INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Low V CE (on) Trench IGBT Technology Low Switching Losses 5µs SCSOA Square RBSOA % of The Parts Tested for I LM Positive V CE (on) Temperature Coefficient. Ultra Fast Soft Recovery Co-pak Diode Tighter Distribution of Parameters Lead-Free, RoHS Compliant Automotive Qualified * Benefits High Efficiency in a Wide Range of Applications Suitable for a Wide Range of Switching Frequencies due to Low V CE (ON) and Low Switching Losses Rugged Transient Performance for Increased Reliability Excellent Current Sharing in Parallel Operation Low EMI AUIRGB462D AUIRGP462D AUIRGP462D-E *Qualification standards can be found at http://www.irf.com/ www.irf.com G C E n-channel TO-22AB AUIRGB462D V CES = 6V I C = 24A, T C = C t SC 5µs, T J(max) = 75 C TO-247AC AUIRGP462D V CE(on) typ. =.6V G C E Gate Collector Emitter Absolute Maximum Ratings Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied.exposure to absolutemaximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (T A ) is 25 C, unless otherwise specified C G CE C G CE C PD - 96353 E G C TO-247AD AUIRGP462D-E Parameter Max. Units V CES Collector-to-Emitter Voltage 6 V I C @ T C = 25 C Continuous Collector Current 48 I C @ T C = C Continuous Collector Current 24 I CM Pulse Collector Current, V GE = 5V 72 I LM Clamped Inductive Load Current, V GE = 2V c 96 A I F @ T C = 25 C Diode Continous Forward Current 48 I F @ T C = C Diode Continous Forward Current 24 I FM Diode Maximum Forward Current e 96 V GE Continuous Gate-to-Emitter Voltage ±2 V Transient Gate-to-Emitter Voltage ±3 P D @ T C = 25 C Maximum Power Dissipation 25 W P D @ T C = C Maximum Power Dissipation 25 T J Operating Junction and -55 to +75 T STG Storage Temperature Range C Soldering Temperature, for sec. 3 (.63 in. (.6mm) from case) Mounting Torque, 6-32 or M3 Screw lbf in (. N m) Thermal Resistance Parameter Min. Typ. Max. Units R θjc (IGBT) Thermal Resistance Junction-to-Case-(each IGBT) TO-22.6 R θjc (Diode) Thermal Resistance Junction-to-Case-(each Diode) TO-22.53 R θjc (IGBT) Thermal Resistance Junction-to-Case-(each IGBT) TO-247.65 C/W R θjc (Diode) Thermal Resistance Junction-to-Case-(each Diode) TO-247.62 R θcs Thermal Resistance, Case-to-Sink (flat, greased surface)-to-22.5 R θcs Thermal Resistance, Case-to-Sink (flat, greased surface)-to-247.24 R θja Thermal Resistance, Junction-to-Ambient (typical socket mount)-to-22 62 R θja Thermal Resistance, Junction-to-Ambient (typical socket mount)- TO-247 4 2//
AUIRGB/P462D/P462D-E Electrical Characteristics @ T J = 25 C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions Ref.Fig V (BR)CES Collector-to-Emitter Breakdown Voltage 6 V V GE = V, I C = µa f CT6 V (BR)CES / T J Temperature Coeff. of Breakdown Voltage.3 V/ C V GE = V, I C = ma (25 C-75 C) CT6.6.95 I C = 24A, V GE = 5V, T J = 25 C 5,6,7 V CE(on) Collector-to-Emitter Saturation Voltage 2.3 V I C = 24A, V GE = 5V, T J = 5 C 9,, 2.4 I C = 24A, V GE = 5V, T J = 75 C V GE(th) Gate Threshold Voltage 4. 6.5 V V CE = V GE, I C = 7µA 9,, V GE(th) / TJ Threshold Voltage temp. coefficient -8 mv/ C V CE = V GE, I C =.ma (25 C - 75 C), 2 gfe Forward Transconductance 7 S V CE = 5V, I C = 24A, PW = 8µs I CES Collector-to-Emitter Leakage Current 2. 