Power MOSFET Stage for Boost Converters

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UM 33-5N Power MOSFET Sage for Boos Converers Module for Power Facor Correcion 5 = 7 DSS = 5 R DS(on) =. Ω RRM (Diode) DSS Type 5 3 7 3 5 UM 33-5N 5 7 Symbol Condiions Maximum Raings DSS T J = 5 C o 5 C 5 DGR T J = 5 C o 5 C; R GS = kω 5 GS Coninuous ± T S = 5 C 33 T S = 5 C 7 M T S = 5 C, p = 3 MOSFET P D T S = 5 C 3 W I S GS =, T S = 5 C 33 I SM GS =, T S = 5 C, p = 3 RRM I F T S = 5 C, recangular δ =.5 33 Boos Diode I FSM T J = 5 C, = ms (5 Hz) 3 =.3 ms ( Hz) 3 T J = 5 C, = ms (5 Hz) =.3 ms ( Hz) P T S = 5 C 59 W RRM I d T S = 5 C, sinus 5 Module Recifier Diodes I FSM T J = 5 C, = ms (5 Hz) 3 =.3 ms ( Hz) 3 T J = 5 C, = ms (5 Hz) =.3 ms ( Hz) P T S = 5 C 5 W T J -...+5 C T JM 5 C T sg -...+5 C ISOL 5/ Hz = min 3 ~ I ISOL m = s 3 ~ M d Mouning orque (M5) -.5/- Nm/lb.in. Weigh g Feaures Package wih DCB ceramic base plae Soldering connecions for PCB mouning Isolaion volage 3 ~ Low R DS(on) HDMOS TM process Low package inducance for high speed swiching Ulrafas boos diode Kelvin source for easy drive pplicaions Power facor pre-condiioner for SMPS, UPS, baery chargers and inverers Boos opology for SMPS including ~ recifier bridge Power supply for welding equipmen dvanages 3 funcions in one package Oupu power up o kw No exernal isolaion Easy o moun wih wo screws Suiable for wave soldering High emperaure and power cycling capabiliy Fis easiliy o all available PFC conroller ICs Pulse widh limied by T J 77a 7 IXYS ll righs reserved -

UM 33-5N Symbol Condiions Characerisic alues (T J = 5 C, unless oherwise specified) min. yp. DSS GS =, = m 5 GS(h) DS =, = m 5 I GSS GS = ±, DS = ±5 n SS DS = 5, GS = m R DS(on) T J = 5 C. Ω R Gin T J = 5 C.5 Ω Recifier Diodes Boos Diode MOSFET g fs DS = 5, S = 3 S DS S =, GS =.5 d(on) DS = 5, S =, GS = ns d(off) Zgen. = Ω, L-load ns C iss.5 nf C oss DS = 5, f = MHz, GS =.9 nf C rss.3 nf Q g DS = 5, =, GS = 35 nc R hjh wih hea ransfer pase. K/W F I F = 33 ; T J = 5 C.75 T J =5 C.5 I R R =, T J = 5 C.5 m R =, T J = 5 C.5 m T J =5 C 7 m T For power-loss calculaions only. r T T J = 5 C 9 mω I RM I F = 3 ; = /μs R = 35, T J = C R hjh wih hea ransfer pase. K/W F I F =, T J = 5 C.5 T J = 5 C.5 I R R =, T J = 5 C.5 m R =. RRM,T J = 5 C m T For power-loss calculaions only. r T T J = 5 C mω R hjh wih hea ransfer pase.3 K/W Dimensions in mm ( mm =.39") I FSM... s Fig. Non-repeiive peak surge curren (Recifier Diodes) I 35 3 5 5 5 5 s 3 R =. RRM T J = 5 C T J = 5 C T J = 5 C T J = 5 C ms Fig. I for fusing (Recifier Diodes) 77a 7 IXYS ll righs reserved -

UM 33-5N 7 5 3 7 GS = 5 7 5 3 T J = 5 C T J = 5 C.5 R DS(on). norm..5. =.5 DS 3 5 7 GS. -5 5 C 5 T J Fig. 3 Typ. oupu characerisic Fig. Typ. ransfer characerisics Fig. 5 Typ. normalized = f ( DS ) (MOSFET) = f ( GS ) (MOSFET) R DS(on) = f (T J ) (MOSFET). B DSS GS(h).. norm. GS(h) DSS GS DS = 5 = I G = m nf C C iss. C oss. C rss. -5 5 C 5 T J 3 nc Q g. 5 5 Fig. Typ. normalized B DSS = f (T J ) Fig. 7 Typ. urn-on gae charge Fig. Typ. capaciances C = f ( DS ), GS(h) = f (T J ) (MOSFET) characerisics, GS = f (Q g ) (MOSFET) f = MHz (MOSFET) DS s g fs I F T J =5 C T J = C T J = 5 C Q rr 3. μc.5..5..5 T J = C R = 35 I F = 7 I F =.5.5..5..5 F yp.. /μs Fig. 9 Typ. ransconducance, Fig. Forward curren versus Fig. Recovery charge versus g fs = f ( ) (MOSFET) volage drop (Boos Diode) (Boos Diode) 77a 7 IXYS ll righs reserved 3 -

UM 33-5N I RM 3 T J = C R = 35 I F = 7 I F =.5 yp. 3 /μs 5 K..... I RM Q r.. C 3 5 /μs T J rr. μs.5..3.. T J = C R = 35 I F = 7 I F =.5 Fig. Peak reverse curren versus Fig. 3 Dynamic parameers versus Fig. Recovery ime versus (Boos Diode) juncion emperaure (Boos Diode) (Boos Diode) yp. FR FR P ou kw T S =5 C in = 3 /5 Hz P ou kw T =5 C S = khz FR in = 5 / Hz = khz 3 /μs 5 di F khz 5 5 5 in (RMS) Fig. 5 Peak forward volage versus Fig. Oupu power versus carrier Fig. 7 Oupu power versus (Boos Diode) frequency (Module) mains volage P ou 9 kw 7 5 = khz in = 3 /5 Hz Z hjc.5 UM 33 K/W..9 Recifier Diodes Boos Diode 3 in = 5 / Hz..3 MOSFET T S C Fig. Oupu power versus heasink emperaure (Module)... s Fig. 9 Transien hermal impedance juncion o case for all devices 77a 7 IXYS ll righs reserved -

Mouser Elecronics uhorized Disribuor Click o iew Pricing, Invenory, Delivery & Lifecycle Informaion: IXYS: UM33-5N