AOT44 N-Channel Enhancement Mode Field Effect Transistor General Description The AOT44 uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. This device is suitable for use in high voltage synchronous rectification, load switching and general purpose applications. Standard Product AOT44 is Pb-free (meets ROHS & Sony 59 specifications). AOT44L is a Green Product ordering option. AOT44 and AOT44L are electrically identical. Features DS () = 5 I D = 4 A ( GS =) R DS(ON) < 8 mω ( GS =) @ A R DS(ON) < 3 mω ( GS = 6) TO- D Top iew Drain Connected to Tab G S G D S Absolute Maximum Ratings T A = unless otherwise noted Parameter Drain-Source oltage Gate-Source oltage Symbol DS GS Maximum 5 ±5 Units Continuous Drain T C = 4 Current T C = C I D 8 A Pulsed Drain Current C Avalanche Current C I DM I AR A Repetitive avalanche energy L=.mH C E AR mj T C = Power Dissipation B P D T C = C 5 W Junction and Storage Temperature Range T J, T STG -55 to 75 C Thermal Characteristics Parameter Symbol Typ Max Units Maximum Junction-to-Ambient A Steady-State R θja 5 6 C/W Maximum Junction-to-Case B Steady-State R θjc.5 C/W Alpha Omega Semiconductor, Ltd.
AOT44 Electrical Characteristics (T J = unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS B DSS Drain-Source Breakdown oltage I D =ma, GS = 5 I DSS Zero Gate oltage Drain Current DS =84, GS = T J =55 C 5 µa I GSS Gate-Body leakage current DS =, GS =±5 na GS(th) Gate Threshold oltage DS = GS, I D =5µA.5 3. 4 I D(ON) On state drain current GS =, DS =5 A GS =, I D =A.5 8 R DS(ON) Static Drain-Source On-Resistance T J = 44 53 mω GS =6, I D =A 4 3 mω g FS Forward Transconductance DS =5, I D =A 5 S SD Diode Forward oltage I S =A, GS =.73 I S Maximum Body-Diode Continuous Current 55 A DYNAMIC PARAMETERS C iss Input Capacitance 38 445 pf C oss Output Capacitance GS =, DS =5, f=mhz 4 pf C rss Reverse Transfer Capacitance 85 pf R g Gate resistance GS =, DS =, f=mhz.3.56 Ω SWITCHING PARAMETERS Q g () Total Gate Charge 38.5 46 nc Q gs Gate Source Charge GS =, DS =5, I D =3A 7.7 nc Q gd Gate Drain Charge 3.4 nc t D(on) Turn-On DelayTime.7 ns t r Turn-On Rise Time GS =, DS =5, R L =.7Ω, 8. ns t D(off) Turn-Off DelayTime R GEN =3Ω 3.5 ns t f Turn-Off Fall Time. ns t rr Body Diode Reverse Recovery Time I F =3A, di/dt=a/µs 6.6 74 ns Q rr Body Diode Reverse Recovery Charge I F =3A, di/dt=a/µs 7.4 nc A: The value of R θja is measured with the device in a still air environment with T A =. B. The power dissipation P D is based on T J(MAX) =75 C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C: Repetitive rating, pulse width limited by junction temperature T J(MAX) =75 C. D. The R θja is the sum of the thermal impedence from junction to case R θjc and case to ambient. E. The static characteristics in Figures to 6 are obtained using <3 µs pulses, duty cycle.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of T J(MAX) =75 C. G. The maximum current rating is limited by bond-wires. Rev: August 5 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERES THE RIGHT TO IMPROE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE
AOT44 8 6 DS =5 6 4 5 GS =4.5 R DS(ON) (mω) 3 4 5 4 3 3 4 6 DS (olts) Fig : On-Region Characteristics GS =6 GS = Figure 3: On-Resistance vs. Drain Current and Gate oltage Normalized On-Resistance.4..8.6.4..5 3 3.5 4 4.5 5.E+ GS (olts) Figure : Transfer Characteristics GS =, A GS =6,A.8 5 5 75 5 5 75 Temperature ( C) Figure 4: On-Resistance vs. Junction Temperature R DS(ON) (mω) 5 4 3 I D =3A 4 8 6 GS (olts) Figure 5: On-Resistance vs. Gate-Source oltage I S (A).E+.E+.E-.E-.E-3.E-4...4.6.8.. SD (olts) Figure 6: Body-Diode Characteristics
AOT44 8 DS =5 I D =3A 3 C iss GS (olts) 6 4 Capacitance (nf) C oss C rss 3 4 Q g (nc) Figure 7: Gate-Charge Characteristics 4 6 8 DS (olts) Figure 8: Capacitance Characteristics T J(Max) =75 C, T A = 3 I D (Amps) R DS(ON) limited µs ms, DC Power (W) T J(Max) =75 C T A =.. DS (olts) Figure 9: Maximum Forward Biased Safe Operating Area (Note F).... Pulse Width (s) Figure : Single Pulse Power Rating Junction-to- Case (Note F) Z θjc Normalized Transient Thermal Resistance. D=T on /T T J,PK =T A +P DM.Z θjc.r θjc R θjc =.5 C/W In descending order D=.5,.3,.,.5,.,., single pulse T Single Pulse...... Pulse Width (s) Figure : Normalized Maximum Transient Thermal Impedance (Note F) P D T on
A D DD AOT44 6 5 t = L B I, Peak Avalanche Current 4 T A =5 C T A = Power Dissipation (W) 5.... Time in avalanche, t A (s) Figure : Single Pulse Avalanche capability 5 5 75 5 5 75 T CASE ( C) Figure 3: Power De-rating (Note B) 5 4 Current rating 3 5 5 75 5 5 75 T CASE ( C) Figure 4: Current De-rating (Note B)