BSP36P SIPMOS Small-Signal-Transistor Feature P-Channel Enhancement mode Logic Level dv/dt rated Qualified according to EC Q Halogen free according to IE C649 Gate pin Product Summary V DS - V R DS(on).8 Ω I D -.68 Drain pin /4 Source pin 3 PG-SOT3-4- Type Package Tape and Reel Information BSP36P PG-SOT3-4- H637: pcs/reel Marking BSP36P Packaging Non dry Maximum Ratings, at T j = 5 C, unless otherwise specified Parameter Symbol Value Unit Continuous drain current T =5 C T =7 C Pulsed drain current T =5 C Reverse diode dv/dt I S =-.68, V DS =-48V, di/dt=-/µs, T jmax =5 C I D -.68 -.54 I D puls -.7 dv/dt 6 kv/µs Gate source voltage V GS ± V Power dissipation T =5 C P tot.8 W Operating and storage temperature T j, T stg -55... +5 C IEC climatic category; DIN IEC 68-55/5/56 ESD Class JESD-4-HBM Class a Rev.. Page 6-5-3
BSP36P Thermal Characteristics Parameter Symbol Values Unit min. typ. max. Characteristics Thermal resistance, junction - soldering point (Pin 4) R thjs - 5 5 K/W SMD version, device on PCB: @ min. footprint @ 6 cm cooling area ) R thj - 8 5-48 7 Electrical Characteristics, at T j = 5 C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Static Characteristics Drain-source breakdown voltage V (BR)DSS - - - V V GS =, I D =-5µ Gate threshold voltage, V GS = V DS V GS(th) - -.5 - I D =-7µ Zero gate voltage drain current V DS =-V, V GS =, T j =5 C V DS =-V, V GS =, T j =5 C I DSS µ - - -. - -. - Gate-source leakage current I GSS - - - n V GS =-V, V DS = Drain-source on-state resistance R DS(on) -.5.3 Ω V GS =-4.5V, I D =-.6 Drain-source on-state resistance R DS(on) -.4.8 V GS =-V, I D =-.68 Device on 4mm*4mm*.5mm epoxy PCB FR4 with 6cm² (one layer, 7 µm thick) copper area for drain connection. PCB is vertical without blown air. Rev.. Page 6-5-3
BSP36P Electrical Characteristics, at T j = 5 C, unless otherwise specified Parameter Symbol Conditions Values Unit min. typ. max. Dynamic Characteristics Transconductance g fs V DS * I D *R DS(on)max,.5 - S I D =-.54 Input capacitance C iss V GS =, V DS =-5V, - 7 46 pf Output capacitance C oss f=mhz - 7.7 34.5 Reverse transfer capacitance C rss - 5 Turn-on delay time t d(on) V DD =-5V, V GS =-V, - 4.7 7 ns Rise time t r I D =-.68, R G =6Ω - 7.5. Turn-off delay time t d(off) - 67.4 Fall time t f - 5.9 38.9 Gate Charge Characteristics Gate to source charge Q gs V DD =-8V, I D =-.68 - -. -.3 nc Gate to drain charge Q gd - -.87 -.8 Gate charge total Q g V DD =-8V, I D =-.68, - -5. -6.4 V GS = to -V Gate plateau voltage V (plateau) V DD =-8V, I D =-.68 - -.7 - V Reverse Diode Inverse diode continuous forward current I S T =5 C - - -.68 Inv. diode direct current, pulsed I SM - - -.7 Inverse diode forward voltage V SD V GS =, I F =-.68 - -.85 -. V Reverse recovery time t rr V R =-5V, I F =l S, - 44. 55.3 ns Reverse recovery charge Q di F /dt=/µs rr - 56.3 7.4 nc Rev.. Page 3 6-5-3
BSP36P Power dissipation P tot = f (T ).9 W Drain current I D = f (T ) parameter: V GS V -.75 Ptot.6.4..8.6.4. 4 6 8 C 6 T ID -.6 -.55 -.5 -.45 -.4 -.35 -.3 -.5 -. -.5 -. -.5 4 6 8 C 6 T 3 Safe operating area I D = f ( V DS ) parameter : D =, T = 5 C - t p = 5.µs 4 Transient thermal impedance Z thj = f (t p ) parameter : D = t p /T K/W ID - R DS(on) = V DS / I D ms ms ZthJ D =.5. - -. - single pulse.5.. DC - - - - - - - V - 3 V DS Rev.. Page 4 - -5-4 -3 - - s 4 t p 6-5-3
