AO46 Complementary Enhancement Mode Field Effect Transistor General Description The AO46 uses advanced trench technology MOSFETs to provide excellent and low gate charge. The complementary MOSFETs may be used in inverter and other applications. Features n-channel p-channel V DS (V) = 3V -3V I D = 7.A (V GS =V) -.3A (V GS = -V) < 4mΩ (V GS =V) < 3mΩ (V GS = -V) < 36mΩ (V GS =4.V) < mω (V GS = -4.V) % UIS tested % Rg tested SOIC-8 Top View Bottom View Top View D D S G S G 8 7 3 6 4 D D D D G S G S Pin n-channel p-channel Absolute Maximum Ratings T A = unless otherwise noted Parameter Symbol Max n-channel Max p-channel Units Drain-Source Voltage 3-3 V Gate-Source Voltage Continuous Drain Current F V DS V GS I D Pulsed Drain Current B I DM 64 T A = P D Power Dissipation F Avalanche Current B T A = T A =7 C T A =7 C I AR E AR Junction and Storage Temperature Range T J, T STG - to - to C ± 7. 6. ± -.3-4. -4.44.44 9 7 Repetitive avalanche energy.3mh B 43 V A W A mj Thermal Characteristics: n-channel and p-channel Parameter Maximum Junction-to-Ambient A t s Maximum Junction-to-Ambient A Steady-State Maximum Junction-to-Lead C Steady-State Maximum Junction-to-Ambient A t s Maximum Junction-to-Ambient A Steady-State Maximum Junction-to-Lead C Steady-State Symbol Device Typ Max Units n-ch 6. C/W R θja n-ch 8 C/W R θjl n-ch 3 4 C/W p-ch 6. C/W R θja p-ch 8 C/W R θjl p-ch 3 4 C/W www.aosmd.com
AO46 N-CHANNEL Electrical Characteristics (T J = unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BV DSS Drain-Source Breakdown Voltage I D =µa, V GS =V 3 V V DS =3V, V GS =V I DSS Zero Gate Voltage Drain Current µa T J = C I GSS Gate-Body leakage current V DS =V, V GS = ±V na V GS(th) Gate Threshold Voltage V DS =V GS I D =µa...6 V I D(ON) On state drain current V GS =V, V DS =V 64 A Static Drain-Source On-Resistance V GS =V, I D =7.A V GS =4.V, I D =A 7.7 4 T J = 3 4.8 36 mω g FS Forward Transconductance V DS =V, I D =7.A S V SD Diode Forward Voltage I S =A,V GS =V.74 V I S Maximum Body-Diode Continuous Current. A I SM Pulsed Body-Diode Current B 64 A DYNAMIC PARAMETERS C iss Input Capacitance 373 448 pf C oss Output Capacitance V GS =V, V DS =V, f=mhz 67 pf C rss Reverse Transfer Capacitance 4 pf R g Gate resistance V GS =V, V DS =V, f=mhz.8.8 Ω SWITCHING PARAMETERS Q g (V) Total Gate Charge 7. nc Q g (4.V) Total Gate Charge 3. nc V GS =V, V DS =V, I D =7.A Q gs Gate Source Charge.3 nc Q gd Gate Drain Charge.7 nc t D(on) Turn-On DelayTime 4. ns t r Turn-On Rise Time V GS =V, V DS =V, R L =.Ω,.7 ns t D(off) Turn-Off DelayTime R GEN =3Ω 4.9 ns t f Turn-Off Fall Time.9 ns t rr Body Diode Reverse Recovery Time I F =7.A, di/dt=a/µs..6 ns Q rr Body Diode Reverse Recovery Charge I F =7.A, di/dt=a/µs 4. nc A: The value of R θja is measured with the device mounted on in FR-4 board with oz. Copper, in a still air environment with T A =. The value in any given application depends on the user's specific board design. The current rating is based on the t s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θja is the sum of the thermal impedence from junction to lead R θjl and lead to ambient. D. The static characteristics in Figures to 6 are obtained using <3 µs pulses, duty cycle.% max. E. These tests are performed with the device mounted on in FR-4 board with oz. Copper, in a still air environment with T A =. The SOA curve provides a single pulse rating. F.The power dissipation and current rating are based on the t s thermal resistance rating. Rev 8: May mω COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. www.aosmd.com
AO46 N-CHANNEL TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 6 V V 6V V DS =V V DS =V I D (A) 4 3 6V V GS =3.V 4.V I D (A) 9 6 3 3 4 Fig : On-Region Characteristics.. 3 3. 4 4. V GS (Volts) Figure : Transfer Characteristics 4.8 (mω) 4 3 3 V GS =4.V V GS =4.V V GS =V V GS =V Normalized On-Resistance.6.4..8 V GS =V Id=7.7A V GS =4.V Id=A I D (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage.6 7 7 Temperature ( C) Figure 4: On-Resistance vs. Junction Temperature 6 I D =7.A I D =7.7A.E+.E+ 4.E-.E- 3 COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED..E-3 AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE..E-4 4 6 8.E-...4.6.8. V GS (Volts) Figure : On-Resistance vs. Gate-Source Voltage V SD (Volts) Figure 6: Body-Diode Characteristics (mω) I S (A)
