SPP7N6C3 SPI7N6C3, SP7N6C3 Cool MOS Power Transistor V DS @ T jmax 65 V Feature New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated Extreme dv/dt rated High peak current capability Improved transconductance PGTOFP PGTO6 PGTO33;3: Fully isolated package (5 VC; minute) PTO33 3 R DS(on).6 Ω I D 7.3 PGTO PTO3 3 Type Package Ordering Code SPP7N6C3 PGTO3 Q67S SPI7N6C3 PGTO6 Q67S SP7N6C3 PGTOFP SP633 Marking 7N6C3 7N6C3 7N6C3 Maximum Ratings Parameter Symbol Value Unit Continuous drain current T C = 5 C T C = C Rev. 3. Page SPP_I I D 7.3.6 SP 7.3 ).6 ) Pulsed drain current, t p limited by T jmax I D puls.9.9 valanche energy, single pulse I D =5.5, V DD =5V valanche energy, repetitive t R limited by T jmax ) I D =7.3, V DD =5V E S 3 3 mj E R.5.5 valanche current, repetitive t R limited by T jmax I R 7.3 7.3 Gate source voltage static V GS ± ± V Gate source voltage C (f >Hz) V GS ±3 ±3 Power dissipation, T C = 5 C P tot 83 3 W Operating and storage temperature T j, T stg 55...+5 C Reverse diode dv/dt 6) dv/dt 5 V/ns 97 Rev. 3.3 Page 83
Maximum Ratings SPP7N6C3 SPI7N6C3, SP7N6C3 Parameter Symbol Value Unit Drain Source voltage slope V DS = 8 V, I D = 7.3, T j = 5 C Thermal Characteristics dv/dt 5 V/ns Parameter Symbol Values Unit min. typ. max. Thermal resistance, junction case R thjc.5 K/W Thermal resistance, junction case, FullPK R thjc_fp 3.9 Thermal resistance, junction ambient, leaded R thj 6 Thermal resistance, junction ambient, FullPK R thj_fp 8 SMD version, device on PCB: @ min. footprint @ 6 cm cooling area 3) Soldering temperature, wavesoldering.6 mm (.63 in.) from case for s R thj Electrical Characteristics, at T j =5 C unless otherwise specified 35 6 T sold 6 C Parameter Symbol Conditions Values Unit min. typ. max. Drainsource breakdown voltage V (BR)DSS V GS =V, I D =.5m 6 V DrainSource avalanche breakdown voltage V (BR)DS V GS =V, I D =7.3 7 Gate threshold voltage V GS(th) I D =35µ, V GS =V DS. 3 3.9 Zero gate voltage drain current I DSS V DS =6V, V GS =V, T j =5 C T j =5 C Gatesource leakage current I GSS V GS =3V, V DS =V n Drainsource onstate resistance R DS(on) V GS =V, I D =.6 T j =5 C T j =5 C.5.5.6 Gate input resistance R G f=mhz, open drain.8.6 µ Ω Rev. 3. Page 97 Rev. 3.3 Page 83
Electrical Characteristics, at T j = 5 C, unless otherwise specified SPP7N6C3 SPI7N6C3, SP7N6C3 Parameter Symbol Conditions Values Unit Characteristics Transconductance g fs V DS *I D *R DS(on)max, I D =.6 Input capacitance C iss V GS =V, V DS =5V, min. typ. max. 6 S 79 pf Output capacitance C oss f=mhz 6 Reverse transfer capacitance C rss 6 Effective output capacitance, ) energy related Effective output capacitance, 5) time related C o(er) V GS =V, V DS =V to 8V 3 C o(tr) 55 Turnon delay time t d(on) V DD =38V, V