SPP8N6S2L7 SPB8N6S2L7 OptiMOS PowerTransistor Feature NChannel Enhancement mode Logic Level 175 C operating temperature valanche rated dv/dt rated Product Summary V DS 55 V R DS(on) 7 mω 8 P TO263 32 P TO22 31 Type Package Ordering Code SPP8N6S2L7 P TO22 31 Q674S4285 SPB8N6S2L7 P TO263 32 Q674S4288 Marking 2N6L7 2N6L7 Maximum Ratings, at T j = 25 C, unless otherwise specified Parameter Symbol Value Unit Continuous drain current 1) T C =25 C 8 8 Pulsed drain current puls 32 T C =25 C valanche energy, single pulse E S 45 mj =8, V DD =25V, R GS =25Ω Repetitive avalanche energy, limited by T jmax 2) E R 21 Reverse diode dv/dt dv/dt 6 kv/µs I S =8, V DS =44V, di/dt=2/µs, T jmax =175 C Gate source voltage V GS ±2 V Power dissipation P tot 21 W T C =25 C Operating and storage temperature T j, T stg 55... +175 C IEC climatic category; DIN IEC 681 55/175/56 Page 1 2359
Thermal Characteristics SPP8N6S2L7 SPB8N6S2L7 Parameter Symbol Values Unit Characteristics min. typ. max. Thermal resistance, junction case R thjc.46.7 K/W Thermal resistance, junction ambient, leaded R thj 62 SMD version, device on PCB: @ min. footprint @ 6 cm 2 cooling area 3) R thj Electrical Characteristics, at T j = 25 C, unless otherwise specified Parameter Symbol Values Unit Static Characteristics Drainsource breakdown voltage V GS =V, =1m 62 4 min. typ. max. V (BR)DSS 55 V Gate threshold voltage, V GS = V DS V GS(th) 1.2 1.6 2 =15µ Zero gate voltage drain current SS µ V DS =55V, V GS =V, T j =25 C.1 1 V DS =55V, V GS =V, T j =125 C 1 1 Gatesource leakage current I GSS 1 1 n V GS =2V, V DS =V Drainsource onstate resistance R DS(on) 7.1 1 mω V GS =4.5V, =6 Drainsource onstate resistance R DS(on) 5.6 7 V GS =1V, =6 1Current limited by bondwire ; with an R thjc =.7K/W the chip is able to carry = 121 at 25 C, for detailed information see app.note NPS71E available at www.infineon.com/optimos 2Defined by design. Not subject to production test. 3Device on 4mm*4mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 7 µm thick) copper area for drain connection. PCB is vertical without blown air. Page 2 2359
Electrical Characteristics SPP8N6S2L7 SPB8N6S2L7 Parameter Symbol Conditions Values Unit Dynamic Characteristics Transconductance g fs V DS 2* *R DS(on)max, =8 Input capacitance C iss V GS =V, V DS =25V, min. typ. max. 52 14 S 316 421 pf Output capacitance C oss f=1mhz 74 99 Reverse transfer capacitance C rss 21 31 Turnon delay time t d(on) V DD =3V, V GS =1V, 18 27 ns Rise time t r =8, 35 52 Turnoff delay time t R G =2Ω d(off) 28 42 Fall time t f 31 47 Gate Charge Characteristics Gate to source charge Q gs V DD =44V, =8 11 14 nc Gate to drain charge Q gd 32 48 Gate charge total Q g V DD =44V, =8, V GS = to 1V 95 13 Gate plateau voltage V (plateau) V DD =44V, =8 3.5 V Reverse Diode Inverse diode continuous forward current I S T C =25 C 8 Inv. diode direct current, pulsed I SM 32 Inverse diode forward voltage V SD V GS =V, I F =8.9 1.3 V Reverse recovery time t rr V R =3V, I F =l S, 59 75 ns Reverse recovery charge Q rr di F /dt=1/µs 8 1 nc Page 3 2359
