a FEATURE Bandwidth >4 MHz Low Insertion Loss and On Resistance: 2.2 Typical On-Resistance Flatness.3 Typical ingle 3 V/5 upply Operation Very Low istortion: <.3% Low Quiescent upply Current (1 na Typical) Fast witching Times t ON 6 ns t OFF 3 ns TTL/CMO Compatible Low Voltage 4 MHz Quad 2:1 Mux with 3 ns witching Time FUNCTIONAL BLOCK IAGRAM 1B 2A 2 2B 3A 3 3B 4A 4 4B 1 OF 2 ECOER GERAL ECRIPTION The is a monolithic CMO device comprising four 2:1 multiplexer/demultiplexers with high impedance outputs. The CMO process provides low power dissipation yet gives high switching speed and low on resistance. The on-resistance variation is typically less than.5 W over the input signal range. The bandwidth of the is typically 4 MHz and this, coupled with low distortion (typically.3%), makes the part suitable for switching of high-speed data signals. The on-resistance profile is very flat over the full analog input range ensuring excellent linearity and low distortion. CMO construction ensures ultralow power dissipation. The operates from a single 3.3 V/5 V supply and is TTL logic compatible. The control logic for each switch is shown in the Truth Table. These switches conduct equally well in both directions when ON. In the OFF condition, signal levels up to the supplies are blocked. The switches exhibit break-before-make switching action. PROUCT HIGHLIGHT 1. Wide bandwidth data rates >4 MHz. 2. Ultralow Power issipation. 3. Low leakage over temperature. 4. Break-Before-Make witching. This prevents channel shorting when the switches are configured as a multiplexer. 5. Crosstalk is typically 7 db @ 1 MHz. 6. Off isolation is typically 65 db @ 1 MHz. REV. A Information furnished by Analog evices is believed to be accurate and reliable. However, no responsibility is assumed by Analog evices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Analog evices. Trademarks and registered trademarks are the property of their respective companies. One Technology Way, P.O. Box 916, Norwood, MA 262-916, U..A. Tel: 781/329-47 www.analog.com Fax: 781/326-873 23 Analog evices, Inc. All rights reserved.
PECIFICATION GLE UPPLY 1 ( = 5 V 1%, = V. All specifications T M to T MAX unless otherwise noted.) B Version T M to Parameter 25 C T MAX Unit Test Conditions/Comments ANALOG WITCH Analog ignal Range to 2.5 V On Resistance (R ON ) 2.2 W typ V = V to 1 V; I = 1 ma 3.5 4 W max On Resistance Match Between Channels (R ON ).15 W typ V = V to 1 V; I = 1 ma.5 W max On Resistance Flatness (R FLAT(ON) ).3 W typ V = V to 1 V; I = 1 ma.6 W max LEAKAGE CURRT ource OFF Leakage ±.1 na typ V = 3 V, = 1 V; V = 1 V, = 3 V; ±.1 ±.25 na max Test Circuit 2 rain OFF Leakage ±.1 na typ V = 3 V, = 1 V; V = 1 V, = 3 V; ±.1 ±.25 na max Test Circuit 2 Channel ON Leakage I, I (ON) ±.1 na typ V = = 3 V; V = = 1 V; Test Circuit 3 ±.1 ±.25 na max IGITAL PUT Input High Voltage, V H 2.4 V min Input Low Voltage, V L.8 V max Input Current I L or I H.1 ma typ V = V L or V H ±.1 ma max C, igital Input Capacitance 3 pf typ YNAMIC CHARACTERITIC 2 t ON, t ON () 6 ns typ = 35 pf, R L = 5 W; 12 ns max = 2 V; Test Circuit 4 t OFF, t OFF () 3 ns typ = 35 pf, R L = 5 W; 6 ns max = 2 V; Test Circuit 4 Break-Before-Make Time elay, t 3 ns typ = 35 pf, R L = 5 W; 1 ns min 1 = 2 = 2 V; Test Circuit 5 Off Isolation 65 db typ f = 1 MHz; R L = 5 W; Test Circuit 7 Channel-to-Channel Crosstalk 7 db typ f = 1 MHz; R L = 5 W; Test Circuit 8 Bandwidth 3 db 4 MHz typ Test Circuit 6, R L = 5 W; istortion.3 % typ R L = 1 W Charge Injection 6 pc typ = 1 nf; Test Circuit 9, = V C (OFF) 5 pf typ C (OFF) 7.5 pf typ C, C (ON) 12 pf typ POWER REQUIREMT I 1 ma max.1 ma typ = 5.5 V igital Inputs = V or NOTE 1 Temperature ranges are as follows: B Version, 4 C to +85 C. 2 Guaranteed by design, not subject to production test. pecifications subject to change without notice. 2 REV. A
