Cool MOS Power Transistor V DS @ T jmax 65 V Feature R DS(on).6 Ω New revolutionary high voltage technology Worldwide best R DS(on) in TO5 and TO5 I D 7.3 Ultra low gate charge Periodic avalanche rated Extreme dv/dt rated High peak current capability Improved transconductance PTO53 PTO53 Type Package Ordering Code PTO53 Q67S3 PTO53 Marking 7N6C3 7N6C3 Maximum Ratings Parameter Symbol Value Unit Continuous drain current T C = 5 C T C = C I D 7.3.6 Pulsed drain current, t p limited by T jmax I D puls.9 valanche energy, single pulse I D = 5.5, V DD = 5 V E S 3 mj valanche energy, repetitive t R limited by T ) jmax E R.5 I D = 7.3, V DD = 5 V valanche current, repetitive t R limited by T jmax I R 7.3 Reverse diode dv/dt dv/dt 6 V/ns I S =7.3, V DS =8V, T j =5 C Gate source voltage static V GS ± V Gate source voltage C (f >Hz) V GS ±3 Power dissipation, T C = 5 C P tot 83 W Operating and storage temperature T j, T stg 55... +5 C Page
Maximum Ratings Parameter Symbol Value Unit Drain Source voltage slope dv/dt 5 V/ns V DS = 8 V, I D = 7.3, T j = 5 C Thermal Characteristics Parameter Symbol Values Unit min. typ. max. Thermal resistance, junction case R thjc.5 K/W Thermal resistance, junction ambient, leaded R thj 75 SMD version, device on PCB: R thj @ min. footprint @ 6 cm cooling area ) 75 5 Soldering temperature, T sold 6 C.6 mm (.63 in.) from case for s 3) Electrical Characteristics, at Tj=5 C unless otherwise specified Parameter Symbol Conditions Values Unit min. typ. max. Drainsource breakdown voltage V (BR)DSS V GS =V, I D =.5m 6 V DrainSource avalanche breakdown voltage V (BR)DS V GS =V, I D =7.3 7 Gate threshold voltage V GS(th) I D =35µΑ, V GS =V DS. 3 3.9 Zero gate voltage drain current I DSS V DS =6V, V GS =V, T j =5 C, T j =5 C Gatesource leakage current I GSS V GS =3V, V DS =V n Drainsource onstate resistance R DS(on) V GS =V, I D =.6, T j =5 C T j =5 C.5.5.6 Gate input resistance R G f=mhz, open Drain.8.6 µ Ω Page
Electrical Characteristics, at T j = 5 C, unless otherwise specified Parameter Symbol Conditions Values Unit min. typ. max. Transconductance g fs V DS *I D *R DS(on)max, 6 S I D =.6 Input capacitance C iss V GS =V, V DS =5V, 79 pf Output capacitance C oss f=mhz 6 Reverse transfer capacitance C rss 6 Effective output capacitance, ) energy related Effective output capacitance, 5) time related C o(er) V GS =V, V DS =V to 8V 3 pf C o(tr) 55 Turnon delay time t d(on) V DD =38V, V GS =/3V, 6 ns Rise time t r I D =7.3, R G =Ω, 3.5 Turnoff delay time t d(off) T j =5 C 6 Fall time t f 7 5 Gate Charge Characteristics Gate to source charge Q gs V DD =8V, I D =7.3 3 nc Gate to drain charge Q gd 9. Gate charge total Q g V DD =8V, I D =7.3, 7 V GS = to V Gate plateau voltage V (plateau) V DD =8V, I D =7.3 5.5 V Repetitve avalanche causes additional power losses that can be calculated as PV =E R *f. Device on mm*mm*.5mm epoxy PCB FR with 6cm² (one layer, 7 µm thick) copper area for drain connection. PCB is vertical without blown air. 3 Soldering temperature for TO63: C, reflow Co(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from to 8% V DSS. 5 Co(tr) is a fixed capacitance that gives the same charging time as C oss while V DS is rising from to 8% V DSS. Page 3
