AUTOMOTIVE GRADE INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Low V CE (on) Trench IGBT Technology Low Switching Losses 6µs SCSOA Square RBSOA % of the parts tested for ILM Positive V CE (on) Temperature Coefficient Soft Recovery Co-pak Diode Lead-Free, RoHS Compliant Automotive Qualified * G C E n-channel C V CES = 6V I C = 16A, T C = C tsc 6µs, T J(MAX) = 175 C V CE(on) typ. = 1.7V Benefits High Efficiency in a Wide Range of Applications Suitable for Applications in the Low to Mid-Range Frequencies Rugged Transient Performance for Increased Reliability Excellent Current Sharing in Parallel Operation Low EMI Base Part Number Package Type Standard Pack Form Quantity PG-TO27-3-93 G C E Gate Collector Emitter Orderable Part Number PG-TO27-3-93 Tube 25 Absolute Maximum Ratings Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (T A ) is 25 C, unless otherwise specified. Parameter Max. Units V CES Collector-to-Emitter Voltage 6 V I C @ T C = 25 C Continuous Collector Current 2 I C @ T C = C Continuous Collector Current 16 I NOMINAL Nominal Current 12 I CM Pulse Collector Current, V GE = 15V 36 A I LM Clamped Inductive Load Current, V GE = 2V I F NOMINAL Diode Nominal Current 12 I FM Diode Maximum Forward Current V GE Continuous Gate-to-Emitter Voltage ±2 Transient Gate-to-Emitter Voltage ±3 V P D @ T C = 25 C Maximum Power Dissipation 75 P D @ T C = C Maximum Power Dissipation 375 W T J Operating Junction and -55 to +175 T STG Storage Temperature Range C Soldering Temperature, for 1 sec. 3 (.63 in. (1.6mm) from case) G C E Thermal Resistance Parameter Typ. Max. Units R JC (IGBT) Thermal Resistance Junction-to-Case (each IGBT).2 R JC (Diode) Thermal Resistance Junction-to-Case (each Diode).5 C/W R CS Thermal Resistance, Case-to-Sink (flat, greased surface).2 R JA Thermal Resistance, Junction-to-Ambient (typical socket mount) * Qualification standards can be found at www.infineon.com 1 V 2.
Electrical Characteristics @ T J = 25 C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions V (BR)CES Collector-to-Emitter Breakdown Voltage 6 V V GE = V, I C = 5µA V (BR)CES / T J Temperature Coeff. of Breakdown Voltage.7 V/ C V GE = V, I C = 5mA (25 C-175 C) 1.7 2. I C = 12A, V GE = 15V, T J = 25 C V CE(on) Collector-to-Emitter Saturation Voltage 2. V I C = 12A, V GE = 15V, T J = 15 C 2.1 I C = 12A, V GE = 15V, T J = 175 C V GE(th) Gate Threshold Voltage. 6.5 V V CE = V GE, I C = 5.6mA V GE(th) / TJ Threshold Voltage temp. coefficient -16 mv/ C V CE = V GE, I C = 5.6mA (25 C-175 C) gfe Forward Transconductance 7 S V CE = 5V, I C = 12A I CES Collector-to-Emitter Leakage Current 1. µa V GE = V, V CE = 6V 2. ma V GE = V, V CE = 6V,T J = 175 C V FM Diode Forward Voltage Drop 1. 2.1 I F = 12A V 1.9 I F = 12A, T J = 175 C I GES Gate-to-Emitter Leakage Current ± na V GE = ±2V Switching Characteristics @ T J = 25 C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions Q g Total Gate Charge (turn-on) 25 375 I C = 12A Q ge Gate-to-Emitter Charge (turn-on) 65 9 nc V GE = 15V Q gc Gate-to-Collector Charge (turn-on) 15 V CC = V E on Turn-On Switching Loss 5.7 6.7 E off Turn-Off Switching Loss.2 5.2 mj E total Total Switching Loss 9.9 11.9 I C = 12A, V CC = V, V GE = 15V t d(on) Turn-On delay time 6 R G =.7, L = 7µH, T J = 25 C t r Rise time 125 155 ns Energy losses include tail & diode t d(off) Turn-Off delay time 1 17 reverse recovery t f Fall time 12 17 E on Turn-On Switching Loss 6. E off Turn-Off Switching Loss.7 mj E total Total Switching Loss 11.1 I C = 12A, V CC = V, V GE = 15V t d(on) Turn-On delay time R G =.7, L = 7µH, T J = 175 C t r Rise time 11 ns Energy losses include tail & diode t d(off) Turn-Off delay time 16 reverse recovery t f Fall time 125 C ies Input Capacitance 76 V GE = V C oes Output Capacitance 51 pf V CC = 3V C res Reverse Transfer Capacitance 23 f = 1.Mhz T J = 175 C, I C = A RBSOA Reverse Bias Safe Operating Area FULL SQUARE V CC = V, Vp 6V Rg =.7, V GE = +2V to V SCSOA Short Circuit Safe Operating Area V CC = V, Vp 6V 6 µs Rg = 5., V GE = +15V to V Erec Reverse Recovery Energy of the Diode 17 µj T J = 175 C t rr Diode Reverse Recovery Time 21 ns V CC = V, I F = 12A I rr Peak Reverse Recovery Current 5 A V GE = 15V, Rg =.7, L = 7µH Notes: V CC = % (V CES ), V GE = 2V, L = 3.5µH, R G = 7 tested in production ILM A. Pulse width limited by max. junction temperature. Refer to AN-16 for guidelines for measuring V (BR)CES safely. R is measured at T J approximately 9 C. Calculated continuous current based on maximum allowable junction temperature. Package IGBT current limit is 195A. Package diode current limit is12a. Note that current limitations arising from heating of the device leads may occur. 2 V 2.