25 µa V GE = V, V CE = 6V 775 V GE = V, V CE = 6V, T J = 75 C V FM Diode Forward Voltage Drop.8 2.6 V I F = 24A 8.28 I F = 24A, T J = 75 C I GES Gate-to-Emitter Leakage Current ± na V GE = ±2V Switching Characteristics @ T J = 25 C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions Ref.Fig Q g Total Gate Charge (turn-on) 5 75 I C = 24A 24 Q ge Gate-to-Emitter Charge (turn-on) 3 2 nc V GE = 5V CT Q gc Gate-to-Collector Charge (turn-on) 2 3 V CC = 4V E on Turn-On Switching Loss 5 2 I C = 24A, V CC = 4V, V GE = 5V CT4 E off Turn-Off Switching Loss 6 7 µj R G = Ω, L = 2µH, L S = 5nH, T J = 25 C E total Total Switching Loss 75 9 Energy losses include tail & diode reverse recovery t d(on) Turn-On delay time 4 53 I C = 24A, V CC = 4V, V GE = 5V CT4 t r Rise time 22 3 ns R G = Ω, L = 2µH, L S = 5nH, T J = 25 C t d(off) Turn-Off delay time 4 5 t f Fall time 29 4 E on Turn-On Switching Loss 42 I C = 24A, V CC = 4V, V GE =5V 3, 5 E off Turn-Off Switching Loss 84 µj R G =Ω, L= 2µH, L S =5nH, T J = 75 C f CT4 E total Total Switching Loss 26 Energy losses include tail & diode reverse recovery WF, WF2 t d(on) Turn-On delay time 4 I C = 24A, V CC = 4V, V GE = 5V 4, 6 t r Rise time 24 ns R G = Ω, L = 2µH, L S = 5nH CT4 t d(off) Turn-Off delay time 25 T J = 75 C WF t f Fall time 39 WF2 C ies Input Capacitance 49 pf V GE = V 23 C oes Output Capacitance 29 V CC = 3V C res Reverse Transfer Capacitance 45 f =.Mhz T J = 75 C, I C = 96A 4 RBSOA Reverse Bias Safe Operating Area FULL SQUARE V CC = 48V, Vp =6V CT2 Rg = Ω, V GE = +2V to V SCSOA Short Circuit Safe Operating Area 5 µs V CC = 4V, Vp =6V 22, CT3 Rg = Ω, V GE = +5V to V Erec Reverse Recovery Energy of the Diode 62 µj T J = 75 C 7, 8, 9 t rr Diode Reverse Recovery Time 89 ns V CC = 4V, I F = 24A 2, 2 I rr Peak Reverse Recovery Current 37 A V GE = 5V, Rg = Ω, L =2µH, L s = 5nH WF3 WF4 Notes: V CC = 8% (V CES ), V GE = 2V, L = µh, R G = Ω. This is only applied to TO-22AB package. ƒ Pulse width limited by max. junction temperature. Refer to AN-86 for guidelines for measuring V (BR)CES safely. 2 www.irf.com
AUIRGB/P462D/P462D-E Qualification Information Automotive (per AEC-Q) Qualification Level Comments: This part number(s) passed Automotive qualification. IR s Industrial and Consumer qualification level is granted by extension of the higher Automotive level. Moisture Sensitivity Level Machine Model ESD Human Body Model Charged Device Model RoHS Compliant 3L-TO-22 3L-TO-247AC 3L-TO-247AD Class M4(+/- 4V ) (per AEC-Q-2) Class HC(+/- 2V ) (per AEC-Q-) Class C5(+/- V ) (per AEC-Q-5) Yes N/A Qualification standards can be found at International Rectifier s web site: http//www.irf.com/ Exceptions to AEC-Q requirements are noted in the qualification report. Highest passing voltage www.irf.com 3
I CE (A) I CE (A) I C (A) I C (A) I C (A) P tot (W) AUIRGB/P462D/P462D-E 5 3 45 4 25 35 3 2 25 5 2 5 5 5 2 4 6 8 2 4 6 8 2 4 6 8 2 4 6 8 T C ( C) T C ( C) Fig. - Maximum DC Collector Current vs. Case Temperature Fig. 2 - Power Dissipation vs. Case Temperature µsec 9 µsec msec Tc = 25 C Tj = 75 C DC Single Pulse. V CE (V) Fig. 3 - Forward SOA T C = 25 C, T J 75 C; V GE =5V V CE (V) 9 Fig. 4 - Reverse Bias SOA T J = 75 C; V GE =2V 8 8 7 6 5 4 V GE = 8V VGE = 5V VGE = 2V VGE = V VGE = 8.V 7 6 5 4 V GE = 8V VGE = 5V VGE = 2V VGE = V VGE = 8.V 3 3 2 2 2 3 4 5 6 7 8 2 3 4 5 6 7 8 V CE (V) Fig. 5 - Typ. IGBT Output Characteristics T J = -4 C; tp = 8µs V CE (V) Fig. 6 - Typ. IGBT Output Characteristics T J = 25 C; tp = 8µs 4 www.irf.com