GLE UPPLY 1 ( = 3 V 1%, = V. All specifications T M to T MAX unless otherwise noted.) B Version T M to Parameter 25 C T MAX Unit Test Conditions/Comments ANALOG WITCH Analog ignal Range to 1.5 V On Resistance (R ON ) 4 W typ V = V to 1 V; I = 1 ma 6 7 W max On Resistance Match Between Channels (R ON ).15 W typ V = V to 1 V; I = 1 ma.5 W max On Resistance Flatness (R FLAT(ON) ) 1.5 W typ V = V to 1 V; I = 1 ma 3 W max LEAKAGE CURRT ource OFF Leakage ±.1 na typ V = 2 V, = 1 V; V = 1 V, = 2 V; ±.1 ±.25 na max Test Circuit 2 rain OFF Leakage ±.1 na typ V = 2 V, = 1 V; V = 1 V, = 2 V; ±.1 ±.25 na max Test Circuit 2 Channel ON Leakage I, I (ON) ±.1 na typ V = = 2 V; V = = 1 V; Test Circuit 3 ±.1 ±.25 na max IGITAL PUT Input High Voltage, V H 2. V min Input Low Voltage, V L.4 V max Input Current I L or I H.1 ma typ V = V L or V H ±.1 ma max C, igital Input Capacitance 3 pf typ YNAMIC CHARACTERITIC 2 t ON, t ON () 7 ns typ = 35 pf, R L = 5 W; 14 ns max = 1.5 V; Test Circuit 4 t OFF, t OFF () 4 ns typ = 35 pf, R L = 5 W; 8 ns max = 1.5 V; Test Circuit 4 Break-Before-Make Time elay, t 3 ns typ = 35 pf, R L = 5 W; 1 ns min 1 = 2 = 1.5 V; Test Circuit 5 Off Isolation 65 db typ f = 1 MHz; R L = 5 W, Test Circuit 7 Channel-to-Channel Crosstalk 7 db typ f = 1 MHz; R L = 5 W, Test Circuit 8 Bandwidth 3 db 4 MHz typ Test Circuit 6; R L = 5 W istortion 1.5 % typ R L = 1 W Charge Injection 4 pc typ = 1 nf; Test Circuit 9, = V C (OFF) 5 pf typ C (OFF) 7.5 pf typ C, C (ON) 12 pf typ POWER REQUIREMT I 1 ma max.1 ma typ = 3.3 V igital Inputs = V or NOTE 1 Temperature ranges are as follows: B Version, 4 C to +85 C. 2 Guaranteed by design, not subject to production test. pecifications subject to change without notice. Table I. Truth Table 2 3 4 Function 1 X Hi-Z Hi-Z Hi-Z Hi-Z IABLE 2A 3A 4A = 1 1B 2B 3B 4B = 1 REV. A 3
ABOLUTE MAXIMUM RATG 1 (T A = 25 C unless otherwise noted) to............................3 V to +6 V Analog, igital Inputs 2............3 V to +.3 V or....................... 3 ma, Whichever Occurs First Continuous Current, or.................... 1 ma Peak Current, or.......................... 3 ma (Pulsed at 1 ms, 1% uty Cycle max) Operating Temperature Range Industrial (B Version)................ 4 C to +85 C torage Temperature Range............ 65 C to +15 C Junction Temperature.......................... 15 C QOP Package, Power issipation.............. 566 mw q JA Thermal Impedance.................. 149.97 C/W Lead Temperature, oldering Vapor Phase (6 sec)......................... 215 C Infrared (15 sec)............................. 22 C NOTE 1 tresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only; functional operation of the device at these or any other conditions above those listed in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Only one absolute maximum rating may be applied at any one time. 2 Overvoltages at, or will be clamped by internal diodes. Current should be limited to the maximum ratings given. P CONFIGURATION (QOP) 1 2 1B 3 4 2A 5 2B 6 2 7 8 13 TOP VIEW (Not to cale) 12 11 1 9 16 15 14 4A 4B 4 3A 3B 3 TERMOLOGY Most Positive Power upply Potential. Ground ( V) Reference. ource Terminal. May be an input or output. rain Terminal. May be an input or output. Logic Control Input. Logic Control Input. R ON Ohmic resistance between and. R ON On Resistance match between any two channels i.e., R ON max R ON min. R FLAT(ON) Flatness is defined as the difference between the maximum and minimum value of on resistance as measured over the specified analog signal range. ource Leakage Current with the switch OFF. rain Leakage Current with the switch OFF. I, I (ON) Channel Leakage Current with the switch ON. V ( ) Analog Voltage on Terminals,. C (OFF) OFF witch ource Capacitance. C (OFF) OFF witch rain Capacitance. C, C (ON) ON witch Capacitance. t ON elay between applying the digital control input and the output switching on. ee Test Circuit 4. t OFF elay between applying the digital control input and the output switching Off. t OFF time or ON time measured between the 9% points of both switches, when switching from one address