ID(rms)... DSS... Insulated Type -elements in a pack Thermistor inside UL Recognized Yellow Card No.E8 File No.E8 PPLICTION C motor control of forklift (battery power source), UPS OUTLINE DRING & CIRCUIT DIGRM Dimensions in mm. 9..9.. (.) () N P (.) () (.) (). (.8). U 9. -. 8 (8.).9. 9.. 8 9 LBEL. (SCREING DEPTH) B CIRCUIT DIGRM P Tc measured point Housing Type of and B (Tyco Electronics P/N:) : 9- B: 988- ()GUP ()SUP (8)GP ()SP (9)GP ()SP ()GUN ()SUN N U () ()GN ()SN ()GN ()SN () ()SUP ()GUP ()TH ()SP (8)GP ()TH ()SP (9)GP ()SUN ()GUN ()SN ()GN ()SN ()GN B May
BSOLUTE MXIMUM RTINGS ( unless otherwise specified.) DSS GSS ID IDM ID IS* ISM* PD* PD* Tch Tstg iso Item Drain-source voltage Gate-source voltage Drain current valanche current Source current Maximum power dissipation Channel temperature Storage temperature Isolation voltage Mounting torque eight G-S Short D-S Short TC = C* Pulse* L = µh Pulse* Pulse* TC = C TC = C* Main terminal to base plate, C min. Main Terminal M Mounting M Typical value Ratings ± 9 ~ + ~ +. ~.. ~. C C N m N m g ELECTRICL CHRCTERISTICS ( unless otherwise specified.) IDSS GS(th) IGSS rds(on) (chip) DS(ON) (chip) R(lead) Ciss Coss Crss QG tr tf trr* Qrr* SD* Rth(ch-c) Rth(ch-c ) Rth(c-f) Rth(c -f ) Item Drain cutoff current Gate-source threshold voltage Gate leakage current Static drain-source On-state resistance Static drain-source On-state voltage Lead resistance Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Reverse recovery time Reverse recovery charge Source-drain voltage Thermal resistance Contact thermal resistance DS = DSS, GS = ID = m, DS = GS = GSS, DS = ID = GS = ID = GS = ID = terminal-chip DS = GS = DD = 8, ID =, GS = DD = 8, ID =, GS = GS = RG =.Ω, switching operation IS = IS =, GS = MOSFET part (/ module)* MOSFET part (/ module)* Case to fin, Thermal grease pplied* 8 (/ module) Case to fin, Thermal grease pplied*, * 8 (/ module) Min.. Limits Typ....8.9.. 9 8...9 Max........9 m µ mω mω nf nc ns ns µc C/ THERMISTOR PRT Parameter Limits Min. Typ. RTH* Resistance TTH = C* B* B Constant Resistance at TTH = C, C* * : It is characteristics of the anti-parallel, source to drain free-wheel diode (FDi). * : Pulse width and repetition rate should be such that the device channel temperature (Tch) does not exceed Tch max rating. * : TC measured point is just under the chips. If use this value, Rth(f-a) should be measured just under the chips. * : Pulse width and repetition rate should be such as to cause negligible temperature rise. * : TTH is thermistor temperature. * : B = (InR-InR)/(/T-/T) R: Resistance at T(K), R: Resistance at T(K) * : TC measured point is shown in page OUTLINE DRING. * 8: Typical value is measured by using Shin-Etsu Chemical Co., Ltd G-. Max. kω K May
PERFORMNCE CURES DRIN CURRENT ID () OUTPUT CHRCTERISTICS (TYPICL) GS = 9..8... DRIN CURRENT ID () TRNSFER CHRCTERISTICS (TYPICL) DS = 9 DRIN-SOURCE OLTGE DS () GTE-SOURCE OLTGE GS () DRIN-SOURCE ON-STTE RESISTNCE rds(on) (mω)........ DRIN-SOURCE ON-STTE OLTGE S. TEMPERTURE (TYPICL) ID = GS = GS = 8 GTE THRESHOLD OLTGE GS(th) () GTE THRESHOLD OLTGE S. TEMPERTURE (TYPICL) DS = ID = m 8 CHNNEL TEMPERTURE Tch ( C) CHNNEL TEMPERTURE Tch ( C) DRIN-SOURCE ON-STTE OLTGE DS(ON) ()...... DRIN-SOURCE ON-STTE OLTGE S. GTE BIS (TYPICL) ID = ID = ID = 8 CPCITNCE (nf) CPCITNCE S. DRIN-SOURCE OLTGE (TYPICL) GS = Ciss Coss Crss GTE-SOURCE OLTGE GS () DRIN-SOURCE OLTGE DS () May
GTE-SOURCE OLTGE GS () 8 GTE CHRGE CHRCTERISTICS (TYPICL) ID = DD = DD = 8....8.9. SOURCE CURRENT IS () FREE-HEEL DIODE FORRD CHRCTERISTICS (TYPICL) GS = GTE CHRGE QG (nc) SOURCE-DRIN OLTGE SD () SITCHING TIME (ns) HLF-BRIDGE SITCHING CHRCTERISTICS (TYPICL) tr : tf DD = 8 GS = ± RG =.Ω SITCHING TIME (ns) HLF-BRIDGE SITCHING CHRCTERISTICS (TYPICL) : DD = 8 GS = ± ID = tr tf DRIN CURRENT ID () GTE RESISTNCE RG (Ω) SITCHING LOSS (mj/pulse) HLF-BRIDGE SITCHING CHRCTERISTICS (TYPICL) Esw(off) Esw(on) Err : DD = 8 GS = ± RG =.Ω SITCHING LOSS (mj/pulse) HLF-BRIDGE SITCHING CHRCTERISTICS (TYPICL) : DD = 8 GS = ± ID = Esw(off) Esw(on) Err DRIN CURRENT ID () GTE RESISTNCE RG (Ω) May
Irr (), trr (ns) REERSE RECOERY CHRCTERISTICS OF FREE-HEEL DIODE (TYPICL) trr Irr : DD = 8 GS = ± RG =.Ω NORMLIZED TRNSIENT THERML IMPEDNCE Zth(ch-c) TRNSIENT THERML IMPEDNCE CHRCTERISTICS Single pulse Per unit base = Rth(ch-c) =. C/ SOURCE CURRENT IS () TIME (s) CHIP LYOUT () (9) N P 9. 9. TrUP TrP TrP () (8) (9) TrUN TrN TrN LBEL SIDE U.8.8 9.8 May