Speed TEMPFET NChannel Enhancement mode Logic Level Input nalog driving possible Fast switching up to MHz 7 VPT5754 7 VPT567 Potentialfree temperature sensor with thyristor characteristics Overtemperature protection valanche rated High current pinning 7 Type V DS R DS(on) Package Ordering Code BTS 8 Z 49 V 6.5 m PTO73 Q676S64 PTO78 Q676S65 PTO73 Q676S67 D Pin 4 and TB G Pin Pin 3 Temperature Sensor K Pin 5 S Pin + 6 + 7 Pin Symbol Function S Source G Gate 3 node Temperature Sensor 4 D Drain 5 K Cathode Temperature Sensor 6 S Source 7 S Source 9
Maximum Ratings Parameter Symbol Value Unit Drain source voltage V DS 49 V Draingate voltage, R GS = k V DGR 49 Gate source voltage V GS Nominal load current (ISO 483) V GS = 4.5 V, V DS.5 V, T C = 85 C V GS = V, V DS.5 V, T C = 85 C Continuous drain current ) T C = C, V GS = 4.5V I D(ISO) I D 8 36 5 Pulsed drain current I D puls 3 valanche energy, single pulse E S J I D = 36, R GS = 5 Power dissipation P tot 3 W T C = 5 C Operating temperature ) T j 4...+75 C Peak temperature ( single event ) T jpeak Storage temperature T stg 55... +5 DIN humidity category, DIN 4 4 E IEC climatic category; DIN IEC 68 4/5/56 current limited by bond wire Note: Thermal trip temperature of temperature sensor is below 75 C 9
Thermal Characteristics Parameter Symbol Values Unit min. typ. max. Characteristics junction case: R thjc.5 K/W Thermal resistance @ min. footprint R th(j) 6 Thermal resistance @ 6 cm cooling area ) R th(j) 33 4 Electrical Characteristics Parameter Symbol Values Unit at T j = 5 C, unless otherwise specified min. typ. max. Static Characteristics Drainsource breakdown voltage V (BR)DSS 49 V V GS = V, I D =.5 m Gate threshold voltage, V GS = V DS I D = 4 µ V GS(th)..6 Zero gate voltage drain current V DS = 45 V, V GS = V, T j = 4 C V DS = 45 V, V GS = V, T j = 5 C V DS = 45 V, V GS = V, T j = 5 C I DSS µ.. Gatesource leakage current V GS = V, V DS = V, T j = 5 C I GSS n V GS = V, V DS = V, T j = 5 C DrainSource onstate resistance V GS = 4.5 V, I D = 36 V GS = V, I D = 36 R DS(on) 8. 5.8 9.5 6.5 m Device on 5mm*5mm*.5mm epoxy PCB FR4 with 6cm (one layer, 7µm thick) copper area for drain connection. PCB mounted vertical without blown air. 3 9
Electrical Characteristics Parameter Symbol Values Unit at T j = 5 C, unless otherwise specified min. typ. max. Dynamic Characteristics Forward transconductance V DS >*I D *R DS(on)max, I D = 8 Input capacitance V GS = V, V DS = 5 V, f = MHz Output capacitance V GS = V, V DS = 5 V, f = MHz Reverse transfer capacitance V GS = V, V DS = 5 V, f = MHz Turnon delay time V DD = 3 V, V GS = 4.5 V, I D = 8, R G =.3 Rise time V DD = 3 V, V GS = 4.5 V, I D = 8, R G =.3 Turnoff delay time V DD = 3 V, V GS = 4.5 V, I D = 8, R G =.3 Fall time V DD = 3 V, V GS = 4.5 V, I D = 8, R G =.3 g fs 3 7 S C iss 385 48 pf C oss 9 357 C rss 57 75 t d(on) 3 45 ns t r 37 56 t d(off) 7 5 t f 36 55 Gate Charge Characteristics Gate charge at threshold V DD = 4 V, ID=,, V GS = to V Gate charge at 5. V V DD = 4 V, I D = 8, V GS = to 5 V Gate charge total V DD = 4 V, I D = 8, V GS = to V Gate plateau voltage V DD = 4 V, I D = 8 Q g(th) 3.8 5.7 nc Q g(5) 9 38 Q g(total) 55 3 V (plateau) 3.4 V 4 9
