SIPMOS SmallSignalTransistor Features PChannel Enhancement mode valanche rated Logic Level dv/dt rated Product Summary Drain source voltage V DS 6 V Drainsource onstate resistance R DS(on) 2 W Continuous drain current I D.33 3 2 VPS56 Type Package Tape and Reel PGSOT23 L6327: 3pcs/r. Marking Ys Pin PIN 2 PIN 3 G S D Maximum Ratings,at T j = 25 C, unless otherwise specified Parameter Symbol Value Unit Continuous drain current T = 25 C T = 7 C I D.33.27 Pulsed drain current T = 25 C valanche energy, single pulse I D =.33, V DD = 25 V, R GS = 25 W I D puls.32 E S valanche energy, periodic limited by T jmax E R.36 Reverse diode dv/dt I S =.33, V DS = 48 V, di/dt = 2 /µs, T jmax = 5 C dv/dt 6 9.5 mj Gate source voltage V GS ±2 V Power dissipation P tot.36 W T = 25 C Operating and storage temperature T j, T stg 55...+5 C IEC climatic category; DIN IEC 68 55/5/56 kv/µs Rev..2 Page 2625
Thermal Characteristics Parameter Symbol Values Unit Characteristics Thermal resistance, junction soldering point ( Pin 3 ) R thjs 5 K/W SMD version, device on PCB: @ min. footprint @ 6 cm 2 cooling area ) R thj 35 3 Electrical Characteristics, at T j = 25 C, unless otherwise specified Parameter Symbol Values Unit Static Characteristics Drain source breakdown voltage V GS = V, I D = 25 µ V (BR)DSS 6 V Gate threshold voltage, V GS = V DS I D = 8 µ Zero gate voltage drain current V DS = 6 V, V GS = V, T j = 25 C V DS = 6 V, V GS = V, T j = 25 C Gatesource leakage current V GS = 2 V, V DS = V Drainsource onstate resistance V GS = 4.5 V, I D =.27 Drainsource onstate resistance V GS = V, I D =.33 V GS(th) I DSS.5 2. I GSS R DS(on) 2 3 W R DS(on).4 2 µ n Device on 4mm*4mm*.5mm epoxy PCB FR4 with 6cm 2 (one layer, 7 µm thick) copper area for drain connection. PCB is vertical without blown air. Rev..2 Page 2 2625
Electrical Characteristics, at T j = 25 C, unless otherwise specified Parameter Symbol Values Unit Dynamic Characteristics Transconductance V DS ³2*I D *R DS(on)max, I D =.27 Input capacitance V GS = V, V DS = 25 V, f = MHz Output capacitance V GS = V, V DS = 25 V, f = MHz Reverse transfer capacitance V GS = V, V DS = 25 V, f = MHz Turnon delay time V DD = 3 V, V GS = 4.5 V, I D =.27, R G = 43 W Rise time V DD = 3 V, V GS = 4.5 V, I D =.27, R G = 43 W Turnoff delay time V DD = 3 V, V GS = 4.5 V, I D =.27, R G = 43 W Fall time V DD = 3 V, V GS = 4.5 V, I D =.27, R G = 43 W g fs.24.47 C iss 62 78 pf C oss 9 24 C rss t d(on) 7 9 S 23 35 ns t r 7 6 t d(off) 56 7 t f 6 76 Rev..2 Page 3 2625
