LogicLeve Gate rive dvanced Process Technoogy Isoated Package High Votage Isoation = 2.5KVRMS Sink to Lead Creepage ist. = 4.8mm Fuy vaanche Rated escription Fifth Generation HEXFETs from Internationa Rectifier utiize advanced processing techniques to achieve extremey ow onresistance per siicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are we known for, provides the designer with an extremey efficient and reiabe device for use in a wide variety of appications. PRELIMINRY G P 9.495 IRL540N HEXFET Power MOSFET S V SS = 00V R S(on) = 0.044Ω I = 30 The TO220 package is universay preferred for a commerciaindustria appications at power dissipation eves to approximatey 50 watts. The ow therma resistance and ow package cost of the TO220 TO220B contribute to its wide acceptance throughout the industry. bsoute Maximum Ratings Parameter Max. Units I @ T C = 25 C Continuous rain Current, V GS @ 0V 30 I @ T C = 00 C Continuous rain Current, V GS @ 0V 2 I M Pused rain Current 20 P @T C = 25 C Power issipation 94 W Linear erating Factor 0.63 W/ C V GS GatetoSource Votage ± 6 V E S Singe Puse vaanche Energy 30 mj I R vaanche Current 8 E R Repetitive vaanche Energy 9.4 mj dv/dt Peak iode Recovery dv/dt ƒ 4.3 V/ns T J Operating Junction and 55 to 75 T STG Storage Temperature Range C Sodering Temperature, for 0 seconds 300 (.6mm from case ) Mounting torque, 632 or M3 srew 0 bf in (.N m) Therma Resistance Parameter Typ. Max. Units R θjc JunctiontoCase.6 R θcs CasetoSink, Fat, Greased Surface 0.50 C/W R θj Junctiontombient 62 8/4/96
Eectrica Characteristics @ T J = 25 C (uness otherwise specified) Parameter Min. Typ. Max. Units Conditions V (BR)SS raintosource Breakdown Votage 00 V V GS = 0V, I = 250µ V (BR)SS / T J Breakdown Votage Temp. Coefficient 0. V/ C Reference to 25 C, I = m 0.044 V GS = 0V, I = 8 R S(on) Static raintosource OnResistance 0.053 Ω V GS = 5.0V, I = 8 0.063 V GS = 4.0V, I = 5 V GS(th) Gate Threshod Votage.0 2.0 V V S = V GS, I = 250µ g fs Forward Transconductance 4 S V S = 25V, I = 8 I SS raintosource Leakage Current 25 V S = 00V, V GS = 0V µ 250 V S = 80V, V GS = 0V, T J = 50 C I GSS GatetoSource Forward Leakage 00 V GS = 6V n GatetoSource Reverse Leakage 00 V GS = 6V Q g Tota Gate Charge 74 I = 8 Q gs GatetoSource Charge 9.4 nc V S = 5.0V Q gd Gatetorain ("Mier") Charge 38 V GS = 5.0V, See Fig. 6 and 3 t d(on) TurnOn eay Time V = 50V t r Rise Time 8 I = 8 ns t d(off) TurnOff eay Time 39 R G = 5.0Ω, V GS = 5.0V t f Fa Time 62 R = 2.7Ω, See Fig. 0 L Interna rain Inductance 4.5 nh Between ead, 6mm (0.25in.) L S Interna Source Inductance 7.5 G from package and center of die contact C iss Input Capacitance 800 V GS = 0V C oss Output Capacitance 350 pf V S = 25V C rss Reverse Transfer Capacitance 70 ƒ =.0MHz, See Fig. 5 S Sourcerain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions I S Continuous Source Current MOSFET symbo 30 (Body iode) showing the I SM Pused Source Current integra reverse G 20 (Body iode) pn junction diode. S V S iode Forward Votage.3 V T J = 25 C, I S = 8, V GS = 0V t rr Reverse Recovery Time 90 290 ns T J = 25 C, I F = 8 Q rr Reverse RecoveryCharge..7 µc di/dt = 00/µs t on Forward TurnOn Time Intrinsic turnon time is negigibe (turnon is dominated by L S L ) Notes: Repetitive rating; puse width imited by max. junction temperature. ( See fig. ) Starting T J = 25 C, L =.9mH R G = 25Ω, I S = 8. (See Figure 2). ƒ I S 8, di/dt 80/µs, V V (BR)SS, T J 75 C Puse width 300µs; duty cyce 2%
I, raintosource Current () 000 00 0 VGS TOP 5V 2V 0V 8.0V 6.0V 4.0V 3.0V BOTTOM 2.5V 2.5V I, raintosource Current () 000 00 0 VGS TOP 5V 2V 0V 8.0V 6.0V 4.0V 3.0V BOTTOM 2.5V 2.5V 20µs PULSE WITH T J = 25 C 0. 0 00 V S, raintosource Votage (V) 20µs PULSE WITH T J = 75 C 0. 0 00 V S, raintosource Votage (V) Fig. Typica Output Characteristics, T J = 25 o C Fig 2. Typica Output Characteristics, T J = 75 o C 000 3.0 I = 30 I, raintosource Current () 00 0 T = 25 C J T = 75 C J V S = 50V 20µs PULSE WITH 2 4 6 8 0 V GS, GatetoSource Votage (V) R S(on), raintosource On Resistance (Normaized) 2.5 2.0.5.0 0.5 V GS = 0V 0.0 60 40 20 0 20 40 60 80 00 20 40 60 80 T J, Junction Temperature ( C) Fig 3. Typica Transfer Characteristics Fig 4. Normaized OnResistance Vs. Temperature
C, Capacitance (pf) 3000 2000 000 V GS= 0V, f = MHz C iss = C gs C, C gd SHORTE ds C rss = C gd C oss = C ds C gd C iss C oss C rss V, GatetoSource Votage (V) GS 5 2 9 6 3 I = 8 V S = 80V V S = 50V V S = 20V 0 0 00 V S, raintosource Votage (V) FOR TEST CIRCUIT SEE FIGURE 3 0 0 20 40 60 80 00 Q, Tota Gate Charge (nc) G Fig 5. Typica Capacitance Vs. raintosource Votage Fig 6. Typica Gate Charge Vs. GatetoSource Votage 000 000 OPERTION IN THIS RE LIMITE BY R S(on) I S, Reverse rain Current () 00 0 T = 75 C J T = 25 C J I, rain Current () 00 0 0µs 00µs ms V GS = 0V 0.4 0.6 0.8.0.2.4.6.8 V S, Sourcetorain Votage (V) T C = 25 C T 0ms J = 75 C Singe Puse 0 00 000 V S, raintosource Votage (V) Fig 7. Typica Sourcerain iode Forward Votage Fig 8. Maximum Safe Operating rea
30 V S R I, rain Current (mps) 25 20 5 0 5 0 25 50 75 00 25 50 75 T C, Case Temperature ( C) Fig 9. Maximum rain Current Vs. Case Temperature Fig 0a. Switching Time Test Circuit V S 90% R G V GS 5.0V Puse Width µs uty Factor 0. %.U.T. 0% V GS t d(on) t r t d(off) t f Fig 0b. Switching Time Waveforms V 0 Therma Response (Z thjc ) 0. = 0.50 0.20 0.0 0.05 0.02 0.0 Notes: SINGLE PULSE. uty factor = t / t (THERML RESPONSE) 2 2. Peak T J = P M x Z thjc T C 0.0 0.0000 0.000 0.00 0.0 0. t, Rectanguar Puse uration (sec) P M t t 2 Fig. Maximum Effective Transient Therma Impedance, JunctiontoCase
