IR IGBT IRGB463DPbF IRGIB463DPbF IRGP463D(-E)PbF IRGS463DPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode V CES = 6V I C = 3A, T C =1 C C C C t SC 5µs, T J(max) = 175 C V CE(ON) typ. = 1.65V @ IC = 18A C E G IRGB463DPbF TO-22AB G C E IRGP463DPbF TO-247AC C E G IRGP463D-EPbF TO-247AD Applications C C Industrial Motor Drive Inverters UPS Welding G E n-channel E C G IRGIB463DPbF TO-22AB Full-Pak C E G IRGS463DPbF D 2 Pak G C E Gate Collector Emitter Features Benefits Low V CE(ON) and switching losses High efficiency in a wide range of applications and switching frequencies Square RBSOA and maximum junction temperature 175 C Improved reliability due to rugged hard switching performance and high power capability Positive V CE (ON) temperature coefficient and tight distribution Excellent current sharing in parallel operation of parameters 5µs Short Circuit SOA Enables short circuit protection scheme Lead-Free, RoHS Compliant Environmentally friendly Base part number Package Type Standard Pack Orderable Part Number Form Quantity IRGB463DPbF TO-22AB Tube 5 IRGB463DPbF IRGIB463DPbF TO-22AB Full-Pak Tube 5 IRGIB463DPbF IRGP463DPbF TO-247AC Tube 25 IRGP463DPbF IRGP463D-EPbF TO-247AD Tube 25 IRGP463D-EPbF Tube 5 IRGS463DPbF IRGS463DPbF D 2 Pak Tape and Reel Right 8 IRGS463DTRRPbF Tape and Reel Left 8 IRGS463DTRLPbF 1 215-11-23
IRGB/IB/P/S463D/EPbF Absolute Maximum Ratings Parameter Max. Units V CES Collector-to-Emitter Voltage 6 V I C @ T C = 25 C Continuous Collector Current 47 I C @ T C = 1 C Continuous Collector Current 3 I CM Pulse Collector Current, V GE =15V 54 A I LM Clamped Inductive Load Current, V GE =2V 72 I F @ T C = 25 C Diode Continuous Forward Current 3 I F @ T C = 1 C Diode Continuous Forward Current 18 I FM Diode Maximum Forward Current 72 V GE Continuous Gate-to-Emitter Voltage ±2 V Transient Gate to Emitter Voltage ±3 P D @ T C = 25 C Maximum Power Dissipation 26 P D @ T C = 1 C Maximum Power Dissipation 13 W T J Operating Junction and -4 to +175 T STG Storage Temperature Range Soldering Temperature, for 1 sec. (1.6mm from case) 3 C Mounting Torque, 6-32 or M3 Screw (TO-22, TO-247) 1 lbf in (1.1 N m) Thermal Resistance Parameter Min. Typ. Max. Units R θjc (IGBT) Thermal Resistance Junction-to-Case (D 2 Pak, TO-22).73 Thermal Resistance Junction-to-Case (TO-22 Full-Pak) 3.4 Thermal Resistance Junction-to-Case (TO-247).78 R θjc (Diode) Thermal Resistance Junction-to-Case (D 2 Pak, TO-22) 2. Thermal Resistance Junction-to-Case (TO-22 Full-Pak) 4.6 Thermal Resistance Junction-to-Case (TO-247) 2.1 R θcs Thermal Resistance, Case-to-Sink (flat, greased surface-to-22, D 2 Pak, C/W.5 TO-22 Full-Pak ) Thermal Resistance Case-to-Sink (TO-247).24 R θja Thermal Resistance, Junction-to-Ambient (PCB Mount - D 2 Pak) 4 Thermal Resistance, Junction-to-Ambient (Socket Mount TO-22) 62 Thermal Resistance, Junction-to-Ambient (Socket Mount TO-247) 4 Thermal Resistance, Junction-to-Ambient (Socket Mount TO-22 Full-Pak) 65 Electrical Characteristics @ T J = 25 C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions V (BR)CES Collector-to-Emitter Breakdown Voltage 6 V V GE = V, I C = 1µA ΔV (BR)CES /ΔT J Temperature Coeff. of Breakdown Voltage.4 V/ C V GE = V, I C = 1mA (25 C-175 C) 1.65 1.95 I C = 18A, V GE = 15V, T J = 25 C V CE(on) Collector-to-Emitter Saturation Voltage 2.5 V I C = 18A, V GE = 15V, T J = 15 C 2.15 I C = 18A, V GE = 15V, T J = 175 C V GE(th) Gate Threshold Voltage 4. 