MUBW 5-6 7 Converer - Brake - Inverer Module (CBI2) 2 22 D D3 D5 2 3 7 D7 6 5 T D T3 D3 T5 D5 8 2 6 7 5 9 4 D2 D4 D6 T7 T2 D2 T4 D4 T6 D6 23 4 24 2 3 NTC 8 9 Three Phase Brake Chopper Three Phase Recifier Inverer RRM = 6 S = 6 S = 6 I DM = 44 25 = 35 25 = 75 SM = 4 (sa) = 2. (sa) =.9 Inpu Recifier Bridge D - D6 Symbol Condiio Maximum Raings RRM 6 T C = 8 C; sine 8 3 I DM T C = 8 C; recangular; d = /3 29 SM = 25 C; = ms; sine 5 Hz 4 P o T C = 25 C 2 W Symbol Condiio Characerisic alues ( = 25 C, unless oherwise specified) min. yp. max. F = 5 ; = 25 C.5.8.6 I R R = RRM ; = 25 C.2 m 2 m pplicaion: C moor drives wih Inpu from single or hree phase grid Three phase synchronous or asynchronous moor elecric braking operaion Feaures High level of inegraion - only one power semiconducor module required for he whole drive Fas recifier diodes for enhanced EMC behaviour NPT IGBT echnology wih low sauraion volage, low swiching losses, high RBSO and shor circui ruggedness Epiaxial free wheeling diodes wih Hiperfas and sof reverse recovery Indusry sandard package wih iulaed copper base plae and soldering pi for PCB mouning Temperaure see included rr R = ; = 2 ; di/d = -2 /µs µs R hjc (per diode).6 K/W IXYS reserves he righ o change limis, es condiio and dimeio. 2 IXYS ll righs reserved - 8 5
MUBW 5-6 7 Oupu Inverer T - T6 Symbol Condiio Maximum Raings S = 25 C o 5 C 6 Equivalen Circuis for Simulaion Conducion S Coninuous ± 2 M Traien ± 3 25 T C = 25 C 75 8 T C = 8 C 5 RBSO = ±5 ; = 22 Ω; M = Clamped inducive load; L = µh K S SC = S ; = ±5 ; = 22 Ω; µs (SCSO) non-repeiive P o T C = 25 C 25 W Symbol Condiio Characerisic alues ( = 25 C, unless oherwise specified) min. yp. max. (sa) = 5 ; = 5 ; = 25 C.9 2.4 2.2 D - D6 Recifier Diode (yp. a T J ) =. ; R = 2 mω T - T6 / D - D6 IGBT (yp. a = 5 ; T J ) =.82 ; R = 28 mω Free Wheeling Diode (yp. a T J ) =.89 ; R = 8 mω T7 / D7 IGBT (yp. a = 5 ; T J ) =.9 ; R = 65 mω Free Wheeling Diode (yp. a T J ) =.7 ; R = 23 mω (h) = m; = 4.5 6.5 ES = S ; = ; = 25 C.8 m.7 m Thermal Respoe I GES = ; = ± 2 2 n d(on) 5 r 55 Inducive load, T J d(off) 3 CE = 3 ; = 5 f 3 E GE = ±5 ; = 22 Ω on 2.3 mj.7 mj C ies = 25 ; = ; f = MHz 28 pf Q Gon = 3; = 5 ; = 5 2 nc R hjc (per IGBT).5 K/W Oupu Inverer D - D6 Symbol Condiio Maximum Raings 25 T C = 25 C 72 8 T C = 8 C 45 Symbol Condiio Characerisic alues min. yp. max. F = 5 ; = ; = 25 C.8.3 I RM = 25 ; di F /d = -5 /µs; 25 rr R = 3 ; = 9 D - D6 Recifier Diode (yp.) C h =.3 J/K; R h =.85 K/W C h2 =.839 J/K; R h2 =.29 K/W T - T6 / D - D6 IGBT (yp.) C h =.22 J/K; R h =.382 K/W C h2 =.377 J/K; R h2 =.9 K/W Free Wheeling Diode (yp.) C h =.6 J/K; R h =.973 K/W C h2 =.88 J/K; R h2 =.27 K/W T7 / D7 IGBT (yp.) C h =.8 J/K; R h =.79 K/W C h2 =.92 J/K; R h2 =.29 K/W Free Wheeling Diode (yp.) C h =.43 J/K; R h = 2.738 K/W C h2 =.54 J/K; R h2 =.462 K/W R hjc (per diode).9 K/W 2 IXYS ll righs reserved 2-8
MUBW 5-6 7 Brake Chopper T7 Symbol Condiio Maximum Raings S = 25 C o 5 C 6 S Coninuous ± 2 M Traien ± 3 25 T C = 25 C 35 8 T C = 8 C 25 RBSO = ±5 ; = 47 Ω; M = 4 Clamped inducive load; L = µh K S SC = S ; = ±5 ; = 47 Ω; µs (SCSO) non-repeiive P o T C = 25 C 25 W Symbol Condiio Characerisic alues ( = 25 C, unless oherwise specified) min. yp. max. (sa) = 25 ; = 5 ; = 25 C 2. 2.6 2.4 (h) =.5 m; = 4.5 6.5 ES = S ; = ; = 25 C.5 m.3 m I GES = ; = ± 2 2 n d(on) 5 r 6 Inducive load, T J d(off) 3 CE = 3 ; = 25 f 3 E GE = ±5 ; = 47 Ω on.5 mj.85 mj C ies = 25 ; = ; f = MH z pf Q Gon = 3 ; = 5 ; = 25 65 nc R hjc Brake Chopper D7. K/W Symbol Condiio Maximum Raings RRM = 25 C o 5 C 6 25 T C = 25 C 22 8 T C = 8 C 5 Symbol Condiio Characerisic alues min. yp. max. F = 25 ; = 25 C 2.5.8 I R R = RRM ; = 25 C.6 m.7 m I RM = ; di F /d = -4 /µs; rr R = 3 8 R hjc 3.2 K/W 2 IXYS ll righs reserved 3-8
