SPP24N6C3 Cool MOS Power Transistor V DS @ T jmax 65 V Feature New revolutionary high voltage technology Worldwide best R DS(on) in TO 22 Ultra low gate charge Periodic avalanche rated Extreme dv/dt rated Ultra low effective capacitances Improved transconductance R DS(on).16 Ω I D 24.3 PG-TO22-3-1 Type Package Ordering Code SPP24N6C3 PG-TO22-3-1 Q674-S4639 Marking 24N6C3 Maximum Ratings Parameter Symbol Value Unit Continuous drain current I D T C = 25 C T C = C 24.3 15.4 Pulsed drain current, t p limited by T jmax I D puls 72.9 valanche energy, single pulse I D =, V DD = 5 V E S 78 mj valanche energy, repetitive t R limited by T 1) jmax E R 1 I D = 24.3, V DD = 5 V valanche current, repetitive t R limited by T jmax I R 24.3 Gate source voltage static V GS ±2 V Gate source voltage C (f >1Hz) V GS ±3 Power dissipation, T C = 25 C P tot 24 W Operating and storage temperature T j, T stg -55... +15 C Reverse diode dv/dt 4) dv/dt 15 V/ns Rev. 2.5 Page 1 29-12-1
SPP24N6C3 Maximum Ratings Parameter Symbol Value Unit Drain Source voltage slope dv/dt 5 V/ns V DS = 48, I D = 24.3, T j = 125 C Thermal Characteristics Parameter Symbol Values Unit min. typ. max. Thermal resistance, junction - case R thjc - -.52 K/W Thermal resistance, junction - ambient, leaded R thj - - 62 Soldering temperature, wavesoldering 1.6 mm (.63 in.) from case for s T sold - - 26 C Electrical Characteristics, at Tj=25 C unless otherwise specified Parameter Symbol Conditions Values Unit min. typ. max. Drain-source breakdown voltage V (BR)DSS V GS =V, I D =.25m 6 - - V Drain-Source avalanche V (BR)DS V GS =V, I D =24.3-7 - breakdown voltage Gate threshold voltage V GS(th) I D =12µΑ, V GS =V DS 2.1 3 3.9 Zero gate voltage drain current I DSS V DS =6V, V GS =V, µ T j =25 C, T j =15 C -.1 1 - - Gate-source leakage current I GSS V GS =2, V DS =V - - n Drain-source on-state resistance R DS(on) V GS =V, I D =15.4, Ω T j =25 C T j =15 C -.14.16 -.34 - Gate input resistance R G f=1mhz, open Drain -.66 - Rev. 2.5 Page 2 29-12-1
SPP24N6C3 Electrical Characteristics, at T j = 25 C, unless otherwise specified Parameter Symbol Conditions Values Unit min. typ. max. Transconductance g fs V DS 2*I D *R DS(on)max, - 21.5 - S I D =15.4 Input capacitance C iss V GS =V, V DS =25V, - 3 - pf Output capacitance C oss f=1mhz - - Reverse transfer capacitance C rss - 6 - Effective output capacitance, 2) C o(er) V GS =V, - 141 - pf energy related V DS =V to 48V Effective output capacitance, 3) time related C o(tr) - 224 - Turn-on delay time t d(on) V DD =38V, V GS =/V, - 13 - ns Rise time t r I D =24.3, R G =3.3Ω - 21 - Turn-off delay time t d(off) - 14 - Fall time t f - 14 - Gate Charge Characteristics Gate to source charge Q gs V DD =48, I D =24.3-12.7 - nc Gate to drain charge Q gd - 45.8 - Gate charge total Q g V DD =48V, I D =24.3, - 4.9 135 V GS = to V Gate plateau voltage V (plateau) V DD =48V, I D =24.3-5 - V 1 Repetitve avalanche causes additional power losses that can be calculated as PV =E R *f. 2 Co(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from to 8% V DSS. 3 Co(tr) is a fixed capacitance that gives the same charging time as C oss while V DS is rising from to 8% V DSS. 4 ISD<=ID, di/dt<=2/us, VDClink=4V, Vpeak<VBR, DSS, Tj<Tj,max. Identical low-side and high-side switch. Rev. 2.5 Page 3 29-12-1
