reliminary data SIMOS SmallSignalTransistor Features Dual and Channel Enhancement mode valanche rated dv/dt rated roduct Summary Drain source voltage DS 6 6 DrainSource onstate R DS(on).. Ω resistance Continuous drain current I D Type ackage Ordering Code SO 8 Q674S45 Maximum Ratings,at = 5 C, unless otherwise specified arameter Symbol alue Unit Continuous drain current I D T = 5 C T = 7 C.4.6 ulsed drain current T = 5 C I D puls 8 valanche energy, single pulse E S mj I D =, DD = 5, R GS = 5 Ω I D =, DD = 5, R GS = 5 Ω 47 7 valanche energy, periodic limited by max E R.. Reverse diode dv/dt, max = 5 C dv/dt k/µs I S =, DS = 48, di/dt = /µs I S =, DS = 48, di/dt = /µs 6 6 Gate source voltage GS ± ± ower dissipation T = 5 C tot W Operating and storage temperature, T stg 55...+5 C IEC climatic category; DI IEC 68 55/5/56 age 9999
reliminary data Termal Characteristics arameter Symbol alues Unit min. typ. max. Dynamic Characteristics Thermal resistance, junction soldering point R thjs 4 K/W ( in 4) 4 SMD version, device on CB: R thj @ min. footprint; t sec. @ 6 cm cooling area ) ; t sec. 6.5 @ min. footprint; t sec. 7 @ 6 cm cooling area ) ; t sec. 6.5 Static Characteristics, at = 5 C, unless otherwise specified Drain source breakdown voltage (BR)DSS GS =, I D = 5 µ 6 GS =, I D = 5 µ 6 Gate threshold voltage, GS = DS GS(th) I D = µ. 4 I D = 45 µ. 4 Zero gate voltage drain current I DSS µ DS = 6, GS =, = 5 C. DS = 6, GS =, = 5 C DS = 6, GS =, = 5 C. DS = 6, GS =, = 5 C Gatesource leakage current I GSS n GS =, DS = GS =, DS = DrainSource onstate resistance R DS(on) Ω GS =, I D = 9. GS =, I D =.. Device on 4mm*4mm*.5mm epoxy CB FR4 with 6cm (one layer, 7 µm thick) copper area for drain connection. CB is vertical without blown air. age 9999
reliminary data Electrical Characteristics, at = 5 C, unless otherwise specified arameter Symbol alues Unit min. typ. max. Characteristics Transconductance g fs S DS * I D * R DS(on)max, I D = DS * I D * R DS(on)max, I D =. 4.4 Input capacitance C iss pf GS =, DS = 5, f = MHz GS =, DS = 5, f = MHz 75 4 4 Output capacitance C oss GS =, DS = 5, f = MHz GS =, DS = 5, f = MHz 9 5 5 Reverse transfer capacitance C rss GS =, DS = 5, f = MHz GS =, DS = 5, f = MHz 5 4 65 5 Turnon delay time t d(on) ns DD =, GS =, I D =, R G = Ω DD =, GS =, I D =, R G = 7 Ω 5 8 Rise time t r DD =, GS =, I D =, R G = Ω DD =, GS =, I D =, R G = 7 Ω 5 6 55 9 Turnoff delay time t d(off) DD =, GS =, I D =, R G = Ω DD =, GS =, I D =, R G = 7 Ω 5 45 4 Fall time t f DD =, GS =, I D =, R G = Ω DD =, GS =, I D =, R G = 7 Ω 95 45 4 age 9999
reliminary data Electrical Characteristics, at = 5 C, unless otherwise specified arameter Symbol alues Unit min. typ. max. Characteristics Gate to source charge Q gs nc DD = 48, I D = DD = 48, I D =.5 Gate to drain charge Q gd DD = 48, I D = DD = 48, I D = 5.5 4.5 8. 6.8 Gate charge total Q g DD = 48, I D =, GS = to DD = 48, I D =, GS = to..5 5.5 6 Gate plateau voltage (plateau) DD = 48, I D = DD = 48, I D = 5 4 Reverse Diode Inverse diode continuous forward current I S T = 5 C Inverse diode direct current,pulsed I SM T = 5 C 8 Inverse diode forward voltage SD GS =, I F = I S.9. GS =, I F = I S.9. Reverse recovery time t rr ns R =, I F =l S, di F /dt = /µs 55 85 R =, I F =l S, di F /dt = /µs 55 85 Reverse recovery charge Q rr µc R =, I F =l S, di F /dt = /µs 9 5 R =, I F =l S, di F /dt = /µs 65 age 4 9999
reliminary data ower Dissipation (Ch.) tot = f (T ) ower Dissipation (Ch.) tot = f (T ).. W W.8.8.6.6 tot.4 tot.4.....8.8.6.6.4.4.. 4 6 8 C 6 4 6 8 C 6 T T Drain current (Ch.) I D = f (T ) parameter: GS. Drain current (Ch.) I D = f (T ) parameter: GS..8.4.6..4.6....8.8.6.4.4. 4 6 8 C 6 4 6 8 C 6 T T age 5 9999