6.5 V V CE = V GE, I C = 5µA ΔV GE(th) /ΔT J Threshold Voltage Temp. Coefficient -18 mv/ C V CE = V GE, I C = 1.mA (25 C-175 C) gfe Forward Transconductance 12 S V CE = 5V, I C = 18A, PW = 8µs I CES Collector-to-Emitter Leakage Current 2. 25 µa V GE = V, V CE = 6V 55 V GE = V, V CE = 6V, T J = 175 C I GES Gate-to-Emitter Leakage Current ±1 na V GE = ±2V V FM Diode Forward Voltage Drop 2.3 3.3 V I F = 18A 1.6 I F = 18A, T J = 175 C 2 215-11-23
IRGB/IB/P/S463D/EPbF Switching Characteristics @ T J = 25 C (unless otherwise specified) Parameter Min. Typ. Max Units Conditions Q g Total Gate Charge 35 I C = 18A Q ge Gate-to-Emitter Charge 1 nc V GE = 15V Q gc Gate-to-Collector Charge 15 V CC = 4V E on Turn-On Switching Loss 95 I µj C = 18A, V CC = 4V, V GE =15V E off Turn-Off Switching Loss 35 E R G = 22Ω, L = 2µH, L S total Total Switching Loss 445 = 15nH, t d(on) Turn-On delay time 4 T J = 25 C t r Rise time 25 t d(off) Turn-Off delay time 15 t f Fall time 25 E on Turn-On Switching Loss 285 E off Turn-Off Switching Loss 57 E total Total Switching Loss 855 t d(on) Turn-On delay time 4 t r Rise time 25 t d(off) Turn-Off delay time 12 t f Fall time 4 ns µj ns Energy losses include tail & diode reverse recovery I C = 18A, V CC = 4V, V GE =15V R G = 22Ω, L = 2µH, L S = 15nH, T J = 175 C Energy losses include tail & diode reverse recovery C ies Input Capacitance 14 V GE = V C oes Output Capacitance 87 pf V CC = 3V C res Reverse Transfer Capacitance 32 f = 1.MHz T J = 175 C, I C = 72A RBSOA Reverse Bias Safe Operating Area FULL SQUARE V CC = 48V, Vp 6V R G = 22Ω, V GE = +2V to V SCSOA Short Circuit Safe Operating Area 5. µs V CC = 4V, Vp 6V R G = 22Ω, V GE = +15V to V Erec Reverse Recovery Energy of the Diode 26 µj T J = 175 C t rr Diode Reverse Recovery Time 1 ns V CC = 4V, I F = 18A, V GE = 15V, I rr Peak Reverse Recovery Current 23 A Rg = 22Ω, L = 2µH, L S = 15nH Notes: Limited by maximum junction temperature. Not applicable for Full-Pak package: current value limited by R θ JC. R θ is measured at T J of approximately 9 C. Refer to AN-186 for guidelines for measuring V (BR)CES safely. Pulse width limited by maximum junction temperature. Values influenced by parasitic L and C in measurement. When mounted on 1 square PCB (FR-4 or G-1 Material). For recommended footprint and soldering techniques refer to application note #AN-994.http://www.irf.com/technical-info/appnotes/an-994.pdf V CC = 8% (V CES ), V GE = 2V, L = 1µH, R G = 22Ω. 3 215-11-23