BSP36P 5 Typ. output characteristic I D = f (V DS ) parameter: Tj =5 C, -V GS 6 Typ. drain-source on resistance R DS(on) = f (I D ) parameter: Tj =5 C, -V GS -ID.4.8.6.4 V 5V 4.4V 3.6V 3.V.8V.4V.V RDS(on) 7 Ω 5 4.V.4V.8V 3.V 3.6V 4.4V 5V V. 3.8.6.4..5.5.5 3 3.5 4 V 5 -V DS 7 Typ. transfer characteristics I D = f ( V GS ); V DS x I D x R DS(on)max parameter: T j = 5 C 3.5.4.8..6.4 -I D 8 Typ. forward transconductance g fs = f(i D ) parameter: T j =5 C.8 S -ID.5 gfs..9.5.6.5.3.5.5.5 3 3.5 V 4.5 -V GS.4.8..6.4 3. -I D Rev.. Page 5 6-5-3
BSP36P 9 Drain-source on-state resistance R DS(on) = f (T j ) parameter : I D = -.68, V GS = - V Typ. gate threshold voltage V GS(th) = f (T j ) parameter: V GS = V DS Ω 5.4 V 98% 4 RDS(on) 3.5 3 VGS(th).8.6.4 typ..5 98%. %.5.5 typ.8.6.4. -6-6 C 8 T j Typ. capacitances C = f (V DS ) parameter: V GS =, f= MHz, T j = 5 C 3-6 - 6 C 6 T j Forward character. of reverse diode I F = f (V SD ) parameter: T j - pf C iss - C C oss IF C rss - - T j = 5 C typ T j = 5 C typ T j = 5 C (98%) T j = 5 C (98%) 4 8 6 4 8 V 36 -V DS Rev.. Page 6 - - -.4 -.8 -. -.6 - -.4 V -3 V SD 6-5-3
BSP36P 3 Typ. gate charge V GS = f (Q Gate) parameter: I D = -.68 pulsed, T j = 5 C -6 V 4 Drain-source breakdown voltage V (BR)DSS = f (T j ) - V VGS - - V(BR)DSS -4 - - -8-8 -6-4 -6 - - -4 -. V DS max.5 V DS max.8 V DS max -98-96 -94-9 3 4 5 6 7 nc 8.5 Q G -9-6 - 6 C 8 T j Rev.. Page 7 6-5-3
BSP36P Package Outline SOT-3 Footprint Soldering type: Reflow soldering Soldering type: Wave soldering Tape and Reel Dimensions in mm Rev.. Page 8 6-5-3
-VSIPMOSSmallSignalTransistor BSP36P RevisionHistory BSP36P Revision:6-6-,Rev.. Previous Revision Revision Date Subjects (major changes since last revision). 6-6- Release of final version TrademarksofInfineonTechnologiesG URIX,C66,CanPK,CIPOS,CoolGaN,CoolMOS,CoolSET,CoolSiC,CORECONTROL,CROSSVE,DVE,DI-POL,DrBlade, EasyPIM,EconoBRIDGE,EconoDUL,EconoPCK,EconoPIM,EiceDRIVER,eupec,FCOS,HITFET,HybridPCK,Infineon, ISOFCE,IsoPCK,i-Wafer,MIPQ,ModSTCK,my-d,NovalithIC,OmniTune,OPTIG,OptiMOS,ORIG,POWERCODE, PRIMRION,PrimePCK,PrimeSTCK,PROFET,PRO-SIL,RSIC,REL3,ReverSave,SatRIC,SIEGET,SIPMOS,SmartLEWIS, SOLIDFLSH,SPOC,TEMPFET,thinQ,TRENCHSTOP,TriCore. Trademarksupdatedugust5 OtherTrademarks llreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners. WeListentoYourComments nyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.pleasesendyourproposal(includingareferencetothisdocument)to: erratum@infineon.com Publishedby InfineonTechnologiesG 876München,Germany 6InfineonTechnologiesG llrightsreserved. LegalDisclaimer Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics.With respecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingtheapplication ofthedevice,infineontechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithout limitation,warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. Information Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon TechnologiesOffice(www.infineon.com). Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion, pleasecontactthenearestinfineontechnologiesoffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofinfineontechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered. 9 Rev..,6-6-
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