I C (A) I C (A) I C (A) P tot (W) 25 15 7 6 5 5 25 5 75 125 15 175 T C ( C) Fig. 1 - Maximum DC Collector Current vs. Case Temperature 3 2 6 12 1 16 1 T C ( C) Fig. 2 - Power Dissipation vs. Case Temperature 1µsec µsec 1 1msec DC 1 1.1 Tc = 25 C Tj = 175 C Single Pulse 1 1 Fig. 3 - Forward SOA T C = 25 C, T J 175 C; V GE =15V 1 1 Fig. - Reverse Bias SOA T J = 175 C; V GE = 2V 2 36 3 V GE = 1V V GE = 15V V GE = 12V V GE = 1V V GE =.V 2 36 3 V GE = 1V V GE = 15V V GE = 12V V GE = 1V V GE =.V 2 1 12 6 2 6 1 Fig. 5 - Typ. IGBT Output Characteristics T J = - C; tp = 2µs 2 1 12 6 2 6 1 Fig. 6 - Typ. IGBT Output Characteristics T J = 25 C; tp = 2µs 3 V 2.
I F (A) 2 36 3 V GE = 1V V GE = 15V V GE = 12V V GE = 1V V GE =.V 2 36 3 - C 25 C 175 C 2 2 1 1 12 12 6 6 2 6 1. 1. 2. 3.. 5. V F (V) 1 Fig. 7 - Typ. IGBT Output Characteristics T J = 175 C; tp = 2µs 1 Fig. - Typ. Diode Forward Characteristics tp = 2µs 6 I CE = 6A I CE = 12A I CE = 195A 6 I CE = 6A I CE = 12A I CE = 195A 2 2 5 1 15 2 5 1 15 2 V GE (V) V GE (V) Fig. 9 - Typical V CE vs. V GE T J = - C Fig. 1 - Typical V CE vs. V GE T J = 25 C 1 6 I CE = 6A I CE = 12A I CE = 195A 2 36 3 TJ = - C T J = 25 C T J = 175 C 2 1 2 12 6 5 1 15 2 6 1 12 1 V GE (V) V GE (V) Fig. 11 - Typical V CE vs. V GE T J = 175 C Fig. 12 - Typ. Transfer Characteristics VCE = 5V; tp = 2µs V 2.
I RR (A) I RR (A) Energy (mj) Swiching Time (ns) Energy (mj) Swiching Time (ns) 25 2 15 td OFF 1 E ON t F t R 5 E OFF td ON 5 15 25 I C (A) 1 5 15 25 I C (A) Fig. 13 - Typ. Energy Loss vs. I C T J = 175 C; L =.7mH; V CE = V, R G =.7 ; V GE = 15V 16 Fig. 1 - Typ. Switching Loss vs. I C T J = 175 C; L =.7mH; V CE = V, R G =.7 ; V GE = 15V 1 12 1 E ON td OFF 6 E OFF t F t R td ON 2 1 2 3 5 6 1 1 2 3 5 6 Rg ( ) R G ( ) Fig. 15 - Typ. Energy Loss vs. R G T J = 175 C; L =.7mH; V CE = V, I CE = 12A; V GE = 15V 5 Fig. 16 - Typ. Switching Time vs. R G T J = 175 C; L =.7mH; V CE = V, I CE = 12A; V GE = 15V 5 R G =.7 35 R G = 35 3 3 R G = 2 25 25 R G = 5 2 5 15 25 2 1 2 3 5 6 I F (A) R G ( Fig. 17 - Typ. Diode I RR vs. I F T J = 175 C Fig. 1 - Typ. Diode I RR vs. R G T J = 175 C 5 V 2.
