BSO6NS OptiMOS Power-Transistor Feature Dual N-Channel Enhancement mode Logic Level 5 C operating temperature valanche rated dv/dt rated Product Summary V DS 55 V R DS(on) 35 mω I D 5 P-DSO-8-7 Type Package Ordering Code BSO6NS P-DSO-8-7 Q676-S739 Marking N6L Maximum Ratings, at T j = 5 C, unless otherwise specified Parameter Symbol Value Unit Continuous drain current T =5 C, one channel active T =7 C, one channel active Pulsed drain current, one channel active I D puls I D 5 T =5 C valanche energy, single pulse E S 9 mj I D =5, V DD =5V, R GS =5Ω Reverse diode dv/dt dv/dt 6 kv/µs I S =5, V DS =V, di/dt=/µs, T jmax =5 C Gate source voltage V GS ± V Power dissipation, one channel active P tot W T =5 C Operating and storage temperature T j, T stg -55... +5 C IEC climatic category; DIN IEC 68-55/5/56 Page 3--8
BSO6NS Thermal Characteristics Parameter Symbol Values Unit min. typ. max. Characteristics Thermal resistance, junction - soldering point R thjs - 3 5 K/W SMD version, device on PCB: @ min. footprint ; t s @ 6 cm cooling area ) ; t s R thj - - - - 6.5 Electrical Characteristics, at T j = 5 C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Static Characteristics Drain-source breakdown voltage V (BR)DSS 55 - - V V GS =V, I D =m Gate threshold voltage, V GS = V DS V GS(th)..6 I D =3µ Zero gate voltage drain current V DS =55V, V GS =V, T j =5 C V DS =55V, V GS =V, T j =5 C I DSS µ - -. Gate-source leakage current I GSS - n V GS =V, V DS =V Drain-source on-state resistance R DS(on) - 38 mω V GS =.5V, I D =.5 Drain-source on-state resistance R DS(on) - 3 35 V GS =V, I D =.5 Device on mm*mm*.5mm epoxy PCB FR with 6cm² (one layer, 7 µm thick) copper area for drain connection. PCB is vertical without blown air. Page 3--8
BSO6NS Electrical Characteristics Parameter Symbol Conditions Values Unit min. typ. max. Dynamic Characteristics Transconductance g fs V DS * I D * 6.7 3. - S R DS(on)max =.V, I D =5 Input capacitance C iss V GS =V, V DS =5V, - 656 87 pf Output capacitance C oss f=mhz - 5 5 Reverse transfer capacitance C rss - 9 75 Turn-on delay time t d(on) V DD =7.5V, V GS =.5V, - 9 ns Rise time t r I D =5, - 8 3 Turn-off delay time t d(off) R G =75Ω - 5 78 Fall time t f - 8 Gate Charge Characteristics Gate to source charge Q gs V DD =V, I D =5-3 nc Gate to drain charge Q gd - 6.6 Gate charge total Q g V DD =V, I D =5, - 9.7 6 V GS = to V Gate plateau voltage V (plateau) V DD =V, I D =5 -.9 - V Reverse Diode Inverse diode continuous I S T =5 C - - 5 forward current Inv. diode direct current, pulsed I SM - - Inverse diode forward voltage V SD V GS =V, I F =5 -.9.3 V Reverse recovery time t rr V R =7.5V, I F =l S, - 3 ns Reverse recovery charge Q di F /dt=/µs rr - 3 3 nc Page 3 3--8
BSO6NS Power dissipation P tot = f (T ) parameter: V GS 6 V. BSO6NS W thjc thj R Drain current I D = f (T ) parameter: V GS V 5.5 BSO6NS.8.6.5 Ptot. ID 3.5. 3.5.8.6.5...5 6 8 C 6 T 6 8 C 6 T 3 Safe operating area I D = f ( V DS ) parameter : D =, T = 5 C BSO6NS R DS(on) = V DS / I D t p = 6.µs µs Max. transient thermal impedance Z thjc = f (t p ) parameter : D = t p /T K/W BSO6NS ID ZthJC ms ms - D =.5. -. - DC -3.5. single pulse. - - V V DS Page - -7-6 -5 - -3 - s t p 3--8
BSO6NS 5 Typ. output characteristic 6 Typ. drain-source on resistance I D = f (V DS ); T j =5 C R DS(on) = f (I D ) parameter: t p = 8 µs parameter: V GS BSO6NS h P tot = W BSO6NS mω ID 9 8 7 6 g f e d c V GS [V] a 3. b 3. c 3. d 3.6 e 3.8 f. g.5 h. RDS(on) 9 8 7 6 c d f e 5 b 5 g 3 a 3 h V GS [V] = c 3. d 3.6 e 3.8 f. g.5 h..5.5.5 3 3.5 V 5 V DS 7 Typ. transfer characteristics I D = f ( V GS ); V DS x I D x R DS(on)max parameter: t p = 8 µs 3 5 6 7 8 I D 8 Typ. forward transconductance g fs = f(i D ); T j =5 C parameter: g fs S ID 6 gfs 8 6 8 6 8 6.5.5.5 3 V V GS 6 8 6 I D Page 5 3--8
BSO6NS 9 Drain-source on-state resistance R DS(on) = f (T j ) parameter : I D =.5, V GS = V BSO6NS mω Typ. gate threshold voltage V GS(th) = f (T j ) parameter: V GS = V DS.5 9 V RDS(on) 8 7 VGS(th).5 5 µ 6 3 µ 5 98% 3 typ.5-6 - 6 C 8 T j -6-6 C 8 T j Typ. capacitances C = f (V DS ) parameter: V GS =V, f= MHz Forward character. of reverse diode I F = f (V SD ) parameter: T j, tp = 8 µs BSO6NS pf 3 C iss C IF C oss C rss T j = 5 C typ T j = 5 C typ T j = 5 C (98%) T j = 5 C (98%) 5 5 V 3 V DS Page 6 -..8..6. V 3 V SD 3--8
BSO6NS 3 Typ. avalanche energy E S = f (T j ) par.: I D = 5, V DD = 5 V, R GS = 5 Ω 9 mj Typ. gate charge V GS = f (Q Gate) parameter: I D = 5 pulsed 6 BSO6NS V 7 ES 6 5 VGS 8, V DS max,8 V DS max 3 6 5 5 65 85 5 5 5 C 85 T j 8 6 nc 3 Q Gate 5 Drain-source breakdown voltage V (BR)DSS = f (T j ) parameter: I D = m 66 BSO6NS V V(BR)DSS 6 6 58 56 5 5 5-6 - 6 C 8 T j Page 7 3--8
BSO6NS Published by Infineon Technologies G, Bereichs Kommunikation St.-Martin-Strasse 53, D-85 München Infineon Technologies G 999 ll Rights Reserved. ttention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Further information Please notice that the part number is BBSO6NS, for simplicity the device is referred to by the term BSO6NS throughout this documentation. Page 8 3--8