V DS 12 V CPM2-12-25B Silicon Carbide Power MOSFET C2M TM MOSFET Technology N-Channel Enhancement Mode I D @ 25 C R DS(on) 98 A 25 mω Features Chip Outline High Blocking Voltage with Low On-Resistance High Speed Switching with Low Capacitances Easy to Parallel and Simple to Drive Avalanche Ruggedness Resistant to Latch-Up Halogen Free, RoHS Compliant Benefits Higher System Efficiency Reduced Cooling Requirements Increased Power Density Increased System Switching Frequencyy Applications Solar Inverters Switch Mode Power Supplies High Voltage DC/DC converters Battery Chargers Motor Drive Pulsed Power Applications Part Number Die Size (mm) CPM2-12-25B 4.4 x 6.44 Maximum Ratings (T C = 25 C unless otherwise specified) Symbol Parameter Value Unit Test Conditions Note V DSmax Drain - Source Voltage 12 V V GS = V, I D = 1 μa V GSmax Gate - Source Voltage -1/+25 V Absolute maximum values, AC (f >1 Hz) V GSop Gate - Source Voltage -5/+2 V Recommended operational values I D Continuous Drain Current 98 V GS =2 V, T C = 25 C A 71 V GS =2 V, T C = 1 C Note 1 I D(pulse) Pulsed Drain Current 25 A Pulse width t P limited by T jmax T J, T stg Operating Junction and Storage Temperature -4 to +175 C T Proc Maximum Processing Temperature 325 C 1 min. maximum Note (1): Assumes a R θjc <.27 K/W 1 CPM2-12-25B Rev. C, 1-216
Electrical Characteristics (T C = 25 C unless otherwise specified) Symbol Parameter Min. Typ. Max. Unit Test Conditions Note V (BR)DSS Drain-Source Breakdown Voltage 12 V V GS = V, I D = 1 μa V GS(th) Gate Threshold Voltage 2. 2.6 4 V V DS = V GS, I D = 15mA 2. V V DS = V GS, I D = 15mA, I DSS Zero Gate Voltage Drain Current 2 1 μa V DS = 12 V, V GS = V I GSS Gate-Source Leakage Current 6 na V GS = 2 V, V DS = V R DS(on) g fs Drain-Source On-State Resistance Transconductance C iss Input Capacitance 2788 C oss Output Capacitance 22 C rss Reverse Transfer Capacitance 15 25 34 V GS = 2 V, I D = 5 A mω 52 V GS = 2 V, I D = 5 A, 23.6 V DS= 2 V, I DS= 5 A S 21.1 V DS= 2 V, I DS= 5 A, pf V GS = V V DS = 1 V f = 1 MHz VAC E oss C oss Stored Energy 121 μj = 25 mv Fig 16 E AS Avalanche Energy, Single Pluse 3.5 J I D = 5A, V DD = 5V Fig. 11 Fig. 4,5,6 Fig. 7 Fig. 17,18 E ON Turn-On Switching Energy 1.4 E OFF Turn Off Switching Energy.3 t d(on) Turn-On Delay Time 14 t r Rise Time 32 t d(off) Turn-Off Delay Time 29 t f Fall Time 28 mj ns V DS = 8 V, V GS = -5/2 V, I D = 5A, R G(ext) = 2.5Ω,L= 412 μh V DD = 8 V, V GS = -5/2 V I D = 5 A, R G(ext) = 2.5 Ω, R L = 16 Ω Timing relative to V DS Per IEC6747-8-4 pg 83 R G(int) Internal Gate Resistance 1.1 Ω f = 1 MHz, V AC = 25 mv, ESR of C ISS Q gs Gate to Source Charge 46 Q gd Gate to Drain Charge 5 Q g Total Gate Charge 161 nc V DS = 8 V, V GS = -5/2 V I D = 5 A Per IEC6747-8-4 pg 83 Fig. 12 Reverse Diode Characteristics Symbol Parameter Typ. Max. Unit Test Conditions Note V SD Diode Forward Voltage 4. V V GS = - 5 V, I SD = 25 A 3.5 V V GS = - 5 V, I SD = 25 A, T J = 175 C Fig. 8, 9, 1 I S Continuous Diode Forward Current 98 T C = 25 C Note 2 t rr Reverse Recovery Time 45 ns Q rr Reverse Recovery Charge 46 nc I rrm Peak Reverse Recovery Current 13.5 A V GS = - 5 V, I SD = 5 A,T J = 25 C VR = 8 V dif/dt = 1 A/µs Note 2 Note (2): When using SiC Body Diode the maximum recommended V GS = -5V Note (3): For inductive and resistive switching data and waveforms please refer to datasheet for packaged device. Thermal Characteristics Part number C2M2512D. R θjc Thermal Resistance from Junction to Ambient 4 2 CPM2-12-25B Rev. C, 1-216
Typical Performance 15 12 9 6 3 T J = -4 C tp < 2 µs V GS = 2 V V GS = 12 V V GS = 1 V 15 12 9 6 3 tp < 2 µs V GS = 2 V V GS = 12 V V GS = 1 V. 2.5 5. 7.5 1.. 2.5 5. 7.5 1. Figure 1. Output Characteristics T J = -4 C Figure 2. Output Characteristics 15 12 tp < 2 µs V GS = 2 V 2.5 2. I DS = 5 A V GS = 2 V t p < 2 µs 9 6 3 V GS = 12 V V GS = 1 V On Resistance, R DS On (P.U.) 1.5 1..5. 2.5 5. 7.5 1.. -5-25 25 5 75 1 125 15 175 Junction Temperature, T J ( C) Figure 3. Output Characteristics Figure 4. Normalized On-Resistance vs. Temperature 7 6 V GS = 2 V t p < 2 µs 6 5 I DS = 5 A t p < 2 µs On Resistance, R DS On (mohms) 5 4 3 2 1 T J = -4 C On Resistance, R DS On (mohms) 4 3 2 1 V GS = 2 V 2 4 6 8 1 12 14 Figure 5. On-Resistance vs. Drain Current For Various Temperatures -5-25 25 5 75 1 125 15 175 Junction Temperature, T J ( C) Figure 6. On-Resistance vs. Temperature For Various Gate Voltage 3 CPM2-12-25B Rev. C, 1-216