SPP24N6C3 Electrical Characteristics, at T j = 25 C, unless otherwise specified Parameter Symbol Conditions Values Unit min. typ. max. Inverse diode continuous I S T C =25 C - - 24.3 forward current Inverse diode direct current, I SM - - 72.9 pulsed Inverse diode forward voltage V SD V GS =V, I F =I S - 1 1.2 V Reverse recovery time t rr V R =48V, I F =I S, - 6 - ns Reverse recovery charge Q rr di F /dt=/µs - 13 - µc Peak reverse recovery current I rrm - 7 - Peak rate of fall of reverse di rr /dt - 14 - /µs recovery current Typical Transient Thermal Characteristics Symbol Value Unit Symbol Value Unit typ. typ. Thermal resistance Thermal capacitance R th1.6524 K/W C th1.4439 Ws/K R th2.13 C th2.1662 R th3.25 C th3.2268 R th4.96 C th4.6183 R th5.117 C th5.14 R th6.53 C th6.4 P tot (t) T j R th1 R th,n Tcase External Heatsink C th1 C th2 C th,n T amb Rev. 2.5 Page 4 29-12-1
SPP24N6C3 1 Power dissipation P tot = f (T C ) 26 SPP24N6C3 W 2 Safe operating area I D = f ( V DS ) parameter : D =, T C =25 C 2 Ptot 22 2 18 16 ID 1 14 12 8 6 4-1 tp =.1 ms tp =.1 ms tp =.1 ms tp = 1 ms DC 2 2 4 6 8 12 C 16 3 Transient thermal impedance Z thjc = f (t p ) parameter: D = t p /T ZthJC K/W -1 T C -2 1 2 V 3 V DS 4 Typ. output characteristic I D = f (V DS ); T j =25 C parameter: t p = µs, V GS ID 8 7 6 Vgs = 2V Vgs = 7.5V Vgs = 7V Vgs = 6.5V Vgs = 6V Vgs = 5.5V Vgs = 5V Vgs = 4.5V Vgs = 4V -2-3 D =.5 D =.2 D =.1 D =.5 D =.2 D =.1 single pulse 5 4 3 2-4 -7-6 -5-4 -3 s -1 t p Rev. 2.5 Page 5 4 8 12 16 2 V 26 V DS 29-12-1
SPP24N6C3 5 Typ. output characteristic I D = f (V DS ); T j =15 C parameter: t p = µs, V GS 6 Typ. drain-source on resistance R DS(on) =f(i D ) parameter: T j =15 C, V GS ID 5 4 35 3 Vgs = 2V Vgs = 6.5V Vgs = 6V Vgs = 5.5V Vgs = 5V Vgs = 4.5V Vgs = 4V R DS(on) 1 Ω.8.7 Vgs = 4V Vgs = 4.5V Vgs = 5V Vgs = 5.5V Vgs = 6V Vgs = 6.5V Vgs = 2V 25.6 2.5 15.4 5.3 4 8 12 16 2 V 26 V DS 7 Drain-source on-state resistance R DS(on) = f (T j ) parameter : I D = 15.4, V GS = V Ω 1 SPP24N6C3.2 5 15 2 25 3 35 4 5 I D 8 Typ. transfer characteristics I D = f ( V GS ); V DS 2 x I D x R DS(on)max parameter: t p = µs Tj = 25 C Tj = 15 C.8 8 RDS(on).7.6 ID 7 6.5 5.4 4.3 3.2.1 98% typ 2-6 -2 2 6 C 18 T j Rev. 2.5 Page 6 1 2 3 4 5 6 7 8 V V GS 29-12-1
SPP24N6C3 9 Typ. gate charge V GS = f (Q Gate ) parameter: I D = 24.3 pulsed 16 SPP24N6C3 V Forward characteristics of body diode I F = f (V SD ) parameter: T j, tp = µs 2 SPP24N6C3 12 VGS.2 V DS max IF 1.8 V DS max 8 6 4 2 T j = 25 C typ T j = 15 C typ T j = 25 C (98%) T j = 15 C (98%) 2 4 6 8 12 14 nc 17 Q Gate 11 valanche SO I R = f (t R ) par.: T j 15 C 28-1.4.8 1.2 1.6 2 2.4 V 3 V SD 12 valanche energy E S = f (T j ) par.: I D =, V DD = 5 V.9 mj.7 IR 2 ES.6 16.5 12 Tj (STRT) =25 C.4 8 4 Tj (STRT) =125 C.3.2.1-3 -2-1 1 2 µs 4 t R Rev. 2.5 Page 7 25 5 75 C 15 T j 29-12-1
SPP24N6C3 13 Drain-source breakdown voltage V (BR)DSS = f (T j ) 72 SPP24N6C3 14 valanche power losses P R = f (f ) parameter: E R =1mJ V W V(BR)DSS 68 66 64 PR 6 62 4 6 58 2 56 54-6 -2 2 6 C 18 T j 3 4 5 Hz 6 f 15 Typ. capacitances C = f (V DS ) parameter: V GS =V, f=1 MHz 5 pf 4 Ciss Coss Crss 16 Typ. C oss stored energy E oss =f(v DS ) 28 µj 2 C 3 Eoss 16 2 12 8 1 4 2 3 4 V 6 2 3 4 V 6 V DS V DS Rev. 2.5 Page 8 29-12-1
SPP24N6C3 Definition of diodes switching characteristics Rev. 2.5 Page 9 29-12-1
SPP24N6C3 PG-TO-22-3-1 Rev. 2.5 Page 29-12-1
SPP24N6C3 Rev. 2.5 Page 11 29-12-1