R G V S 0V tp L.U.T IS 0.0Ω Fig 2a. Uncamped Inductive Test Circuit tp 5V RIVER V (BR)SS V E S, Singe Puse vaanche Energy (mj) 800 600 400 200 I TOP 7.3 3 BOTTOM 8 0 25 50 75 00 25 50 75 Starting T J, Junction Temperature ( C) Fig 2c. Maximum vaanche Energy Vs. rain Current I S Fig 2b. Uncamped Inductive Waveforms Current Reguator Same Type as.u.t. 50KΩ Q G 2V.2µF.3µF 5.0 V Q GS Q G.U.T. V S V GS V G 3m Charge I G I Current Samping Resistors Fig 3a. Basic Gate Charge Waveform Fig 3b. Gate Charge Test Circuit
Peak iode Recovery dv/dt Test Circuit.U.T ƒ Circuit Layout Considerations Low Stray Inductance Ground Pane Low Leakage Inductance Current Transformer R G dv/dt controed by R G river same type as.u.t. I S controed by uty Factor "".U.T. evice Under Test V river Gate rive Period P.W. = P.W. Period V GS =0V *.U.T. I S Waveform Reverse Recovery Current Body iode Forward Current di/dt.u.t. V S Waveform iode Recovery dv/dt V Reppied Votage Inductor Curent Body iode Forward rop Rippe 5% I S * V GS = 5V for Logic Leve evices Fig 4. For NChanne HEXFETS
Package Outine TO220B Outine imensions are shown in miimeters (inches) 2.87 (.3) 2.62 (.03) 0.5 4 (.4 5) 0.2 9 (.40 5) 3.78 (.4 9) 3.54 (.3 9) 4.69 (.85) 4.20 (.65) B.32 (.052).22 (.048) 5.24 (.600) 4.84 (.584) 4 6.4 7 (.25 5) 6. 0 (.24 0) 2 3.5 (.0 4 5) M IN LE SSIGNMENTS G TE 2 R IN 3 SOURCE 4 R IN 4.09 (.555) 3.47 (.530) 4.0 6 (.6 0) 3.5 5 (.4 0).40 (.055) 3X.5 (.045) 2.54 (.00) 2X 3X 0.93 (.037) 0.69 (.027) 0.3 6 (.0 4) M B M 3X 0.5 5 (.02 2) 0.4 6 (.0 8) 2.92 (.5) 2.64 (.04) NOTES: IM E N S IO N IN G & TO L ER N C IN G P ER N S I Y 4.5 M, 98 2. 3 O U TL IN E C O N FO R M S TO JE E C OU T LIN E TO 2 20 B. 2 CONTR OLLING IMENSION : INCH 4 HETSIN K & LE M ESUREMENTS O NOT INCLUE BU RRS. Part Marking Information TO220B EXMPLE : THIS : THIS IS N N IRF00 WITH WITH SSEMBLY LOT LOT COE COE 9BM 9BM INTERNTIONL RECTIFIER LOGO LOGO SSEMBLY LOT LOT COE COE IRF00 9246 9246 9B 9B M M PRT PRT NUMBER TE TE COE COE (YYWW) YY YY = YER = YER WW WW = WEEK = WEEK WORL HEQURTERS: 233 Kansas St., E Segundo, Caifornia 90245, Te: (30) 322 333 EUROPEN HEQURTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Te: 44 883 732020 IR CN: 732 Victoria Park ve., Suite 20, Markham, Ontario L3R 2Z8, Te: (905) 475 897 IR GERMNY: Saaburgstrasse 57, 6350 Bad Homburg Te: 49 672 96590 IR ITLY: Via Liguria 49, 007 Borgaro, Torino Te: 39 45 0 IR FR EST: K&H Bdg., 2F, 3304 NishiIkeburo 3Chome, ToshimaKi, Tokyo Japan 7 Te: 8 3 3983 0086 IR SOUTHEST SI: 35 Outram Road, #002 Tan Boon Liat Buiding, Singapore 036 Te: 65 22 837 http://www.irf.com/ ata and specifications subject to change without notice. 8/96