Cool MOS Power Transistor New revolutionary high voltage technology Ultra low gate charge Periodic avalanche proved Extreme dv/dt rated Optimized capacitances Improved noise immunity Former development designation: SPPx4N6S5/SPBx4N6S5 D,2 G, S,3 CO LMOS Power Semiconductors Type V DS I D R DS(on) Package Marking Ordering Code 6 V 3.2.4 Ω P-TO22-3- P-TO263-3-2 Maximum Ratings, at T j = 25 C, unless otherwise specified 3N6S5 3N6S5 Q674-S484 Q674-S497 Parameter Symbol Value Unit Continuous drain current I D T C = 25 C T C = C 3.2 2 Pulsed drain current, t p = ms ) I D puls 5.7 T C = 25 C valanche energy, single pulse E S mj I D = 3.2, V DD = 5 V, R GS = 25 Ω Periodic avalanche energy E R only limited by T jmax Reverse diode dv/dt I S = 3.2, V DS <V DSS, di/dt = /µs, dv/dt 6 kv/µs T jmax = 5 C Gate source voltage V GS ±2 V Power dissipation T C = 25 C P tot 38 C Operating and storage temperature T j, T stg -55...+5 C Semiconductor Group
Electrical Characteristics Parameter Symbol Values Unit at T j = 25 C, unless otherwise specified min. typ. max. Thermal Characteristics Thermal resistance, junction - case R thjc - - 3.3 K/W Thermal resistance, junction - ambient (Leaded and through-hole packages) R thj - - 62 SMD version, device on PCB: @ min. footprint @ 6 cm 2 cooling area 2) R thj - - 62-35 - Static Characteristics Drain- source breakdown voltage V GS = V, I D =.25 m Gate threshold voltage, V GS = V DS I D = 35 µ, T j = 25 C Zero gate voltage drain current, V DS =V DSS V GS = V, T j = 25 C V GS = V, T j = 5 C Gate-source leakage current V GS = 2 V, V DS = V Drain-Source on-state resistance V GS = V, I D = 2 V (BR)DSS 6 - - V V GS(th) 3.5 4.5 5.5 I DSS µ -.5 - - 7 I GSS - - n R DS(on) -.26.4 Ω current limited by Tjmax 2 Device on 5mm*5mm*.5mm epoxy PCB FR4 with 6 cm2 (one layer, 7µm thick) copper area for drain connection. PCB is vertical without blown air. Semiconductor Group 2
Electrical Characteristics Parameter Symbol Values Unit at T j = 25 C, unless otherwise specified min. typ. max. Characteristics Transconductance g fs -.8 - S V DS 2*I D *R DS(on)max, I D = 2 Input capacitance C iss - 44 pf V GS = V, V DS = 25 V, f = MHz Output capacitance C oss - 23 V GS = V, V DS = 25 V, f = MHz Reverse transfer capacitance C rss - 2 V GS = V, V DS = 25 V, f = MHz Turn-on delay time t d(on) - 4 ns V DD = 35 V, V GS = V, I D = 3.2, R G = 2 Ω Rise time t r - 3 - V DD = 35 V, V GS = V, I D = 3.2, R G = 2 Ω Turn-off delay time t d(off) - 6 V DD = 35 V, V GS = V, I D = 3.2, R G = 2 Ω Fall time V DD = 35 V, V GS = V, I D = 3.2, R G = 2 Ω t f - 3 - Semiconductor Group 3