reliminary data Safe operating area (Ch.) I D = f ( DS ) parameter : D =, T = 5 C Safe operating area (Ch.) I D = f ( DS ) parameter : D =, T = 5 C t p = µs R DS(on) = DS / I D t p = 45.µs µs R DS(on) = DS / I D ms ms ms ms DC DC DS Transient thermal impedance (Ch.) Z thjc = f(t p ) parameter : D = t p /T K/W DS Transient thermal impedance (Ch.) Z thjc = f(t p ) parameter : D = t p /T K/W ZthJC ZthJC D =.5 D =.5.. single pulse. 5 single pulse. 5 5 4 s 4 t p 5 4 s 4 t p age 6 9999
reliminary data Typ. output characteristics (Ch.) I D = f ( DS ) parameter: t p = 8 µs 7.5 tot =.W 6. 5.5 5. 4.5 4..5..5..5..5 i h GS [].5..5..5..5 4. 5. DS g e c a f d b a 4. b 4. c 4.5 d 4.7 e 5. f 5. g 5.5 h 5.7 i 6. Typ. drainsourceonresistance (Ch.) R DS(on) = f (I D ) Typ. output characteristics (Ch.) I D = f ( DS ) parameter: t p = 8 µs 5. tot =.W GS [] f e a 4. 4. d b 4. c 4.5.5 d 4.7 c e 5.. f 6..5 b. a.5..5.5..5..5..5 4. 5. DS Typ. drainsourceonresistance (Ch.) R DS(on) = f (I D ) parameter: GS.8 Ω b c d e f g parameter: GS. Ω a b c d..8 RDS(on).8.4 RDS(on).7.6..5.6. 8 h i.4.. e f 4 GS [] = b 4. c 4.5 d 4.7 e 5. f 5. g 5.5 h 5.7 i 6.. GS [] = a 4. b 4. c 4.5 d 4.7 e 5. f 6.... 4. 5. 6.5 I D.5..5..5..5 4. C 5. age 7 9999
reliminary data Typ. transfer characteristics (Ch.) parameter: t p = 8 µs I D = f ( GS ), DS x I D x R DS(on)max Typ. transfer characteristics (Ch.) parameter: t p = 8 µs I D = f ( GS ), DS x I D x R DS(on)max 5. 8 7 4..5 6. 5.5 4..5..5 4 5 GS 7... 4. GS 6. Typ. forward transconductance (Ch.) g fs = f(i D ); = 5 C parameter: g fs 7. S 6. 5.5 5. Typ. forward transconductance (Ch.) g fs = f(i D ); = 5 C parameter: g fs 4. S. gfs 4.5 4. gfs.5.5...5.5..5...5.5 4 5 6 7 8... 4. 6. I D I D age 8 9999
reliminary data Drainsource onresistance (Ch.) R DS(on) = f ( ) parameter : I D =, GS =.4 Ω.8 Drainsource onresistance (Ch.) R DS(on) = f ( ) parameter : I D =, GS =.8 Ω RDS(on).4. RDS(on).6.5.6 98%.4 98%. typ. typ 8. 4. 6 6 C 8 Gate threshold voltage (Ch.) GS(th) = f ( ) parameter: GS = DS, I D = µ 6 6 C 8 Gate threshold voltage (Ch.) GS(th) = f ( ) parameter: GS = DS, I D = 45 µ 5. 5. 4. 98% 4. 98% GS(th).5. typ GS(th).5. typ.5. %.5. %.5.5...5.5 6 6 C 6 6 6 C 6 age 9 9999
reliminary data Typ. capacitances (Ch.) Typ. capacitances (Ch.) C = f( DS ) C = f( DS ) parameter: GS =, f= MHz parameter: GS =, f= MHz pf C iss pf C iss C C C oss C oss C rss C rss 5 5 5 DS 5 Forward characteristics of reverse diode I F = f ( SD ), (Ch.) parameter:, tp = 8 µs 5 5 5 DS 5 Forward characteristics of reverse diode I F = f ( SD ), (Ch.) parameter:, t p = 8 µs IF IF = 5 C typ = 5 C typ = 5 C typ = 5 C typ = 5 C (98%) = 5 C (98%) = 5 C (98%) = 5 C (98%).4.8..6..4. SD.4.8..6..4. SD age 9999
reliminary data valanche Energy E S = f ( ) (Ch.) parameter: I D =, DD = 5 R GS = 5 Ω 5 mj valanche Energy E S = f ( ) parameter: I D =, DD = 5 R GS = 5 Ω 8 mj 4 5 6 ES ES 5 5 4 5 5 5 45 65 85 5 5 C 65 5 45 65 85 5 5 C 65 Typ. gate charge (Ch.) GS = f (Q Gate ) parameter: I D = 6 Typ. gate charge (Ch.) GS = f (Q Gate ) parameter: I D = 6 GS GS 8 8 6, DS max,8 DS max 6, DS max,8 DS max 4 4 4 6 8 nc Q Gate 4 6 8 4 6 nc 9 Q Gate age 9999
reliminary data Drainsource breakdown voltage (BR)DSS = f ( ), (Ch.) Drainsource breakdown voltage (BR)DSS = f ( ), (Ch.) 7 7 (BR)DSS 68 66 (BR)DSS 68 66 64 64 6 6 6 6 58 58 56 56 54 6 6 C 8 54 6 6 C 8 age 9999
reliminary data ublished by Infineon Technologies G, Bereichs Kommunikation St.MartinStrasse 5, D854 München Infineon Technologies G 999 ll Rights Reserved. ttention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of noninfringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in lifesupport devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that lifesupport device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. age 9999