V DSS 40 V V GS Max ± 6 V R DS(on) max (@V GS = V) 56 mω G 3 D PD - 96309A HEXFET Power MOSFET R DS(on) max (@V GS = 4.5V) Application(s) Load/ System Switch DC Motor Drive 78 mω S 2 Micro3 TM (SOT-23) Features and Benefits Features ORDERING INFORMATION: See detailed ordering and shipping information on the last page of this data sheet. Benefits Low R DS(on) ( 56mΩ) Lower switching losses Industry-standard pinout Multi-vendor compatibility Compatible with existing Surface Mount Techniques results in Easier manufacturing RoHS compliant containing no lead, no bromide and no halogen Environmentally friendly MSL, Consumer qualification Increased reliability Absolute Maximum Ratings Symbol Parameter Max. Units V DS Drain-Source Voltage 40 V I D @ T A = 25 C Continuous Drain Current, V GS @ V 3.6 I D @ T A = 70 C Continuous Drain Current, V GS @ V 2.9 A I DM Pulsed Drain Current 5 P D @T A = 25 C Maximum Power Dissipation.3 P D @T A = 70 C Maximum Power Dissipation 0.8 W Linear Derating Factor 0.0 W/ C V GS Gate-to-Source Voltage ± 6 V T J, T STG Junction and Storage Temperature Range -55 to + 50 C Thermal Resistance Symbol Parameter Typ. Max. Units R θja Junction-to-Ambient e R θja Junction-to-Ambient (t<s) f 99 Notes through are on page www.irf.com C/W 02/29/2
Electric Characteristics @ T J = 25 C (unless otherwise specified) Symbol Parameter Min. Typ. Max. Units Conditions V (BR)DSS Drain-to-Source Breakdown Voltage 40 V V GS = 0V, I D = 250μA ΔV (BR)DSS /ΔT J Breakdown Voltage Temp. Coefficient 0.04 V/ C R DS(on) Static Drain-to-Source On-Resistance 44 56 62 78 mω V GS(th) Gate Threshold Voltage.0.8 2.5 V I DSS 20 Drain-to-Source Leakage Current 250 I GSS Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage - μa na R G Internal Gate Resistance. Ω gfs Forward Transconductance 6.2 S Q g Total Gate Charge 2.6 3.9 Q gs Gate-to-Source Charge 0.7 nc Q gd Gate-to-Drain ("Miller") Charge.4 t d(on) Turn-On Delay Time 5. t r Rise Time 5.4 t d(off) Turn-Off Delay Time 6.4 ns t f Fall Time 4.3 C iss Input Capacitance 266 C oss Output Capacitance 49 pf C rss Reverse Transfer Capacitance 29 Source - Drain Ratings and Characteristics Symbol Parameter Min. Typ. Max. Units I S Continuous Source Current.3 I SM (Body Diode) A Pulsed Source Current 5 (Body Diode)Ãc V SD Diode Forward Voltage.2 V t rr Reverse Recovery Time ns Q rr Reverse Recovery Charge 9.3 nc Reference to 25 C, I D = ma V GS = V, I D = 3.6A d V GS = 4.5V, I D = 2.9A d V DS = V GS, I D = 25μA V DS = 40V, V GS = 0V V DS = 40V, V GS = 0V, T J = 25 C V GS = 6V V GS = -6V V DS = V, I D = 3.6A I D = 3.6A V DS = 20V V GS = 4.5V d V DD = 20V I D =.0A R G = 6.8 Ω V GS = 4.5V V GS = 0V V DS = 25V ƒ =.0MHz Conditions MOSFET symbol D showing the G integral reverse S p-n junction diode. T J = 25 C, I S =.3A, V GS = 0V d T J = 25 C, V R = 32V, I F =.3 A di/dt = A/μs d 2 www.irf.com