AO46 N-CHANNEL TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 8 V DS V=V DS =V I D =7.7A I D =7.A 6 V GS (Volts) 6 4 Capacitance (pf) 4 3 C oss C oss C iss 4 6 8 Q g (nc) Figure 7: Gate-Charge Characteristics C rss C rss 3 Figure 8: Capacitance Characteristics I D (Amps).... limited T J(Max) = C T A = DC µs µs ms ms.s s Power (W) 3 T J(Max) = C T A =... Figure 9: Maximum Forward Biased Safe Operating Area (Note E)... Pulse Width (s) Figure : Single Pulse Power Rating Junction-to- Ambient (Note E) Z θja Normalized Transient Thermal Resistance COMPONENTS. IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Single Pulse. D=T on /T T J,PK =T A +P DM.Z θja.r θja R θja = C/W In descending order D=.,.3,.,.,.,., single pulse..... Pulse Width (s) Figure : Normalized Maximum Transient Thermal Impedance
AO46 P-CHANNEL Electrical Characteristics (T J = unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BV DSS Drain-Source Breakdown Voltage I D =-µa, V GS =V -3 V I DSS V DS =-3V, V GS =V - T J = C - I GSS Gate-Body leakage current V DS =V, V GS =±V ± na V GS(th) Gate Threshold Voltage V DS =V GS I D =-µa -.3 -.8 -.4 V I D(ON) On state drain current V GS =-V, V DS =-V -4 A Zero Gate Voltage Drain Current Static Drain-Source On-Resistance V GS =-V, I D =-.3A V GS =-4.V, I D =-4.A T J = 3. 3 3 33 mω g FS Forward Transconductance V DS =-V, I D =-.3A 9 S V SD Diode Forward Voltage I S =-A,V GS =V -.8 - V I S Maximum Body-Diode Continuous Current -3. A I SM Pulsed Body-Diode Current B -4 A DYNAMIC PARAMETERS C iss Input Capacitance 76 pf C oss Output Capacitance V GS =V, V DS =-V, f=mhz 4 pf C rss Reverse Transfer Capacitance 9 pf R g Gate resistance V GS =V, V DS =V, f=mhz 3. Ω SWITCHING PARAMETERS Q g (V) Total Gate Charge (V) 3.6 6 nc Q g (4.V) Total Gate Charge (4.V) 6.7 nc V GS =-V, V DS =-V, I D =-.3A Q gs Gate Source Charge. nc Q gd Gate Drain Charge 3. nc t D(on) Turn-On DelayTime 8 ns t r Turn-On Rise Time V GS =-V, V DS =-V, R L =.8Ω, 6 ns t D(off) Turn-Off DelayTime R GEN =3Ω 7 ns t f Turn-Off Fall Time ns t rr Body Diode Reverse Recovery Time I F =-.3A, di/dt=a/µs ns Q rr Body Diode Reverse Recovery Charge I F =-.3A, di/dt=a/µs 9.7 nc A: The value of R θja is measured with the device mounted on in FR-4 board with oz. Copper, in a still air environment with T A =. The value in any given application depends on the user's specific board design. The current rating is based on the t s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θja is the sum of the thermal impedence from junction to lead R θjl and lead to ambient. D. The static characteristics in Figures to 6 are obtained using <3 µs pulses, duty cycle.% max. E. These tests are performed with the device mounted on in FR-4 board with oz. Copper, in a still air environment with T A =. The SOA curve provides a single pulse rating. F.The current rating is based on the t s thermal resistance rating. Rev8: May µa mω COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
AO46 P-CHANNEL TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 4 3 3 -V -6V -V -4.V -4V 3 V DS =-V -I D (A) -3.V V GS =-3V -I D (A) 3 4 - Fig : On-Region Characteristics.. 3 3. 4 4. -V GS (Volts) Figure : Transfer Characteristics V GS =-4.V.8 (mω) 4 4 3 3 V GS =-4.V V GS =-V V GS =-V Normalized On-Resistance.6.4. I D =-4.A V GS =-V I D =-.3A I D =-.6A V GS =-4.V I D =-4.A -I D (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage.8 7 7 Temperature ( C) Figure 4: On-Resistance vs. Junction Temperature 8 I D =-.6A I D =-.3A.E+.E+ (mω) 6 4 -I S (A).E+.E-.E-.E-3.E-4 4 6 8 -V GS (Volts) Figure : On-Resistance vs. Gate-Source Voltage.E-...4.6.8.. -V SD (Volts) Figure 6: Body-Diode Characteristics
AO46 P-CHANNEL TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 8 V DS =-V I D =-.3A C iss -V GS (Volts) 6 4 Capacitance (pf) 8 6 4 C oss 4 6 8 4 Q g (nc) Figure 7: Gate-Charge Characteristics. µs 3 C rss 3 - Figure 8: Capacitance Characteristics I D (Amps).... limited T J(Max) = C T A = s.s DC µs ms ms.. Figure 9: Maximum Forward Biased Safe Operating Area (Note E) Power (W) T J(Max) = C T A =... Pulse Width (s) Figure : Single Pulse Power Rating Junction-to- Ambient (Note E) Z θja Normalized Transient Thermal Resistance. D=T on /T T J,PK =T A +P DM.Z θja.r θja R θja = C/W In descending order D=.,.3,.,.,.,., single pulse P D T on T Single Pulse..... Pulse Width.(s) Figure : Normalized Maximum Transient Thermal Impedance