FMC769 N-Channel Power Trench MOFET V, 3.3 A, 8.5 m Features Max r (on) = 8.5 m at V G = V, I = 3.3 A Max r (on) =.5 m at V G = 4.5 V, I =.6 A High performance technology for extremely low r (on) Termination is Lead-free and RoH Compliant Top Bottom General escription This N-Channel MOFET is produced using ON emiconductor s advanced Power Trench process that has been especially tailored to minimize the on-state resistance. This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs. Application C - C Buck Converters Notebook battery power management Load switch in Notebook Pin G 5 6 4 3 G 7 8 MLP 3.3x3.3 MOFET Maximum Ratings T A = 5 C unless otherwise noted ymbol Parameter Ratings Units V rain to ource Voltage V V G Gate to ource Voltage ± V rain Current -Continuous (Package limited) T C = 5 C 6 I -Continuous T A = 5 C (Note a) 3.3 Thermal Characteristics -Pulsed E A ingle Pulse Avalanche Energy (Note 3) 58 mj Power issipation T P C = 5 C 9 Power issipation T A = 5 C (Note a).3 T J, T TG Operating and torage Junction Temperature Range -55 to +5 C A W R JC Thermal Resistance, Junction to Case 4.3 R JA Thermal Resistance, Junction to Ambient (Note a) 53 Package Marking and Ordering Information C/W evice Marking evice Package Reel ize Tape Width Quantity FMC769 FMC769 MLP 3.3x3.3 3 mm units emiconductor Components Industries, LLC. October-7, Rev.3 Publication Order Number: FMC769/
Electrical Characteristics T J = 5 C unless otherwise noted ymbol Parameter Test Conditions Min Typ Max Units Off Characteristics BV rain to ource Breakdown Voltage I = 5 A, V G = V V BV T J Breakdown Voltage Temperature Coefficient I = 5 A, referenced to 5 C 6 mv/ C V = 4 V, V G = V I Zero Gate Voltage rain Current A T J = 5 C 5 I G Gate to ource Leakage Current V G = V, V = V na On Characteristics V G(th) Gate to ource Threshold Voltage V G = V, I = 5 A..9 3. V V G(th) T J Gate to ource Threshold Voltage Temperature Coefficient I = 5 A, referenced to 5 C -6 mv/ C V G = V, I = 3.3 A 7. 8.5 r (on) tatic rain to ource On Resistance V G = 4.5 V, I =.6 A 9.5.5 m V G = V, I = 3.3 A, T J = 5 C 9.5. g F Forward Transconductance V = 5 V, I = 3.3 A 6 ynamic Characteristics C iss Input Capacitance 6 68 pf V = 5 V, V G = V, C oss Output Capacitance 48 635 pf f = MHz C rss Reverse Transfer Capacitance 65 pf R g Gate Resistance.9.4 witching Characteristics t d(on) Turn-On elay Time 9 8 ns t r Rise Time V = 5 V, I = 3.3 A, 4 ns t d(off) Turn-Off elay Time V G = V, R GEN = 6 33 ns t f Fall Time 3 ns Total Gate Charge V G = V to V 9 nc Q g(tot) Total Gate Charge V G = V to 4.5 V V = 5 V 4 nc Q gs Total Gate Charge I = 3.3 A 5 nc Q gd Gate to rain Miller Charge 3 nc rain-ource iode Characteristics V G = V, I = 3.3 A (Note ).86. V ource to rain iode Forward Voltage V V G = V, I =.9 A (Note ).75. t rr Reverse Recovery Time 4 38 ns I F = 3.3 A, di/dt = A/ s Q rr Reverse Recovery Charge 7 4 nc NOTE:. R JA is determined with the device mounted on a in pad oz copper pad on a.5 x.5 in. board of FR-4 material. R JC is guaranteed by design while R CA is determined by the user's board design. a. 53 C/W when mounted on a in pad of oz copper b.5 C/W when mounted on a minimum pad of oz copper. Pulse Test: Pulse Width < s, uty cycle <. %. 3. E A of 58 mj is based on starting T J = 5 o C, L = mh, I A =.8 A, V = 7 V, V G = V. % test at L =. mh, I A = A.