I D, Drain-to-Source Current (A) R DS(on), Drain-to-Source On Resistance (Normalized) I D, Drain-to-Source Current (A) I D, Drain-to-Source Current (A) VGS TOP V 7.0V 6.0V 4.5V 4.0V 3.5V 3.0V BOTTOM 2.5V VGS TOP V 7.0V 6.0V 4.5V 4.0V 3.5V 3.0V BOTTOM 2.5V 0. 2.5V 0.0 60μs PULSE WIDTH Tj = 25 C 0.00 0. V DS, Drain-to-Source Voltage (V) 2.5V 60μs PULSE WIDTH Tj = 50 C 0. 0. V DS, Drain-to-Source Voltage (V) Fig. Typical Output Characteristics Fig 2. Typical Output Characteristics V DS = 25V 60μs PULSE WIDTH 2.0 I D = 3.6A V GS = V.5 T J = 50 C T J = 25 C.0 0. 2.0 3.0 4.0 5.0 V GS, Gate-to-Source Voltage (V) 0.5-60 -40-20 0 20 40 60 80 20 40 60 T J, Junction Temperature ( C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com 3
I SD, Reverse Drain Current (A) I D, Drain-to-Source Current (A) C, Capacitance (pf) V GS, Gate-to-Source Voltage (V) 00 0 V GS = 0V, f = MHZ C iss = C gs + C gd, C ds SHORTED C rss = C gd C oss = C ds + C gd 4 2 I D = 3.6A V DS = 32V V DS = 20V VDS= 8V 8 C iss 6 C oss 4 C rss 2 0 0 2 3 4 5 6 7 V DS, Drain-to-Source Voltage (V) Q G, Total Gate Charge (nc) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage OPERATION IN THIS AREA LIMITED BY R DS (on) μsec T J = 50 C T J = 25 C V GS = 0V 0. 0.3 0.5 0.7 0.9. V SD, Source-to-Drain Voltage (V) 0. 0.0 T A = 25 C Tj = 50 C Single Pulse msec msec 0 V DS, Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 4 www.irf.com
I D, Drain Current (A) 4.2 V DS R D 3.6 3 R G V GS D.U.T. + - V DD 2.4 V GS.8 Pulse Width µs Duty Factor 0. %.2 Fig a. Switching Time Test Circuit 0.6 0 25 50 75 25 50 T A, Ambient Temperature ( C) Fig 9. Maximum Drain Current Vs. Ambient Temperature V DS 90% % V GS t d(on) t r t d(off) t f Fig b. Switching Time Waveforms 0 Thermal Response ( Z thja ) C/W D = 0.50 0.20 0. 0.05 0.02 0.0 0. 0.0 SINGLE PULSE ( THERMAL RESPONSE ) Notes:. Duty Factor D = t/t2 2. Peak Tj = P dm x Zthja + T A 0.00 E-006 E-005 0.000 0.00 0.0 0. t, Rectangular Pulse Duration (sec) Fig. Typical Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com 5
R DS(on), Drain-to -Source On Resistance (m Ω) R DS (on), Drain-to -Source On Resistance (mω) 60 I D = 3.6A 250 40 200 20 50 80 60 T J = 25 C Vgs = 4.5V Vgs = V 40 T J = 25 C 50 20 2 4 6 8 2 4 6 0 0 5 5 20 25 30 35 V GS, Gate -to -Source Voltage (V) I D, Drain Current (A) Fig 2. Typical On-Resistance Vs. Gate Voltage Fig 3. Typical On-Resistance Vs. Drain Current Current Regulator Same Type as D.U.T. V GS Q GS Q G Q GD 2V.2μF 50KΩ.3μF D.U.T. + V - DS V G V GS 3mA Charge I G I D Current Sampling Resistors Fig 4a. Basic Gate Charge Waveform Fig 4b. Gate Charge Test Circuit 6 www.irf.com
V GS(th), Gate threshold Voltage (V) Power (W) 2.5 2.0 80 60.5.0 I D = 25uA I D = 250uA 40 20 0.5-75 -50-25 0 25 50 75 25 50 T J, Temperature ( C ) 0 E-005 0.000 0.00 0.0 0. Time (sec) Fig 5. Typical Threshold Voltage Vs. Junction Temperature Fig 6. Typical Power Vs. Time www.irf.com 7
Micro3 (SOT-23) Package Outline Dimensions are shown in millimeters (inches) 5 6 B 6 A 5 D 3 E E 0.5 [0.006] M CBA 2 e e H 4 L c A A2 A NOTES: Recommended Footprint 0.972 C 0. [0.004] C 3X b 0.20 [0.008] M C B A DIMENSIONS SYMBOL MILLIMETERS INCHES MIN MAX MIN MAX A 0.89.2 A 0.0 0. 0.0004 A2 0.88.02 b 0.30 0.50 c 0.08 0.20 D 2.80 3.04 E 2. 2.64 E.20.40 e 0.95 BSC %6& e.90 BSC %6& L 0.40 0.60 L 0.54 REF REF L2 0.25 BSC BSC 0 8 0 8 L2 0.802 0.950 2.742 3X L 7 Micro3 (SOT-23/TO-236AB) Part Marking Information Notes: This part marking information applies to devices produced after 02/26/200.900. DIMENSIONING & TOLERANCING PER ANSI Y4.5M-994 2. DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES]. 