V CE (V) I CE (A) V CE (V) V CE (V) I CE (A) I F (A) AUIRGB/P462D/P462D-E 9 2 8 7 6 5 4 V GE = 8V VGE = 5V VGE = 2V VGE = V VGE = 8.V 8 6-4 c 25 C 75 C 3 4 2 2 2 3 4 5 6 7 8 V CE (V) Fig. 7 - Typ. IGBT Output Characteristics T J = 75 C; tp = 8µs 2 8 6 4.. 2. 3. V F (V) Fig. 8 - Typ. Diode Forward Characteristics tp = 8µs 2 8 6 4 2 8 I CE = 2A I CE = 24A I CE = 48A 2 8 I CE = 2A I CE = 24A I CE = 48A 6 6 4 4 2 2 5 5 2 5 5 2 V GE (V) V GE (V) Fig. 9 - Typical V CE vs. V GE T J = -4 C Fig. - Typical V CE vs. V GE T J = 25 C 2 2 8 6 4 2 I CE = 2A 8 T J = 25 C T J = 75 C 8 6 I CE = 24A I CE = 48A 6 4 4 2 2 5 5 2 5 5 V GE (V) V GE (V) Fig. - Typical V CE vs. V GE T J = 75 C Fig. 2 - Typ. Transfer Characteristics V CE = 5V; tp = µs www.irf.com 5
I RR (A) I RR (A) Energy (µj) Swiching Time (ns) Energy (µj) Swiching Time (ns) AUIRGB/P462D/P462D-E 8 6 4 td OFF 2 E OFF td ON 8 t F 6 E ON t R 4 2 2 3 4 5 6 I C (A) 2 3 4 5 I C (A) Fig. 3 - Typ. Energy Loss vs. I C T J = 75 C; L = 2µH; V CE = 4V, R G = Ω; V GE = 5V 6 Fig. 4 - Typ. Switching Time vs. I C T J = 75 C; L = 2µH; V CE = 4V, R G = Ω; V GE = 5V 4 2 8 E ON E OFF td OFF 6 td ON 4 t F 2 Fig. 5 - Typ. Energy Loss vs. R G T J = 75 C; L = 2µH; V CE = 4V, I CE = 24A; V GE = 5V 4 35 3 25 5 75 25 Rg (Ω) R G = Ω R G = 22Ω t R 25 5 75 25 R G (Ω) Fig. 6 - Typ. Switching Time vs. R G T J = 75 C; L = 2µH; V CE = 4V, I CE = 24A; V GE = 5V 45 4 35 3 25 25 2 R G = 47Ω 2 5 R G = Ω 5 2 3 4 5 6 5 25 5 75 25 I F (A) R G (Ω) Fig. 7 - Typ. Diode I RR vs. I F T J = 75 C Fig. 8 - Typ. Diode I RR vs. R G T J = 75 C 6 www.irf.com
Capacitance (pf) V GE, Gate-to-Emitter Voltage (V) Energy (µj) Time (µs) I RR (A) Q RR (nc) AUIRGB/P462D/P462D-E 45 4 4 35 48A 35 3 25 2 5 3 25 2 5 Ω 47Ω 22Ω 24A 2A Ω 5 5 5 di F /dt (A/µs) Fig. 9 - Typ. Diode I RR vs. di F /dt V CC = 4V; V GE = 5V; I F = 24A; T J = 75 C 5 5 5 di F /dt (A/µs) Fig. 2 - Typ. Diode Q RR vs. di F /dt V CC = 4V; V GE = 5V; T J = 75 C 6 28 8 4 24 6 4 R G = Ω R G = 22Ω R G = 47Ω R G = Ω 2 8 2 6 2 Current (A) 2 6 8 2 3 4 5 6 I F (A) Fig. 2 - Typ. Diode E RR vs. I F T J = 75 C 4 4 8 2 4 6 8 V GE (V) Fig. 22 - V GE vs. Short Circuit Time V CC = 4V; T C = 25 C 6 4 V CES = 3V Cies 2 V CES = 4V 8 Coes 6 4 Cres 2 2 4 6 8 5 5 2 25 3 35 4 45 5 55 V CE (V) Q G, Total Gate Charge (nc) Fig. 23 - Typ. Capacitance vs. V CE V GE = V; f = MHz Fig. 24 - Typical Gate Charge vs. V GE I CE = 24A; L = 6µH www.irf.com 7
AUIRGB/P462D/P462D-E D =.5 Thermal Response ( Z thjc )..2...5.2. R R 2 R R 2 τ J τ J τ τ τ 2 τ 2 τ C τ Ri ( C/W) τi (sec).2329.234.363.79. SINGLE PULSE ( THERMAL RESPONSE ) Ci= τi/ri Ci i/ri Notes:. Duty Factor D = t/t2 2. Peak Tj = P dm x Zthjc + Tc. E-6 E-5.... t, Rectangular Pulse Duration (sec) Fig 25. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT) TO-22AB D =.5 Thermal Response ( Z thjc )....2..5.2. SINGLE PULSE ( THERMAL RESPONSE ) R R R 2 R 2 R 3 R 3 τ J τ J τ τ τ 2 τ 2 τ 3 τ 3 Ci= τi/ri Ci i/ri Ri ( C/W) τi (sec).476.763.647.328.46.23686 Notes:. Duty Factor D = t/t2 2. Peak Tj = P dm x Zthjc + Tc. E-6 E-5.... t, Rectangular Pulse Duration (sec) τ C τ Fig. 26. Maximum Transient Thermal Impedance, Junction-to-Case (DIODE) TO-22AB 8 www.irf.com
