FDCC FDCC V N & P-Channel PowerTrench MOSFETs General Description Features These N & P-Channel MOSFETs are produced using ON Semiconductor s advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices have been designed to offer exceptional power dissipation in a very small footprint for applications where the bigger more expensive SO- and TSSOP- packages are impractical. Applications DC/DC converter Load switch LCD display inverter Q. A, V. R DS(ON) = 9 mω @ V GS = V R DS(ON) = mω @ V GS =. V Q. A, V. R DS(ON) = mω @ V GS = V R DS(ON) = mω @ V GS =. V Low gate charge High performance trench technology for extremely low R DS(ON). SuperSOT package: small footprint (7% smaller than SO-); low profile (mm thick). S D D Q(P) TM SuperSOT - Pin SuperSOT - G S G Q(N) Absolute Maximum Ratings T A= o C unless otherwise noted Symbol Parameter Q Q Units V DSS Drain-Source Voltage V V GSS Gate-Source Voltage ± ± V I D Drain Current Continuous (Note a).. A P D Pulsed Power Dissipation for Single Operation (Note a).9 (Note b).9 (Note c).7 T J, T STG Operating and Storage Junction Temperature Range to + C Thermal Characteristics R θja Thermal Resistance, Junction-to-Ambient (Note a) C/W R θjc Thermal Resistance, Junction-to-Case (Note ) C/W Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity. FDCC 7 mm units W Semiconductor Components Industries, LLC. October-7, Rev. Publication Order Number: FDCC/D
Electrical Characteristics T A = C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BV DSS BVDSS T J I DSS I GSSF I GSSR Drain Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate Body Leakage, Forward Gate Body Leakage, Reverse V GS = V, I D = µa V GS = V, I D = µa I D = µa,ref. to C I D = µa,ref. to C V DS = V, V GS = V V DS = V, V GS = V V GS = V, V DS = V V GS = V, V DS = V V GS = V, V DS = V V GS = V, V DS = V Q Q Q Q Q Q Q Q Q Q 7 V mv/ C µa na na FDCC On Characteristics (Note ) V GS(th) Gate Threshold Voltage Q V DS = V GS, I D = µa. Q V DS = V GS, I D = µa. VGS(th) Gate Threshold Voltage Q I D = µa,ref. To C T J Temperature Coefficient Q I D = µa,ref. to C R DS(on) Static Drain Source Q V GS = V, I D =. A On Resistance V GS =. V, I D =. A V GS = V, I D =. A,T J= C Q V GS = V, I D =. A V GS =. V, I D =.7 A V GS = V, I D=. A,T J= C I D(on) On State Drain Current Q V GS = V, V DS = V Q V GS = V, V DS = V g FS Forward Transconductance Q V DS = V I D =. A 7 Dynamic Characteristics 7 9 9 9 Q V DS = V I D =.A C iss Input Capacitance Q V DS= V, V GS= V, f=.mhz Q V DS= V, V GS= V, f=.mhz C oss Output Capacitance Q V DS= V, V GS= V, f=.mhz 9 Q V DS= V, V GS= V, f=.mhz C rss Reverse Transfer Capacitance Q V DS= V, V GS= V, f=.mhz Switching Characteristics (Note ) Q V DS= V, V GS= V, f=.mhz t d(on) Turn On Delay Time Q For Q:. 9 Q V DS = V, I DS= A. 9 t r Turn On Rise Time Q V GS= V, R GEN = Ω Q For Q: t d(off) Turn Off Delay Time Q V DS = V, I DS= A 9 V Q GS= V, R GEN = Ω t f Turn Off Fall Time Q. Q Q g Total Gate Charge Q For Q:.7. Q V DS = V, I DS=. A..7 Q gs Gate Source Charge Q V GS= V, R GEN = Ω.9 Q For Q:. V DS = V, I DS=. A Q gd Gate Drain Charge Q V. GS= V, Q. 9 V mv/ C mω A S pf pf pf ns ns ns ns nc nc nc
Electrical Characteristics T A = C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Drain Source Diode Characteristics and Maximum Ratings I S Maximum Continuous Drain Source Diode Forward Current Q. A Q. V SD Drain Source Diode Forward Q V GS = V, I S =. A (Note ).. Voltage Q V GS = V, I S =. A (Note ).. V FDCC Notes:. R θja is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R θjc is guaranteed by design while R θca is determined by the user's board design. a) C/W when mounted on a. in pad of oz. copper. b) /W when mounted on a. in pad of oz copper c) /W when mounted on a minimum pad. Scale : on letter size paper. Pulse Test: Pulse Width < µs, Duty Cycle <.%