I CE (A) I CE (A) I C (A) I C (A) I C (A) P tot (W) IRGB/IB/P/S463D/EPbF 5 25 4 2 3 15 2 1 1 5 25 5 75 1 125 15 175 25 5 75 1 125 15 175 T C ( C) T C ( C) Fig. 1 - Maximum DC Collector Current vs. Case Temperature Fig. 2 - Power Dissipation vs. Case Temperature 1 1 1 1µsec 1µsec 1 1.1 Tc = 25 C Tj = 175 C Single Pulse 1 1 1 1 1 1msec DC 1 1 1 1 Fig. 3 - Forward SOA T C = 25 C; T J 175 C; V GE = 15V Fig. 4 - Reverse Bias SOA T J = 175 C; VGE = 2V 9 8 7 6 V GE = 18V VGE = 15V VGE = 12V VGE = 1V VGE = 8.V 9 8 7 6 V GE = 18V VGE = 15V VGE = 12V VGE = 1V VGE = 8.V 5 5 4 4 3 3 2 2 1 1 1 2 3 4 5 6 7 8 1 2 3 4 5 6 7 8 Fig. 5 - Typ. IGBT Output Characteristics TJ = -4 C; tp = 8µs Fig. 6 - Typ. IGBT Output Characteristics TJ = 25 C; tp = 8µs 4 215-11-23
I CE (A) I CE (A) I F (A) IRGB/IB/P/S463D/EPbF 9 1 8 7 6 5 V GE = 18V VGE = 15V VGE = 12V VGE = 1V VGE = 8.V 8 6-4 c 25 C 175 C 4 3 4 2 1 2 1 2 3 4 5 6 7 8 Fig. 7 - Typ. IGBT Output Characteristics T J = 175 C; tp = 8µs 2 18 16 14. 1. 2. 3. 4. 5. 2 18 16 14 V F (V) Fig. 8 - Typ. Diode Forward Voltage Drop Characteristics 12 1 8 I CE = 9.A I CE = 18A I CE = 36A 12 1 8 I CE = 9.A I CE = 18A I CE = 36A 6 6 4 4 2 2 5 1 15 2 5 1 15 2 V GE (V) V GE (V) Fig. 9 - Typical V CE vs. V GE T J = -4 C Fig. 1 - Typical V CE vs. V GE T J = 25 C 2 18 18 16 16 14 12 1 8 6 I CE = 9.A I CE = 18A I CE = 36A 14 12 1 8 6 T J = 25 C T J = 175 C 4 4 2 2 5 1 15 2 5 1 15 2 V GE (V) V GE (V) Fig. 11 - Typical V CE vs. V GE T J = 175 C Fig. 12 - Typ. Transfer Characteristics V CE = 5V; tp = 1µs 5 215-11-23
I RR (A) I RR (A) Energy (µj) Swiching Time (ns) Energy (µj) Swiching Time (ns) IRGB/IB/P/S463D/EPbF 14 1 12 1 8 E OFF td OFF 6 E ON 1 t F 4 2 td ON t R 5 1 15 2 25 3 35 4 I C (A) 1 5 1 15 2 25 3 35 4 45 I C (A) Fig. 14 - Typ. Energy Loss vs. I C T J = 175 C; L = 2µH; V CE = 4V, R G = 22Ω; V GE = 15V 9 Fig. 15 - Typ. Switching Time vs. I C T J = 175 C; L = 2µH; V CE = 4V, R G = 22Ω; V GE = 15V 1 8 7 E OFF 6 td OFF 5 4 3 E ON 1 td ON 2 1 t R t F 25 5 75 1 125 1 25 5 75 1 125 Rg ( Ω) R G (Ω) Fig. 16 - Typ. Energy Loss vs. R G T J = 175 C; L = 2µH; V CE = 4V, I CE = 18A; V GE = 15V Fig. 17 - Typ. Switching Time vs. R G T J = 175 C; L = 2µH; V CE = 4V, I CE = 18A; V GE = 15V 35 3 R G = 1Ω 4 35 25 R G = 22Ω 3 2 15 1 R G = 47Ω R G = 1Ω 25 2 15 1 5 5 1 2 3 4 I F (A) 25 5 75 1 125 R G (Ω) Fig. 18 - Typ. Diode I RR vs. I F T J = 175 C Fig. 19 - Typ. Diode I RR vs. R G T J = 175 C 6 215-11-23
Capacitance (pf) V GE, Gate-to-Emitter Voltage (V) Energy (µj) Time (µs) I RR (A) Q RR (µc) IRGB/IB/P/S463D/EPbF 4 16 35 3 25 14 12 36A 22Ω 1Ω 2 15 1 5 1 8 6 1Ω 47Ω 18A 9.A 5 1 15 4 5 1 15 di F /dt (A/µs) di F /dt (A/µs) Fig. 2 - Typ. Diode I RR vs. di F /dt V CC = 4V; V GE = 15V; I F = 18A; T J = 175 C Fig. 21 - Typ. Diode Q RR vs. di F /dt V CC = 4V; V GE = 15V; T J = 175 C 4 35 3 25 2 15 1 5 R G = 1Ω R G = 22Ω R G = 47Ω R G = 1Ω 2 18 16 14 12 1 8 6 4 2 12 11 1 9 8 7 6 5 4 3 Current (A) 1 2 3 4 8 1 12 14 16 18 2 I F (A) V GE (V) Fig. 22 - Typ. Diode E RR vs. I F T J = 175 C Fig. 23 - V GE vs. Short Circuit Time V CC = 4V; T C = 25 C 1 16 1 Cies 14 12 1 V CES = 3V V CES = 4V 8 1 Coes 6 4 Cres 2 1 2 4 6 8 1 5 1 15 2 25 3 35 Q G, Total Gate Charge (nc) Fig. 24 - Typ. Capacitance vs. V CE V GE = V; f = 1MHz Fig. 25 - Typical Gate Charge vs. V GE I CE = 18A; L = 6µH 7 215-11-23