MUBW 5-6 7 Temperaure Seor NTC Symbol Condiio Characerisic alues min. yp. max. R 25 T = 25 C 4.75 5. 5.25 kω B 25/5 3375 K Module Symbol Condiio Maximum Raings Operaing -4...+25 C T JM 5 C T sg -4...+25 C ISOL I ISOL m; 5/6 Hz 25 ~ M d Mouning orque (M5) 2.7-3.3 Nm Symbol Condiio Characerisic alues min. yp. max. R pin-chip 5 mω d S Creepage disance on surface 6 mm d Srike disance in air 6 mm R hch wih heasink compound.2 K/W Weigh 8 g Dimeio in mm ( mm =.394") 2 IXYS ll righs reserved 4-8
MUBW 5-6 7 Inpu Recifier Bridge D - D6 2 8 6 = 25 C SM 2 6 2 5Hz, 8% RRM = 45 C I 2 3 2 s = 45 C 4 8 2 4 P o 4 2..5..5 2. 2.5 F Fig. Forward curren versus volage drop per diode 8 W 6... s Fig. 2 Surge overload curren R h :.5 K/W.5 K/W.3 K/W.5 K/W K/W 2 K/W 5 K/W 2 2 3 4 5 6 7 ms 8 9 Fig. 3 I 2 versus ime per diode I d() 8 6 4 2 4 8 2 I d()m 2 4 6 8 2 4 C 2 4 6 8 2 4 C T amb T C Fig. 4 Power dissipaion versus direc oupu curren and ambien emperaure, sin 8.2 K/W. Fig. 5 Max. forward curren versus case emperaure Z hjc.8.6.4.2.... s Fig. 6 Traien hermal impedance juncion o case 2 IXYS ll righs reserved 5-8 DWFN2-6
MUBW 5-6 7 Oupu Inverer T - T6 / D - D6 5 5 2 9 6 = 7 5 3 2 9 6 = 7 5 3 3 9 3 9 = 25 C 2 3 4 5 6 2 3 4 5 6 Fig. 7 Typ. oupu characerisics Fig. 8 Typ. oupu characerisics 5 9 2 9 6 3 = 25 C 75 6 45 3 5 = 25 C = 2 4 6 8 2 4 6..5..5 2. F Fig. 9 Typ. rafer characerisics Fig. Typ. forward characerisics of free wheeling diode 2 5 5 4 2 5 rr rr I RM GE 5 = 3 = 5 4 8 2 nc 6 Q G 3 2 I RM MUBW567 2 4 6 8 /µs -di/d R = 3 = 3 9 6 3 Fig. Typ. urn on gae charge Fig. 2 Typ. urn off characerisics of free wheeling diode 2 IXYS ll righs reserved 6-8
MUBW 5-6 7 Oupu Inverer T - T6 / D - D6. d(on) 4 4 mj mj 7.5 75 E 3 3 E on off 5. 2.5 r = 3 = ±5 = 22Ω 5 25 2 d(off) = 3 = ±5 = 22Ω 2 E on. 4 8 2 Fig. 3 Typ. urn on energy and swiching imes versus collecor curren 4 8 2 Fig. 4 Typ. urn off energy and swiching imes versus collecor curren f E on 4 mj 3 E on d(on) r 8 6 3 mj 2 6 4 2 = 3 = ±5 = 5 4 2 d(off) = 3 = ±5 = 5 2 2 3 4 5 Ω 6 Fig. 5 Typ. urn on energy and swiching imes versus gae resisor 2 3 4 5 Ω 6 Fig.6 Typ. urn off energy and swiching imes versus gae resisor f M 2 9 6 K/W Z hjc.. diode IGBT 3 = 22 Ω 2 3 4 5 6 7 Fig. 7 Reverse biased safe operaing area RBSO single pulse. MUBW567...... s Fig. 8 Typ. raien hermal impedance 2 IXYS ll righs reserved 7-8
MUBW 5-6 7 Brake Chopper T7 / D7 6 2 5 4 TJ = 25 C TJ 5 = 25 C 3 2 = 5 2 3 4 5 6 Fig. 9 Typ. oupu characerisics 5 2 3 F Fig. 2 Typ. forward characerisics of free wheeling diode 2. mj.5 d(off) 4 3. mj.8 5 4..5 = 3 = ±5 = 47Ω 2.6.4.2 d(off) = 3 = ±5 = 25 3 2 f. 2 3 4 5 Fig. 2 Typ. urn off energy and swiching imes versus collecor curren f. 2 4 6 8 Ω 2 Fig. 22 Typ. urn off energy and swiching imes versus gae resisor K/W Z hjc diode IGBT Temperaure Seor NTC.. R Ω. single pulse...... s Fig. 23 Typ. raien hermal impedance MUBW567 25 5 75 25 C 5 T Fig. 24 Typ. hermisorresisance versus emperaure 2 IXYS ll righs reserved 8-8