E 1 C 2 C 1 E 2 B 2 B 1 B 2 E 2

OMPLEMENTARY NPN / PNP SMALL SIGNAL SURFAE MOUNT TRANSISTOR Features NEW PRODUT omplementary Pair Epitaxial Planar Die onstruction One 2222A Type (NPN), One 297A Type (PNP) Ideal for Low Power Amplification and Switching Lead Free By Design/RoHS ompliant (Note 2) "Green Device" (Note 3) Mechanical Data ase: SOT-26 ase Material: Molded Plastic, Green Molding ompound. UL Flammability lassification Rating 94- Moisture Sensitivity: Level 1 per J-STD-2 Terminals: Finish - Matte Tin annealed over opper leadframe. Solderable per MIL-STD-22, Method 28 Terminal onnections: See Diagram Ordering & Date ode Information: See Page 6 Marking Information: See Page 6 Weight:.6 grams (approximate) K J 1 B 1 A E 1 H D 2 E 2 B 2 F B Note: E1, B1, and 1 = 2222A Type (NPN) E2, B2, and 2 = 297A Type (PNP) Type marking indicates orientation L M SOT-26 Dim Min Max Typ A.35.5.38 B 1.5 1.7 1.6 2.7 3. 2.8 D.95 F.55 H 2.9 3.1 3. J.13.1.5 K 1. 1.3 1.1 L.35.55.4 M.1.2.15 α 8 All Dimensions in mm 1 E 1 2 B 1 E 2 B 2 Maximum Ratings: 2222A Type (NPN) @T A = 25 unless otherwise specified haracteristic Symbol 2222A (NPN) Unit ollector-base oltage BO 75 ollector-emitter oltage EO 4 Emitter-Base oltage EBO 6. ollector urrent - ontinuous I 6 ma Maximum Ratings: 297A Type (PNP) @T A = 25 unless otherwise specified haracteristic Symbol 297A (PNP) Unit ollector-base oltage BO -6 ollector-emitter oltage EO -6 Emitter-Base oltage EBO -5. ollector urrent - ontinuous I -6 ma Maximum Ratings: Total @T A = 25 unless otherwise specified haracteristic Symbol alue Unit Power Dissipation (Note 1) P D 3 mw Thermal Resistance, Junction to Ambient (Note 1) R θja 417 /W Operating and Storage Temperature Range T j, T STG -55 to +15 Notes: 1. Device mounted on FR-4 PB, 1 inch x.85 inch x.62 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP21, which can be found on our website at http:///datasheets/ap21.pdf. 2. No purposefully added lead. 3. Diodes Inc.'s "Green" policy can be found on our website at http:///products/lead_free/index.php. DS31217 Rev. 4-2 1 of 6

Electrical haracteristics: 2222A Type (NPN) @T A = 25 unless otherwise specified NEW PRODUT haracteristic Symbol Min Max Unit Test ondition OFF HARATERISTIS (Note 4) ollector-base Breakdown oltage (BR)BO 75 I = 1μA, I E = ollector-emitter Breakdown oltage (BR)EO 4 I = 1mA, I B = Emitter-Base Breakdown oltage (BR)EBO 6. I E = 1μA, I = ollector utoff urrent I BO 1 na B = 6, I E = μa B = 6, I E =, T A = 15 ollector utoff urrent I EX 1 na E = 6, EB(OFF) = 3. Emitter utoff urrent I EBO 1 na EB = 3., I = Base utoff urrent I BL 2 na E = 6, EB(OFF) = 3. ON HARATERISTIS (Note 4) D urrent Gain ollector-emitter Saturation oltage E(SAT) h FE 35 5 75 4 5 35 3.3 1. 1.2 2. I = μa, E = 1 I = 1.mA, E = 1 I = 1mA, E = 1 I = 15mA, E = 1 I = 5mA, E = 1 I = 1mA, E = 1, T A = -55 I = 15mA, E = 1. I = 15mA, I B = 15mA I = 5mA, I B = 5mA I = 15mA, I B = 15mA I = 5mA, I B = 5mA.6 Base-Emitter Saturation oltage BE(SAT) SMALL SIGNAL HARATERISTIS Output apacitance obo 8 pf B = 1, f = 1.MHz, I E = Input apacitance ibo 25 pf EB =.5, f = 1.MHz, I = urrent Gain-Bandwidth Product f T 3 MHz SWITHING HARATERISTIS Delay Time t d 1 ns Rise Time t r 25 ns Storage Time t s 225 ns Fall Time t f 6 ns E = 2, I = 2mA, f = MHz = 3, I = 15mA, BE(off) = -.5, I B1 = 15mA = 3, I = 15mA, I B1 = I B2 = 15mA Notes: 4. Pulse test: pulse width 3μS, duty cycle 2%. DS31217 Rev. 4-2 2 of 6