Typical Characteristics T J = 5 C unless otherwise noted I, RAIN CURRENT (A) NORMALIZE RAIN TO OURCE ON-REITANCE 3 4.6.4...8 Figure. I = 3.3 A V G = V V G = V V G = 6 V V G = 4.5 V V G = 4 V PULE URATION = 8 s UTY CYCLE =.5% MAX V, RAIN TO OURCE VOLTAGE (V) V G = 3.5 V V G = 3 V NORMALIZE RAIN TO OURCE ON-REITANCE. V G = 6 V V G = V.5 I, RAIN CURRENT (A) On-Region Characteristics Figure. Normalized On-Resistance vs rain Current and Gate Voltage.6-75 -5-5 5 5 75 5 5 T J, JUNCTION TEMPERATURE ( o C) r(on), RAIN TO OURCE ON-REITANCE (m ) 4. 3.5 3..5..5 V G = 3.5 V I = 3.3 A PULE URATION = 8 s UTY CYCLE =.5% MAX V G = 4 V T J = 5 o C T J = 5 o C V G = 4.5 V PULE URATION = 8 s UTY CYCLE =.5% MAX 4 6 8 V G, GATE TO OURCE VOLTAGE (V) Figure 3. Normalized On- Resistance vs Junction Temperature Figure 4. On-Resistance vs Gate to ource Voltage I, RAIN CURRENT (A) PULE URATION = 8 s UTY CYCLE =.5% MAX V = 5 V T J = 5 o C T J = 5 o C T J = -55 o C 3 4 5 V G, GATE TO OURCE VOLTAGE (V) Figure 5. Transfer Characteristics I, REVERE RAIN CURRENT (A) 6.. V G = V T J = 5 o C T J = 5 o C T J = -55 o C....4.6.8.. V, BOY IOE FORWAR VOLTAGE (V) Figure 6. ource to rain iode Forward Voltage vs ource Current 3
Typical Characteristics T J = 5 C unless otherwise noted VG, GATE TO OURCE VOLTAGE (V) IA, AVALANCHE CURRENT (A) 8 6 4 I = 3.3 A 3 6 9 5 8 Figure 7. V = 5 V V = V Q g, GATE CHARGE (nc) V = V f = MHz V G = V. V, RAIN TO OURCE VOLTAGE (V) Gate Charge Characteristics Figure 8. Capacitance vs rain to ource Voltage T J = 5 o C T J = 5 o C T J = o C.. t AV, TIME IN AVALANCHE (ms) CAPACITANCE (pf) I, RAIN CURRENT (A) 5 Limited by Package V G = 4.5 V C iss C oss C rss V G = V R JC = 5. o C/W 5 5 75 5 5 T c, CAE TEMPERATURE ( o C) Figure 9. Unclamped Inductive witching Capability Figure. Maximum Continuous rain Current vs Case Temperature I, RAIN CURRENT (A) 5 s ms ms THI AREA I LIMITE BY r (on) ms INGLE PULE. s T J = MAX RATE s R JA = 5 o C/W C T A = 5 o C... V, RAIN to OURCE VOLTAGE (V) P(PK), PEAK TRANIENT POWER (W) V G = V INGLE PULE R JA = 5 o C/W T A = 5 o C.5-4 -3 - - t, PULE WITH (sec) Figure. Forward Bias afe Operating Area Figure. ingle Pulse Maximum Power issipation 4
Typical Characteristics T J = 5 C unless otherwise noted r(t), NORMALIZE EFFECTIVE TRANIENT THERMAL REITANCE.. UTY CYCLE-ECENING ORER =.5...5.. INGLE PULE uty Cycle, = t / t. -4-3 - - t, RECTANGULAR PULE URATION (sec) Figure 3. Transient Thermal Response Curve P M t t NOTE: Z θja (t) = r(t) x R θja R θja = 5 C/W Peak T J = P M x Z θja (t) + T A 5
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