IRLR024N IRLU024N HEXFET Power MOSFET

PD- 9363E IRLR024N IRLU024N HEXFET Power MOSFET Logic-Leve Gate Drive Surface Mount (IRLR024N) Straight Lead (IRLU024N) dvanced Process Technoogy Fast Switching Fuy vaanche Rated G D S V DSS = 55V R DS(on) = 0.065Ω I D = 7 Description Fifth Generation HEXFET Power MOSFETs from Internationa Rectifier utiize advanced processing techniques to achieve the owest possibe onresistance per siicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are we known for, provides the designer with an extremey efficient device for use in a wide variety of appications. The D-PK is designed for surface mounting using vapor phase, infrared, or wave sodering techniques. The straight ead version (IRFU series) is for through-hoe mounting appications. Power dissipation eves up to.5 watts are possibe in typica surface mount appications. bsoute Maximum Ratings Parameter Max. Units I D @ T C = 25 C Continuous Drain Current, V GS @ 0V 7 I D @ T C = 00 C Continuous Drain Current, V GS @ 0V 2 I DM Pused Drain Current 72 P D @T C = 25 C Power Dissipation 45 W Linear Derating Factor 0.3 W/ C V GS Gate-to-Source Votage ± 6 V E S Singe Puse vaanche Energy 68 mj I R vaanche Current E R Repetitive vaanche Energy 4.5 mj dv/dt Peak Diode Recovery dv/dt ƒ 5.0 V/ns T J Operating Junction and -55 to 75 T STG Storage Temperature Range Sodering Temperature, for 0 seconds 300 (.6mm from case ) C Therma Resistance Parameter Typ. Max. Units R θjc Junction-to-Case 3.3 R θj Case-to-mbient (PCB mount)** 50 C/W R θj Junction-to-mbient 0 ** When mounted on " square PCB (FR-4 or G-0 Materia ). For recommended footprint and sodering techniques refer to appication note #N-994 D-Pak I-Pak IRLR024N IRLU024N www.irf.com 2/0/00

Eectrica Characteristics @ T J = 25 C (uness otherwise specified) Parameter Min. Typ. Max. Units Conditions V (BR)DSS Drain-to-Source Breakdown Votage 55 V V GS = 0V, I D = 250µ V (BR)DSS/ T J Breakdown Votage Temp. Coefficient 0.06 V/ C Reference to 25 C, I D = m 0.065 V GS = 0V, I D = 0 R DS(on) Static Drain-to-Source On-Resistance 0.080 Ω V GS = 5.0V, I D = 0 0.0 V GS = 4.0V, I D = 9.0 V GS(th) Gate Threshod Votage.0 2.0 V V DS = V GS, I D = 250µ g fs Forward Transconductance 8.3 S V DS = 25V, I D = I DSS Drain-to-Source Leakage Current 25 V DS = 55V, V GS = 0V µ 250 V DS = 44V, V GS = 0V, T J = 50 C I GSS Gate-to-Source Forward Leakage 00 V GS = 6V n Gate-to-Source Reverse Leakage -00 V GS = -6V Q g Tota Gate Charge 5 I D = Q gs Gate-to-Source Charge 3.7 nc V DS = 44V Q gd Gate-to-Drain ("Mier") Charge 8.5 V GS = 5.0V, See Fig. 6 and 3 t d(on) Turn-On Deay Time 7. V DD = 28V t r Rise Time 74 I ns D = t d(off) Turn-Off Deay Time 20 R G = 2Ω, V GS = 5.0V t f Fa Time 29 R D = 2.4Ω, See Fig. 0 L D Interna Drain Inductance 4.5 nh Between ead, 6mm (0.25in.) L S Interna Source Inductance 7.5 G from package and center of die contact C iss Input Capacitance 480 V GS = 0V C oss Output Capacitance 30 pf V DS = 25V C rss Reverse Transfer Capacitance 6 ƒ =.0MHz, See Fig. 5 D S Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions D I S Continuous Source Current MOSFET symbo 7 (Body Diode) showing the G I SM Pused Source Current integra reverse 72 (Body Diode) p-n junction diode. S V SD Diode Forward Votage.3 V T J = 25 C, I S =, V GS = 0V t rr Reverse Recovery Time 60 90 ns T J = 25 C, I F = Q rr Reverse RecoveryCharge 30 200 nc di/dt = 00/µs t on Forward Turn-On Time Intrinsic turn-on time is negigibe (turn-on is dominated by L S L D ) Notes: Repetitive rating; puse width imited by max. junction temperature. (See fig. ) V DD = 25V, starting T J = 25 C, L = 790µH R G = 25Ω, I S =. (See Figure 2) ƒ I SD, di/dt 290/µs, V DD V (BR)DSS, T J 75 C Puse width 300µs; duty cyce 2%. This is appied for I-PK, L S of D-PK is measured between ead and center of die contact Uses IRLZ24N data and test conditions. 2 www.irf.com