GS =/3V, 6 ns Rise time t r I D =7.3, R G =Ω, 3.5 Turnoff delay time t d(off) T j =5 C 6 Fall time t f 7 5 Gate Charge Characteristics Gate to source charge Q gs V DD =8V, I D =7.3 3 nc Gate to drain charge Q gd 9. Gate charge total Q g V DD =8V, I D =7.3, V GS = to V 7 Gate plateau voltage V (plateau) V DD =8V, I D =7.3 5.5 V Limited only by maximum temperature Repetitve avalanche causes additional power losses that can be calculated as PV =ER*f. 3 Device on mm*mm*.5mm epoxy PCB FR with 6cm² (one layer, 7 µm thick) copper area for drain connection. PCB is vertical without blown air. Co(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from to 8% V DSS. 5 Co(tr) is a fixed capacitance that gives the same charging time as C oss while V DS is rising from to 8% V DSS. 6 ISD <=I D, di/dt<=/us, V DClink =V, V peak <V BR, DSS, T j <T j,max. Identical lowside and highside switch. Rev. 3. Page 3 97 Rev. 3.3 Page 3 83
Electrical Characteristics SPP7N6C3 SPI7N6C3, SP7N6C3 Parameter Symbol Conditions Values Unit Inverse diode continuous forward current Inverse diode direct current, pulsed min. typ. max. I S T C =5 C 7.3 I SM.9 Inverse diode forward voltage V SD V GS =V, I F =I S. V Reverse recovery time t rr V R =8V, I F =I S, 6 ns Reverse recovery charge Q rr di F /dt=/µs µc Peak reverse recovery current I rrm 8 Peak rate of fall of reverse recovery current Typical Transient Thermal Characteristics di rr /dt T j =5 C 8 /µs Symbol Value Unit Symbol Value Unit SPP_I SP SPP_I SP R th.. K/W C th.. Ws/K R th.6.6 C th.578.578 R th3.85.85 C th3.65.65 R th.38.95 C th.867.867 R th5.37.5 C th5.795.7558 R th6..5 C th6.5. P tot (t) T j R th R th,n Tcase External Heatsink C th C th C th,n T amb Rev. 3. Page 97 Rev. 3.3 Page 83
SPP7N6C3 SPI7N6C3, SP7N6C3 Power dissipation P tot = f (T C ) Power dissipation FullPK P tot = f (T C ) SPP7N6C3 W 3 W 8 7 8 Ptot 6 Ptot 5 6 3 8 6 8 C 6 6 8 C 6 T C T C 3 Safe operating area I D = f ( V DS ) parameter : D =, T C =5 C Safe operating area FullPK I D = f (V DS ) parameter: D =, T C = 5 C ID ID tp =. ms tp =. ms tp =. ms tp = ms DC tp =. ms tp =. ms tp =. ms tp = ms tp = ms DC V 3 V DS V 3 V DS Rev. 3. Page 5 97 Rev. 3.3 Page 5 83
SPP7N6C3 SPI7N6C3, SP7N6C3 5 Transient thermal impedance Z thjc = f (t p ) parameter: D = t p /T K/W 6 Transient thermal impedance FullPK Z thjc = f (t p ) parameter: D = t p /t K/W ZthJC ZthJC D =.5 D =. D =. D =.5 D =. D =. single pulse D =.5 D =. D =. D =.5 D =. D =. single pulse 3 7 6 5 3 s t p 7 Typ. output characteristic I D = f (V DS ); T j =5 C parameter: t p = µs, V GS 3 7 6 5 3 s t p 8 Typ. output characteristic I D = f (V DS ); T j =5 C parameter: t p = µs, V GS V V 8V 7V 3 V 8V 6.5V 6V ID 6 6,5V 6V ID 9 8 7 6 5.5V 8 5,5V 5 5V 5V,5V 3.5V V 5 5 V 5 DS V 6 8 6 8 V 5 V DS Rev. 3. Page 6 97 Rev. 3.3 Page 6 83