Thermal Response ( Z thjc ) AUIRGB/P462D/P462D-E D =.5..2...5.2. R R 2 R R 2 τ J τ J τ τ τ 2 τ 2 Ci= τi/ri Ci i/ri τ C τ Ri ( C/W) τi (sec).2782.3.375.6347 SINGLE PULSE ( THERMAL RESPONSE ) Notes:. Duty Factor D = t/t2 2. Peak Tj = P dm x Zthjc + Tc. E-6 E-5.... t, Rectangular Pulse Duration (sec) Fig 27. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT) TO-247AC D =.5 Thermal Response ( Z thjc )....2..5.2. SINGLE PULSE ( THERMAL RESPONSE ) R R R 2 R 2 R 3 R 3 τ J τ J τ τ τ 2 τ 2 τ 3 τ 3 Ci= τi/ri Ci i/ri Ri ( C/W) τi (sec).693.222.62.5254.37.384 Notes:. Duty Factor D = t/t2 2. Peak Tj = P dm x Zthjc + Tc. E-6 E-5.... t, Rectangular Pulse Duration (sec) τ C τ Fig. 28. Maximum Transient Thermal Impedance, Junction-to-Case (DIODE) TO-247AC www.irf.com 9
AUIRGB/P462D/P462D-E L K DUT L VC C 8 V Rg DUT 48V Fig.C.T. - Gate Charge Circuit (turn-off) Fig.C.T.2 - RBSOA Circuit diode clamp / DUT L 4x DC DUT VCC 36V - 5V Rg DUT / DRIVER VCC Fig.C.T.3 - S.C. SOA Circuit Fig.C.T.4 - Switching Loss Circuit R = VCC ICM Rg DUT VCC Fig.C.T.5 - Resistive Load Circuit Fig.C.T.6 - BVCES Filter Circuit www.irf.com
AUIRGB/P462D/P462D-E 6 tf 3 6 6 5 25 5 5 4 9% I CE 2 4 V CE tr 4 VCE (V) 3 2 I CE V CE 5 VCE (V) 3 2 9% test I CE 3 2 5% V CE % I CE 5 5% I CE 5% V CE E OFF Loss - -.4..6 Time(µs) -5 - E ON.7.9 2. 2.3 Time (µs) - Fig. WF - Typ. Turn-off Loss Waveform @ T J = 75 C using Fig. CT.4 Fig. WF2 - Typ. Turn-on Loss Waveform @ T J = 75 C using Fig. CT.4 3 6 3 2 Q RR 5 I CE 25 t RR 4 2 IRR (A) - -2 Peak I RR % Peak I RR VCE (V) 3 2 V CE 5 ICE (A) -3 5-4 -5 -.5 -.5.5.5.25 time (µs) Fig. WF3 - Typ. Diode Recovery Waveform @ T J = 75 C using Fig. CT.4 - -5.. 5.. time (µs) Fig. WF4 - Typ. S.C. Waveform @ T J = 25 C using Fig. CT.3-5 www.irf.com
AUIRGB/P462D/P462D-E TO-22AB Package Outline Dimensions are shown in millimeters (inches) TO-22AB Part Marking Information Part Number IR Logo AUGB462D YWWA XX or XX Date Code Y= Year WW= Work Week A= Automotive, Lead Free Lot Code Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 2 www.irf.com
AUIRGB/P462D/P462D-E TO-247AC Package Outline Dimensions are shown in millimeters (inches) TO-247AC Part Marking Information Part Number IR Logo AUGP462D YWWA XX or XX Date Code Y= Year WW= Work Week A= Automotive, Lead Free Lot Code Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ www.irf.com 3
AUIRGB/P462D/P462D-E TO-247AD Package Outline Dimensions are shown in millimeters (inches) TO-247AD Part Marking Information Part Number IR Logo AUGP462D-E YWWA XX or XX Date Code Y= Year WW= Work Week A= Automotive, Lead Free Lot Code Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 4 www.irf.com
AUIRGB/P462D/P462D-E Ordering Information Base part number Package Type Standard Pack Complete Part Number Form Quantity AUIRGB462D TO-22 Tube 5 AUIRGB462D AUIRGP462D TO-247AC Tube 25 AUIRGP462D AUIRGP462D-E TO-247AD Tube 25 AUIRGP462D-E www.irf.com 5