IRGB/IB/P/S463D/EPbF 1 D =.5.1.1.2.1.5.2.1 τ J τ J τ 1 τ τ 2 1 τ 2 Ci= τi/ri Ci = τi/ri R 1 R R 2 1 R 2 τ C τ C Ri ( C/W) τi (sec).3193.273.414.4525 Thermal Response ( Z thjc ) SINGLE PULSE ( THERMAL RESPONSE ).1 1E-6 1E-5.1.1.1.1 t 1, Rectangular Pulse Duration (sec) Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc Fig. 26 - Maximum Transient Thermal Impedance, Junction-to-Case (IGBT-TO-22Pak) 1 1 D =.5 Thermal Response ( Z thjc ).1.1.2.1.5.2.1 R 1 R 2 R 3 R 1 R 2 R 3 τ J τ J τ 1 τ 1 τ 2 τ 2 τ 3 τ 3 Ci= τi/ri Ci= τi/ri.655.13544 SINGLE PULSE ( THERMAL RESPONSE ) Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc.1 1E-6 1E-5.1.1.1.1 t 1, Rectangular Pulse Duration (sec) τ C τ C Ri ( C/W) τi (sec).244.84 1.12.177 Fig. 27 - Maximum Transient Thermal Impedance, Junction-to-Case (DIODE- TO-22Pak) 8 215-11-23
IRGB/IB/P/S463D/EPbF L L 1K DUT VCC 8 V + - Rg DUT VCC Fig.C.T.1 - Gate Charge Circuit (turn-off) Fig.C.T.2 - RBSOA Circuit diode clamp / DUT 4X L DC VCC -5V DUT Rg DUT / DRIVER VCC R SH Fig.C.T.3 - S.C. SOA Circuit Fig.C.T.4 - Switching Loss Circuit C force R = VCC ICM 1K Rg DUT VCC G force D1 DUT 22K.75µF C sense E sense E force Fig.C.T.5 - Resistive Load Circuit Fig.C.T.6 - BVCES Filter Circuit 9 215-11-23
IRGB/IB/P/S463D/EPbF 6 3 6 6 5 9% I CE 25 5 tr 5 4 2 4 4 3 2 tf 5% I CE 15 1 I CE (A) 3 2 9% test TEST 3 2 I CE (A) 1 5% V CE 5 1 1% test current 5% V CE 1 E OFF Loss -1-5 -5.7-5.2-4.7-4.2 Time(µs) E ON -1-1 -.15.5.25 Time (µs) Fig. WF1 - Typ. Turn-off Loss Waveform @ T J = 175 C using Fig. CT.4 Fig. WF2 - Typ. Turn-on Loss Waveform @ T J = 175 C using Fig. CT.4 3 5 25 2 Q RR 4 2 1 t RR 3 V CE 15 I RR (A) -1-2 Peak I RR 1% Peak I RR 2 1 I CE 1 5 I CE (A) -3-4 -.5.5.15 Time (µs) -1-5 -5.. 5. 1. Time (µs) Fig. WF3 - Typ. Diode Recovery Waveform @ T J = 175 C using Fig. CT.4 Fig. WF4 - Typ. S.C. Waveform @ T J = 15 C using Fig. CT.3 1 215-11-23
IRGB/IB/P/S463D/EPbF TO-22AB Package Outline (Dimensions are shown in millimeters (inches)) TO-22AB Part Marking Information EXAM PLE: TH IS IS AN IRF11 L O T C O D E 1 7 8 9 ASSEM BLED O N W W 19, 2 IN TH E ASSEM BLY LIN E "C" N o te : "P " in a s s e m b ly lin e p o s itio n indicates "Lead - Free" IN T E R N A T IO N A L R E C T IF IE R LO G O ASSEM BLY LO T C O D E P A R T N U M B E R D A T E C O D E YEAR = 2 W E E K 1 9 LIN E C TO-22AB package is not recommended for Surface Mount Application. 11 215-11-23
IRGB/IB/P/S463D/EPbF TO-22AB Full Pak Package Outline (Dimensions are shown in millimeters (inches)) TO-22AB Full Pak Part Marking Information TO-22AB Full-Pak package is not recommended for Surface Mount Application. 12 215-11-23
IRGB/IB/P/S463D/EPbF TO-247AC Package Outline Dimensions are shown in millimeters (inches) TO-247AC Part Marking Information Notes: This part marking information applies to devices produced after 2/26/21 EXAMPLE: THIS IS AN IRFPE3 WITH ASSEMBLY LOT CODE 5657 ASSEMBLED ON WW 35, 21 IN THE ASSEMBLY LINE "H" Note: "P" in assembly line position indicates "Lead-Free" INTERNATIONAL RECTIFIER LOGO ASSEMBLY LOT CODE IRFPE3 135H 56 57 PART NUMBER DATE CODE YEAR 1 = 21 WEEK 35 LINE H TO-247AC package is not recommended for Surface Mount Application. 13 215-11-23
