PoarHT TM Power MOSFET N-Channe Enhancement Mode Avaanche Rated S = 6 V I D = A R DS(on) 6. mω Symbo Test Conditions Maximum Ratings TO-3P (IXTQ) S = C to C 6 V V DGR = C to C; R GS = MΩ 6 V Transient ±3 V M Continuous ± V I D = C A I D(RMS) Externa ead current imit A I DM = C, puse width imited by M 4 A I AR = C 6 A E AR = C 8 mj E AS = C 4. J G D S G = Gate S = Source D = Drain TAB = Drain (TAB) dv/dt I S I DM, di/dt A/µs, V DD S, V/ns C, R G = 4 Ω P D = C 74 W -55... + C M C T stg -55... + C T L.6 mm (.6 in.) from case for s 3 C T SOLD Pastic body for s 6 C M d Mounting torque (TO-3P).3/ Nm/b.in. Weight TO-3P 5.5 g Features Internationa standard package Uncamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Advantages Symbo Test Conditions Characteristic Vaues ( = C, uness otherwise specified) Min. Typ. Max. BS = V = µa 6 V (th) = = µa.5 5. V I GSS = ± V DC, = ± na I DSS = S µa = V = C µa R DS(on) = V = 6A 6. m Ω = 5 V = 4A 5. m Ω Puse test, t 3 µs, duty cyce d % Easy to mount Space savings High power density 6 IXYS A rights reserved DS9973E(/5)
Symbo Test Conditions Characteristic Vaues ( = C, uness otherwise specified) Min. Typ. Max. TO-3P (IXTQ) Outine g fs = V; I D = 6A, puse test 45 65 S C iss 54 pf C oss = V, = V, f = MHz 35 pf C rss 36 pf t d(on) 35 ns t r = V, =.5 S = 6 A 6 ns t d(off) R G = 3.3 Ω (Externa) 9 ns t f 4 ns Q g(on) nc Q gs = V, =.5 S =.5 I D 37 nc Q gd nc R thjc. C/W R thcs. C/W Source-Drain Diode Characteristic Vaues ( = C, uness otherwise specified) Symbo Test Conditions Min. Typ. Max. I S = V A I SM Repetitive 4 A V SD I F = I S, = V,.5 V Puse test, t 3 µs, duty cyce d % t rr I F = A, -di/dt = A/µs 9 ns Q RM V R = 3 V, = V. µc IXYS reserves the right to change imits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,59 4,93,844 5,49,96 5,37,48 6,6,665 6,44,65 B 6,683,344 6,77,585 one or moreof the foowing U.S. patents: 4,8,7 5,7,8 5,63,37 5,38, 6,9,3 B 6,534,343 6,7,45B 6,9,69 4,88,6 5,34,796 5,87,7 5,486,75 6,36,78 B 6,583,5 6,7,463 6,77,478 B
Fig.. Output Characteristics @ ºC = V 3 3 Fig.. Extended Output Characteristics @ ºC = V..4.6.8..4 V D S - Vots.5.5.5 3 3.5 4 4.5 5 V D S - Vots Fig. 3. Output Characteristics @ ºC = V. Fig. 4. R DS(on) Normaized to.5 I D Vaue vs. Junction Tem perature = V R D S ( o n ) - Normaized.8.6.4. I D = A I D = A.4.8..6.4.8 V D S - Vots.8.6 - - - Degrees Centigrade.4 Fig. 5. R DS(on) Normaized to.5 I D Vaue vs. Drain Current 9 Fig. 6. Drain Current vs. Case Temperature. 8 Externa-Lead Current Limit R D S ( o n ) - Normaized.8.6.4. = = ºC = V = ºC 7 6 4 3.8.6 3 3 - - - Degrees Centigrade 6 IXYS A rights reserved
Fig. 7. Input Admittance Fig. 8. Transconductance 9 8 = ºC ºC -4ºC g f s - Siemens 7 6 4 3 = -4ºC ºC ºC.5 3 3.5 4 4.5 5 5.5 6 6.5 7 7.5 V G S - Vots 3 3 Fig. 9. Source Current vs. Source-To-Drain Votage 9 8 7 Fig.. Gate Charge = V I D = A I G = ma I S - Amperes VG S - Vots 6 5 4 = ºC = ºC 3.4.6.8..4.6 V S D - Vots Q G - nanocouombs, Fig.. Capacitance Fig.. Forw ard-bias Safe Operating Area f = MHz Capacitance - picofarads,, Ciss Coss Crss R DS(on) Limit = ºC DC ms ms µs = ºC 5 5 3 35 4 - Vots V D S - Vots IXYS reserves the right to change imits, test conditions, and dimensions.
Fig. 3. M axim um Transient Therm a Resistance. R ( t h ) J C - ºC / W.... Pu s e W id th - miis e c onds 6 IXYS A rights reserved