AUIRGB/P462D/P462D-E IMPORTANT NOTICE Unless specifically designated for the automotive market, International Rectifier Corporation and its subsidiaries (IR) reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue any product or services without notice. Part numbers designated with the AU prefix follow automotive industry and / or customer specific requirements with regards to product discontinuance and process change notification. All products are sold subject to IR s terms and conditions of sale supplied at the time of order acknowledgment. IR warrants performance of its hardware products to the specifications applicable at the time of sale in accordance with IR s standard warranty. Testing and other quality control techniques are used to the extent IR deems necessary to support this warranty. Except where mandated by government requirements, testing of all parameters of each product is not necessarily performed. IR assumes no liability for applications assistance or customer product design. Customers are responsible for their products and applications using IR components. To minimize the risks with customer products and applications, customers should provide adequate design and operating safeguards. Reproduction of IR information in IR data books or data sheets is permissible only if reproduction is without alteration and is accompanied by all associated warranties, conditions, limitations, and notices. Reproduction of this information with alterations is an unfair and deceptive business practice. IR is not responsible or liable for such altered documentation. Information of third parties may be subject to additional restrictions. Resale of IR products or serviced with statements different from or beyond the parameters stated by IR for that product or service voids all express and any implied warranties for the associated IR product or service and is an unfair and deceptive business practice. IR is not responsible or liable for any such statements. IR products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or in other applications intended to support or sustain life, or in any other application in which the failure of the IR product could create a situation where personal injury or death may occur. Should Buyer purchase or use IR products for any such unintended or unauthorized application, Buyer shall indemnify and hold International Rectifier and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that IR was negligent regarding the design or manufacture of the product. IR products are neither designed nor intended for use in military/aerospace applications or environments unless the IR products are specifically designated by IR as military-grade or enhanced plastic. Only products designated by IR as military-grade meet military specifications. Buyers acknowledge and agree that any such use of IR products which IR has not designated as militarygrade is solely at the Buyer s risk, and that they are solely responsible for compliance with all legal and regulatory requirements in connection with such use. IR products are neither designed nor intended for use in automotive applications or environments unless the specific IR products are designated by IR as compliant with ISO/TS 6949 requirements and bear a part number including the designation AU. Buyers acknowledge and agree that, if they use any non-designated products in automotive applications, IR will not be responsible for any failure to meet such requirements For technical support, please contact IR s Technical Assistance Center http://www.irf.com/technical-info/ WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 9245 Tel: (3) 252-75 6 www.irf.com