Electrical Characteristics Parameter Symbol Values Unit at T j = 5 C, unless otherwise specified min. typ. max. Reverse Diode Inverse diode continuous forward current I S 8 T C = 5 C Inverse diode direct current,pulsed I FM 3 T C = 5 C Inverse diode forward voltage V SD.5.6 V V GS = V, I F = 95 Reverse recovery time t rr 5 57 ns V R = 3 V, I F =I S, di F /dt = /µs Reverse recovery charge Q rr.3.47 µc V R = 3 V, I F =I S, di F /dt = /µs Sensor Characteristics For temperature sensing, i.e. temperature protection, please consider application note "Temperature sense concept Speed TEMPFET. For short circuit protection please consider application note "Short circuit behaviour of the Speed TEMPFET family. ll application notes are available at http://www.infineon.com/tempfet/ Forward voltage I K(on) = 5 m, T j = 4...+5 C I K(on) =.5 m, T j = 5 C Sensor override t P = µs, T j = 4...+5 C Forward current T j = 4...+5 C Sensor override t P = µs, T j = 4...+5 C V K(on) V.3.4.9 I K(on) 5 m 6 5 9
Electrical Characteristics Parameter Symbol Values Unit at T j = 5 C, unless otherwise specified min. typ. max. Sensor Characteristics Temperature sensor leakage current I K(off) 4 µ T j = 5 C Min. reset pulse duration ) t reset µs T j = 4...+5 C, I K(on) =.3 m, V K(Reset) <.5V V K Recovery time )) T j = 4...+5 C, I K(on) =.3 m t recovery 5 Characteristics Holding current, V K(off) = 5V T j = 5 C T j = 5 C Thermal trip temperature V TS = 5V Turnoff time (Pin G+ and K+S connected) V TS = 5V, I TS(on) = m Reset voltage T j = 4...+5 C I K(hold) m.5.5.5.3 T TS(on) 5 6 7 C t off.5.5 µs V K(reset).5 V Sensor recovery behaviour: Sensor RESET V K [V ] t reset 5 4 Sensor t recovery ON Reset OFF See diagram Sensor recovery behaviour Time after reset pulse until VK reaches 4V again 6 9
Maximum allowable power dissipation P tot = f(t C ) Drain current I D = f(t C ); V GS 4.5V 35 W 75 5 5 8 7 Ptot ID 6 75 5 5 5 4 3 75 5 5 4 4 8 C 8 4 6 8 4 C 8 T C T C 3 Typ. transient thermal impedance Z thj =f(t p ) @ 6 cm cooling area Parameter: D=t p /T 4 Transient thermal impedance Z thjc = f (t p ) parameter : D = t p /T ZthJ K/W D=.5...5.. ZthJC K/W D=.5...5.. Single pulse 3 Single pulse 5 4 3 s 3 t p 4 8 7 6 5 4 3 s 3 tp 7 9
5 Safe operating area I D =f(v DS ); D=.; T C =5 C; V GS =4.5V 6 Typ. output characteristic I D = f(v DS ); T j =5 C Parameter: V GS 3 Rdson=Vds/Id 3µs µs 6 V 7V 6V 5V 4 4.5V ID ms ID ms ms 8 6 4V 3.5V DC 4 3V V 7 Onstate resistance R ON = f(t j ); I D =36; V GS = 4.5V V DS V 4 V DS 8 Onstate resistance R ON = f(t j ); I D =36; V GS = V m max. m 4 max. 6 RDS(on) 4 typ. RDS(on) 8 typ. 8 6 6 4 4 5 5 5 5 75 5 C 75 T j 5 5 5 5 75 5 C 75 T j 8 9
9 Typ. transfer characteristics I D = f(v GS ); V DS = V; T j = 5 C Typ. input threshold voltage V GS(th) = f(tj); V DS =V GS Parameter: I D 5.4 V ID 9 8 7 6 5 VGS(th)..8.6.4...8 4m 4m.4m 4µ 4 3.6.4...5..5..5 3. 3.5 4. V 5.. 5 5 5 5 75 5 C 75 V GS T j Typ. capacitances C = f(v DS ); V GS = V, f= MHz nf Typ. reverse diode forward charcteristics I F = f(v SD ) t p = 8µs (spread); Parameter: T j 3 5 C C IF Ciss 5 C Coss Crss 5 5 5 3 V 4 V DS...4.6.8. V.4 V SD 9 9
3 Typ. gate charge V GS = f(q Gate ) Parameter: I D puls = 8 BTS 8 Z 6 V 4 Drainsource break down voltage V (BR)DSS = f(t j ) 58 V 56 VGS 8, V DS max,8 V DS max V(BR)DSS 55 54 53 5 5 6 5 49 4 48 47 46 4 8 6 nc 4 Q Gate 45 5 5 5 5 75 5 C 75 Tj 9
Package Ordering Code Package Ordering Code PTO73 Q676S64 PTO78 Q676S65 9.9 9.5 3.7.3 4.4 9.9 8 7.5 6.6 B.3 +....4 4.4 5.6.8.6.7.8 6 x.7 = 7.6 8.6. ) 3.3.4 ) shear and punch direction no burrs this surface 9. 3.9 8.4.5 GPT567 ±.5.5 6.5 (.3).6 +..3....5.5 ).7.5 6 x.7 = 7.6.5 M B ±. 3.6.5 ±.4 9. +.5 ) Shear and punch direction no burrs this surface Back side, heatsink contour ll metal surfaces tin plated, except area of cut 5 +3. B (4.) Package PTO73 Ordering Code Q676S67 9
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