Electrical haracteristics: 297A Type (PNP) @T A = 25 unless otherwise specified NEW PRODUT haracteristic Symbol Min Max Unit Test ondition OFF HARATERISTIS (Note 4) ollector-base Breakdown oltage (BR)BO -6 I = -1μA, I E = ollector-emitter Breakdown oltage (BR)EO -6 I = -1mA, I B = Emitter-Base Breakdown oltage (BR)EBO -5. I E = -1μA, I = ollector utoff urrent I BO -1 na B = -5, I E = μa B = -5, I E =, T A = 125 ollector utoff urrent I EX -5 na E = -3, EB(OFF) = -.5 Base utoff urrent I BL -5 na E = -3, EB(OFF) = -.5 ON HARATERISTIS (Note 4) D urrent Gain ollector-emitter Saturation oltage E(SAT) Base-Emitter Saturation oltage BE(SAT) h FE 75 5 3 -.4-1.6-1.3-2.6 I = -µa, E = -1 I = -1.mA, E = -1 I = -1mA, E = -1 I = -15mA, E = -1 I = -5mA, E = -1 I = -15mA, I B = -15mA I = -5mA, I B = -5mA I = 15mA, I B = 15mA I = 5mA, I B = 5mA SMALL SIGNAL HARATERISTIS Output apacitance obo 8. pf B = -1, f = 1.MHz, I E = Input apacitance ibo 3 pf EB = -2., f = 1.MHz, I = urrent Gain-Bandwidth Product f T 2 MHz E = -2, I = -5mA, f = MHz SWITHING HARATERISTIS Turn-On Time t on 45 ns Delay Time t d 1 ns Rise Time t r 4 ns Turn-Off Time t off ns Storage Time t s 8 ns Fall Time t f 3 ns = -3, I = -15mA, I B1 = -15mA = -6., I = -15mA, I B1 = I B2 = -15mA P D, POWER DISSIPATION (mw) 4 35 3 25 2 15 5 25 5 75 125 15 175 2 T A, AMBIENT TEMPERATURE ( ) Fig. 1, Max Power Dissipation vs. Ambient Temperature DS31217 Rev. 4-2 3 of 6

NEW PRODUT BE(ON), BASE EMITTER TURN-ON OLTAGE () I, OLLETOR URRENT (ma) E(SAT), OLLETOR EMITTER SATURATION OLTAGE () BE(SAT), BASE EMITTER SATURATION OLTAGE () I, OLLETOR URRENT (ma) I, OLLETOR URRENT (ma) APAITANE (pf) E = 2 f = MHz, REERSE OLTAGE () R Fig. 7 Typical Gain-Bandwidth Product vs. ollector urrent (2222A) DS31217 Rev. 4-2 4 of 6

NEW PRODUT h FE, D URRENT GAIN - BE(ON), BASE-EMITTER TURN-ON OLTAGE () -I, OLLETOR URRENT (A) Fig. 8 Typical D urrent Gain vs. ollector urrent (297A) 1.2 1.8.6.4.2.1 1 1 1, Fig. 1 Typical Base-Emitter Turn-On oltage vs. ollector urrent (297A) - E(SAT), OLLETOR-EMITTER SATURATION OLTAGE () - BE(SAT), BASE-EMITTER SATURATION OLTAGE () 1.2 1.8.6.4.2 Fig. 9 Typical ollector-emitter Saturation oltage vs. ollector urrent (297A) I /I B = 1.1 1 1 1, Fig. 11 Typical Base-Emitter Saturation oltage vs. ollector urrent (297A) APAITANE (pf) 35 3 25 2 15 1 5.1 1 1 R, REERSE OLTAGE () Fig. 12 Typical apacitance haracteristics (297A) f, T GAIN BANDWIDTH PRODUT (MHz) 5 45 4 35 3 25 2 15 5 2 4 6 8 Fig. 13 Typical Gain-Bandwidth Product vs. ollector urrent (297A) DS31217 Rev. 4-2 5 of 6

Ordering Information (Note 5) Device Packaging Shipping -7 SOT-26 3/Tape & Reel Notes: 5. For packaging details, go to our website at http:///datasheets/ap27.pdf. Marking Information NEW PRODUT D27 YM D27 = Product Type Marking ode YM = Date ode Marking Y = Year ex: U = 27 M = Month ex: 9 = September Date ode Key Year 27 28 29 21 211 212 ode U W X Y Z Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec ode 1 2 3 4 5 6 7 8 9 O N D IMPORTANT NOTIE Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated. DS31217 Rev. 4-2 6 of 6