I D, Drain-to-Source Current () 00 0 VGS TOP 5V 2V 0V 8.0V 6.0V 4.0V 3.0V BOTTOM 2.5V 2.5V 20µs PULSE WIDTH 0. T J = 25 C 0. 0 00 V DS, Drain-to-Source Votage (V) I D, Drain-to-Source Current () 00 0 VGS TOP 5V 2V 0V 8.0V 6.0V 4.0V 3.0V BOTTOM 2.5V 2.5V 20µs PULSE W IDTH 0. T J = 75 C 0. 0 00 V DS, Drain-to-Source Votage (V) Fig. Typica Output Characteristics Fig 2. Typica Output Characteristics I D, Drain-to-Source Current () 00 0 T = 25 C J V DS= 5V 20µs PULSE W IDTH 0. 2 3 4 5 6 7 8 9 0 V GS T = 75 C J, Gate-to-Source Votage (V) R DS(on), D rain-to-source O n R esistance (Normaized) 3.0 2.5 2.0.5.0 0.5 I D = 7 8 V GS = 0V 0.0-60 -40-20 0 20 40 60 80 00 20 40 60 80 T J, Junction Temperature ( C) Fig 3. Typica Transfer Characteristics Fig 4. Normaized On-Resistance Vs. Temperature www.irf.com 3

C, Capacitance (pf) 800 600 400 200 C iss C oss C rss V GS = 0V, f = MHz C iss = C gs C gd, C ds SHORTED C rss = C gd C oss = C ds C gd V GS, Gate-to-Source Votage (V) 5 2 9 6 3 I D = V DS V DS = 44V = 28V 0 0 00 V DS, Drain-to-Source Votage (V) FOR TEST CIRCUIT 0 SEE FIGURE 3 0 4 8 2 6 20 Q G, Tota Gate Charge (nc) Fig 5. Typica Capacitance Vs. Drain-to-Source Votage Fig 6. Typica Gate Charge Vs. Gate-to-Source Votage I SD, Reverse Drain C urrent () 00 0 T = 75 C J T = 25 C J I D, Drain Current () 000 00 0 OPERTION IN THIS RE LIMITED BY R DS(on) 0µs 00µs V GS = 0V 0.4 0.8.2.6 2.0 V SD, Source-to-Drain Votage (V) T C = 25 C ms T J = 75 C Singe Puse 0ms 0 00 V DS, Drain-to-Source Votage (V) Fig 7. Typica Source-Drain Diode Forward Votage Fig 8. Maximum Safe Operating rea 4 www.irf.com

20 V DS R D I D, Drain Current () 5 0 5 Fig 0a. Switching Time Test Circuit V DS 90% R G V GS 5V Puse Width µs Duty Factor 0. % D.U.T. - V DD 0 25 50 75 00 25 50 75 T, Case Temperature ( C C) Fig 9. Maximum Drain Current Vs. Case Temperature 0% V GS t d(on) t r t d(off) t f Fig 0b. Switching Time Waveforms 0 Therma Response (Z thjc ) 0. D = 0.50 0.20 0.0 0.05 0.02 0.0 SING LE PULSE (THERML RESPONSE) Notes:. Duty factor D = t / t 2 2. Peak T J = P DMx Z thjc T C 0.0 0.0000 0.000 0.00 0.0 0. t, Rectanguar Puse Duration (sec) P DM t t 2 Fig. Maximum Effective Transient Therma Impedance, Junction-to-Case www.irf.com 5

R G V DS 20V tp Fig 2a. Uncamped Inductive Test Circuit tp L D.U.T I S 0.0Ω 5V DRIVER V (BR)DSS - V DD E S, Singe Puse vaanche Energy (mj) 40 20 00 80 60 40 20 I D TOP 4.5 7.8 BOTTOM V 0 DD = 25V 25 50 75 00 25 50 75 Starting T J, Junction Temperature ( C) Fig 2c. Maximum vaanche Energy Vs. Drain Current I S Fig 2b. Uncamped Inductive Waveforms Current Reguator Same Type as D.U.T. 50KΩ Q G 2V.2µF.3µF 0 V Q GS Q GD D.U.T. V - DS V G V GS 3m Charge I G I D Current Samping Resistors Fig 3a. Basic Gate Charge Waveform Fig 3b. Gate Charge Test Circuit 6 www.irf.com

