SPPN6C3, SPBN6C3 SPN6C3 Cool MOS Power Transistor V DS @ T jmax 65 V Feature R DS(on).95 Ω New revolutionary high voltage technology Ultra low gate charge I D.5 Periodic avalanche rated Extreme dv/dt rated High peak current capability Improved transconductance PTO33: Fully isolated package (5 VC; minute) PTO33 PTO633 PTO3 3 PTO33 Type Package Ordering Code SPPN6C3 PTO3 Q67S366 SPBN6C3 PTO633 Q67S7 SPN6C3 PTO33 Q67S3 Marking N6C3 N6C3 N6C3 Maximum Ratings Parameter Symbol Value Unit Continuous drain current T C = 5 C T C = C I D SPP_B SP.5.5 ).8.8 ) Pulsed drain current, t p limited by T jmax I D puls 3.5 3.5 valanche energy, single pulse E S 3 3 mj I D =3., V DD =5V valanche energy, repetitive t R limited by T ) jmax E R.. I D =.5, V DD =5V valanche current, repetitive t R limited by T jmax I R.5.5 Gate source voltage static V GS ± ± V Gate source voltage C (f >Hz) V GS ±3 ±3 Power dissipation, T C = 5 C P tot 5 3 W Operating and storage temperature T j, T stg 55...+5 C Page 3
SPPN6C3, SPBN6C3 SPN6C3 Maximum Ratings Parameter Symbol Value Unit Drain Source voltage slope dv/dt 5 V/ns V DS = 8 V, I D =.5, T j = 5 C Thermal Characteristics Parameter Symbol Values Unit min. typ. max. Thermal resistance, junction case R thjc.5 K/W Thermal resistance, junction case, FullPK R thjc_fp Thermal resistance, junction ambient, leaded R thj 6 Thermal resistance, junction ambient, FullPK R thj_fp 8 SMD version, device on PCB: R thj @ min. footprint @ 6 cm cooling area 3) 35 6 Soldering temperature, T sold 6 C.6 mm (.63 in.) from case for s ) Electrical Characteristics, at T j =5 C unless otherwise specified Parameter Symbol Conditions Values Unit min. typ. max. Drainsource breakdown voltage V (BR)DSS V GS =V, I D =.5m 6 V DrainSource avalanche breakdown voltage V (BR)DS V GS =V, I D =.5 7 Gate threshold voltage V GS(th) I D =µ, V GS =V DS. 3 3.9 Zero gate voltage drain current I DSS V DS =6V, V GS =V, T j =5 C T j =5 C Gatesource leakage current I GSS V GS =3V, V DS =V n Drainsource onstate resistance R DS(on) V GS =V, I D =.8 T j =5 C T j =5 C.5.85.3 Gate input resistance R G f=mhz, open drain.95 5.95 µ Ω Page 3
SPPN6C3, SPBN6C3 SPN6C3 Electrical Characteristics Parameter Symbol Conditions Values Unit min. typ. max. Transconductance g fs V DS *I D *R DS(on)max,. S I D =.8 Input capacitance C iss V GS =V, V DS =5V, 9 pf Output capacitance C oss f=mhz 6 Reverse transfer capacitance C rss 5 Effective output capacitance, 5) energy related Effective output capacitance, 6) time related C o(er) V GS =V, V DS =V to 8V C o(tr) 35 Turnon delay time t d(on) V DD =38V, V GS =/V, 6 ns Rise time t r I D =.5,.5 Turnoff delay time t d(off) R G =8Ω 58.5 8 Fall time t f 9.5 Gate Charge Characteristics Gate to source charge Q gs V DD =8V, I D =.5. nc Gate to drain charge Q gd 8.8 Gate charge total Q g V DD =8V, I D =.5, 9 5 V GS = to V Gate plateau voltage V (plateau) V DD =8V, I D =.5 5 V Limited only by maximum temperature Repetitve avalanche causes additional power losses that can be calculated as PV =ER*f. 3 Device on mm*mm*.5mm epoxy PCB FR with 6cm² (one layer, 7 µm thick) copper area for drain connection. PCB is vertical without blown air. Soldering temperature for TO63: C, reflow 5 Co(er) is a fixed capacitance that gives the same stored energy as C oss while V DS is rising from to 8% V DSS. 6 Co(tr) is a fixed capacitance that gives the same charging time as C oss while V DS is rising from to 8% V DSS. Page 3 3
SPPN6C3, SPBN6C3 SPN6C3 Electrical Characteristics Parameter Symbol Conditions Values Unit min. typ. max. Inverse diode continuous I S T C =5 C.5 forward current Inverse diode direct current, I SM 3.5 pulsed Inverse diode forward voltage V SD V GS =V, I F =I S. V Reverse recovery time t rr V R =8V, I F =I S, 3 5 ns Reverse recovery charge Q rr di F /dt=/µs.6 µc Peak reverse recovery current I rrm 8 Peak rate of fall of reverse recovery current di rr /dt T j =5 C 9 /µs Typical Transient Thermal Characteristics Symbol Value Unit Symbol Value Unit SPP_B SP SPP_B SP R th.39.39 K/W C th.737.737 Ws/K R th.7.7 C th.83.83 R th3.3.3 C th3.6.6 R th.555.7 C th.5.5 R th5.59.559 C th5.76.5633 R th6.69.53 C th6.9. P tot (t) T j R th R th,n T case External Heatsink C th C th C th,n T amb Page 3
SPPN6C3, SPBN6C3 SPN6C3 Power dissipation P tot = f (T C ) Power dissipation FullPK P tot = f (T C ) 55 SPPN6C3 W W 35 5 5 Ptot 35 3 Ptot 5 5 5 5 5 6 8 C 6 6 8 C 6 T C T C 3 Safe operating area I D = f ( V DS ) parameter : D =, T C =5 C Safe operating area FullPK I D = f (V DS ) parameter: D =, T C = 5 C ID ID tp =. ms tp =. ms tp =. ms tp = ms DC tp =. ms tp =. ms tp =. ms tp = ms tp = ms DC V 3 V DS Page 5 V 3 V DS 3
SPPN6C3, SPBN6C3 SPN6C3 5 Transient thermal impedance Z thjc = f (t p ) parameter: D = t p /T K/W 6 Transient thermal impedance FullPK Z thjc = f (t p ) parameter: D = t p /t K/W ZthJC ZthJC D =.5 D =. D =. D =.5 D =. D =. single pulse D =.5 D =. D =. D =.5 D =. D =. single pulse 3 7 6 5 3 s t p 7 Typ. output characteristic I D = f (V DS ); T j =5 C parameter: t p = µs, V GS 3 7 6 5 3 s t p 8 Typ. output characteristic I D = f (V DS ); T j =5 C parameter: t p = µs, V GS 6 V V 7V 6.5V 8.5 7 6 V 8V 7V 6.5V 6V ID 6V ID 5 5.5V 8 6 5.5V 3 5V 5V.5V.5V V 5 5 V 5 V DS Page 6 V 5 5 V 5 V DS 3
SPPN6C3, SPBN6C3 SPN6C3 9 Typ. drainsource on resistance R DS(on) =f(i D ) parameter: T j =5 C, V GS R DS(on) Ω 8 7 V.5V 5V V 8V 7V 6.5V 6V Drainsource onstate resistance R DS(on) = f (T j ) parameter : I D =.8, V GS = V RDS(on) 5.5 SPPN6C3 Ω.5 3.5 6 5 5.5V 3.5 3.5.5 98% typ 3 5 6 7 9 I D Typ. transfer characteristics I D = f ( V GS ); V DS x I D x R DS(on)max parameter: t p = µs 6 6 6 C 8 T j Typ. gate charge V GS = f (Q Gate ) parameter: I D =.5 pulsed 6 SPPN6C3 V 5 C ID 5 C VGS, V DS max,8 V DS max 8 8 6 6 6 8 6 V V GS Page 7 8 6 nc 3 Q Gate 3
