Si IGBT/ SiC SBD PIM Module Features: Short Circuit Rated 1μs Low Saturation Voltage: V CE (sat) = 1.9V @ I C =75A, T C =25 Low Switching Loss SiC SBD for boost diode: V F = 1.7V @ I F = 5A, T C =25 1% RBSOA Tested(2 Ic) Low Stray Inductance Lead Free, Compliant with RoHS Requirement Applicatio: Industrial Inverters Servo Applicatio IGBT, Inverter Maximum Rated Values (T C =25 unless otherwise specified) V CES Collector-Emitter Blocking Voltage 12 V V GES Gate-Emitter Voltage ±2 V I C Continuous Collector Current T C = 8 75 A T C = 25 15 A I CM(1) Peak Collector Current Repetitive T J = 175 15 A t SC Short Circuit Withstand Time >1 μs P D Maximum Power Dissipation per IGBT T C = 25 T Jmax =175 52 W Page 1 of 12 Rev..1 4/22/215
Electrical Characteristics of IGBT (T C =25 unless otherwise specified) Preliminary Data Sheet Static characteristics Description Conditio Min Typ Max Unit Symbol V GE(th) Gate-Emitter Threshold Voltage I C = 1 ma, V CE = V GE 5. 5.5 6. V V CE(sat) I CES I GES C ies Collector-Emitter Saturation Voltage Collector-Emitter Leakage Current Gate-Emitter Leakage Current I C =75A, V GE = 15V V GE = V, V CE = V CES, T J = 25 V GE = ±2V, V CE = V, T J = 25 T J = 25 1.9 2.1 V T J = 125 2.2 V 1 ma 2 na Input Capacitance V CE = 25V, V GE = V, 1.4 nf C res Output capacitance f =1MHz.56 nf Switching Characteristics t d(on) Turn-on Delay Time T J = 25 19 T J = 125 17 t r Rise Time T J = 25 1 T J = 125 11 t d(off) t f Turn-off Delay Time Fall Time V CC = 6V,I C = 75A, R G = 15Ω,V GE = ±15V, Inductive Load T J = 25 27 T J = 125 28 T J = 25 16 T J = 125 24 E on Turn-on Switching Loss T J = 25 5.77 T J = 125 6.9 mj E off Turn-off Switching Loss T J = 25 3.54 T J = 125 5.6 mj Q g Total Gate Charge T J = 25 19 nc RBSOA SCSOA Reverse Bias Safe Operation Area Short Circuit Safe Operation Area I C =15A,V CC =96V,Vp=12V, Rg = 15Ω, V GE =+15V to V, T J =15 C V CC = 6V, V GE = 15V, T J = 15 Trapezoid 1 μs R θjc IGBT Thermal Resistance: Junction-To-Case.29 /W Page 2 of 12 Rev..1 4/22/215
Diode, Inverter Maximum Rated Values (T C =25 unless otherwise specified) Preliminary Data Sheet V RRM Repetitive Peak Reverse Voltage 12 V I F Diode Continuous Forward Current 75 A I FM Repetitive Peak Forward Current 15 A Electrical Characteristics of FWD (T C =25 unless otherwise specified) Symbol Description Conditio Min Typ Max Unit V FM Forward Voltage I F = 75A, V GE = V T J = 25 1.9 T J = 125 2.1 V I rr Peak Reverse Recovery Current T J = 25 35 T J = 125 4 A Q rr Reverse Recovery Charge I F = 75A, di/dt =7A/μs, V rr = 6V, V GE = -15V T J = 25 5.7 T J = 125 9.52 µc E rec Reverse Recovery Energy T J = 25 1.92 T J = 125 3.8 mj R θjc Diode Thermal Resistance: Junction-To-Case.45 /W IGBT, Brake-Chopper Maximum Rated Values (T C =25 unless otherwise specified) V CES Collector-Emitter Blocking Voltage 12 V V GES Gate-Emitter Voltage ±2 V I C Continuous Collector Current T C = 8 5 A T C = 25 1 A I CM Peak Collector Current Repetitive T J = 175 1 A t SC Short Circuit Withstand Time >1 μs P D Maximum Power Dissipation (IGBT) T C = 25 T Jmax =175 39 W Page 3 of 12 Rev..1 4/22/215
Electrical Characteristics of IGBT (T C =25 unless otherwise specified) Static characteristics Symbol Preliminary Data Sheet Description Conditio Min Typ Max Unit V GE(th) Gate-Emitter Threshold Voltage I C = 1 ma, V CE = V GE 5. 