SPP7N6C3 SPI7N6C3, SP7N6C3 9 Typ. drainsource on resistance R DS(on) =f(i D ) parameter: T j =5 C, V GS Ω V Drainsource onstate resistance R DS(on) = f (T j ) parameter : I D =.6, V GS = V 3. SPP7N6C3 Ω 8.5V.8 R DS(on) 7 6 5V RDS(on). 5 3 5.5V 6V 6.5V 8V V.6..8 98% typ. 6 8 5 I D Typ. transfer characteristics I D = f ( V GS ); V DS x I D x R DS(on)max parameter: t p = µs 8 5 C 6 6 C 8 T j Typ. gate charge V GS = f (Q Gate ) parameter: I D = 7.3 pulsed 6 SPP7N6C3 V ID 6 5 C VGS 8, V DS max,8 V DS max 8 6 6 6 8 6 V V GS 8 6 8 nc 3 Q Gate Rev. 3. Page 7 97 Rev. 3.3 Page 7 83
SPP7N6C3 SPI7N6C3, SP7N6C3 3 Forward characteristics of body diode I F = f (V SD ) parameter: T j, tp = µs SPP7N6C3 Typ. switching time t = f (I D ), inductive load, T j =5 C par.: V DS =38V, V GS =/+3V, R G =Ω 9 ns 7 td(off) 6 IF t 5 T j = 5 C typ T j = 5 C typ T j = 5 C (98%) 3 tf td(on) tr T j = 5 C (98%)..8..6. V 3 V SD 5 Typ. switching time t = f (R G ), inductive load, T j =5 C par.: V DS =38V, V GS =/+3V, I D =7.3 5 ns 3 5 6 8 I D 6 Typ. drain current slope di/dt = f(r G ), inductive load, T j = 5 C par.: V DS =38V, V GS =/+3V, I D =7.3 3 /µs t 35 3 di/dt 5 td(off) 5 5 5 td(on) tf tr 5 di/dt(off) di/dt(on) 6 8 Ω 3 R G 6 8 Ω 3 R G Rev. 3. Page 8 97 Rev. 3.3 Page 8 83
SPP7N6C3 SPI7N6C3, SP7N6C3 7 Typ. drain source voltage slope dv/dt = f(r G ), inductive load, T j = 5 C par.: V DS =38V, V GS =/+3V, I D =7.3 8 Typ. switching losses E = f (I D ), inductive load, T j =5 C par.: V DS =38V, V GS =/+3V, R G =Ω V/ns 8.5 mws *) E on includes SDP6S6 diode commutation losses. 7 dv/dt 6 E.5 5 dv/dt(on). Eoff 3 dv/dt(off).5 Eon* 6 8 Ω R G 9 Typ. switching losses E = f(r G ), inductive load, T j =5 C par.: V DS =38V, V GS =/+3V, I D =7.3 3 5 6 8 I D valanche SO I R = f (t R ) par.: T j 5 C mws. *) E on includes SDP6S6 diode commutation losses. 8.6. 6 T j(strt) =5 C E. IR 5 T j(strt) =5 C..8 Eoff 3.6.. Eon* 6 8 Ω 3 R G 3 µs t R Rev. 3. Page 9 97 Rev. 3.3 Page 9 83
SPP7N6C3 SPI7N6C3, SP7N6C3 valanche energy E S = f (T j ) par.: I D = 5.5, V DD = 5 V 6 mj Drainsource breakdown voltage V (BR)DSS = f (T j ) 7 SPP7N6C3 V ES 8 6 V(BR)DSS 68 66 6 8 6 6 6 58 56 6 8 C 6 5 6 6 C 8 T j T j 3 valanche power losses P R = f (f ) parameter: E R =.5mJ 5 Typ. capacitances C = f (V DS ) parameter: V GS =V, f= MHz pf W 3 C iss PR 3 C C oss C rss 5 MHz 6 f 3 V 6 V DS Rev. 3. Page 97 Rev. 3.3 Page 83
SPP7N6C3 SPI7N6C3, SP7N6C3 5 Typ. C oss stored energy E oss =f(v DS ) 5.5 µj.5 Eoss 3.5 3.5.5.5 3 V 6 V DS Definition of diodes switching characteristics Rev. 3. Page 97 Rev. 3.3 Page 83
SPP7N6C3 SPI7N6C3, SP7N6C3 PGTO3, PGTO3 : Outline Rev. 3. Page 97 Rev. 3.3 Page 83
