SPB8P6P G SIPMOS PowerTransistor Features PChannel Enhancement mode valanche rated dv/dt rated 175 C operating temperature Pbfree lead plating: RoHS compliant Halogenfree according to IEC61249221 Qualified according to EC Q1 Type Package SPB8P6P G PGTO2633 Product Summary Drain source voltage V DS 6 Drainsource onstate resistance R DS(on).23 W Continuous drain current Lead free Yes I D 8 V Pin 1 PIN 2/4 PIN 3 G D S Maximum Ratings,at T j = 25 C, unless otherwise specified Parameter Symbol Value Unit Continuous drain current T C = 25 C, 1) T C = C Pulsed drain current T C = 25 C valanche energy, single pulse I D = 8, V DD = 25 V, R GS = 25 W I D 8 64 I D puls 32 E S valanche energy, periodic limited by T jmax E R 34 Reverse diode dv/dt I S = 8, V DS = 48, di/dt = 2 /µs, T jmax = 175 C dv/dt 6 823 mj Gate source voltage V GS ±2 V Power dissipation T C = 25 C P tot 34 W Operating and storage temperature T j, T stg 55...+175 C IEC climatic category; DIN IEC 681 55/175/56 kv/µs 1 Current limited by bondwire; with an RthJC =.4 K/W the chip is able to carry I D = 91 Rev 1.6 Page 1 21191
Thermal Characteristics SPB8P6P G Parameter Symbol Values Unit Characteristics Thermal resistance, junction case Thermal resistance, junction ambient, leaded R thj SMD version, device on PCB: @ min. footprint @ 6 cm 2 cooling area 1) min. typ. max. R thjc.4 R thj 62 62 4 K/W Electrical Characteristics, at T j = 25 C, unless otherwise specified Parameter Symbol Values Unit Static Characteristics Drain source breakdown voltage V GS = V, I D = 25 µ Gate threshold voltage, V GS = V DS I D = 5.5 m Zero gate voltage drain current V DS = 6 V, V GS = V, T j = 25 C V DS = 6 V, V GS = V, T j = 15 C Gatesource leakage current V GS = 2 V, V DS = V Drainsource onstate resistance V GS = V, I D = 64 min. typ. max. V (BR)DSS 6 V V GS(th) I DSS 2.1 3 4.1 1 I GSS R DS(on).21.23 W µ n 1 Device on 4mm*4mm*1.5mm epoxy PCB FR4 with 6cm 2 (one layer, 7 µm thick) copper area for drain connection. PCB is vertical without blown air. Rev 1.6 Page 2 21191
SPB8P6P G Electrical Characteristics, at T j = 25 C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Dynamic Characteristics Transconductance V DS ³2*I D *R DS(on)max, I D = 64 Input capacitance V GS = V, V DS = 25 V, f = 1 MHz Output capacitance V GS = V, V DS = 25 V, f = 1 MHz Reverse transfer capacitance V GS = V, V DS = 25 V, f = 1 MHz Turnon delay time V DD = 3 V, V GS = V, I D = 64, R G = 1 W Rise time V DD = 3 V, V GS = V, I D = 64, R G = 1 W Turnoff delay time V DD = 3 V, V GS = V, I D = 64, R G = 1 W Fall time V DD = 3 V, V GS = V, I D = 64, R G = 1 W g fs 18 36 C iss 426 533 pf C oss 1252 1565 C rss t d(on) 437 546 S 24 36 ns t r 18 27 t d(off) 56 84 t f 3 45 Rev 1.6 Page 3 21191