SPP8N6S2L7 SPB8N6S2L7 1 Power dissipation P tot = f (T C ) parameter: V GS 4 V 24 SPP8N6S2L7 W 2 18 2 Drain current = f (T C ) parameter: V GS 1 V 9 SPP8N6S2L7 7 P tot 16 14 ID 6 5 12 1 4 8 3 6 4 2 2 1 2 4 6 8 1 12 14 16 C 19 T C 2 4 6 8 1 12 14 16 C 19 T C 3 Safe operating area = f ( V DS ) parameter : D =, T C = 25 C 1 3 SPP8N6S2L7 t p = 1.µs 4 Max. transient thermal impedance Z thjc = f (t p ) parameter : D = tp/t 1 1 K/W 1 SPP8N6S2L7 ID 1 2 R DS(on) = V DS / 1 µs ZthJC 1 1 1 2 D =.5 1 ms.2 1 1 1 3.1 1 4 single pulse.5.2.1 1 V V DS Page 4 1 1 1 1 1 1 2 1 5 1 7 1 6 1 5 1 4 1 3 1 2 s 1 t p 2359
SPP8N6S2L7 SPB8N6S2L7 5 Typ. output characteristic = f (V DS ); T j =25 C parameter: t p = 8 µs 19 SPP8N6S2L7 Ptot = 21W 16 14 12 1 8 6 4 2 h V GS [V].5 1 1.5 2 2.5 3 3.5 4 V 5 V DS 7 Typ. transfer characteristics g = f ( V GS ); V DS 2 x x R DS(on)max parameter: t p = 8 µs 16 f e c a d b a 3. b 3.2 c 3.5 d 3.8 e 4. f 4.5 g 5. h 1. 6 Typ. drainsource on resistance R DS(on) = f ( ) parameter: V GS R DS(on) mω 24 SPP8N6S2L7 2 18 16 14 12 1 8 6 4 2 V GS [V] = c d 3.5 3.8 e 4. f 4.5 c g 5. h 1. 2 4 6 8 12 8 Typ. forward transconductance g fs = f( ); T j =25 C parameter: g fs 11 S d e h f g 9 12 8 1 gfs 7 8 6 5 6 4 4 3 2 2 1.5 1 1.5 2 2.5 3 3.5 4 V 5 V GS 2 4 6 8 11 Page 5 2359
SPP8N6S2L7 SPB8N6S2L7 9 Drainsource onstate resistance R DS(on) = f (T j ) parameter : = 6, V GS = 1 V 26 SPP8N6S2L7 mω 1 Typ. gate threshold voltage V GS(th) = f (T j ) parameter: V GS = V DS 2 V 22 2 1.6 75 µ R DS(on) 18 16 V GS(th) 1.4 1.2 15 µ 14 12 1 1 8 98%.8.6 6 4 2 typ.4.2 6 2 2 6 1 14 C 2 T j 11 Typ. capacitances C = f (V DS ) parameter: V GS =V, f=1 MHz 1 4 6 2 2 6 1 C 18 T j 12 Forward character. of reverse diode I F = f (V SD ) parameter: T j, tp = 8 µs 1 3 SPP8N6S2L7 pf C iss 1 2 C IF 1 3 C oss C rss 1 1 T j = 25 C typ T j = 175 C typ T j = 25 C (98%) T j = 175 C (98%) 1 2 5 1 15 2 V 3 V DS Page 6 1.4.8 1.2 1.6 2 2.4 V 3 V SD 2359
SPP8N6S2L7 SPB8N6S2L7 13 Typ. avalanche energy E S = f (T j ) par.: ID = 8, V DD = 25 V, R GS = 25 Ω 45 mj 14 Typ. gate charge V GS = f (Q Gate) parameter: ID = 8 pulsed 16 SPP8N6S2L7 V 35 12 E S 3 25 2 VGS 1 8,2 V DS max,8 V DS max 15 6 1 4 5 2 25 5 75 1 125 C 175 T j 2 4 6 8 1 12 nc 15 Q Gate 15 Drainsource breakdown voltage V (BR)DSS = f (T j ) parameter: ID=1 m 66 SPP8N6S2L7 V V(BR)DSS 62 6 58 56 54 52 5 6 2 2 6 1 14 C 2 T j Page 7 2359
SPP8N6S2L7 SPB8N6S2L7 Published by Infineon Technologies G, Bereichs Kommunikation St.MartinStrasse 53, D81541 München Infineon Technologies G 1999 ll Rights Reserved. ttention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of noninfringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in lifesupport devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that lifesupport device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Further information Please notice that the part number is BSPP8N6S2L7 and BSPB8N6S2L7, for simplicity the device is referred to by the term SPP8N6S2L7 and SPB8N6S2L7 throughout this documentation. Page 8 2359