5.5 6. V V CE(sat) I CES I GES C ies Collector-Emitter Saturation Voltage Collector-Emitter Leakage Current Gate-Emitter Leakage Current I C = 5 A, V GE = 15V V GE = V, V CE = V CES, T J = 25 V GE = ±2V, V CE = V, T J = 25 T J = 25 1.9 2.2 V T J = 125 2.2 V 1 ma 2 na Input Capacitance V CE = 25V, V GE = V, 6.7 nf C oes Output Capacitance f = 1MHz.38 nf Switching Characteristics t d(on) Turn-on Delay Time T J = 25 24 T J = 125 235 t r Rise Time T J = 25 75 T J = 125 75 t d(off) t f Turn-off Delay Time Fall Time V CC = 6V,I C = 5A, R G = 15 Ω,V GE = ±15V, Inductive Load T J = 25 235 T J = 125 25 T J = 25 165 T J = 125 28 E on Turn-on Switching Loss T J = 25 3.72 T J = 125 4.48 mj E off Turn-off Switching Loss T J = 25 2.25 T J = 125 3.54 mj Q g Total Gate Charge T J = 25 39 nc RBSOA SCSOA Reverse Bias Safe Operation Area Short Circuit Safe Operation Area I C =1A,V CC =96V,Vp=12V, Rg = 15Ω, V GE =+15V to V, T J =15 C V CC = 6V, V GE = 15V, T J = 15 Trapezoid 1 μs R θjc IGBT Thermal Resistance: Junction-To-Case.39 /W Page 4 of 12 Rev..1 4/22/215
Maximum Rated Values of SiC SBD Brake-Chopper (T C =25 unless otherwise specified) Symbol Description Conditio Value Unit V RRM Repetitive Peak Reverse Voltage T j =25 C 12 V I F Diode Continuous Forward Current T C =125 C, T j =175 C 51 A I F,SM Surge Non-repetitive Forward Current T C =125 C, t p =8.3 ms sine half wave 225 A dv/dt Diode dv/dt Ruggedness Turn-on slew rate, repetitive 5 V/ Electrical Characteristics of SiC SBD (T C =25 unless otherwise specified) Symbol Description Conditio Min Typ Max Unit V R DC Blocking Voltage I R =1 ua 12 V V F Forward Voltage I F = 5A, V GE = V T J = 25 1.7 1.9 T J = 175 2.3 2.7 V I R Reverse leakage Current V R =12V T J = 25 7 5 V R =12V T J = 175 26 1 µa Q C Total Capacitive Charge V R =12V T J = 25 194 nc V R =1V, f=1 MHz 2857 C Total Capacitance V R =6V, f=1 MHz 167 pf V R =12V, f=1 MHz 162 R θjc Diode Thermal Resistance: Junction-To-Case TBD /W Electrical Characteristics of FWD (T C =25 unless otherwise specified) Symbol Description Conditio Min Typ Max Unit V FM Forward Voltage I F = 25 A, V GE = V T J = 25 1.8 2.2 T J = 125 2. V I rr Peak Reverse Recovery Current T J = 25 15 T J = 125 2 A Q rr Reverse Recovery Charge I F =25A, di/dt =58A/μs, V rr = 6V, V GE = -15V T J = 25 1.5 T J = 125 2.19 µc E rec Reverse Recovery Energy T J = 25.39 T J = 125.95 mj R θjc Diode Thermal Resistance: Junction-To-Case.8 /W Page 5 of 12 Rev..1 4/22/215
Diode, Rectifier Maximum Rated Values (T C =25 unless otherwise specified) V RRM Repetitive Peak Reverse Voltage T J =25 18 V I FRMSM Maximum RMS Forward Current per Chip T J =8 8 A I RMSM Maximum RMS Current at Rectifier Output T J =8 12 A I FSM Surge Current @t p =1 ms T J =25 55 T J =15 45 A I 2 t I²t - value T J =25 17 T J =15 1 A 2 s Electrical Characteristics of Diode (T C =25 unless otherwise specified) Symbol Description Conditio Min Typ Max Unit V F Forward voltage I F = 75 A T J =25 1.15 T J =15 1.1 V I R Reverse current V R =12V T J =25 1 ma R θjc Junction-To-Case Diode.39 /W Internal NTC-Thermistor Characteristics Symbol Description Min Typ Max Unit R 25 T C =25 5 kω R/R T C =1,R 1 =481Ω ±5 % P 25 T C =25 5 mw B 25/5 R 2 =R 25 exp[b 25/5 (1/T 2-1/(298.15K))] 338 K B 25/8 R 2 =R 25 exp[b 25/8 (1/T 2-1/(298.15K))] 344 K Page 6 of 12 Rev..1 4/22/215
Module Symbol Description Min Typ Max Unit V iso Isolation Voltage(All Terminals Shorted) f = 5Hz, 1minute 25 V T J Maximum Junction Temperature 175 T JOP Maximum Operating Junction Temperature Range -4 +15 T stg Storage Temperature -4 +125 R θcs Case-To-Sink (Conductive Grease Applied).1 /W M Mounting Screw:M5 3. 5. N m G Weight 3 g Page 7 of 12 Rev..1 4/22/215
15 15 135 12 15 9 V GE =15V T J =125 T J =25 135 12 15 9 T J =125 V GE =17V V GE =15V V GE =13V V GE =11V V GE =9V I C (A) 75 I C (A) 75 6 6 45 45 3 3 15 1. 1.2 1.4 1.6 1.8 2. 2.2 2.4 2.6 2.8 3. V CE (V) Fig.1 Typical Saturation Voltage Characteristics 15 1. 1.2 1.4 1.6 1.8 2. 2.2 2.4 2.6 2.8 3. 3.2 3.4 3.6 V CE (V) Fig.2 Typical Output Characteristics 15 2 135 12 15 V GE =V T J =125 T J =25 15 V GE = V,f=1MHZ C ies C oes 9 I F (A) 75 6 C(nF) 1 45 3 5 15 1. 1.2 1.4 1.6 1.8 2. 2.2 2.4 2.6 2.8 3. V F (V) Fig.3 Forward Characteristics of FWD 5 1 15 2 25 V CE (V) Fig.4 Capacitance Characteristics 14 12 12 V CC =6V,V GE =+/-15V, R g =15 ohm,t J =125 1 V CC =6V,V GE =+/-15V, I C =75A,T J =125 E(mJ) 1 8 6 E off E on E rec E(mJ) 8 6 E off E on E rec 4 4 2 2 15 3 45 6 75 9 15 12 135 15 I C (A) Fig.5 Typical Switching Loss vs. Collector Current 3 6 9 12 15 18 21 24 27 3 R g ( ) Fig.6 Typical Switching Loss vs. Gate Resistance Page 8 of 12 Rev..1 4/22/215