Electrical Characteristics, at T j = 5 C, unless otherwise specified Parameter Symbol Conditions Values Unit min. typ. max. Inverse diode continuous I S T C =5 C 7.3 forward current Inverse diode direct current, I SM.9 pulsed Inverse diode forward voltage V SD V GS =V, I F =I S. V Reverse recovery time t rr V R =8V, I F =I S, 6 ns Reverse recovery charge Q rr di F /dt=/µs µc Peak reverse recovery current I rrm 8 Peak rate of fall of reverse di rr /dt 8 /µs recovery current Typical Transient Thermal Characteristics Symbol Value Unit Symbol Value Unit typ. typ. Thermal resistance Thermal capacitance R th. K/W C th. Ws/K R th.6 C th.578 R th3.85 C th3.65 R th.38 C th.867 R th5.37 C th5.795 R th6. C th6.5 P tot (t) T j R th R th,n T case External Heatsink C th C th C th,n T amb Page
Power dissipation P tot = f (T C ) W Safe operating area I D = f ( V DS ) parameter : D =, T C =5 C 8 7 Ptot 6 ID 5 3 tp =. ms tp =. ms tp =. ms tp = ms DC 6 8 C 6 T C V 3 V DS 3 Transient thermal impedance Z thjc = f (t p ) parameter: D = t p /T K/W Typ. output characteristic I D = f (V DS ); T j =5 C parameter: t p = µs, V GS V V 8V 7V ZthJC ID 6 6,5V D =.5 D =. D =. D =.5 D =. D =. single pulse 8 6V 5,5V 5V,5V 3 7 6 5 3 s t p Page 5 5 5 V 5 DS V
5 Typ. output characteristic I D = f (V DS ); T j =5 C parameter: t p = µs, V GS 6 Typ. drainsource on resistance R DS(on) =f(i D ) parameter: T j =5 C, V GS 3 V 8V 6.5V 6V Ω 8 V.5V ID 9 8 7 6 5 5.5V 5V R DS(on) 7 6 5 5V 5.5V 6V 6.5V 8V V 3 3.5V V 6 8 6 8 V 5 7 Drainsource onstate resistance R DS(on) = f (T j ) parameter : I D =.6, V GS = V 3. Ω V DS 6 8 5 I D 8 Typ. transfer characteristics I D = f ( V GS ); V DS x I D x R DS(on)max parameter: t p = µs.8 5 C RDS(on)..6 ID 8 6 5 C. 8.8. 98% typ 6 6 6 C 8 T j Page 6 6 8 6 V V GS
9 Typ. gate charge V GS = f (Q Gate ) parameter: I D = 7.3 pulsed 6 V Forward characteristics of body diode I F = f (V SD ) parameter: T j, tp = µs VGS. V DS max.8 V DS max IF 8 6 T j = 5 C typ T j = 5 C typ T j = 5 C (98%) T j = 5 C (98%) 8 6 8 nc 3 Q Gate Typ. drain current slope di/dt = f(r G ), inductive load, T j = 5 C par.: V DS =38V, V GS =/+3V, I D =7.3 3 /µs..8..6. V 3 V SD Typ. switching time t = f (R G ), inductive load, T j =5 C par.: V DS =38V, V GS =/+3V, I D =7.3 5 ns di/dt t 35 3 5 5 td(off) di/dt(on) 5 di/dt(off) 5 5 td(on) tf tr 6 8 Ω 3 R G Page 7 6 8 Ω 3 R G
3 Typ. switching time t = f (I D ), inductive load, T j =5 C par.: V DS =38V, V GS =/+3V, R G =Ω 9 ns Typ. drain source voltage slope dv/dt = f(r G ), inductive load, T j = 5 C par.: V DS =38V, V GS =/+3V, I D =7.3 V/ns 7 td(off) 8 t 6 5 dv/dt 7 6 5 3 tf td(on) tr 3 dv/dt(on) dv/dt(off) 3 5 6 8 I D 5 Typ. switching losses E = f (I D ), inductive load, T j =5 C par.: V DS =38V, V GS =/+3V, R G =Ω 6 8 Ω 3 R G 6 Typ. switching losses E = f(r G ), inductive load, T j =5 C par.: V DS =38V, V GS =/+3V, I D =7.3.5 *) E on includes SDP6S6 diode commutation losses. mws. *) E on includes SDP6S6 diode commutation losses. mws.6. E.5 E... Eoff.8 Eoff.6 Eon*.5 Eon*.. 3 5 6 8 I D 6 8 Ω 3 R G Page 8
7 valanche SO I R = f (t R ) par.: T j 5 C 8 valanche energy E S = f (T j ) par.: I D = 5.5, V DD = 5 V 8 6 mj IR 6 5 T j(strt) =5 C T j(strt) =5 C ES 8 6 3 8 6 3 µs t R 9 Drainsource breakdown voltage V (BR)DSS = f (T j ) 7 6 8 C 6 T j valanche power losses P R = f (f ) parameter: E R =.5mJ 5 V W V(BR)DSS 68 66 6 PR 3 6 6 58 56 5 6 6 C 8 T j 5 MHz 6 f Page 9
Typ. capacitances C = f (V DS ) parameter: V GS =V, f= MHz pf Typ. C oss stored energy E oss =f(v DS ) 5.5 µj 3 C iss.5 C Eoss 3.5 C oss 3.5 C rss.5.5 3 V 6 V DS 3 V 6 V DS Definition of diodes switching characteristics Page
PTO53 (DPK) PTO53 (IPK) 6.5 +.5. +.5.3. C 6.. ±. 5. ±. B +.8.9..5 max per side 9.3 ±. 3 x.75 ±. +.8.5..8..56.5 M B C GPT95 ll metal surfaces tin plated, except area of cut. Page
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