SPB8P6P G Electrical Characteristics, at T j = 25 C, unless otherwise specified Parameter Symbol Values min. typ. max. Unit Dynamic Characteristics Gate to source charge V DD = 48 V, I D = 8 Gate to drain charge V DD = 48 V, I D = 8 Gate charge total V DD = 48 V, I D = 8, V GS = to V Gate plateau voltage V DD = 48 V, I D = 8 Q gs 27.4 41 Q gd 5 75 Q g 115 173 V (plateau) 6.2 V nc Parameter Symbol Values Unit min. typ. max. Reverse Diode Inverse diode continuous forward current I S 8 T C = 25 C Inverse diode direct current,pulsed I SM 32 T C = 25 C Inverse diode forward voltage V SD 1.2 1.6 V V GS = V, I F = 8 Reverse recovery time t rr 117 175 ns V R = 3 V, I F =I S, di F /dt = /µs Reverse recovery charge V R = 3 V, I F =l S, di F /dt = /µs Q rr 42 63 nc Rev 1.6 Page 4 21191
SPB8P6P G Power dissipation P tot = f (T C ) 36 W Drain current I D = f (T C ) parameter: V GS ³ V 9 28 7 Ptot 24 ID 6 2 5 16 4 12 3 8 2 4 2 4 6 8 12 14 16 C 19 2 4 6 8 12 14 16 C 19 T C T C Safe operating area I D = f ( V DS ) parameter : D =, T C = 25 C 3 t p = 14.µs Transient thermal impedance Z thjc = f (t p ) parameter : D = t p /T K/W 1 ID 2 R DS(on) = V DS / I D µs 1 ms ms ZthJC 1 2 D =.5.2 1 DC 3 4 single pulse..5.2.1 1 1 V 2 V DS Rev 1.6 Page 5 5 7 6 5 4 3 2 s t p 21191
SPB8P6P G Typ. output characteristic I D = f (V DS ); T j =25 C parameter: t p = 8 µs ID 19 16 14 12 8 6 4 P tot = 34.W k j c 2 b a 1 2 3 4 5 6 7 8 V i g e d V GS [V] a 4. b 4.5 c 5. d 5.5 e 6. h f 6.5 f g 7. h 7.5 i 8. j 9. k. V DS Typ. transfer characteristics I D = f ( V GS ) V DS ³ 2 x I D x R DS(on)max parameter: t p = 8 µs 8 6 Typ. drainsourceonresistance R DS(on) = f (I D ) parameter: V GS RDS(on).75 W.6.55.5.45.4.35.3.25.2.15 b c d e f. V GS [V] = b c d e f g h i j k.5 4.5 5. 5.5 6. 6.5 7. 7.5 8. 9.. j k. 2 4 6 8 12 16 Typ. forward transconductance g fs = f(i D ); T j =25 C parameter: g fs S 5 4 35 g h i I D ID 5 gfs 3 4 25 3 2 2 15 5 1 2 3 4 5 6 7 8 V 2 3 4 5 6 7 8 V GS I D Rev 1.6 Page 6 21191
SPB8P6P G Drainsource onstate resistance R DS(on) = f (T j ) parameter : I D = 64, V GS = V.7 W Gate threshold voltage V GS(th) = f (T j ) parameter: V GS = V DS, I D = 5.5 m 5. V.6.55 4. 98% RDS(on).5.45.4 VGS(th) 3.5 3. typ.35.3.25.2 98% typ 2.5 2. 1.5 2%.15 1...5.5. 6 2 2 6 14 C 2 Typ. capacitances C = f (V DS ) parameter: V GS =V, f=1 MHz 5 T j. 6 2 2 6 14 C 2 T j Forward characteristics of reverse diode I F = f (V SD ) parameter: T j, tp = 8 µs 3 pf 4 2 C IF C iss 3 C oss C rss 1 T j = 25 C typ T j = 175 C typ T j = 25 C (98%) T j = 175 C (98%) 2 5 15 V 25 V DS Rev 1.6 Page 7..4.8 1.2 1.6 2. 2.4 V 3. V SD 21191
SPB8P6P G valanche energy E S = f (T j ) para.: I D = 8, V DD = 25 V, R GS = 25 W 85 mj 7 Typ. gate charge V GS = f (Q Gate ) parameter: I D = 8 pulsed 16 V 6 12 ES 5 VGS,2 V DS max,8 V DS max 4 8 3 6 2 4 2 25 45 65 85 5 125 145 C 185 T j 2 4 6 8 12 14 nc 18 Q Gate Drainsource breakdown voltage V (BR)DSS = f (T j ) 72 V V(BR)DSS 68 66 64 62 6 58 56 54 6 2 2 6 14 C 2 T j Rev 1.6 Page 8 21191
SPB8P6P G Rev 1.6 21191
SPB8P6P G Rev 1.6 21191
SPB8P6P G Published by Infineon Technologies G 81726 Munich, Germany 28 Infineon Technologies G ll Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of noninfringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in lifesupport devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that lifesupport device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev 1.6 Page 11 21191
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