KSD62 NPN Epitaxial Silicon Transistor High Current Driver Applications Low Collector-Emitter Saturation Voltage Large Current Capacity and Wide SOA Fast Switching Speed Complement to KSB2 Marking 6 2 July 2005 P Y W W SOT-89. Base 2. Collector 3. Emitter Weekly code Year code h FE grage Absolute Maximum Ratings T a = 25 C unless otherwise noted Symbol Parameter Ratings Units V CBO Collector-Base Voltage 30 V V CEO Collector-Emitter Voltage 25 V V EBO Emitter-Base Voltage 6 V I C Collector Current 2 A P C P C * Mounted on Ceramic Board (250mm 2 x 0.8mm) Collector Power Dissipation 500.3 T J Junction Temperature 50 C T STG Storage Temperature -55 ~ 50 C mw W Electrical Characteristics T a = 25 C unless otherwise noted Symbol Parameter Test Condition Min. Typ. Max. Units BV CBO Collector-Base Breakdown Voltage I C = 0µA, I E = 0 30 V BV CEO Collector-Emitter Breakdown Voltage I C = ma, I B = 0 25 V BV EBO Emitter-Base Breakdown Voltage I E = 0µA, I C = 0 6 V I CBO Collector Cut-off Current V CB = 20V, I E = 0 00 na I EBO Emitter Cut-off Current V BE = 4V, I C = 0 00 na h FE DC Current Gain V CE = 2V, I C = 0.A h FE2 V CE = 2V, I C =.5A V CE (sat) Collector-Emitter Saturation Voltage I C =.5A, I B = 75mA 0.8 0.4 V V BE (sat) Base-Emitter Saturation Voltage I C =.5A, I B = 75mA 0.85.2 V 00 65 560 2005 Fairchild Semiconductor Corporation www.fairchildsemi.com
Electrical Characteristics (Continued) T a = 25 C unless otherwise noted Symbol Parameter Test Condition Min. Typ. Max. Units f T Current Gain Bandwidth product V CE = 0V, I C = 50mA 50 MHz C ob Output Capacitance V CB = 0V, I E = 0, f = MHz 9 pf t ON Turn On Time * V CC = 2V, V BE = 5V 60 ns t STG Storage Time * I B = -I B2 = 25mA I C = 0.5A, R L = 25Ω 500 ns t F Fall Time * 25 ns h FE Classification Classification R S T U h FE 00 ~ 200 40 ~ 280 200 ~ 400 280 ~ 560 Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity 62 KSD62 SOT-89 3 -- 4,000 2 www.fairchildsemi.com
Typical Performance Characteristics Figure. Static Characteristic IC[A], COLLECTOR CURRENT 2.0 IB = 50mA IB = 30mA IB = 20mA.6 IB = 0mA.2 IB = 8mA IB = 6mA 0.8 IB = 4mA 0.4 IB = 2mA IB = 0 0.0 0.0 0.2 0.4 0.6 0.8.0 V CE[V], COLLECTOR-EMITTER VOLTAGE Figure 2. DC Current Gain hfe, DC CURRENT GAIN 000 00 0 VCE= 2V 0.0 0. 0 I C[A], COLLECTOR CURRENT Figure 3. DCollector-Emitter Saturation Voltage Figure 4. Base-Emitter On Voltage VCE(sat)[V], SATURATION VOLTAGE 0 0. IC = 0 IB IC[A], COLLECTOR CURRENT 3.2 2.8 2.4 2.0.6.2 0.8 0.4 VCE = 2V 0.0 0.0 0. 0 0.0 0.0 0.2 0.4 0.6 0.8.0.2 I C[A], COLLECTOR CURRENT V BE[V], BASE-EMITTER VOLTAGE Figure 5. Collector Output Capacitance Figure 6. Current Gain Bandwidth Product Cob[pF], CAPACITANCE 000 00 0 IE=0 f = MHz 0. 0 00 ft[mhz], CURRENT GAIN-BANDWIDTH PRODUCT 000 00 0 0. VCE = 0V V CB [V], COLLECTOR-BASE VOLTAGE IC[A], COLLECTOR CURRENT 3 www.fairchildsemi.com
Typical Performance Characteristics (Continued) Figure 7. Safe Operating Area I C [A], COLLECTOR CURRENT 0 0. I C MAX. (Pulse) I C MAX. (DC) T a =25 o C Single Pulse Mounted on Ceramic Board (250mm 2 0.8mm) 00ms 0ms 0.0 0. 0 00 V CE [V], COLLECTOR-EMITTER VOLTAGE ms Figure 8. Power Derating PC[W], POWER DISSIPATION.6.2 0.8 0.4 Mounted on Ceramic Board (250mm 2 0.8mm) No Heat Sink 0.0 0 50 00 50 200 T a[ o C], AMBIENT TEMPERATURE 4 www.fairchildsemi.com
Mechanical Dimensions 4.50 ±0.20.50 ±0.20.65 ±0.0 C0.2 SOT-89 2.50 ±0.20 (0.50) 4.0 ±0.20 (0.40) (.0) 0.50 ±0.0.50 TYP.50 TYP 0.40 ±0.0 0.40 +0.0 0.05 Dimensions in Millimeters 5 www.fairchildsemi.com
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