OptiMOS &!Power-Transistor Feature % N-Channel % Enhancement mode % Logic Level % High Current Rating % Excellent Gate Charge x R DS(on) product (FOM) %!Superior thermal resistance %!175 C operating temperature % Avalanche rated % dv/dt rated Ugkwj j qj fiuqfynsl@w tm X htruqnfsy Product Summary V DS V R DS(on) 6.4 m" I D A Ph- TO5-3 Type Package SPDN3SL-6 L Ph- TO5-3 Marking PN3L6 Maximum Ratings, at = 5 C, unless otherwise specified Parameter Symbol Value Unit Continuous drain current1) I D A T C =5 C Pulsed drain current I D puls T C =5 C Avalanche energy, single pulse E AS mj I D = A, V DD =5V, R GS =5" Repetitive avalanche energy, limited by max ) E AR 13 Reverse diode dv/dt dv/dt 6 kv/µs I S =A, V DS =4V, di/dt=a/µs, max =175 C Gate source voltage V GS ± V Power dissipation P tot 136 W T C =5 C Operating and storage temperature, T stg -55... +175 C IEC climatic category; DIN IEC 68-1 55/175/56 Page 1
Thermal Characteristics Parameter Symbol Values Unit min. typ. max. Characteristics Thermal resistance, junction - case R thjc -.7 1.1 K/W Thermal resistance, junction - ambient, leaded R thja - - SMD version, device on PCB: @ min. footprint R thja - - 75 @ 6 cm cooling area 3) - - Electrical Characteristics, at = 5 C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Static Characteristics Drain-source breakdown voltage V (BR)DSS - - V V GS =V, I D =1mA Gate threshold voltage, V GS = V DS V GS(th) 1. 1.6 I D = 85 µa Zero gate voltage drain current I DSS - µa V DS =V, V GS =V, =5 C.1 1 V DS =V, V GS =V, =15 C - Gate-source leakage current I GSS - 1 na V GS =V, V DS =V Drain-source on-state resistance R DS(on) - 6.8 9. m" V GS =4.5V, I D =A Drain-source on-state resistance R DS(on) - 4.7 6.4 V GS =V, I D =A 1Current limited by bondwire ; with an R thjc = 1.1K/W the chip is able to carry I D = 113A at 5 C, for detailed information see app.-note ANPS71E available at www.infineon.com/optimos Defined by design. Not subject to production test. 3Device on mm*mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 7 µm thick) copper area for drain connection. PCB is vertical without blown air. Page
Electrical Characteristics Parameter Symbol Conditions Values Unit min. typ. max. Dynamic Characteristics Transconductance g fs V DS $*I D *R DS(on)max, 36 7 - S I D =A Input capacitance C iss V GS =V, V DS =5V, - 19 5 pf Output capacitance C oss f=1mhz - 7 99 Reverse transfer capacitance C rss - 18 7 Turn-on delay time t d(on) V DD =15V, V GS =V, - 8 1 ns Rise time t r I D =A, - 19 9 Turn-off delay time t d(off) R G =3.6" - 35 53 Fall time t f - 4 36 Gate Charge Characteristics Gate to source charge Q gs V DD =4V, I D =A - 6 8 nc Gate to drain charge Q gd - 17.8 6.7 Gate charge total Q g V DD =4V, I D =A, - 5 68 V GS = to V Gate plateau voltage V (plateau) V DD =4V, I D =A - 3. - V Reverse Diode Inverse diode continuous I S T C =5 C - - A forward current Inv. diode direct current, pulsed I SM - - Inverse diode forward voltage V SD V GS =V, I F =A -.9 1.3 V Reverse recovery time t rr V R =15V, I F =l S, - 41 51 ns Reverse recovery charge Q rr di F /dt=a/µs - 46 58 nc Page 3
1 Power dissipation P tot = f (T C ) parameter: V GS $ 4 V 1 SPDN3SL-6 W Drain current I D = f (T C ) parameter: V GS $ V 55 SPDN3SL-6 A 1 45 1 P tot 9 8 ID 35 7 6 5 15 5 6 8 1 1 16 C 19 T C 6 8 1 1 16 C 19 T C 3 Safe operating area I D = f ( V DS ) parameter : D =, T C = 5 C A 3 SPDN3SL-6 t p = 7.6µs µs 4 Max. transient thermal impedance Z thjc = f (t p ) parameter : D = tp/t K/W 1 SPDN3SL-6 ID ZthJC -1 µs - D =.. 1 1 ms..5-3 single pulse..1-1 1 V V DS Page 4-4 -7-6 -5-4 -3 - s t p
5 Typ. output characteristic I D = f (V DS ); =5 C parameter: t p = 8 µs ID 1 SPDN3SL-6 Ptot = 136W A 9 8 7 6 i h V GS [V].5 1 1.5.5 3 3.5 4 V 5 V DS 7 Typ. transfer characteristics I D = f ( V GS ); V DS $ x I D x R DS(on)max parameter: t p = 8 µs 6 A 45 g e c a d b a.6 b.8 c 3. d 3. e 3.4 f 3.6 g 3.8 f h 4.5 i. 6 Typ. drain-source on resistance R DS(on) = f (I D ) parameter: V GS =V R DS(on) " 1 SPDN3SL-6 18 16 14 1 8 6 4 V GS [V] = d e 3. 3.4 f 3.6 d g 3.8 h 4.5 e i. 6 7 A 85 I D 8 Typ. forward transconductance g fs = f(i D ); =5 C parameter: g fs 9 S 7 f g i h ID 35 gfs 6 5 15 5.5 1 1.5.5 3 V 4 V GS 6 8 A 1 I D Page 5
9 Drain-source on-state resistance R DS(on) = f ( ) parameter : I D = A, V GS = V " 15 SPDN3SL-6 Typ. gate threshold voltage V GS(th) = f ( ) parameter: V GS = V DS.5 R DS(on) 1 11 9 8 7 98% VGS(th) V 1.5 83 #A.415 ma 6 1 5 typ 4 3.5 1-6 - 6 1 C -6-6 C 16 11 Typ. capacitances C = f (V DS ) parameter: V GS =V, f=1 MHz 4 1 Forward character. of reverse diode I F = f (V SD ) parameter:, tp = 8 µs 3 SPDN3SL-6 A pf C iss C IF 3 C oss C rss 1 = 5 C typ = 175 C typ = 5 C (98%) = 175 C (98%) 5 15 V V DS Page 6.4.8 1. 1.6.4 V 3 V SD
13 Typ. avalanche energy E AS = f ( ) par.: ID = A, V DD = 5 V, R GS = 5 " 6 mj 14 Typ. gate charge V GS = f (Q Gate ) parameter: ID = A pulsed 16 SPDN3SL-6 V EAS 18 16 1 1 VGS 1 8, V DS max,8 V DS max 6 8 6 4 5 45 65 85 5 15 145 C 185 6 nc 8 Q Gate 15 Drain-source breakdown voltage V (BR)DSS = f ( ) parameter: ID= ma 36 SPDN3SL-6 V V(BR)DSS 34 33 3 31 9 8 7-6 - 6 1 C Page 7
Package outline: PG-TO5-3 Page 8
SPDN3SL-6 Page 9
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