DMCDUDA COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Product Summary Device BV DSS R DS(ON) max I D max T A = + C.99Ω @ V GS =.V ma Q V.Ω @ V GS =.V ma.8ω @ V GS =.8V 8mA.Ω @ V GS =.V 9mA Features and Benefits Low On-Resistance Very low Gate Threshold Voltage,.V max Low Input Capacitance Fast Switching Speed Ultra-Small Surface Mount Package.8mm x.6mm Totally Lead-Free & Fully RoHS compliant (Note & ) Halogen and Antimony Free. Green Device (Note ).9Ω @ V GS = -.V -8mA Q -V.Ω @ V GS = -.V -9mA.Ω @ V GS = -.8V -ma Ω @ V GS = -.V -ma Description and Applications Mechanical Data This MOSFET has been designed to minimize the on-state resistance (R DS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. General Purpose Interfacing Switch Power Management Functions Analog Switch Case: X-DFN86-6 Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 9V- Moisture Sensitivity: Level per J-STD- Terminals: Finish Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-, Method 8 Weight:.7 grams (Approximate) Pin D D D G S G G ESD PROTECTED Gate Protection Diode S Gate Protection Diode S S G D Top View Bottom View Device Symbol Pin Configuration Top View Ordering Information (Note ) Part Number Case Packaging DMCDUDA-7B X-DFN86-6,/Tape & Reel Notes:. No purposely added lead. Fully EU Directive /9/EC (RoHS) & /6/EU (RoHS ) compliant.. See http:///quality/lead_free.html for more information about Diodes Incorporated s definitions of Halogen- and Antimony-free, "Green" and Lead-free.. Halogen- and Antimony-free "Green" products are defined as those which contain <9ppm bromine, <9ppm chlorine (<ppm total Br + Cl) and <ppm antimony compounds.. For packaging details, go to our website at https:///design/support/packaging/diodes-packaging/. Marking Information B B = Product Type Marking Code Top View DMCDUDA Document number: DS9 Rev. - of May 7
DMCDUDA Maximum Ratings Q N-CHANNEL (@T A = + C, unless otherwise specified.) Characteristic Symbol Value Unit Drain-Source Voltage V DSS V Gate-Source Voltage V GSS ±8 V Continuous Drain Current (Note ) Steady T A = + C I State D T A = +7 C 6 ma Pulsed Drain Current (Note 6) I DM ma Maximum Ratings Q P-CHANNEL (@T A = + C, unless otherwise specified.) Characteristic Symbol Value Unit Drain-Source Voltage V DSS - V Gate-Source Voltage V GSS ±8 V Continuous Drain Current (Note ) V GS = -.V Steady T A = + C -8 I State D T A = +7 C -6 ma Pulsed Drain Current (Note 6) I DM - ma Thermal Characteristics (@T A = + C, unless otherwise specified.) Characteristic Symbol Value Unit Total Power Dissipation (Note ) P D mw Thermal Resistance, Junction to Ambient (Note ) Steady State R θja 9 C/W Operating and Storage Temperature Range T J, T STG - to + C Notes:. Device mounted on FR- PCB, with minimum recommended pad layout. 6. Device mounted on minimum recommended pad layout test board, μs pulse duty cycle = %. Electrical Characteristics Q N-CHANNEL (@T A = + C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage BV DSS V V GS = V, I D = μa Zero Gate Voltage Drain Current @T C = + C I DSS μa V DS = 6V, V GS = V Gate-Source Leakage I GSS ± μa V GS = ±V, V DS = V ON CHARACTERISTICS (Note 7) Gate Threshold Voltage V GS(TH)..7. V V DS = V GS, I D = μa..99 V GS =.V, I D = ma Static Drain-Source On-Resistance R DS(ON).6. V GS =.V, I D = ma Ω.8.8 V GS =.8V, I D = ma.. V GS =.V, I D = ma Diode Forward Voltage V SD.6. V V GS = V, I S = ma DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance C iss pf V DS = V, V GS = V, Output Capacitance C oss.6 pf f =.MHz Reverse Transfer Capacitance C rss.6 pf Gate Resistance R G Ω V DS = V, V GS = V, f =.MHz Total Gate Charge Q g. nc V GS =.V, V DS = V, Gate-Source Charge Q gs.6 nc I D = ma Gate-Drain Charge Q gd. nc Turn-On Delay Time t D(ON). ns Turn-On Rise Time t R. ns V DD = V, V GS =.V, Turn-Off Delay Time t D(OFF) ns R G = Ω, I D = ma Turn-Off Fall Time t F ns DMCDUDA Document number: DS9 Rev. - of May 7
DMCDUDA Electrical Characteristics Q P-CHANNEL (@T A = + C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage BV DSS - V V GS = V, I D = -μa Zero Gate Voltage Drain Current @T C = + C I DSS - μa V DS = -6V, V GS = V Gate-Source Leakage I GSS ± μa V GS = ±V, V DS = V ON CHARACTERISTICS (Note 7) Gate Threshold Voltage V GS(TH) -. -.7 -. V V DS = V GS, I D = -μa..9 V GS = -.V, I D = -ma Static Drain-Source On-Resistance R DS(ON).6. V GS = -.V, I D = -ma Ω.9. V GS = -.8V, I D = -ma. V GS = -.V, I D = -ma Diode Forward Voltage V SD -.7 -. V V GS = V, I S = -ma DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance C iss 8. pf V DS = -V, V GS = V, Output Capacitance C oss.9 pf f =.MHz Reverse Transfer Capacitance C rss. pf Gate Resistance R G 98 Ω V DS = V, V GS = V, f =.MHz Total Gate Charge Q g. nc V GS = -.V, V DS = -V, Gate-Source Charge Q gs.7 nc I D = -ma Gate-Drain Charge Q gd.7 nc Turn-On Delay Time t D(ON). ns Turn-On Rise Time t R. ns Turn-Off Delay Time t D(OFF) ns Turn-Off Fall Time t F. ns Notes: 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to product testing. V DD = -V, V GS = -.V, R G = Ω, I D = -ma DMCDUDA Document number: DS9 Rev. - of May 7
R DS(ON), DRAIN-SOURCE ON-RESISTANCE ( ) R DS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) R DS(ON), DRAIN-SOURCE ON-RESISTANCE ( ) R DS(ON), DRAIN-SOURCE ON-RESISTANCE ( ) DMCDUDA Typical Characteristics - N-CHANNEL..8 V GS =.V V GS =.V V GS =.V V GS =.V.8 V DS =.V T J = - T J = T J = 8 T J = T J =.6 V GS =.V V GS =.V.6... V GS =.V.. V GS =.9V V GS =.V... Figure. Typical Output Characteristic... V GS, GATE-SOURCE VOLTAGE (V) Figure. Typical Transfer Characteristic.8 V GS =.V.6.. V GS =.V V GS =.8V.8 V GS =.V.6. V GS =.V I D = ma.......6.7.8.9 I D, DRAIN-SOURCE CURRENT (A) Figure. Typical On-Resistance vs. Drain Current and Gate Voltage 6 7 8 V GS, GATE-SOURCE VOLTAGE (V) Figure. Typical Transfer Characteristic. V GS =.V V GS =.V, I D = ma..8 T J = T J =. V GS =.V, I D = ma V GS =.8V, I D = ma V GS =.V, I D = ma.6 T J = 8 V GS =.V, I D = ma. T J = T J = -......6.8 Figure. Typical On-Resistance vs. Drain Current and Temperature DMCDUDA Document number: DS9 Rev. - of - - 7 Figure 6. On-Resistance Variation with Temperature May 7
