N-Channel JFETs J SST J SST J SST Part Number V GS(off) (V) r DS(on) Max ( ) I D(off) Typ (pa) t ON Typ (ns) J/SST to 5 4 J/SST to 5 5 5 4 J/SST 5 4 Low On-Resistance: < Fast Switching t ON : 4 ns Low Leakage: 5 pa Low Capacitance: pf Low Insertion Loss Low Error Voltage High-Speed Analog Circuit Performance Negligible Off-Error, Excellent Accuracy Good Frequency Response, Low Glitches Eliminates Additional Buffering Analog Switches Choppers Sample-and-Hold Normally On Switches Current Limiters The J/SST series consists of all-purpose analog switches designed to support a wide range of applications. The J/SST are useful in a high-gain amplifier mode. For similar products in TO-6AA(TO-8) packaging, see the N/PN/SST49 series, N4856A/4857A/4858A, and N5564/5565/5566 (duals) data sheets. The J series, TO-6AA (TO-9) plastic package, provides low cost, while the SST series, TO6 (SOT-) package, provides surface-mount capability. Both the J and SST series are available in tape-and-reel for automated assembly (see Packaging Information). TO-6AA (TO-9) TO-6 (SOT-) D D S S G G Top View J J J Top View SST (C)* SST (C)* SST (C)* *Marking Code for TO-6 Gate-Drain, Gate-Source Voltage............................... 5 V Gate Current................................................. 5 ma Lead Temperature ( / 6 from case for seconds).............. C Storage Temperature................................... 55 to 5 C Operating Junction Temperature.......................... 55 to 5 C For applications information see AN5. Power Dissipation a (TO-6).................................................. (TO-6AA)............................................... Notes a. Derate.8 mw/ C above 5 C 5 mw mw Document Number: 7 S-8 Rev. E, 4-Jun- 7-
Limits J/SST J/SST J/SST Parameter Symbol Test Conditions Typ a Min Max Min Max Min Max Unit Static Gate-Source Breakdown Voltage V (BR)GSS I G = A, V DS = V 55 5 5 5 Gate-Source Cutoff Voltage V GS(off) V DS = 5 V, I D = A 5 V Saturation Drain Current b I DSS V DS = 5 V, V GS = V 5 ma Gate Reverse Current I GSS T A = 5 C V GS = 5 V, V DS = V.5 na Gate Operating Current I G V DG = 5 V, I D = ma 5 pa Drain Cutoff Current I D(off) T A = 5 C V DS = 5 V, V GS = V.5 na Drain-Source On-Resistance r DS(on) V GS = V, V DS =. V 5 Gate-Source Forward Voltage V GS(F) I G = ma, V DS = V.7 V Dynamic Common-Source Forward Transconductance Common-Source Output Conductance g fs g os V DS = V, I D = ma f = khz 6 ms 5 S Drain-Source On-Resistance r ds(on) V GS = V, I D = ma f = khz 5 Common-Source Input Capacitance Common-Source Reverse Transfer Capacitance C iss C rss V DS = V, V GS = V f = MHz 7 5 5 5 pf Equivalent Input Noise Voltage e n V DG = V, I D = ma f = khz nv Hz Switching Turn-On Time Turn-Off Time t d(on) t r VDD V = V, V GS(H) = V t d(off) See Switching Circuit 6 t f 5 ns Notes a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. NCB b. Pulse test: PW s duty cycle %. 7- Document Number: 7 S-8 Rev. E, 4-Jun-
On-Resistance and Drain Current vs. Gate-Source Cutoff Voltage On-Resistance vs. Drain Current r DS(on) Drain-Source On-Resistance ( Ω ) r DS @ I D = ma, V GS = I DSS @ V DS = V, V GS = r DS I DSS I DSS Saturation Drain Current (ma) r DS(on) Drain-Source On-Resistance ( Ω ) T A = 5 C V GS(off) = V 4 V 8 V 4 6 8 V GS(off) Gate-Source Cutoff Voltage (V) r DS(on) Drain-Source On-Resistance ( Ω ) On-Resistance vs. Temperature I D = ma r DS changes X.7%/ C V GS(off) = V 4 V 8 V Turn-On Switching 55 5 5 5 5 45 65 85 5 5 4 6 8 Switching Time (ns) 5 4 t d(on) @ I D = ma t r approximately independent of I D V DD = 5 V, R G = 5 Ω V GS(L) = V t r t d(on) @ I D = ma T A Temperature ( _C) V GS(off) Gate-Source Cutoff Voltage (V) Turn-Off Switching Capacitance vs. Gate-Source Voltage t d(off) independent of device V GS(off) V DD = 5 V, V GS(L) = V f = MHz 4 4 Switching Time (ns) 8 t d(off) t f @ V GS(off) = V Capacitance (pf) 8 C iss @ V DS = V 6 t f @ V GS(off) = 8 V 6 C rss @ V DS = V 4 6 8 4 8 6 V GS Gate-Source Voltage (V) Document Number: 7 S-8 Rev. E, 4-Jun- 7-
en Noise Voltage nv / Hz Noise Voltage vs. Frequency V DS = V I D = ma I D = ma g fs Forward Transconductance Forward Transconductance and Output Conductance vs. Gate-Source Cutoff Voltage 5 g fs and g os @ V DS = V 5 V GS = V, f = khz g fs g os 5 gos Output Conductance k k k 4 6 8 f Frequency (Hz) V GS(off) Gate-Source Cutoff Voltage (V) na na Gate Leakage Current I GSS @ 5 C T A = 5 C I D = ma Common-Gate Input Admittance V DG = V I D = ma T A = 5 C g ig I G Gate Leakage pa pa T A = 5 C ma ma ma I GSS @ 5 C b ig pa. pa 6 8 4 V DG Drain-Gate Voltage (V). 5 Common-Gate Forward Admittance V DG = V I D = ma T A = 5 C Common-Gate Reverse Admittance V DG = V I D = ma T A = 5 C g fg b fg. b rg g fg +g rg. g rg. 5. 5 7-4 Document Number: 7 S-8 Rev. E, 4-Jun-
Common-Gate Output Admittance V DG = V I D = ma T A = 5 C V GS(off) = 4 V Output Characteristics b og g og V GS = V.5..5.. 5.5 4 6 8 V DS Drain-Source Voltage (V) Output Characteristics Transfer Characteristics V GS(off) = 4 V V GS(off) = 4 V V DS = V 4 6 8 V GS = V.5..5..5...4.6.8. T A = 55 C 5 C 5 C 4 5 V DS Drain-Source Voltage (V) V GS Gate-Source Voltage (V) V DD J/SST J/SST J/SST R L V GS(L) V 7 V 5 V R L * OUT I D(on) ma 6 ma ma V GS(H) *Non-inductive V GS(L) k 5 Rise Time < ns Fall Time < ns Pulse Width ns PRF MHz Rise Time.4 ns Input Resistance M Input Capacitance.5 pf V GS Scope 5 Document Number: 7 S-8 Rev. E, 4-Jun- 7-5
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