Electrical Characteristics, at T j = 25 C, unless otherwise specified Parameter Symbol Values Unit Dynamic Characteristics Gate to source charge V DD = 48 V, I D =.33 Gate to drain charge V DD = 48, I D =.33 Gate charge total V DD = 48 V, I D =.33, V GS = to V Gate plateau voltage V DD = 48 V, I D =.33 Q gs.2.8 Q gd..65 Q g 2.38 3.57 V (plateau) 2.94 V nc Parameter Symbol Values Unit Reverse Diode Inverse diode continuous forward current I S.33 T = 25 C Inverse diode direct current,pulsed I SM.32 T = 25 C Inverse diode forward voltage V SD.84. V V GS = V, I F =.33 Reverse recovery time t rr 59.4 89 ns V R = 3 V, I F =I S, di F /dt = 8 /µs Reverse recovery charge V R = 3 V, I F =l S, di F /dt = 8 /µs Q rr 37.5 56 nc Rev..2 Page 4 2625
Power Dissipation P tot = f (T ).38 W.32.28 Drain current I D = f (T ) parameter: V GS ³ V.36.28 Ptot.24.24.2.2.6.6.2.2.8.8.4.4. 2 4 6 8 2 C 6. 2 4 6 8 2 C 6 T T Safe operating area I D = f ( V DS ) parameter : D =, T = 25 C Transient thermal impedance Z thjc = f (t p ) parameter : D = t p /T K/W 3 t p = 88.µs R DS(on) = V DS / I D µs ms ZthJC 2 ms D =.5.2. 2 DC single pulse.5.2. 3 V 2 V DS Rev..2 Page 5 5 4 3 2 2 s 4 t p 2625
Typ. output characteristic I D = f (V DS ); T j =25 C parameter: t p = 8 µs.8 P tot = W j ik hg lf e d.6.5.4.3.2. V GS [V] a 2.5 b 3. c 3.5 c d 4. e 4.5 f 5. g 5.5 h 6. i 6.5 j 7. b k 8. l. a Typ. drainsourceonresistance R DS(on) = f (I D ) parameter: V GS RDS(on) 6.5 W 5.5 5. 4.5 4. 3.5 3. 2.5 2..5..5 a V GS [V] = a 2.5 b 3. c 3.5 d 4. b e 4.5 f 5. g 5.5 h 6. i 6.5 c d e l f h i g j k j 7. k l 8.....5..5 2. 2.5 3. 3.5 4. V 5. V DS Typ. transfer characteristics I D = f ( V GS ) V DS ³ 2 x I D x R DS(on)max parameter: t p = 8 µs.2....2.3.4.5.65 I D Typ. forward transconductance g fs = f(i D ); T j =25 C parameter: g fs.7 S..9.8.7 gfs.6.55.5.45.4.6.35.5.3.4.3.2.25.2.5...5... 2. 3. 4. V 6.....2.3.4.5.7 V GS Rev..2 Page 6 2625
Drainsource onstate resistance R DS(on) = f (T j ) parameter : I D =.33, V GS = V 5.5 W 4.5 Gate threshold voltage V GS(th) = f (T j ) parameter: V GS = V DS, I D = 8 µ 3. V RDS(on) 4. 3.5 VGS(th) 2. 98% 3. 2.5 98%.5 typ 2. typ. 2%.5..5.5. 6 2 2 6 C 8 Typ. capacitances C = f (V DS ) parameter: V GS =V, f= MHz 3 T j. 6 2 2 6 C 6 T j Forward characteristics of reverse diode I F = f (V SD ) parameter: T j, tp = 8 µs pf 2 C C iss IF C oss C rss T j = 25 C typ T j = 5 C typ T j = 25 C (98%) T j = 5 C (98%) 5 5 2 25 V 35 V DS Rev..2 Page 7 2..4.8.2.6 2. 2.4 V 3. V SD 2625
valanche energy E S = f (T j ) para.: I D =.33, V DD = 25 V, R GS = 25 mj Typ. gate charge V GS = f (Q Gate ) parameter: I D =.33 pulsed 6 V 8 7 2 ES 6 VGS 5 8 4 6,2 V DS max,8 V DS max 3 2 4 2 25 45 65 85 5 25 C 65 T j..4.8.2.6 2. 2.4 2.8 nc 3.4 Q Gate Drainsource breakdown voltage V (BR)DSS = f (T j ) 72 V V(BR)DSS 68 66 64 62 6 58 56 54 6 2 2 6 C 8 T j Rev..2 Page 8 2625
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