3. CONTROLLING DIMENSION: MILLIMETER. 4. DATUM PLANE H IS LOCATED AT THE MOLD PARTING LINE. 5. DATUM A AND B TO BE DETERMINED AT DATUM PLANE H. 6. DIMENSIONS D AND E ARE MEASURED AT DATUM PLANE H. DIMENSIONS DOES NOT INCLUDE MOLD PROTRUSIONS OR INTERLEAD FLASH. MOLD PROTRUSIONS OR INTERLEAD FLASH SHALL NOT EXCEED 0.25 MM [0.0 INCH] PER SIDE. 7. DIMENSION L IS THE LEAD LENGTH FOR SOLDERING TO A SUBSTRATE. 8. OUTLINE CONFORMS TO JEDEC OUTLINE TO-236 AB. DATE CODE PART NUMBER Cu WIRE LOT CODE HALOGEN FREE X = PART NUMBER CODE REFERENCE: A = IRLML2402 S = IRLML6244 B = IRLML2803 T = IRLML6246 C = IRLML6302 U = IRLML6344 D = IRLML53 V = IRLML6346 E = IRLML6402 W = IRFML8244 F = IRLML640 X = IRLML2244 G = IRLML2502 H = IRLML5203 I = IRLML0030 J = IRLML2030 K = IRLML0 L = IRLML0060 M = IRLML0040 N = IRLML2060 P = IRLML930 R = IRLML9303 Y = IRLML2246 Z = IRFML9244 Note: A line above the work week (as shown here) indicates Lead - Free. LEAD FREE DATE CODE MARKING INSTRUCTIONS WW = (-26) IF PRECEDED BY LAST DIGIT OF CALENDAR YEAR WORK YEAR Y WEEK W 20 200 202 2002 203 2003 204 2004 205 2005 206 2006 207 2007 208 2008 209 2009 2020 20 2 3 4 5 6 7 8 9 0 0 02 03 04 24 25 26 WW = (27-52) IF PRECEDED BY A LETTER YEAR Y 20 200 A 202 2002 B 203 204 2003 2004 C D 205 206 207 2005 2006 2007 E F G 208 209 2008 2009 H J 2020 20 K WORK WEEK 27 A 28 B 29 C 30 D 50 5 52 A B C D X Y Z W X Y Z Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/ 8 www.irf.com
Micro3 (SOT-23) Tape & Reel Information Dimensions are shown in millimeters (inches) 2.05 (.080 ).95 (.077 ) 4. (.6 ) 3.9 (.54 ).6 (.062 ).5 (.060 ).85 (.072 ).65 (.065 ).32 (.05 ).2 (.045 ) TR 3.55 (.39 ) 3.45 (.36 ) 8.3 (.326 ) 7.9 (.32 ) FEED DIRECTION 4. (.6 ) 3.9 (.54 ). (.043 ) 0.9 (.036 ) 0.35 (.03 ) 0.25 (.0 ) 78.00 ( 7.008 ) MAX. 9.90 (.390 ) 8.40 (.33 ) NOTES:. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-48 & EIA-54. Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/ www.irf.com 9
Standard Pack Orderable part number Package Type Form Quantity Micro3 (SOT-23) Tape and Reel 3000 Note Qualification information Qualification level Moisture Sensitivity Level RoHS compliant Cons umer (per JE DE C JE S D47F guidelines ) MS L Micro3 (SOT-23) (per IPC/JE DE C J-S T D-020D ) Yes Qualification standards can be found at International Rectifier s web site http://www.irf.com/product-info/reliability Higher qualification ratings may be available should the user have such requirements. Please contact your International Rectifier sales representative for further information: http://www.irf.com/whoto-call/salesrep/ Applicable version of JEDEC standard at the time of product release. Notes: Repetitive rating; pulse width limited by max. junction temperature. Pulse width 400μs; duty cycle 2%. ƒ Surface mounted on in square Cu board Refer to application note #AN-994. Data and specifications subject to change without notice. IR WORLD HEADQUARTERS: N.Sepulveda blvd, El Segundo, California 90245, USA Tel: (3) 252-75 TAC Fax: (3) 252-7903 Visit us at www.irf.com for sales contact information.02/202 www.irf.com