Capacitance (pf) V GE, Gate-to-Emitter Voltage (V) Energy (µj) Time (µs) I RR (A) Q RR (nc) 5 9 2A.7 35 3 7 6 5 2 1 12A 25 5 6A 2 6 di F /dt (A/µs) 3 3 5 6 7 di F /dt (A/µs) Fig. 19 - Typ. Diode I RR vs. dif/dt V CC = V; V GE = 15V; I F = 12A; T J = 175 C Fig. 2 - Typ. Diode Q RR vs. dif/dt V CC = V; V GE = 15V; T J = 175 C 3 2 1 25 15 R G =.7 R G = 1 R G = 2 R G = 5 2 16 12 T sc I sc 6 Current (A) 5 5 15 25 I F (A) 9 1 11 12 13 1 15 16 V GE (V) Fig. 21 - Typ. Diode E RR vs. I F T J = 175 C 16 Fig. 22 - V GE vs. Short Circuit Time V CC = V; T C = 25 C V CES = V Cies 12 VCES = 3V Coes Cres 1 3 5 5 15 25 3 Q G, Total Gate Charge (nc) Fig. 23 - Typ. Capacitance vs. V CE V GE = V; f = 1MHz Fig. 2 - Typical Gate Charge vs. V GE I CE = 12A 6 V 2.
1.1 D =.5 Thermal Response ( Z thjc ).1.2.1.5.2.1 R 1 R 2 R 3 R 1 R 2 R 3 J J 1 1 2 2 3 3.1 Ci= i Ri SINGLE PULSE Ci= i Ri.6121.2615 ( THERMAL RESPONSE ) Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc.1 1E-6 1E-5.1.1.1.1 t 1, Rectangular Pulse Duration (sec) R R.2.1 Ri ( C/W) I (sec) C C.53.165.912.93 1 Fig 25. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT) Thermal Response ( Z thjc ).1.1.1 D =.5.2.1.5.2.1 J J 1 1 2 2 3 3 Ci= i Ri Ci= i Ri R 1 R 2 R 3 R 1 R 2 R 3 Notes: SINGLE PULSE 1. Duty Factor D = t1/t2 ( THERMAL RESPONSE ) 2. Peak Tj = P dm x Zthjc + Tc.1 1E-6 1E-5.1.1.1.1 t 1, Rectangular Pulse Duration (sec) R R C C Ri ( C/W) I (sec).9.13.1275.13.1573.3167.1273.1 Fig 26. Maximum Transient Thermal Impedance, Junction-to-Case (DIODE) 7 V 2.
L L 1K VCC V + - VCC Rg Gate Charge Circuit Fig.C.T.1 - Gate Charge Circuit (turn-off) RBSOA Circuit Fig.C.T.2 - RBSOA Circuit diode clamp / X L DC VCC -5V Rg / DRIVER VCC R SH Switching Loss Fig.C.T.3 - S.C. SOA Circuit Fig.C.T. - Switching Loss Circuit R = VCC ICM C force K Rg VCC G force D1 22K.75µF C sense E sense E force Fig.C.T.5 - Resistive Load Circuit Fig.C.T.6 - BVCES Filter Circuit V 2.
6 5 tf 1 15 6 5 tr TEST CURRENT 1 15 12 12 3 9% I CE 1% V CE 1% I CE 9 6 3 3 1%I CE 9% I CE 1% V CE 9 6 3 - Eoff Loss -3.5 1 1.5 time(µs) - Eon Loss -3.5 1 1.5 time (µs) Fig. WF1 - Typ. Turn-off Loss Waveform @ T J = 175 C using Fig. CT. Fig. WF2 - Typ. Turn-on Loss Waveform @ T J = 175 C using Fig. CT. 1 12 Q RR 5 V CE 16 6 t RR 3 I CE 1 I F (A) 2 Vce (V) Ice (A) -2 - Peak I RR -6 -..1.6 1.1 time (µs) - - -.... 12. Time (us) Fig. WF3 - Typ. Diode Recovery Waveform @ T J = 175 C using Fig. CT. Fig. WF - Typ. S.C. Waveform @ T J = 25 C using Fig. CT.3 9 V 2.
Case Outline and Dimensions-PG-TO27-3-93 (Dimensions are shown in millimeters (inches)) PG-TO27-3-93 -Part Marking Information Part Number IR Logo AUGPS7D YWWA XX XX Date Code Y = Year WW = Work Week A = Automotive, Lead Free Lot Code 1 V 2.
Qualification Information Qualification Level Automotive (per AEC-Q11) This part number(s) passed Automotive qualification. Infineon s Industrial and Consumer qualification level is granted by extension of the higher Automotive level. Moisture Sensitivity Level PG-TO27-3-93 N/A Class H3B(+/ ) Human Body Model AEC-Q11-1 ESD Class C3 (+/ ) Charged Device Model AEC-Q11-5 RoHS Compliant Yes Highest passing voltage. Revision History Revision Date Subjects (major changes since last revision) 2. 12/12/216 Final Datasheet. 2.1 /31/217 Corrected typo error on part marking. 2.2 11/1/217 Updated with IFX nomenclature. 2.3 7/19/21 Updated with minor changes. 2. 12/3/21 Updated with package outline. Published by Infineon Technologies AG 1726 München, Germany Infineon Technologies AG 215 All Rights Reserved. IMPORTANT NOTICE The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics ( Beschaffenheitsgarantie ). With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. In addition, any information given in this document is subject to customer s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer s products and any use of the product of Infineon Technologies in customer s applications. The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. For further information on the product, technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies office (www.infineon.com). WARNINGS Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury. 11 V 2.