IRGB/IB/P/S463D/EPbF TO-247AD Package Outline Dimensions are shown in millimeters (inches) TO-247AD Part Marking Information EXAM PLE: THIS IS AN IRGP3B12KD-E WITH ASSEMBLY LO T CODE 5657 ASSEM BLED ON WW 35, 2 IN THE ASSEM BLY LINE "H" N o te : "P " in a s s e m b ly lin e p o s itio n indicates "Lead-Free" PART NUMBER IN TE R N A TIO N A L RECTIFIER LOGO 35H 56 57 DATE CODE ASSEM BLY YEAR = 2 LOT CODE WEEK 35 LINE H TO-247AD package is not recommended for Surface Mount Application. 14 215-11-23
IRGB/IB/P/S463D/EPbF D 2 -PAK (TO-263AB) Package Outline Dimensions are shown in millimeters (inches) D 2 -Pak (TO-263AB) Part Marking Information THIS IS AN IRF53S WITH LOT CODE 824 ASSEMBLED ON WW 2, 2 IN THE ASSEMBLY LINE "L" INTERNATIONAL RECTIFIER LOGO ASSEMBLY LOT CODE F53S PART NUMBER DATE CODE YEAR = 2 WEEK 2 LINE L OR INTERNATIONAL RECTIFIER LOGO ASSEMBLY LOT CODE F53S PART NUMBER DATE CODE P = DESIGNATES LEAD - FREE PRODUCT (OPTIONAL) YEAR = 2 WEEK 2 A = ASSEMBLY SITE CODE 15 215-11-23
IRGB/IB/P/S463D/EPbF D 2 Pak Tape & Reel Information (Dimensions are shown in millimeters (inches)) TRR 1.6 (.63) 1.5 (.59) 4.1 (.161) 3.9 (.153) 1.6 (.63) 1.5 (.59).368 (.145).342 (.135) FEED DIRECTION 1.85 (.73) 1.65 (.65) 11.6 (.457) 11.4 (.449) 15.42 (.69) 15.22 (.61) 24.3 (.957) 23.9 (.941) TRL 1.9 (.429) 1.7 (.421) 16.1 (.634) 15.9 (.626) 1.75 (.69) 1.25 (.49) 4.72 (.136) 4.52 (.178) FEED DIRECTION 13.5 (.532) 12.8 (.54) 27.4 (1.79) 23.9 (.941) 4 33. (14.173) MAX. 6. (2.362) MIN. NOTES : 1. COMFORMS TO EIA-418. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION MEASURED @ HUB. 4. INCLUDES FLANGE DISTORTION @ OUTER EDGE. 26.4 (1.39) 24.4 (.961) 3 3.4 (1.197) MAX. 4 16 215-11-23
IRGB/IB/P/S463D/EPbF Qualification Information Qualification Level Moisture Sensitivity Level RoHS Compliant TO-22AB TO-22AB-Full-Pak TO-247AC TO-247AD D 2 Pak Industrial (per JEDEC JESD47F) Yes N/A MSL1 Qualification standards can be found at International Rectifier s web site: http://www.irf.com/product-info/reliability/ Applicable version of JEDEC standard at the time of product release. Published by Infineon Technologies AG 81726 München, Germany Infineon Technologies AG 215 All Rights Reserved. IMPORTANT NOTICE The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics ( Beschaffenheitsgarantie ). With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. In addition, any information given in this document is subject to customer s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer s products and any use of the product of Infineon Technologies in customer s applications. The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. For further information on the product, technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies office (www.infineon.com). WARNINGS Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury. 17 215-11-23