Peak Diode Recovery dv/dt Test Circuit D.U.T ƒ - Circuit Layout Considerations Low Stray Inductance Ground Pane Low Leakage Inductance Current Transformer - - R G dv/dt controed by R G Driver same type as D.U.T. I SD controed by Duty Factor "D" D.U.T. - Device Under Test - V DD Driver Gate Drive Period P.W. D = P.W. Period V GS =0V * D.U.T. I SD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. V DS Waveform Diode Recovery dv/dt V DD Re-ppied Votage Inductor Curent Body Diode Forward Drop Rippe 5% I SD * V GS = 5V for Logic Leve Devices Fig 4. For N-Channe HEXFET MOSFETs www.irf.com 7

D-Pak (TO-252) Package Outine Dimensions are shown in miimeters (inches) 5.46 (.25) 5.2 (.205) 6.73 (.265) 6.35 (.250) - -.27 (.050) 0.88 (.035) 2.38 (.094) 2.9 (.086).4 (.045) 0.89 (.035) 0.58 (.023) 0.46 (.08) 4.02 (.040).64 (.025) 2 3 6.22 (.245) 5.97 (.235) 0.42 (.40) 9.40 (.370) 6.45 (.245) 5.68 (.224) LED SSIGNMENTS - G TE.52 (.060).5 (.045) 2X.4 (.045) 0.76 (.030) 3X - B - 0.89 (.035) 0.64 (.025) 0.25 (.00) M M B 0.5 (.020) M IN. 0.58 (.023) 0.46 (.08) 2 - D R IN 3 - S O U R CE 4 - D R IN 2.28 (.090) 4.57 (.80) NOTES: DIMENSIONING & TOLERNCING PER NSI Y4.5M, 982. 2 CONTROLLING DIMENSION : INCH. 3 C O N FO R M S TO JE D E C O U TLIN E TO -252. 4 DIMENSIONS SHOW N RE BEFORE SOLDER DIP, SOLDER DIP MX. 0.6 (.006). D-Pak (TO-252) Part Marking Information 8 www.irf.com

I-Pak (TO-25) Package Outine Dimensions are shown in miimeters (inches) 5.46 (.25) 5.2 (.205) 6.73 (.265) 6.35 (.250) - - 4.27 (.050) 0.88 (.035) 2.38 (.094) 2.9 (.086) 0.58 (.023) 0.46 (.08) LED SSIGNMENTS - G TE.52 (.060).5 (.045) 6.22 (.245) 5.97 (.235) 6.45 (.245) 5.68 (.224) 2 - D R IN 3 - S O UR C E 4 - D R IN 2 3 - B - 2.28 (.090).9 (.075) 9.65 (.380) 8.89 (.350) NOTES: DIMENSIONING & TOLERNCING PER NSI Y4.5M, 982. 2 CO N TRO LLIN G DIM E NSIO N : INC H. 3 CO N FO R M S TO JED EC O U TLIN E TO-2 52. 4 DIMENSIONS SHOW N RE BEFORE SOLDER DIP, SOLDER DIP MX. 0.6 (.006). 3X.4 (.045) 0.76 (.030) 2.28 (.090) 2X 3X 0.89 (.035) 0.64 (.025) 0.25 (.00) M M B.4 (.045) 0.89 (.035) 0.58 (.023) 0.46 (.08) I-Pak (TO-25) Part Marking Information www.irf.com 9

D-Pak (TO-252) Tape & Ree Information Dimensions are shown in miimeters (inches) TR TRR TRL 6.3 (.64 ) 5.7 (.69 ) 6.3 (.64 ) 5.7 (.69 ) 2. (.476 ).9 (.469 ) FEED DIRECTION 8. (.38 ) 7.9 (.32 ) FEED DIRECTION NOTES :. CONTROLLING DIMENSION : MILLIMETER. 2. LL DIMENSIONS RE SHOWN IN MILLIMETERS ( INCHES ). 3. OUTLINE CONFORMS TO EI-48 & EI-54. 3 INC H NOTES :. OU TLINE CONFO RMS TO EI-48. 6 mm WORLD HEDQURTERS: 233 Kansas St., E Segundo, Caifornia 90245, Te: (30) 252-705 EUROPEN HEDQURTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Te: 44 883 732020 IR CND: 732 Victoria Park ve., Suite 20, Markham, Ontario L3R 2Z8, Te: (905) 475 897 IR GERMNY: Saaburgstrasse 57, 6350 Bad Homburg Te: 49 672 96590 IR ITLY: Via Liguria 49, 007 Borgaro, Torino Te: 39 45 0 IR JPN: K&H Bdg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 7 Te: 8 3 3983 0086 IR SOUTHEST SI: 35 Outram Road, #0-02 Tan Boon Liat Buiding, Singapore 036 Te: 65 22 837 Data and specifications subject to change without notice. 2/0 0 www.irf.com

Note: For the most current drawings pease refer to the IR website at: http://www.irf.com/package/