SPPN6C3, SPBN6C3 SPN6C3 3 Forward characteristics of body diode I F = f (V SD ) parameter: T j, tp = µs SPPN6C3 Typ. switching time t = f (I D ), inductive load, T j =5 C par.: V DS =38V, V GS =/+3V, R G =8Ω 9 ns 7 6 IF t T j = 5 C typ 5 3 td(off) tf td(on) tr T j = 5 C typ T j = 5 C (98%) T j = 5 C (98%)..8..6. V 3 V SD 5 Typ. switching time t = f (R G ), inductive load, T j =5 C par.: V DS =38V, V GS =/+3V, I D =.5 5 ns.5.5.5 3 3.5.5 I D 6 Typ. drain current slope di/dt = f(r G ), inductive load, T j = 5 C par.: V DS =38V, V GS =/+3V, I D =.5 /µs t 35 3 di/dt 6 5 5 td(off) tf td(on) tr 8 di/dt(on) 5 di/dt(off) 6 8 6 Ω 9 R G Page 8 6 8 6 Ω R G 3
SPPN6C3, SPBN6C3 SPN6C3 7 Typ. drain source voltage slope dv/dt = f(r G ), inductive load, T j = 5 C par.: V DS =38V, V GS =/+3V, I D =.5 8 Typ. switching losses E = f (I D ), inductive load, T j =5 C par.: V DS =38V, V GS =/+3V, R G =8Ω V/ns 8. mws *) E on includes SDP6S6 diode commutation losses. 7. dv/dt 6 5 dv/dt(on) E.8 Eoff 3.6. Eon* dv/dt(off). 3 6 9 Ω 8 R G 9 Typ. switching losses E = f(r G ), inductive load, T j =5 C par.: V DS =38V, V GS =/+3V, I D =.5.5.5.5 3 3.5.5 I D valanche SO I R = f (t R ) par.: T j 5 C mws. *) E on includes SDP6S6 diode commutation losses. 5.8 T j(strt) =5 C.7 3.5 E.6 IR 3.5 Eoff.5. T j(strt) =5 C.3 Eon*.5...5 6 8 6 Ω R G Page 9 3 µs t R 3
SPPN6C3, SPBN6C3 SPN6C3 valanche energy E S = f (T j ) par.: I D = 3., V DD = 5 V 6 mj Drainsource breakdown voltage V (BR)DSS = f (T j ) 7 SPPN6C3 V ES V(BR)DSS 68 66 8 6 6 6 6 58 56 6 8 C 6 5 6 6 C 8 T j T j 3 valanche power losses P R = f (f ) parameter: E R =.mj W Typ. capacitances C = f (V DS ) parameter: V GS =V, f= MHz pf 5 3 C iss PR 5 C 75 C oss 5 5 C rss 5 Hz 6 f Page 3 V 6 V DS 3
SPPN6C3, SPBN6C3 SPN6C3 5 Typ. C oss stored energy E oss =f(v DS ) 3.5 µj Eoss.5.5.5 3 V 6 V DS Definition of diodes switching characteristics Page 3
SPPN6C3, SPBN6C3 SPN6C3 PTO3 ±. 3.7 ±. B.7±.3. 5.38±.6 ±..8.5 9.98 ±.8 C 5.3 ±.9 3.5 ±.5 3x.75 ±..5 ±..5±..7 ±. x.5.5 M B C ll metal surfaces tin plated, except area of cut. Metal surface min. x=7.5, y=.3 PTO633 (D PK) Page 3
SPPN6C3, SPBN6C3 SPN6C3 PTO33 (FullPK) Please refer to mounting instructions (application note NTO33) Page 3 3
SPPN6C3, SPBN6C3 SPN6C3 Published by Infineon Technologies G, Bereichs Kommunikation St.MartinStrasse 53, D85 München Infineon Technologies G 999 ll Rights Reserved. ttention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of noninfringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in lifesupport devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that lifesupport device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Page 3