SPP7N6C3 SPI7N6C3, SP7N6C3 Outline PG TO FullPK 3 MILLIMETERS DIMENSIONS MIN. MX. DOCUMENT NO..5.9 Z8B339.3.85..86 REVISION b.65.9 7 b.95.38 b.95.5 SCLE 5: b3.65.38 3 5mm b.65.5 c..63 D 5.67 6.5 D 8.97 9.83 EUROPEN PROJECTION E..65 e.5 H 8.7 9.75 L L øp.78.83 3. 3.75 3.5 3.3 ISSUE DTE Q 3.5 3.5 7..7 Rev. 3. Page 3 97 Rev. 3.3 Page 3 83
SPP7N6C3 SPI7N6C3, SP7N6C3 PGTO63/PGTO63 (I²PK) Rev. 3. Page 97 Rev. 3.3 Page 83
6VCoolMOSªC3PowerTransistor SPx7N6C3 RevisionHistory SPx7N6C3 Revision:87,Rev..3 Previous Revision Revision Date Subjects (major changes since last revision) 3.3 87 Outline PGTO FullPK update TrademarksofInfineonTechnologiesG URIX,C66,CanPK,CIPOS,CoolGaN,CoolMOS,CoolSET,CoolSiC,CORECONTROL,CROSSVE,DVE,DIPOL,DrBlade, EasyPIM,EconoBRIDGE,EconoDUL,EconoPCK,EconoPIM,EiceDRIVER,eupec,FCOS,HITFET,HybridPCK,Infineon, ISOFCE,IsoPCK,iWafer,MIPQ,ModSTCK,myd,NovalithIC,OmniTune,OPTIG,OptiMOS,ORIG,POWERCODE, PRIMRION,PrimePCK,PrimeSTCK,PROFET,PROSIL,RSIC,REL3,ReverSave,SatRIC,SIEGET,SIPMOS,SmartLEWIS, SOLIDFLSH,SPOC,TEMPFET,thinQ,TRENCHSTOP,TriCore. Trademarksupdatedugust5 OtherTrademarks llreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners. WeListentoYourComments nyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.pleasesendyourproposal(includingareferencetothisdocument)to: erratum@infineon.com Publishedby InfineonTechnologiesG 876München,Germany 8InfineonTechnologiesG llrightsreserved. LegalDisclaimer Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics ( Beschaffenheitsgarantie ). Withrespecttoanyexamples,hintsoranytypicalvaluesstatedhereinand/oranyinformationregardingtheapplicationofthe product,infineontechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithoutlimitation warrantiesofnoninfringementofintellectualpropertyrightsofanythirdparty. Inaddition,anyinformationgiveninthisdocumentissubjecttocustomer scompliancewithitsobligationsstatedinthis documentandanyapplicablelegalrequirements,normsandstandardsconcerningcustomer sproductsandanyuseofthe productofinfineontechnologiesincustomer sapplications. Thedatacontainedinthisdocumentisexclusivelyintendedfortechnicallytrainedstaff.Itistheresponsibilityofcustomer s technicaldepartmentstoevaluatethesuitabilityoftheproductfortheintendedapplicationandthecompletenessoftheproduct informationgiveninthisdocumentwithrespecttosuchapplication. Information Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon TechnologiesOffice(www.infineon.com). Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion, pleasecontactthenearestinfineontechnologiesoffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlifesupportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofinfineontechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlifesupport,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered. 5 Rev.3.3,87