15.4 9 Z thjc :IGBT 75.3 Load Current(A) 6 45 3 15 Duty Cycle:5% T J =125 T C =8 R g =15 ohm,v GE =15V Z thjc (K/W).2.1 1 1 6 Frequency(KHz) Fig.7 Typical Load Current vs. Frequency..1.1.1 1 2 T(s) Fig.8 Traient thermal impedance (IGBT).6 1 Z thjc (K/W).5.4.3.2 Z thjc :Diode I C (A) 9 8 7 6 5 4 3 V GE =15V T J =125 T J =25.1 2 1..1.1 T(s).1 1 2 5 Fig.9 Traient thermal impedance Diode 1. 1.2 1.4 1.6 1.8 2. 2.2 2.4 2.6 2.8 3. V CE (V) Fig.1 Typical Saturation Voltage Characteristics (Brake-Chopper) 15 45 4 35 V GE =V T J =125 T J =25 125 1 T J =25 T J =15 I F (A) 3 25 2 15 1 I F (A) 75 5 25 5.8 1. 1.2 1.4 1.6 1.8 2. 2.2 2.4 2.6 2.8 3. V F (V) Fig.11 Forward Characteristics of FWD (Brake-Chopper).8.9 1. 1.1 1.2 1.3 1.4 V F (V) Fig.12 Forward Characteristics of Diode (Rectifier) Page 9 of 12 Rev..1 4/22/215
1 8 R typ 15 12 R(Kohm) 6 4 I C (A) 9 6 2 3 Module Chip 1 2 3 4 5 6 7 8 9 1 11 12 T C ( ) Fig.13 NTC Temperature characteristics 2 4 6 8 1 12 V CES (V) Fig.14 Reverse Bias Safe Operation Area (RBSOA) Fig. 15 Forward Characteristics of SiC Diode (Boost) Fig. 16 Leakage Current of SiC Diode (Boost) Fig. 17 Capacitance Characteristics of SiC Diode (Boost) Fig. 18 Recovery Charge of Boost SiC Diode (Boost) Page 1 of 12 Rev..1 4/22/215
Internal Circuit: : SiC SBD Package Outline (Unit: mm): Page 11 of 12 Rev..1 4/22/215
Revision History Date Revision Notes 4/22/215.1 Initial release of preliminary datasheet Preliminary Data Sheet Global Power Technologies Group 2692 Prism Place Lake Forest, CA 9263 TEL (949) 27-75 FAX (949) 613-76 E-mail: info@gptechgroup.com Web site: www.gptechgroup.com Notes RoHS Compliance The levels of RoHS restricted materials in this product are below the maximum concentration values (also referred to as the threshold limits) permitted for such substances, or are used in an exempted application, in accordance with EU Directive 211/65/EC (RoHS2), as implemented March, 213. RoHS Declaratio for this product can be obtained from the Product Documentation sectio of www.gptechgroup.com. REACh Compliance REACh substances of high concern (SVHCs) information is available for this product. Since the European Chemical Agency (ECHA) has published notice of their intent to frequently revise the SVHC listing for the foreseeable future, please contact our office at GPTG Headquarters in Lake Forest, California to iure you get the most up-to-date REACh SVHC Declaration. REACh banned substance information (REACh Article 67) is also available upon request. This product has not been designed or tested for use in, and is not intended for use in, applicatio implanted into the human body nor in applicatio in which failure of the product could lead to death, personal injury or property damage, including but not limited to equipment used in the operation of nuclear facilities, life-support machines, cardiac defibrillators or similar emergency medical equipment, aircraft navigation or communication or control systems, or air traffic control. To obtain additional technical information or to place an order for this product, please contact us. The information in this datasheet is provided by Global Power Technologies Group. GPTG reserves the right to make changes, correctio, modificatio, and improvements of datasheet without notice. Page 12 of 12 Rev..1 4/22/215