) 7 y = 3 6 9 12 18 4 8 12 16 I FAV ( A ) Fig. 8 Max. case temperature vs. aver. forward current, sine waveform, f = 5 Hz, T = 1/f Fig. 9 Max. case temperature vs. aver. forward current, square waveform, f = 5 Hz, T = 1/f Note 2: Figures number 6 9 have been calculated without considering any forward and reverse recovery losses. They are valid for f = 5 or 6 Hz operation. TS - DC/33/14 Sep-14 7 of 12
5SDF 13H455 Forward Recovery Characteristics 2 V fr ( V ) vf (t), if (t) di F /dt i F (t) 1 15 1 V fr 5 t fr v F (t) 1 3 t 2 4 6 8 1 di F /dt ( A/µs ) Fig. 1 Typical forward recovery voltage waveform when the diode is turned on with high di F/dt Fig. 11 Max. forward recovery voltage vs. rate of rise of forward current, trapezoid pulse, T j = T jmax, t fr 1 µs TS - DC/33/14 Sep-14 8 of 12
5SDF 13H455 Reverse Recovery Characteristics Q rr ( µc ) vf (t), if (t) I rrm ( A ) Q rr ( µc ) I FM i F (t) - di F /dt t rr 6 5 4 -di F /dt = 1 A/µs 65 A/µs I rrm 5 v F (t) Q rr t s t f.25 I rrm.9 I rrm 3 2 V R 1 V rrm -1 t -1 2 4 6 I FM ( A ) Fig. 12 Typical waveforms and definition of symbols at reverse recovery of a diode, inductive switching Fig. 13 Max. recovered charge vs. forward current,trapezoid pulse, T j = T jmax 6 16 I FM = 25 A 5 14 4 I FM = 25 A 12 1 1 A 3 8 2 1 A 6 4 1 2 2 4 6 8 1 - di T /dt ( A/µs ) 2 4 6 8 1 - di T /dt ( A/µs ) Fig. 14 Max. recovered charge vs. rate of fall of forward current, trapezoid pulse, T j = T jmax Fig. 15 Max. reverse recovery current vs. rate of fall of forward current, trapezoid pulse, T j = T jmax TS - DC/33/14 Sep-14 9 of 12
I FM ( A ) W rr ( J ) W rr ( J ) 5SDF 13H455 Reverse Recovery Characteristics 8 8 I FM = 25 A di F /dt = 1 A/µs 6 6 1 A 65 A/µs 4 4 2 2 2 4 6 8 1 - di F /dt ( A/µs ) 5 1 15 2 25 I FM ( A ) Fig. 16 Maximum reverse recovery energy per pulse vs. rate of fall of forward current, I FM = 1, 2 5 A, T j = T jmax Fig. 17 Maximum reverse recovery energy per pulse vs. forward current, -di F /dt = 65, 1 A/µs, T j = T jmax Safe Operating Area 6 5 4 3 2 1 1 2 3 4 V R ( V ) Fig. 18 Diode Safe Operating Area, T j = T jmax, di F/dt = - 1 A/µs TS - DC/33/14 Sep-14 1 of 12
I FAV ( A ) I FM ( A ) I FAV ( A ) I FM ( A ) 5SDF 13H455 Frequency Ratings 2 27 1 18 y = 3 8 15 12 9 6 6 1 6 9 y = 3 4 12 5 2 18 27 1 1 1 f ( Hz ) Fig. 19 Average on-state current vs. frequency, trapezoid waveform, T C = 7 C, di F/dt = 1 A/µs, V R = 2 8 V 1 1 1 f ( Hz ) Fig. 2 Maximum on-state current vs. frequency, trapezoid waveform, T C = 7 C, di F/dt = 1 A/µs, V R = 2 8 V 2 1 27 15 18 8 y = 3 1 12 9 6 y = 3 6 4 6 9 12 5 2 18 27 1 1 1 f ( Hz ) Fig. 21 Average on-state current vs. frequency, trapezoid waveform, T C = 85 C, di F/dt = 1 A/µs, V R = 2 8 V 1 1 1 f ( Hz ) Fig. 22 Maximum on-state current vs. frequency, trapezoid waveform, T C = 85 C, di F/dt = 1 A/µs, V R = 2 8 V TS - DC/33/14 Sep-14 11 of 12
5SDF 13H455 Notes: TS - DC/33/14 Sep-14 12 of 12