MIXW12TED SixPack XPT IGBT CES 2 = 12 = 12 CE(sat) = 1. Part name (Marking on product) MIXW12TED 2, 2 1, 1 1 9 17 NTC 2 1 23, 24 21, 22 19, 2 E 7273 1 3 7 11 Pin configuration see outlines. 4 27, 2 12 13, 14 Features: Easy paralleling due to the positive temperature coefficient of the onstate voltage Rugged XPT design (Xtreme light Punch Through) results in: short circuit rated for 1 µsec. very low gate charge square RBSO @ 3x low EMI Thin wafer technology combined with the XPT design results in a competitive low CE(sat) SONIC diode fast and soft reverse recovery low operating forward voltage pplication: C motor drives Solar inverter Medical equipment Uninterruptible power supply irconditioning systems Welding equipment Switchedmode and resonantmode power supplies Package: "E2Pack" standard outline Iulated copper base plate Soldering pi for PCB mounting Temperature see included 2991b 29 IXYS ll rights reserved 1
MIXW12TED Ouput Inverter T1 T Symbol Definitio Conditio min. typ. max. Unit CES collector emitter voltage = 2 C 12 GES GEM max. DC gate voltage max. traient collector gate voltage continuous traient 2 collector current T C = 2 C T C = C ±2 ±3 12 4 P tot total power dissipation T C = 2 C 39 W CE(sat) collector emitter saturation voltage = 77 ; GE = 1 = 2 C 1. 2.1 2.1 GE(th) gate emitter threshold voltage = 3 m; GE = CE = 2 C... ES collector emitter leakage current CE = CES ; GE = = 2 C.3..2 m m I GES gate emitter leakage current GE = ±2 n Q G(on) total gate charge CE = ; GE = 1 ; = 7 23 nc t d(on) t r t d(off) t f E on E off turnon delay time current rise time turnoff delay time current fall time turnon energy per pulse turnoff energy per pulse inductive load CE = ; = 7 GE = ±1 ; R G = 1 W RBSO reverse bias safe operating area GE = ±1 ; R G = 1 W; CEK = 12 22 SCSO t SC I SC short circuit safe operating area short circuit duration short circuit current 7 4 2 1..3 CE = 9 ; GE = ±1 ; R G = 1 W; nonrepetitive 3 mj mj 1 µs R thjc thermal resistance junction to case (per IGBT).32 K/W Output Inverter D1 D Symbol Definitio Conditio min. typ. max. Unit RRM max. repetitve reverse voltage = 2 C 12 I F2 I F forward current T C = 2 C T C = C F forward voltage I F = 1 ; GE = = 2 C Q rr I RM t rr E rec reverse recovery charge max. reverse recovery current reverse recovery time reverse recovery energy R = di F /dt = 12 /µs I F = 1 ; GE = 1.9 1. 13 9 2.2 µc mj R thjc thermal resistance junction to case (per diode).4 K/W T C = 2 C unless otherwise stated 2991b 29 IXYS ll rights reserved 2
MIXW12TED Temperature Seor NTC Symbol Definitio Conditio min. typ. max. Unit R 2 resistance T C = 2 C 4.7. B 2/ 337.2 kw K Module Symbol Definitio Conditio min. typ. max. Unit M T stg operating temperature max. virtual junction temperature storage temperature 4 4 12 1 12 C C C ISOL isolation voltage I ISOL < 1 m; / Hz 3 ~ CTI comparative tracking index M d mounting torque (M) 3 Nm d S d creep distance on surface strike distance through air mm mm R pinchip resistance pin to chip 2. mw R thch thermal resistance case to heatsink with heatsink compound.2 K/W Weight 1 g Equivalent Circuits for Simulation I Symbol Definitio Conditio min. typ. max. Unit R IGBT T1 T = 1 C 1.1 R 17.9 free wheeling diode D1 D = 1 C 1.9 R 9.1 T C = 2 C unless otherwise stated mw mw 2991b 29 IXYS ll rights reserved 3
MIXW12TED Circuit Diagram 2, 2 1, 1 1 9 17 NTC 2 1 23, 24 21, 22 19, 2 1 3 7 11 4 27, 2 12 13, 14 Outline Drawing Dimeio in mm (1 mm =.394 ) 2. ±.1 17 ±. baseplate typ. 1 µm convex over 7 mm before mounting 3.. Y Z Ø 2.1; l= 7. Detail X ±.2 ±.1 ±. Ø Detail Z Ø 2. Ø 2.1 +.3. Detail Y ±1 1 2.3 7.7 1.2 ±.. 1. 72.7 19.3 23.4 3. 42.9 7.93 1.74 73.17 7.9.1 B X 2.9 ±.2 ±.2 4 3.4 32 11 Ø. 2 2 27 2 24 23 22 21 2 19 1 17 1 2 3 4 7 9 1 1112 1 1 14 13 11.43 7.2 7.2 11.43 2.9 1.2 19.3 27.4 31.2 3. 42.9.31 4.12 1.74. 73.17 7.9 j n.4 B 93 17. ±.2 ±.3 Product Marking Part number M = Module I = IGBT X = XPT = standard = Current Rating [] W = SixPack 12 = Reverse oltage [] T = NTC ED = E2Pack Ordering Part Name Marking on Product Delivering Mode Base Qty Ordering Code Standard MIXW12 TED MIXW12TED Box 42 2991b 29 IXYS ll rights reserved 4
MIXW12TED 14 12 GE = 1 14 12 GE = 1 17 19 13 11 1 = 2 C 1 [] 4 [] 4 9 2 2 1 2 3 [] CE Fig. 1 Typ. output characteristics 1 2 3 4 CE [] Fig. 2 Typ. output characteristics 14 12 1 2 1 = 7 CE = [] GE [] 1 4 2 = 2 C 7 9 1 11 12 13 GE [] Fig. 3 Typ. tranfer characteristics 1 1 2 2 3 Q G [nc] Fig. 4 Typ. turnon gate charge 1 14 12 R G = 1 CE = GE = ±1 1 9 1 E [mj] 4 2 E off E on E [mj] 7 E off E on = 7 CE = GE = ±1 2 4 1 12 14 1 [] Fig. Typ. switching energy vs. collector current 1 12 14 1 1 2 22 24 R G [ ] Fig. Typ. switching energy vs. gate resistance 2991b 29 IXYS ll rights reserved
MIXW12TED [] 2 1 1 14 12 1 4 2 1 2 3 [] F = 2 C Fig. 7 Typ. forward characteristic Z thjc 1.1 [K/W].1.1.1.1 1 1 [s] t p Diode IGBT Fig. Typ. traient thermal impedance IGBT FRD R i t i R i t i 1.72.2.92.2 2.37.3.7.3 3.1.3.1.3 4.... NTC 1 1 R [ W ] 1 1 2 7 1 12 1 Tc [ C] Typ. NTC resistance versus temperature 2991b 29 IXYS ll rights reserved