Typical Performance 15 12 9 6 3 V DS = 2 V tp < 2 µs T J = -4 C -8-7 -6-5 -4-3 -2-1 V GS = -5 V V GS = -2 V V GS = V -3-6 -9 2 4 6 8 1 12 14 Gate-Source Voltage, V GS (V) T J = -4 C t p < 2 µs -12-15 Figure 7. Transfer Characteristic For Various Junction Temperatures Figure 8. Body Diode Characteristic at -4 ºC -8-7 -6-5 -4-3 -2-1 -8-7 -6-5 -4-3 -2-1 V GS = -5 V V GS = V V GS = -2 V -3-6 -9 V GS = -5 V V GS = V V GS = -2 V -3-6 -9 T J = 25 C t p < 2 µs -12-15 T J = 175 C t p < 2 µs -12-15 Figure 9. Body Diode Characteristic at 25 ºC Figure 1. Body Diode Characteristic at 175 ºC Threshold Voltage, V th (V) 3.5 3. 2.5 2. 1.5 1..5 Conditons: V DS = V GS I DS = 15 ma Gate-Source Voltage, V GS (V) 25 2 15 1 5 I DS = 5 A I GS = 1 ma V DS = 8 V. -5-25 25 5 75 1 125 15 175 Junction Temperature T J ( C) -5 2 4 6 8 1 12 14 16 18 Gate Charge, Q G (nc) Figure 11. Threshold Voltage vs. Temperature Figure 12. Gate Charge Characteristic 4 CPM2-12-25B Rev. C, 1-216
Typical Performance -6-5 -4-3 -2-1 -6-5 -4-3 -2-1 V GS = V V GS = 5 V V GS = 1 V V GS = 15 V -3-6 -9 V GS = V V GS = 5 V V GS = 1 V V GS = 15 V -3-6 -9 V GS = 2 V T J = -4 C t p < 2 µs -12-15 V GS = 2 V t p < 2 µs -12-15 Figure 13. 3rd Quadrant Characteristic at -4 ºC Figure 14. 3rd Quadrant Characteristic at 25 ºC -5-4 -3-2 -1 15 V GS = V V GS = 5 V V GS = 1 V V GS = 15 V V GS = 2 V -3-6 -9 Stored Energy, E OSS (µj) 12 9 6 3 t p < 2 µs -12-15 2 4 6 8 1 12 Drain to Source Voltage, V DS (V) Figure 15. 3rd Quadrant Characteristic at 175 ºC Figure 16. Output Capacitor Stored Energy 1 1 C iss C iss Capacitance (pf) 1 1 C oss C rss V AC = 25 mv f = 1 MHz Capacitance (pf) 1 1 C oss V AC = 25 mv f = 1 MHz C rss 1 1 1 5 1 15 2 1 2 4 6 8 1 Figure 17. Capacitances vs. Drain-Source Voltage (-2 V) Figure 18. Capacitances vs. Drain-Source Voltage (-1 V) 5 CPM2-12-25B Rev. C, 1-216
Mechanical Parameters Parameter Typical Value Unit Die Dimensions (L x W) 4.4 x 6.44 mm Exposed Source Pad Metal Dimensions (LxW) Each 1. x 4.54 (x3) mm Gate Pad Dimensions (L x W).5 x.8 mm Die Thickness 18 ± 4 µm Top Side Source metallization (Al) 4 µm Top Side Gate metallization (Al) 4 µm Bottom Drain metallization (Ni/Ag).8 /.6 µm Chip Dimensions 6 CPM2-12-25B Rev. C, 1-216
Notes RoHS Compliance The levels of RoHS restricted materials in this product are below the maximum concentration values (also referred to as the threshold limits) permitted for such substances, or are used in an exempted application, in accordance with EU Directive 211/65/ EC (RoHS2), as implemented January 2, 213. RoHS Declarations for this product can be obtained from your Cree representative or from the Product Documentation sections of www.cree.com. REACh Compliance REACh substances of high concern (SVHCs) information is available for this product. Since the European Chemical Agency (ECHA) has published notice of their intent to frequently revise the SVHC listing for the foreseeable future,please contact a Cree representative to insure you get the most up-to-date REACh SVHC Declaration. REACh banned substance information (REACh Article 67) is also available upon request. This product has not been designed or tested for use in, and is not intended for use in, applications implanted into the human body nor in applications in which failure of the product could lead to death, personal injury or property damage, including but not limited to equipment used in the operation of nuclear facilities, life-support machines, cardiac defibrillators or similar emergency medical equipment, aircraft navigation or communication or control systems, air traffic control systems. Related Links C2M PSPICE Models: http://wolfspeed.com/power/tools-and-support SiC MOSFET Isolated Gate Driver reference design: http://wolfspeed.com/power/tools-and-support SiC MOSFET Evaluation Board: http://wolfspeed.com/power/tools-and-support Copyright 215 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree, the Cree logo, and Zero Recovery are registered trademarks of Cree, Inc. Cree, Inc. 46 Silicon Drive Durham, NC 2773 USA Tel: +1.919.313.53 Fax: +1.919.313.5451 www.cree.com/power 7 CPM2-12-25B Rev. C, 1-216