Electrical Characteristics Parameter Symbol Values Unit at T j = 25 C, unless otherwise specified min. typ. max. Gate Charge Characteristics Gate-source charge Q gs - 3 - nc I D = 3.2, V DD = 35 V Gate-drain charge Q gd - 7.5 - I D = 3.2, V DD = 35 V Total gate charge V DD = 35 V, I D = 3.2, V GS = to V Q g - 2.8 - Reverse Diode Inverse diode continuous forward current T C = 25 C Inverse diode direct current,pulsed T C = 25 C Inverse diode forward voltage V GS = V, I F = 3.2 Reverse recovery time V R = 35 V, I F =I S, di F /dt = /µs Reverse recovery charge V R = 35 V, I F =l S, di F /dt = /µs I S - - 3.2 I SM - - 5.7 V SD -.2 V t rr - - ns Q rr - 2.3 - µc Semiconductor Group 4
Power Dissipation P tot = f (T C ) 4 W 32 28 Preliminary data Drain current I D = f (T C ) parameter: V GS V 3.4 2.8 2.4 Ptot 24 ID 2. 2.6 6.2 2 8.8 4.4 2 4 6 8 2 C 6. 2 4 6 8 2 C 6 5 T j Safe operating area I D =f (T C ) parameter: D=., T C =25 C t p = 6.µs Transient thermal impedance Z thjc = f(t P ) Parameter: D=t P /T ID R DS(on) = V DS / I D µs ZthJC K/W - DC ms ms - D=.5 D=.2 D=. D=.5 D=.2 D=. single pulse -2 2 V 3 V DS -2-5 -4-3 -2 - s t p Semiconductor Group 5
Typ. output characteristic I D = f(v DS ); T j =25 C Parameter: V GS 8.5 7. 7V 3V V Preliminary data Drain-source on-resistance R DS(on) = f (T j ) parameter : I D = 2, V GS = V 5.5 Ω 4.5 ID 6. 5. 9V RDS(on) 4. 3.5 3. 4. 3. 2.5 2. 98% typ 2.. 7V.5..5. 4 8 2 6 2 V 26 V DS Typ. transfer characteristics I D = f ( V GS ) parameter: t p = 8 µs V DS 2 x I D x R DS(on)max. -6-2 2 6 C 8 T j Typ. capacitances C = f(v DS ) Parameter: V GS = V, f= MHz 4 pf 8 7 3 Ciss ID 6 C 2 5 Coss 4 3 Crss 2 2 4 6 8 2 4 6 V 2 V GS - 2 3 4 5 6 7 8 V V DS Semiconductor Group 6
Gate threshold voltage V GS(th) = f (T j ) parameter: V GS = V DS, I D = 35 µ 7 Preliminary data valanche Energy E S = f (T j ) parameter: I D = 3.2, V DD = 5 V R GS = 25 Ω 2 V mj VGS(th) 5 4 98% ES 8 typ. 6 3 2 2% 4 2-6 -2 2 6 C 8 T j Forward characteristics of reverse diode I F = f (V SD ) parameter: T j, tp = 8 µs 2 4 6 8 2 C 6 T j Drain-source break down voltage V (BR)DSS =f (T j ) 7 V 66 IF V(BR)DSS 64 62 6 - T j = 25 C typ T j = 5 C typ T j = 25 C (98%) T j = 5 C (98%) 58 56 54 52-2..4.8.2.6 2. 2.4 V 3. V SD 5-6 -2 2 6 C 8 T j Semiconductor Group 7
Typ. gate charge V GS = f (Q Gate ) parameter: I Dpuls = 3.2 6 Preliminary data V 2,2 V DS max,8 V DS max VGS 8 6 4 2 2 4 6 8 2 4 6 nc 2 Q g Semiconductor Group 8
P-TO22-3- dimensions [mm] symbol min max 9.7.3 B 4.88 5.95 C.65.86 D 3.55 3.89 E 2.6 3. F 6. 6.8 G 3. 4. H 4.35 4.75 K.38.65 L.95.32 M 2.54 typ. N 4.3 4.5 P.7.4 T 2.3 2.72 Semiconductor Group 9
P-TO22-3 SMD dimensions [mm] symbol min max 9.8.2 B.7.3 C..6 D.3.7 E F.65 2.54 typ..85 G H 4.3 5.8 typ. 4.5 K.7.37 L 9.5 9.45 M 2.3 2.5 N P. 5 typ..2 Q 4.2 5.2 R S 2.4 8 max 3. T.4.6 U V W X Y Z.8.5 6.23 4.6 9.4 6.5 Semiconductor Group
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