OptiMOS PowerTransistor Feature NChannel Enhancement mode Excellent Gate Charge x R DS(on) product (FOM) Superior thermal resistance 175 C operating temperature valanche rated dv/dt rated Product Summary V DS V R DS(on) 7.3 mω P TO252 311 Type Package Ordering Code P TO252 311 Q67S44 Marking PN7 Maximum Ratings, at T j = 25 C, unless otherwise specified Parameter Symbol Value Unit Continuous drain current1) T C =25 C Pulsed drain current puls T C =25 C valanche energy, single pulse E S 2 mj =, V DD =25V, R GS =25Ω Repetitive avalanche energy, limited by T jmax 2) E R 13 Reverse diode dv/dt dv/dt 6 kv/µs I S =, V DS =24V, di/dt=/µs, T jmax =175 C Gate source voltage V GS ± V Power dissipation P tot 136 W T C =25 C Operating and storage temperature T j, T stg 55... +175 C IEC climatic category; DIN IEC 681 55/175/56 Page 1
Thermal Characteristics Parameter Symbol Values Unit min. typ. max. Characteristics Thermal resistance, junction case R thjc.7 1.1 K/W Thermal resistance, junction ambient, leaded R thj SMD version, device on PCB: R thj @ min. footprint @ 6 cm 2 cooling area 3) 75 Electrical Characteristics, at T j = 25 C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Static Characteristics Drainsource breakdown voltage V GS =V, =1m V (BR)DSS V Gate threshold voltage, V GS = V DS V GS(th) 2.1 3 4 =85µ Zero gate voltage drain current SS µ V DS =V, V GS =V, T j =25 C.1 1 V DS =V, V GS =V, T j =125 C 1 Gatesource leakage current I GSS 1 n V GS =V, V DS =V Drainsource onstate resistance R DS(on) 5.7 7.3 mω V GS =V, = 1Current limited by bondwire ; with an R thjc = 1.1K/W the chip is able to carry = 6 at 25 C, for detailed information see app.note NPS71E available at www.infineon.com/optimos 2Defined by design. Not subject to production test. 3Device on mm*mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 7 µm thick) copper area for drain connection. PCB is vertical without blown air. Page 2
Electrical Characteristics Parameter Symbol Conditions Values Unit min. typ. max. Dynamic Characteristics Transconductance g fs V DS 2* *R DS(on)max, S = Input capacitance C iss V GS =V, V DS =25V, 16 217 pf Output capacitance C oss f=1mhz 7 Reverse transfer capacitance C rss 1 2 Turnon delay time t d(on) V DD =15V, V GS =V, 14 21 ns Rise time t r =, 36 54 Turnoff delay time t d(off) R G =6.8Ω 27 Fall time t f 25 38 Gate Charge Characteristics Gate to source charge Q gs V DD =24V, = 7.9.5 nc Gate to drain charge Q gd 14.1 21.1 Gate charge total Q g V DD =24V, =, V GS = to V 35 46.5 Gate plateau voltage V (plateau) V DD =24V, = 5.2 V Reverse Diode Inverse diode continuous I S T C =25 C forward current Inv. diode direct current, pulsed I SM Inverse diode forward voltage V SD V GS =V, I F =.9 1.3 V Reverse recovery time t rr V R =15V, I F =l S, 41 51 ns Reverse recovery charge Q rr di F /dt=/µs 46 58 nc Page 3
1 Power dissipation P tot = f (T C ) parameter: V GS 6 V 1 W 2 Drain current = f (T C ) parameter: V GS V 55 1 45 1 P tot 9 ID 35 7 25 15 5 1 1 1 C 19 T C 1 1 1 C 19 T C 3 Safe operating area = f ( V DS ) parameter : D =, T C = 25 C ID 3 2 R DS(on) = V DS / t p = 7.6µs µs µs 4 Max. transient thermal impedance Z thjc = f (t p ) parameter : D = tp/t ZthJC 1 K/W 1 D =. 1 1 ms 2...5 3 single pulse.2.1 V V DS Page 4 1 1 2 4 7 6 5 4 3 2 s t p
5 Typ. output characteristic = f (V DS ); T j =25 C parameter: t p = µs 1 Ptot = 136W i 9 7 V [V] GS a 4.2 b 4.5 c 4.8 d h 5. e 5.2 f 5.5 g g 5.8 h 6. i. f e 6 Typ. drainsource on resistance R DS(on) = f ( ) parameter: V GS R DS(on) 24 mω e f g 18 16 14 12 8 6 h i c b a 1 2 3 4 V 5.5 V DS 7 Typ. transfer characteristics = f ( V GS ); V DS 2 x x R DS(on)max parameter: t p = µs 7 d 4 2 V GS [V] = e f 5.2 5.5 g 5.8 h 6. i. 7 8 Typ. forward transconductance g fs = f( ); T j =25 C parameter: g fs S gfs 1 2 3 4 5 V 6.5 V GS 1 Page 5
9 Drainsource onstate resistance R DS(on) = f (T j ) parameter : =, V GS = V 17 mω Typ. gate threshold voltage V GS(th) = f (T j ) parameter: V GS = V DS 4 V R DS(on) 14 12 V GS(th) 3 2.5 83 µ 415 µ 8 98% 2 6 typ 1.5 4 1 2.5 1 C T j 11 Typ. capacitances C = f (V DS ) parameter: V GS =V, f=1 MHz 4 C 1 T j 12 Forward character. of reverse diode I F = f (V SD ) parameter: T j, tp = µs 3 pf C iss 2 C IF 3 C oss C rss 1 T j = 25 C typ T j = 175 C typ T j = 25 C (98%) T j = 175 C (98%) 2 5 15 V V DS Page 6.4.8 1.2 1.6 2 2.4 V 3 V SD
13 Typ. avalanche energy E S = f (T j ) par.: ID =, V DD = 25 V, R GS = 25 Ω 2 mj 2 14 Typ. gate charge V GS = f (Q Gate) parameter: ID = pulsed 16 V E S 1 1 VGS 12,2 V DS max,8 V DS max 1 1 8 6 4 2 25 45 65 85 5 125 145 C 185 T j nc 55 Q Gate 15 Drainsource breakdown voltage V (BR)DSS = f (T j ) parameter: ID= m 36 V V(BR)DSS 34 33 32 31 29 28 27 1 C T j Page 7
Published by Infineon Technologies G, Bereichs Kommunikation St.MartinStrasse 53, D81541 München Infineon Technologies G 1999 ll Rights Reserved. ttention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of noninfringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in lifesupport devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that lifesupport device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Further information Please notice that the part number is B, for simplicity the device is referred to by the term throughout this documentation. Page 8