state to another. ee Test Circuit 5. Crosstalk A measure of unwanted signal that is coupled through from one channel to another as a result of parasitic capacitance. Off Isolation A measure of unwanted signal coupling through an OFF switch. Bandwidth Frequency response of the switch in the ON state measured at 3 db down. istortion R FLAT(ON) /R L ORERG GUIE Model Temperature Range Package escriptions Package Options BRQ 4 C to +85 C RQ =.15" hrink mall Outline Package (QOP) RQ-16 CAUTION E (electrostatic discharge) sensitive device. Electrostatic charges as high as 4 V readily accumulate on the human body and test equipment and can discharge without detection. Although the features proprietary E protection circuitry, permanent damage may occur on devices subjected to high energy electrostatic discharges. Therefore, proper E precautions are recommended to avoid performance degradation or loss of functionality. WARNG! E ITIVE EVICE 4 REV. A
Typical Performance Characteristics 2 T A = 25 C 2 T A = 25 C 2 = 5V 16 16 15 R ON 12 8 4 = 5.V = 4.5V R ON 12 8 4 = 3.V = 2.7V R ON 1 5 +25 C +85 C = 5.5V = 3.3V 4 C 1 2 3 4 5 OR V OR RA OURCE VOLTAGE V TPC 1. On Resistance as a Function of V ( ) for Various ingle upplies.5 1. 1.5 2. 2.5 3. OR V OR RA OURCE VOLTAGE V TPC 2. On Resistance as a Function of V ( ) for Various ingle upplies 1 2 3 4 5 OR V OR RA OURCE VOLTAGE V TPC 3. On Resistance as a Function of V ( ) for ifferent Temperatures with 5 ingle upplies R ON 2 15 1 5 = 3V +25 C +85 C CURRT na.25.2.15.1.5.5.1.15 = 5.V = V TEMP = 25 C I, I (ON) CURRT na.25.2.15.1.5.5.1.15 = 3.V = V TEMP = 25 C I, I (ON) 4 C.5 1. 1.5 2. 2.5 3. OR V OR RA OURCE VOLTAGE V TPC 4. On Resistance as a Function of V ( ) for ifferent Temperatures with 3 ingle upplies.2.25 1 2 3 4 V(V = ) TPC 5. Leakage Current as a Function of V ( ).2.25.5 1. 1.5 2. 2.5 3. V(V = ) TPC 6. Leakage Current as a Function of V ( ) CURRT na.5.4.3.2.1.1.2.3.4.5 5 15 = 5.V = V TEMP = 25 C V = 3V/1V = 1V/3V I, I (ON) 25 35 45 55 65 75 85 TEMPERATURE C TPC 7. Leakage Current as a Function of Temperature CURRT na.5.4.3.2.1.1.2.3.4.5 5 15 = 3.V = V TEMP = 25 C V = 2V/1V = 1V/2V I, I (ON) 25 35 45 55 65 75 85 TEMPERATURE C TPC 8. Leakage Current as a Function of Temperature ATTUATION db 2 4 6 8 1.1.1 1 1 1 1 FREQUCY MHz TPC 9. Off Isolation vs. Frequency REV. A 5
2 1 ATTUATION db 4 6 ON REPONE db 5 1 Q J pc 2 3 4 5 = 3V = 5V 8 6 1.1.1 1 1 1 1 FREQUCY MHz 15.1.1 1 1 1 1 FREQUCY MHz 7.5 1. 1.5 2. 2.5 VOLTAGE V TPC 1. Crosstalk vs. Frequency TPC 11. Bandwidth TPC 12. Charge Injection vs. ource Voltage 1 BAE TX+ 1 BAE TX TX1 1 BAE TX+ 1 BAE TX TX2 RJ45 1 BAE TX+ 1 BAE TX 1 BAE TX+ 1 BAE TX RX1 RX2 TRANFORMER 1 BAE TX 1 BAE TX Figure 1. Full uplex Transceiver TX1 RX1 12 1 Figure 2. Loop Back Figure 3. Line Termination Figure 4. Line Clamp 6 REV. A
Test Circuits I V1 A A NC I (ON) A V V R ON = V1/I NC = NO CONNECT Test Circuit 1. On Resistance Test Circuit 2. Off Leakage Test Circuit 3. On Leakage 5V.1 F V 3V 5% 5% 9% 9% R L 1 35pF t ON t OFF Test Circuit 4. witching Times.1 F.1 F 5V NETWORK ANALYZER 3V V V 5% 5% OUT 1B V V R L V 5% 5% OUT 1 35pF ECOER t t V 5 5 Test Circuit 5. Break-Before-Make Time elay Test Circuit 6. Bandwidth.1 F.1 F NETWORK ANALYZER NETWORK ANALYZER 5 5 5 2A R L 5 V 5 V 2 5 Test Circuit 7. Off Isolation Test Circuit 8. Channel-to-Channel Crosstalk REV. A 7
5V R 1B 2A 2B 3A 3B 4A 4B 1 OF 2 ECOER 1nF 1nF 1nF 1nF 2 3 4 V 3V Q J = C2373 4/3(A) Test Circuit 9. Charge Injection OUTLE IMION 16-Lead hrink mall Outline Package [QOP] (RQ-16) imensions shown in inches.193 BC 16 9 1 8.154 BC.236 BC.65.49 P 1.69.53.1.4 COPLANARITY.4.25 BC.12.8 EATG PLANE.1.6 8 COMPLIANT TO JEEC TANAR MO-137AB.5.16 Revision History Location Page 4/3 ata heet changed from REV. to REV. A. Changes to TPCs 9 11................................................................................... 5 Updated OUTLE IMION........................................................................ 8 8 REV. A