V GS (V) I S, SOURCE CURRENT (A) C T, JUNCTION CAPACITANCE (pf) R DS(ON), DRAIN-SOURCE ON-RESISTANCE ( ) V GS(TH), GATE THRESHOLD VOLTAGE (V) DMCDUDA Typical Characteristics - N-CHANNEL (Cont.).8.6. V GS =.V, I D = ma V GS =.V, I D = ma.8 I D = ma. V GS =.8V, I D = ma V GS =.V, I D = ma.6 I D = μa.8.6. V GS =.V, I D = ma...9.8.7.6. - - 7 Figure 7. On-Resistance Variation with Temperature V GS = V. - - 7 Figure 8. Gate Threshold Variation vs. Junction Temperature C iss f = MHz. T A = 8 o C C oss... T A = o C T A = o C T A = o C T A = - o C C rss..6.9.. V SD, SOURCE-DRAIN VOLTAGE (V) Figure 9. Diode Forward Voltage vs. Current 6 8 6 8 Figure. Typical Junction Capacitance 8 7 R DS(ON) Limited P W = µs 6 V DS = V, I D = ma......6.7.8 Q g (nc) Figure. Gate Charge... P W = ms P W = ms P W = ms T J(Max) = T C = Single Pulse DUT on *MRP Board V GS =.V P W = s P W = s DC. Fiugre. SOA, Safe Operation Area DMCDUDA Document number: DS9 Rev. - of May 7
R DS(ON), DRAIN-SOURCE ON-RESISTANCE ( ) R DS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) R DS(ON), DRAIN-SOURCE ON-RESISTANCE ( ) R DS(ON), DRAIN-SOURCE ON-RESISTANCE ( ) DMCDUDA Typical Characteristics - P-CHANNEL..8.6 V GS = -.V V GS = -.V V GS = -.V V GS = -.V.8.6 V DS = -.V 8 -. V GS = -.V.. V GS = -.9V V GS = -.V V GS = -.V V GS = -.V..... Figure. Typical Output Characteristic..... V GS, GATE-SOURCE VOLTAGE (V) Figure. Typical Transfer Characteristic. V GS = -.V V GS = -.V.. V GS = -.8V V GS = -.V I D = -ma.. V GS = -.V...... I D, DRAIN-SOURCE CURRENT (A) Figure. Typical On-Resistance vs. Drain Current and Gate Voltage 6 7 8 V GS, GATE-SOURCE VOLTAGE (V) Figure 6. Typical Transfer Characteristic. V GS = -.V. V GS = -.V, I D = -ma V GS = -.V, I D = -ma V GS = -.8V, I D = -ma.. 8 V GS = -.V, I D = -ma V GS = -.V, I D = -ma. -.....6.8 Figure 7. Typical On-Resistance vs. Drain Current and Temperature - - 7 Figure 8. On-Resistance Variation with Temperature DMCDUDA Document number: DS9 Rev. - 6 of May 7
V GS (V) I S, SOURCE CURRENT (A) C T, JUNCTION CAPACITANCE (pf) R DS(ON), DRAIN-SOURCE ON-RESISTANCE ( ) V GS(TH), GATE THRESHOLD VOLTAGE (V) DMCDUDA Typical Characteristics - P-CHANNEL (Cont.).. V GS = -.V, I D = -ma V GS = -.8V, I D = -ma V GS = -.V, I D = -ma.8 I D = -ma..6 I D = -μa.. V GS = -.V, I D = -ma V GS = -.V, I D = -ma. - - 7 Figure 9. On-Resistance Variation with Temperature V.9 GS = V.8.7.6.. - - 7 Figure. Gate Threshold Variation vs. Junction Temperature C iss f = MHz. C oss. T A = o C T A = 8 o C. T A = o C T A = o C. T A = - o C C rss..6.9.. V SD, SOURCE-DRAIN VOLTAGE (V) Figure. Diode Forward Voltage vs. Current 6 8 6 8 Figure. Typical Junction Capacitance 8 7 6 R DS(ON) Limited P W = ms P W = µs V DS = -V, I D = -ma......6.7 Q g (nc) Figure. Gate Charge... P W = ms P W = ms P W = s T J(Max) = T C = Single Pulse DUT on *MRP Board V GS = -.V P W = s DC. Figure. SOA, Safe Operation Area DMCDUDA Document number: DS9 Rev. - 7 of May 7
r(t), TRANSIENT THERMAL RESISTANCE DMCDUDA. D=.7 D=. D=. D=. D=. D=.9. D=.. D=. D=. D=Single Pulse E-.... t, PULSE DURATION TIME (sec) Figure. Transient Thermal Resistance R θja (t) = r(t) * R θja R θja = 9 /W Duty Cycle, D = t / t DMCDUDA Document number: DS9 Rev. - 8 of May 7
DMCDUDA Package Outline Dimensions Please see http:///package-outlines.html for the latest version. X-DFN86-6 A z E La(x) e R. D A A Seating Plane z k L(x) X-DFN86-6 Dim Min Max Typ A --..6 A... A -- --. b.7.. b... D.7.8.8 E..6.6 e -- --. k -- --.9 L..8. La.7.. z -- --. z -- --. All Dimensions in mm b(x) b(x) Suggested Pad Layout Please see http:///package-outlines.html for the latest version. X-DFN86-6 Y G X G X Y Y Dimensions Value (in mm) G. G. X. X. X.8 Y.7 Y. Y.76 X DMCDUDA Document number: DS9 Rev. - 9 of May 7
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