Typical Characteristics: N-Channel V GS = V.V V GS =.V FDCC.V.V.V R DS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE.....V.V.V.V V V DS, DRAIN-SOURCE VOLTAGE (V). Figure. On-Region Characteristics. Figure. On-Resistance Variation with Drain Current and Gate Voltage. R DS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE.... I D =.A V GS = V R DS(ON), ON-RESISTANCE (OHM).... T A = o C T A = o C I D =.A. - - 7 TJ, JUNCTION TEMPERATURE ( o C). V GS, GATE TO SOURCE VOLTAGE (V) Figure. On-Resistance Variation withtemperature. Figure. On-Resistance Variation with Gate-to-Source Voltage. V DS =V T A =- o C o C o C I S, REVERSE DRAIN CURRENT (A)... V GS = V T A = o C o C - o C... V GS, GATE TO SOURCE VOLTAGE (V)...... V SD, BODY DIODE FORWARD VOLTAGE (V) Figure. Transfer Characteristics. Figure. Body Diode Forward Voltage Variation with Source Current and Temperature.
Typical Characteristics: N-Channel (continued) V GS, GATE-SOURCE VOLTAGE (V) I D =.A Q g, GATE CHARGE (nc) V DS = V V V CAPACITANCE (pf) C RSS C OSS C ISS VDS, DRAIN TO SOURCE VOLTAGE (V) f = MHz V GS = V FDCC Figure 7. Gate Charge Characteristics. Figure. Capacitance Characteristics... R DS(ON) LIMIT V GS = V R θja = o C/W T A = o C ms s DC µs µs ms ms. V DS, DRAIN-SOURCE VOLTAGE (V) P(pk), PEAK TRANSIENT POWER (W).. t, TIME (sec) R θja = C/W T A = C Figure 9. Maximum Safe Operating Area. Figure. Single Pulse Maximum Power Dissipation.
Typical Characteristics: P-Channel - V GS = -V -.V -.V -.V -.V R DS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE.. V GS = -.V -.V -.V -.V -.V -V FDCC -V DS, DRAIN-SOURCE VOLTAGE (V). -I D, DRAIN CURRENT (A) Figure. On-Region Characteristics. Figure. On-Resistance Variation with Drain Current and Gate Voltage. R DS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE.... I D = -A V GS =-V R DS(ON), ON-RESISTANCE (OHM).... T A = o C T A = o C I D = -A. - - 7 T J, JUNCTION TEMPERATURE ( o C) -V GS, GATE TO SOURCE VOLTAGE (V) Figure. On-Resistance Variation withtemperature. Figure. On-Resistance Variation with Gate-to-Source Voltage. - V DS = -V T A = - o C o C o C.... -V GS, GATE TO SOURCE VOLTAGE (V) -I S, REVERSE DRAIN CURRENT (A)... V GS = V T A = o C o C - o C....... -V SD, BODY DIODE FORWARD VOLTAGE (V) Figure. Transfer Characteristics. Figure. Body Diode Forward Voltage Variation with Source Current and Temperature.
Typical Characteristics: P-Channel (continued) -V GS, GATE-SOURCE VOLTAGE (V) I D = -.A -V V DS = -V -V CAPACITANCE (pf) C RSS C OSS C ISS f = MHz V GS = V FDCC Q g, GATE CHARGE (nc) -V DS, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics. Figure. Capacitance Characteristics... R DS(ON) LIMIT V GS = V R θja = o C/W T A = o C ms s DC µs µs ms ms. V DS, DRAIN-SOURCE VOLTAGE (V) P(pk), PEAK TRANSIENT POWER (W).. t, TIME (sec) R θja = C/W T A = C Figure 9. Maximum Safe Operating Area. Figure. Single Pulse Maximum Power Dissipation. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE.. D =........... t, TIME (sec) Figure. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note c. Transient thermal response will change depending on the circuit board design. R θja(t) = r(t) + R θja R θja = C/W P(pk) t t T J - T A = P * R θja(t) Duty Cycle, D = t / t 7
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